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Chapter- 6 (contd)

MISFET

Lecture 26-29

Dr. Navneet Gupta

MISFET: Introduction

Gate electrode that is isolated from the channel by an


insulator
IGFET.
If insulator is SiO2(Oxide)
MOSFET.

EEE C381

Dr. Navneet Gupta

Fermi Level
Potential barrier

Dr. Navneet Gupta

MOSFET

MISFET is a gate-controlled potential barrier.


Dr. Navneet Gupta

VG
VG-VD

Dr. Navneet Gupta

Dr. Navneet Gupta

Dr. Navneet Gupta

N-channel MOSFET

MOS Capacitor

Dr. Navneet Gupta

Ideal MOS Capacitor

Dr. Navneet Gupta

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Band diagram of the ideal MOS structure:

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Negative Voltage (V<0) : Accumulation

V<0
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Positive Voltage (V>0) : Depletion

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Large Positive Voltage (V>>0) : Inversion

This inverted layer, is the


key to MOS transistor
operation.

n0 ni e EF E i ) / kT ; or
EF Ei kT ln

no
qF
ni
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Inversion Region:

Lecture-27

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Strong Inversion:

Criterion: The surface should be as strongly n-type as the


substrate is p-type
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Different regions of surface potential:

s < 0: Accumulation of holes


(bands bend upward)

s = 0: Flat-band condition
F > s > 0: Depletion of holes
(bands bend downwards)

s = F : intrinsic
2F >S > F: weak Inversion
S =2F: STRONG INVERSION

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Surface Charge:
Electron and hole concentrations at any position x within the
semiconductor is given by:

n( x) n0e

q ( x ) / kT

p( x) p0e q ( x) / kT

Charge density (x) at any position x = difference between the


net positive charge and the net negative charges.

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2kT
Es
e
qLD

q
s
kT

qs n0

1 e
kT p0

q s
kT

qs

1
kT

1/ 2

s kT
whereLD 2
q p0
Debye length : distance over which significant charge
separation can occur.

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s = 0 (Flat band condition); Qs = 0

Because fixed dopant charges are cancelled by the mobile


carrier charges at flatband

s < 0 (Accumulation band condition); first term


is dominant and Qs increases strongly
(exponentially).
s > 0 (depletion and weak inversion);

Qs increases as s

2kT
Es
e
qLD

q
s
kT

n0
qs
e

kT
p
0

qs
kT

qs

1
kT

1/ 2

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Charge distribution, Electric field and


Electrostatic potential
Assuming
depletion
approximation for 0<x<W.
Depletion layer charge

= -qNAW
Positive charge balances
negative charge

Qm = -Qs
= -(-qNAW +Qn)
Qm = qNAW -Qn)

Charge Density

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Width of inversion
layer<10 nm thus is
neglected in sketching
the E

Electric Field

Applied Voltage(V)

= across the
insulator(Vi)
+
across the depletion
region in sc (s )

Electrostatic potential
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The charge per unit area in the depletion region at


strong inversion is:
1/ 2

Qd qN AWm 2 s qN AF

The threshold voltage required for strong inversion


is: (ideal case)

(assuming Qs Qd)

The threshold voltage represents the minimum


voltage required to achieve strong inversion.

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Capacitance-Voltage Characteristics
(ideal MOS structure)

Lecture-28

Depends upon the condition:


accumulation; depletion or
inversion.
Total capacitance:

Cd Ci
C
Cd Ci
Ci

i
d

and Cd

Voltage independent

s
W

Voltage dependent

i(SiO2) = 3.9 0
s(Si) = 11.8 0
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The capacitance is calculated from

EEE GC381: EDIC

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C-V relation for an n-channel MOS capacitor

EEE GC381: EDIC

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Inversion

VG : more +ve
Depends on frequency: LF (1-100Hz) or HF (~1 MHz)
w.r.t generation-recombination rate of the minority
carriers in inversion layer.
VG: varied rapidly: Cd do not contribute; Cd
Cdmin.
Hence C will remain Cmin

VG: varied slowly; time


for generation of minority
carriers. Now Cd >>Ci.
C Ci

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In accumulation: shape of C-V plot will be same at LF & HF.


