Optical Properties of Materials

HW 2 (due: 11/6)
1. Try to use Gradient of Cartesian and Spherical coordination to prove the following
transformation:

cos cos
sin
sin cos

x
r
r
r sin

cos sin
cos
sin sin

y
r
r
r sin

sin
cos
z
r
r

2. Prove: L2 L2x L2y L2z 2 [

1 2
(sin ) 2
]
sin

sin 2

3. Calculate the de Broglie wavelength of (a) a photon with energy of 140 eV, (b) an
electron accelerated to 14 eV, and (c) a 40-gram base ball with a speed of 500
km/hr.
4. Consider a proton in a one-dimensional infinite potential well. (a) Derive the
expression for the allowed energy states of the proton. (b) Calculate the energy
difference (in units of eV) between the lowest possible energy and the next higher
energy state for well width (i) 4 , and (ii) 0.5 cm.
5. Consider the penetration of a step potential function of height 2.55 eV by an
electron whose energy is 2.1 eV. Determine the relative probability of finding the
electron at the distance (a) 10 beyond the barrier, and (b) 60 beyond the
barrier, compared to the probability of finding the incident particle at the barrier
edge.
6. A potential function is shown in the following figure with incident particles
coming from with a total energy E V2 . The constant k are defined as:
2m( E V1 )
2m( E V2 )
2mE
, k2
, k3

Assume a special case for which k2a 2n , n 1, 2, 3, . Derive the

k1

expression, in terms of the constants, k1, k2, and k3, for the transmission
coefficient. The transmission coefficient is defined as the ratio of the flux of

particles in region III to the incident flux in region I.

Incident particles E V2

V2
V1

II
x=0

III
x=a

7. Determine the number of atoms per unit cell and the packing factors in a (a) FCC,
(b) BCC, and (c) diamond structure, assumed that identical solid spheres are
placed in space so that their centers lie on the atomic points of a crystal and the
spheres on the neighboring sites touch each other.
8. If 11015 Ga atoms per cm3 are added to silicon as a substitutional impurity and
are distributed uniformly throughout the semiconductor, determine the distance
between Ga atoms in terms of silicon lattice constant, assumed that the Ga atoms
are distributed in a rectangular or cubic array and the lattice constant of silicon is
5.43 .
9. Sketch the following crystal planes for a simple cubic lattice: (a) (111), (b) (432),
and (230).
10. The lattice constant of a simple cubic cell is 4.50 . Calculate the distance
between the nearest parallel (a) (100), (b) (110), and (c) (111) planes.
11. Consider the hcp lattice shown below. The Bravais lattice underlying the hcp
structure is given by two vectors of length a in one plane, with an angle of 60
degree between them and a third vector of length c perpendicular to that plane.
There are two atoms per unit cell. (a) Draw the unit cell. (b) Show that for the
ideal packing of spheres, the ratio c / a 8 / 3 . (c) Calculate the packing factor (d)
Construct the reciprocal lattice.

a
12. The fcc crystal with one atom per unit cell has the unit lattice vector as follows:
a1

a
a
a
(0,1,1), a 2 (1,0,1), a 3 (1,1,0) and 12 neighbor atoms.
2
2
2

Show that its reciprocal lattice is in the form of bcc crystal