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IRFR9120NPbF
IRFU9120NPbF
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VDSS = -100V
RDS(on) = 0.48
ID = -6.6A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
TO-252AA
I-Pak
TO-251AA
Parameter
Max.
-6.6
-4.2
-26
40
0.32
20
100
-6.6
4.0
-5.0
-55 to + 150
Units
A
W
W/C
V
mJ
A
mJ
V/ns
Thermal Resistance
Parameter
RJC
RJA
RJA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
3.1
50
110
C/W
1
12/14/04
IRFR/U9120NPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min.
-100
-2.0
1.4
Typ.
-0.11
14
47
28
31
LD
4.5
LS
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
350
110
70
V(BR)DSS
IDSS
IGSS
Max. Units
Conditions
V
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA
0.48
S
VDS = -50V, ID = -4.0A
-25
VDS = -100V, VGS = 0V
A
-250
VDS = -80V, VGS = 0V, TJ = 150C
100
VGS = 20V
nA
-100
VGS = -20V
27
ID = -4.0A
5.0
nC VDS = -80V
15
VGS = -10V, See Fig. 6 and 13
VDD = -50V
ID = -4.0A
ns
RG = 12
6mm (0.25in.)
nH
G
from package
VGS = 0V
pF
VDS = -25V
V SD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Notes:
Conditions
D
MOSFET symbol
-6.6
showing the
A
G
integral reverse
-26
p-n junction diode.
S
-1.6
V
TJ = 25C, IS = -3.9A, VGS = 0V
100 150
ns
TJ = 25C, IF = -4.0A
420 630
nC di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
IRFR/U9120NPbF
100
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
TOP
10
-4.5V
20s PULSE WIDTH
TJ = 25 C
0.1
0.1
10
100
10
-4.5V
0.1
0.1
2.5
100
TJ = 25 C
TJ = 150 C
V DS = -50V
20s PULSE WIDTH
4
10
100
0.1
10
10
ID = -6.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
V GS = -10V
0
20
40
60
TJ , Junction Temperature ( C)
IRFR/U9120NPbF
20
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
VGS =
Ciss =
Crss =
Coss =
600
Ciss
Coss
400
Crss
200
ID = -4.0 A
VDS =-80V
VDS =-50V
VDS =-20V
16
12
10
100
10
15
20
25
100
100
10
C, Capacitance (pF)
800
TJ = 150 C
TJ = 25 C
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
10
100us
1ms
1
10ms
TC = 25 C
TJ = 150 C
Single Pulse
0.1
2.6
10
100
1000
IRFR/U9120NPbF
8.0
VGS
RD
VDS
D.U.T.
RG
6.0
VDD
-10V
Pulse Width 1 s
Duty Factor 0.1 %
4.0
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( C)
90%
VDS
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
10
IRFR/U9120NPbF
L
VDS
- V
V DD
+ DD
D.U.T
RG
IAS
-20V
tp
DRIVER
0.01
15V
250
TOP
200
BOTTOM
ID
-1.7A
-2.5A
-3.9A
150
100
50
0
25
50
75
100
125
150
tp
V(BR)DSS
50K
QG
12V
-10V
.2F
.3F
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
IG
ID
IRFR/U9120NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
RG
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS
+
-
VDD
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple 5%
[ISD ]
IRFR/U9120NPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12
916A
34
ASSEMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12
ASSEMBLY
LOT CODE
34
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 16
A = ASSEMBLY SITE CODE
IRFR/U9120NPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
IRF U120
919A
56
78
AS SEMBLY
LOT CODE
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
56
ASS EMB LY
LOT CODE
78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS SEMB LY S IT E CODE
IRFR/U9120NPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/