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ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
3 Description
2 Applications
PACKAGE
PDIP (16)
17.90 mm 7.50 mm
SOIC (28)
20.01 mm 6.61 mm
4 Simplified Schematic
VIN
VOUT
VS2
Gnd
+VS2
VS1
Gnd
+VS1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Simplified Schematic.............................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
1
2
3
4
7.1
7.2
7.3
7.4
7.5
7.6
4
4
4
4
5
6
11 Layout................................................................... 18
11.1 Layout Guidelines ................................................. 18
11.2 Layout Example .................................................... 18
5 Revision History
Changes from Original (November1993) to Revision A
Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ............................... 1
ISO122
www.ti.com
28 Pins SOIC
DVA Package
Top View
+VS1
16
Gnd 1
+VS1
28
Gnd 1
VS1
15
VIN
VS1
27
VIN
VOUT
10
VS2
VOUT
13
16
VS2
Gnd 2
+VS2
Gnd 2
14
15
+VS2
Pin Functions
PIN
NAME
I/O
DESCRIPTION
PDIP
SOIC
GND
14
GND
16
28
VIN
15
27
VOUT
13
+VS1
-VS1
+VS2
15
-VS2
10
16
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
Supply voltage
MAX
UNIT
18
VIN
100
1500
Vrms
Junction temperature
150
Continuous
40
125
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Electrostatic discharge
1000
500
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
NOM
MAX
25
85
+VS1
15
-VS1
15
+VS2
15
-VS2
15
VIN
10
UNIT
C
(1)
NVF (PDIP)
DVA (SOIC)
16 PINS
28 PINS
RJA
51.0
79.8
RJC(top)
32.4
32.9
RJB
29.5
42.2
JT
10.4
6.6
JB
29.0
40.9
(1)
UNIT
C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
ISO122
www.ti.com
TEST
CONDITIONS
ISO122P/U
MIN
TYP
ISO122JP/JU
MAX
MIN
TYP
MAX
UNIT
ISOLATION
Voltage rated continuous ac 60Hz
100% Test (1)
1s, 5pc PD
60Hz
1500
1500
Vac
2400
2400
Vac
Barrier Impedance
Leakage Current at 60Hz
VISO = 240Vrms
140
140
1014 || 2
1014 || 2
0.18
dB
|| pF
0.5
0.18
0.5
Arms
0.50
0.05
0.50
%FSR
0.016 0.020
0.025
0.050
20
50
GAIN
Nominal Gain
VO = 10V
Gain Error
0.05
Gain vs Temperature
10
Nonlinearity (2)
V/V
10
ppm/C
%FSR
20
vs Temperature
vs Supply
50
200
200
Noise
mV
V/C
mV/V
V/Hz
INPUT
Voltage Range
10
Resistance
12.5
10
200
12.5
200
OUTPUT
Voltage Range
Current Drive
10
12.5
10
12.5
15
15
mA
0.1
0.1
20
20
mVp-p
50
50
kHz
(3)
FREQUENCY RESPONSE
Small-Signal Bandwidth
Slew Rate
Settling Time 0.10%
Settling Time 0.01%
VO = 10V
V/s
50
50
350
350
150
150
POWER SUPPLIES
Rated Voltage
Voltage Range
VS1
VS2
15
4.5
Quiescent Current
15
18
4.5
V
18
5.5
5.5
V
mA
TEMPERATURE RANGE
JA
JC
(1)
(2)
(3)
Specification
25
85
25
85
Operating
25
85
25
85
Storage
40
125
40
125
Thermal Resistance
100
100
C/W
65
65
C/W
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
+10
Output Voltage (V)
+10
10
500
10
1000
50
Time (s)
f = 2kHz
f = 20kHz
+10
Output Voltage (V)
+10
100
Time (s)
10
500
10
50
1000
100
Time (s)
Time (s)
Max DC Rating
140
1k
120
IMR (dB)
2.1k
Degraded
Performance
100
100
80
Typical
Performance
60
40
100
1k
10k
100k
1M
10M
100M
Frequency (Hz)
100
1k
10k
100k
1M
Frequency (Hz)
10
ISO122
www.ti.com
100mA
PSRR (dB)
10mA
40
+VS1 , +VS2
VS1 , VS2
20
1mA
1500Vrms
100mA
10mA
240Vrms
1mA
0.1mA
0
1
10
100
1k
10k
100k
1M
10
100
10k
100k
1M
VOUT/VIN
100kHz
Freq
Out
250
10
200
20
150
30
100
40
50
500kHz
1MHz
Frequency Out
1k
Frequency (Hz)
Frequency (Hz)
1.5MHz
Input Frequency
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
8 Detailed Description
8.1 Overview
The ISO122 isolation amplifier uses an input and an output section galvanically isolated by matched 1-pF
isolating capacitors built into the plastic package. The input is duty-cycle modulated and transmitted digitally
across the barrier. The output section receives the modulated signal, converts it back to an analog voltage and
removes the ripple component inherent in the demodulation. Input and output sections are fabricated, then laser
trimmed for exceptional circuitry matching common to the input and output sections. The sections are then
mounted on opposite ends of the package with the isolating capacitors mounted between the two sections. The
ISO122 contains 250 transistors.
