SUP/SUB75N06-08

Vishay Siliconix

N-Channel 60-V (D-S), 175_C MOSFET

PRODUCT SUMMARY
V(BR)DSS (V)

rDS(on) (W)

ID (A)

60

0.008

75a

TO-220AB

TO-263

G
DRAIN connected to TAB
G

D S

Top View

G D S

SUB75N06-08

Top View

N-Channel MOSFET

SUP75N06-08

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

VGS

"20

Gate-Source Voltage

75a

TC = 25_C

Continuous Drain Current

(TJ = 175_C)

ID

TC = 125_C

Pulsed Drain Current

Avalanche Current
Repetitive Avalanche

Energyb

L = 0.1 mH

IDM

240

IAR

60

EAR
PD

TA = 25_C (TO-263)d

Operating Junction and Storage Temperature Range

280

mJ

250c

TC = 25_C (TO-220AB and TO-263)

Power Dissipation

55

3.7

TJ, Tstg

55 to 175

_C

Symbol

Limit

Unit

THERMAL RESISTANCE RATINGS

Parameter
PCB Mount
Junction-to-Ambient
Junction-to-Case

(TO-263)d

Free Air (TO-220AB)

40
RthJA
RthJC

62.5

_C/W
C/W

0.6

Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1 square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70283
S-05111Rev. F, 10-Dec-01

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SUP/SUB75N06-08
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter

Symbol

Test Condition

Min

Typ

Max

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

VGS(th)

VDS = VGS, ID = 250 mA

2.0

3.0

4.0

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 60 V, VGS = 0 V

Unit

Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Currenta

IDSS

ID(on)

VDS = 60 V, VGS = 0 V, TJ = 125_C

50

VDS = 60 V, VGS = 0 V, TJ = 175_C

150

VDS = 5 V, VGS = 10 V

120

VGS = 10 V, ID = 30 A
Drain-Source On-State Resistancea

Forward Transconductancea

rDS(on)

gfs

mA
m

A
0.007

0.008

VGS = 10 V, ID = 30 A, TJ = 125_C

0.012

VGS = 10 V, ID = 30 A, TJ = 175_C

0.016

VDS = 15 V, ID = 30 A

nA

30

Dynamicb
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

270

Total Gate Chargec

Qg

85

Gate-Source Chargec

Qgs

28

Gate-Drain Chargec

Qgd

26

Turn-On Delay Timec

td(on)

20

40

tr

95

200

65

120

20

60

Rise Timec
Turn-Off Delay Timec
Fall Timec

td(off)

4800
VGS = 0 V, VDS = 25 V, f = 1 MHz

VDS = 30 V, VGS = 10 V, ID = 75 A

VDD = 30 V, RL = 0.47 W
ID ^ 75 A, VGEN = 10 V, RG = 2.5 W

tf

910

pF

120
nC

ns

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b

Continuous Current

IS

75

Pulsed Current

ISM

240

Forward Voltagea

VSD

Reverse Recovery Time

Peak Reverse Recovery Current
Reverse Recovery Charge

A
IF = 75 A , VGS = 0 V

trr
IRM(REC)
Qrr

IF = 75 A, di/dt = 100 A/ms

m

1.0

1.3

67

120

ns

0.2

0.48

mC

Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

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Document Number: 70283

S-05111Rev. F, 10-Dec-01

SUP/SUB75N06-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics

Transfer Characteristics

250

200

VGS = 10, 9, 8 V

7V

200
150
I D Drain Current (A)

I D Drain Current (A)

6V
150

100
5V
50

100

TC = 125_C

50

25_C
4V

55_C

0
0

10

VDS Drain-to-Source Voltage (V)

Transconductance

On-Resistance vs. Drain Current

0.010

TC = 55_C

100

25_C

80

0.008
r DS(on) On-Resistance ( )

g fs Transconductance (S)

VGS Gate-to-Source Voltage (V)

120

125_C

60

40

20

VGS = 10 V

0.006

VGS = 20 V

0.004

0.002

0.000
0

20

40

60

80

100

20

40

VGS Gate-to-Source Voltage (V)

60

80

100

120

ID Drain Current (A)

Capacitance

Gate Charge
20

7000

V GS Gate-to-Source Voltage (V)

6000
C Capacitance (pF)

Ciss

5000
4000
3000
2000
Coss

Crss

1000
0

VDS = 30 V
ID = 75 A

16

12

0
0

10

20

30

40

50

VDS Drain-to-Source Voltage (V)

Document Number: 70283

S-05111Rev. F, 10-Dec-01

60

25

50

75

100

125

150

175

Qg Total Gate Charge (nC)

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SUP/SUB75N06-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

2.5

100

2.0
I S Source Current (A)

r DS(on) On-Resistance ( )
(Normalized)

VGS = 10 V
ID = 30 A

1.5

1.0

TJ = 150_C
TJ = 25_C
10

0.5

0.0
50

1
25

25

50

75

100

125

150

175

0.3

TJ Junction Temperature (_C)

0.6

0.9

1.2

1.5

VSD Source-to-Drain Voltage (V)

THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature

Safe Operating Area

500

100

I D Drain Current (A)

I D Drain Current (A)

100
60

40

10 ms

Limited
by rDS(on)

80

100 as

1 ms
10
TC = 25_C
Single Pulse

20

10 ms
100 ms
dc

1
0

25

50

75

100

125

150

175

0.1

TC Case Temperature (_C)

1
10
VDS Drain-to-Source Voltage (V)

100

Normalized Thermal Transient Impedance, Junction-to-Case

2

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2

0.1
0.1

0.05
0.02

Single Pulse
0.01
105

104

103

102

101

Square Wave Pulse Duration (sec)

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Document Number: 70283

S-05111Rev. F, 10-Dec-01

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Vishay

Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000

Revision: 18-Jul-08

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