Depends on majority carriers: dielectric relaxation time
Resistivity

D
13
D ~ 10 s

Permittivity
Very small for majority
carriers

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Effects of Real surfaces

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Work function difference

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Effect of negative work function


To accommodate the work function difference as a result
band bends down near the sc surface
If ms is sufficiently negative, an inversion region can
exist with no external voltage applied.

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Interface Trap and Oxide Charges:


Mobile ionic charge
(Qm).
Oxide trapped charge
(Qot)
Fixed oxide charge (Qf)
Interface trapped
charge (Qit)

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Effective positive charge at


interface

Qi C / cm Qm Qot Q f Qit

to induce an equivalent ve
charge in the SC.

Hence band bends down at


the SC surface.
So a ve voltage must be
applied to the metal relative
to the semiconductor to
achieve the FB condition.

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VT VFB

Qd

2F
Ci

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Threshold Voltage:

In a Real MOS structure:

Qi Qd
VT ms 2F
Ci Ci
(-)

All terms except Qi/Ci


depends on the doping in
the substrate

(-)

(+) n channel
(-) p channel

(+) n channel
(-) p channel

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Example:

Lecture-29

Find the threshold voltage for a Si n-channel MOS


transistor with Na = 1017 cm-3. ms = -0.95 V, Qi= 1011
qC/cm2 and SiO2 thickness 80 nm.
Solution:

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Qd 2 s qN aF

1/ 2

2(11.8 8.85 10

14

1.6 10

19

10 0.407)
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1/ 2

16.5 10 8

Qi Qd
VT ms 2F
Ci Ci
1.6 16.5
0.95

0.814 3.32V
4.31 4.31

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C-V Characteristics of MOS Gate Oxides:

Ideal gate insulator

no leakage current
Real gate insulator

have leakage current


Leakage current varies with V or E across SiO2.
Electron can tunnel through the barrier quantum
mechanically if the barrier thickness is sufficiently small.
Fowler Nordheim
tunneling
Direct tunneling

I FN Eox

exp
Eox

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Need for high gate


capacitance;
High-k gate
dielectrics (e.g.
HfO2 )

Fowler Nordheim
tunneling

Direct tunneling

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Prolonged charge transport through gate oxides:

Catastrophic electrical breakdown of the oxides.


(known as Time-Dependent Dielectric Breakdown (TDDB).

Impact Ionization
Positive feedback effect

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MOS Field Effect Transistor

Output Characteristics:
Qs
VG VFB s
Ci
Qs Qn Qd
(Qn Qd )
VG VFB
s
Ci

Qd
Qn Ci VG (VFB
s )
Ci

VT at threshold

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When VD is applied

1
Qn Ci VG VFB 2F Vx
2q s N a (2F Vx )
Ci

If we neglect the variation of Qd(x) with bias Vx, then

Qn ( x) Ci VG VT Vx

Mobile charge in the channel at point x

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Qn ( x) Ci VG VT Vx

I D dx n ZCi

ID

VD

VG VT Vx dVx

n ZCi
L

1 2
V

V
V

G T D 2 VD

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n ZCi
ID
L

1 2

VG VT VD 2 VD

VD.( sat.) VG VT

I D ( sat.)
I D ( sat.)

n ZCi

1
2
VG VT VD ( sat.) VD ( sat.)

L
2

n ZCi
n ZCi
2
2

(VG VT )
VD ( sat.)
2L
2L

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Device Parameters (n-channel device)

Channel conductance: g
Transconductance:gm

I D
g
VD
gm

I D

VG

VG const .

Z nCi

VG VT
L

VD const .

Z n Ci

VD
L

VD.(sat.) VG VT

g m ( sat.)

Z nCi
VG VT

L
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Transfer characteristics:

ID versus VG for fixed VD.[Linear Region]

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Saturation region:

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