8.1.1 Modulator
An input amplifier (A1, Functional Block Diagram) integrates the difference between the input current (VIN/200
k) and a switched 100-mA current source. This current source is implemented by a switchable 200-mA source
and a fixed 100-A current sink. To understand the basic operation of the modulator, assume that VIN = 0 V. The
integrator will ramp in one direction until the comparator threshold is exceeded. The comparator and sense amp
will force the current source to switch; the resultant signal is a triangular waveform with a 50% duty cycle. The
internal oscillator forces the current source to switch at 500 kHz. The resultant capacitor drive is a
complementary duty-cycle modulation square wave.
8.1.2 Demodulator
The sense amplifier detects the signal transitions across the capacitive barrier and drives a switched current
source into integrator A2. The output stage balances the duty-cycle modulated current against the feedback
current through the 200 kW feedback resistor, resulting in an average value at the VOUT pin equal to VIN. The
sample and hold amplifiers in the output feedback loop serve to remove undesired ripple voltages inherent in the
demodulation process.
200A
200A
Sense
150pF
200kW
VIN
1pF
1pF
1pF
1pF
Sense
150pF
100A
200kW
100A
VOUT
||
+
A1
A2
S/H
G=1
Osc
+VS2
S/H
G=6
Gnd 2 VS2
ISO122
www.ti.com
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
+VS2
1
VIN
15
In
9
7
ISO
122
8
16
Gnd
R1
R2
4.75kW
9.76kW
A1
OPA602
10
C1
220pF
VS2
Gnd2
VOUT = VIN
Gnd1
VS1
10
ISO122
www.ti.com
Gain (dB)
9
2
15
21
27
2k
5k
10k
20k
50k
Frequency (Hz)
100k
200k
11
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
ISO122P
10kW
e1 = 12V
+V
9
10kW
15
V = e1
2
7
8
10
e2 = 12V
2
V
Multiplexer
16
Control
Section
Charge/Discharge
Control
ISO122P
e49=12V
15
+V
9
7
e50=12V
25kW
+V
25kW
5
10kW
10
2
10kW
25kW
3
25kW
16
INA105
6
V = e50
2
12
ISO122
www.ti.com
A0
A1
ISO150
+15V 15V
+15V 15V
1
2
1
VIN
6
2
7 PGA
8 102
45
3
9
10
15 15
VOUT
8
ISO122P
16
Figure 18. Programmable-Gain Isolation Channel With Gains of 1, 10, and 100
13
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
2
10.0V
REF
102
Thermocouple
R4
+15V 15V
R1
27kW
Isothermal
Block with
1N4148 (1)
1MW
+15V 15V
+15V
1
12
RG
R2
4 +In
5
INA101
10
11 In
R5
50W
R6
10
15
14
VOUT
13
16
3
R3
100W
ISO122P
15V
100
Zero Adj
ISA
TYPE
E
MATERIAL
SEEBACK
COEFFICIENT
(V/C)
R2
(R3 = 100W)
R4
(R5 + R6 = 100W)
58.5
3.48kW
56.2kW
50.2
4.12kW
64.9kW
39.4
5.23kW
80.6kW
38.0
5.49kW
84.5kW
Chromel
Constantan
Iron
Constantan
Chromel
Alumel
Copper
Constantan
14
ISO122
www.ti.com
1mA
1mA
10
8
5
RS
XTR101
4-20mA
0.01F
11
3
+VS =15V
on PWS740
6
4
R1 = 100W
16
14
2 RCV420
5, 13
10
4
RTD
(PT100)
ISO122P
15
+V
15
9
7
8
11
R2 = 2.5kW
10
12
VOUT
0V-5V
2
16
2mA
Gnd
VS = 15V
on PWS740
VS
(V)
INPUT RANGE
(V)(1)
20+
15
12
2 to +10
2 to +5
2 to +2
7
INA105
Difference Amp
2
5
R1
10kW
Signal Source
VIN
+
RS
R4
R3
+VS2 (+15V)
R2
15 In
RC
GND
16
ISO
ISO
122P
122
122P
(1)
Reference
IN4689
5.1V
7
8
VOUT = VIN
10
2
VS1
Com 2
VS2 (15V)
15
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
HPR117
15V, 20mA
VIN
Input
GND
+15V, 20mA
15
10
GND VIN
16
V+
INPUT
SECTION
V+
Auxiliary
Isolated
Power
Output
OUTPUT
SECTION
ISO122P
GND
8
+15V
Output
GND
15V
VO
GND
HPR117
HPR117
6
VIN
15V, 20mA
Input
GND
+15V, 20mA
15
10
GND VIN
16
V+
INPUT
SECTION
Auxiliary
Isolated
Power
Output
V+
ISO122P
Auxiliary
Isolated
Power
Output
OUTPUT
SECTION
V
GND
8
+15V, 20mA
Output
GND
15V, 20mA
VO
ISO122
www.ti.com
VIN
VOUT
VS2
Gnd
Gnd
+VS2
+VS1
VS1
VS1
1F
1F
VS2
1F
1F
17
ISO122
SBOS160A NOVEMBER 1993 REVISED JANUARY 2015
www.ti.com
11 Layout
11.1 Layout Guidelines
To maintain the isolation barrier of the device, the distance between the high-side ground (pin 16 or 28) and the
low-side ground (pin 8 or 14) should be kept at maximum; that is, the entire area underneath the device should
be kept free of any conducting materials.
1 F
+VS1
GND
VIN
-VS1
SMD
0603
ISOLATION
BOUNDARY
ISOLATION
BOUNDARY
ISO122
1 F
VOUT
-VS2
GND
+VS2
SMD
0603
LEGEND
TOP layer:
copper pour & traces
1 F
GND
SMD
0603
18
ISO122
www.ti.com
12.3 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
19
www.ti.com
10-Sep-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
ISO122JP
ACTIVE
PDIP
NVF
25
Pb-Free
(RoHS)
CU NIPDAU
-25 to 85
ISO122JP
ISO122JPE4
ACTIVE
PDIP
NVF
25
Pb-Free
(RoHS)
CU NIPDAU
-25 to 85
ISO122JP
ISO122JU
ACTIVE
SOIC
DVA
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122JU
ISO122JU/1K
ACTIVE
SOIC
DVA
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122JU
ISO122JUE4
ACTIVE
SOIC
DVA
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122JU
ISO122P
ACTIVE
PDIP
NVF
25
Pb-Free
(RoHS)
CU NIPDAU
-25 to 85
ISO122P
ISO122PE4
ACTIVE
PDIP
NVF
25
Pb-Free
(RoHS)
CU NIPDAU
-25 to 85
ISO122P
ISO122U
ACTIVE
SOIC
DVA
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122U
ISO122U/1K
ACTIVE
SOIC
DVA
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122U
ISO122U/1KE4
ACTIVE
SOIC
DVA
1000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122U
ISO122UE4
ACTIVE
SOIC
DVA
20
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-3-260C-168 HR
-25 to 85
ISO
122U
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Addendum-Page 1
Samples
www.ti.com
10-Sep-2014
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
10-Sep-2014
Device
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
ISO122JU/1K
SOIC
DVA
1000
330.0
24.4
10.9
18.3
3.2
12.0
24.0
Q1
ISO122U/1K
SOIC
DVA
1000
330.0
24.4
10.9
18.3
3.2
12.0
24.0
Q1
Pack Materials-Page 1
10-Sep-2014
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
ISO122JU/1K
SOIC
DVA
1000
367.0
367.0
45.0
ISO122U/1K
SOIC
DVA
1000
367.0
367.0
45.0
Pack Materials-Page 2
MECHANICAL DATA
MPDI072 AUGUST 2001
NVF (R-PDIP-T8/16)
PLASTIC DUAL-IN-LINE
0.775 (21,34)
0.735 (18,67)
16
0.280 (7,11)
0.240 (6,10)
Index
Area
0.195 (4,95)
0.115 (2,92)
0.045 (1,14)
0.030 (0,76)
0.210 (5,33)
MAX
0.070 (1,78)
0.045 (1,14)
0.325 (8,26)
0.300 (7,62)
C
Seating Plane
Base Plane
E
0.005 (0,13)
MIN 4 PL
D
1/2 Lead
0.150 (3,81)
0.115 (2,92)
0.100 (2,54)
0.022 (0,56)
0.014 (0,36)
0.010 (0,25) M
0.015 (0,38)
MIN
C
0.300 (7,63)
0.014 (0,36)
0.008 (0,20)
0.060 (1,52)
0.000 (0,00) F
0.430 (10,92)
MAX
F
4202501/A 08/01
MECHANICAL DATA
MPDS105 AUGUST 2001
DVA (R-PDSO-G8/28)
PLASTIC SMALL-OUTLINE
C
18,10
17,70
0,25 M B M
28
15
B
7,60
7,40
10,65
10,01
D
Index
Area
1
14
2,65
2,35
0,75
0,25 x 45
Seating
Plane
1,27
0,51
0,33
0,30
0,10
0,10
0,32
0,23
0,25 M C A M B S
08
F
1,27
0,40
4202103/B 08/01
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C.
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TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
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