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1. (Signature)
(Name)
Roll No.
2. (Signature)
(Name)
J8 8 0 5
Time : 2 hours]
(In words)
PAPERIII
ELECTRONIC SCIENCE
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J8805
P.T.O.
ELECTRONIC SCIENCE
PAPERIII
NOTE :
This paper is of two hundred (200) marks containing four (4) sections.
Candidates are required to attempt the questions contained in these sections
according to the detailed instructions given therein.
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SECTION - I
NOTE :
This section contains five (5) questions based on the following paragraph.
Each question should be answered in about thirty (30) words and each
carries five (5) marks.
(535525 Marks)
The most important type of Klystron is the reflex Klystron. It is used as a low
power oscillator. This type of Klystron has only one cavity which acts as both buncher
and catcher. Velocity modulation of the electron beam is caused by the input radio
frequency wave in the cavity, and the modulated beam leaving the cavity is reflected
back by a reflector electrode. Bunching occurs because the faster electrons travel further
towards the reflector before reversing their direction of travel than do the slower ones.
The bunches of electrons returning to the cavity that experience the maximum positive
field give up the most energy since the direction of motion is now reversed.
1.
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2.
3.
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4.
5.
Calculate the round trip transit time of an electron beam in reflex Klystron.
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SECTION - II
NOTE :
6.
Explain how zenner diode is used to regulate the voltage across a load.
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7.
What is early effect ? What are the effects produced by base width modulation ?
8.
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9.
Draw the circuit diagram of inverted ladder D/A converter and explain its operation.
10.
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12.
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13.
Define the characteristic impedance of a transmission line. When is the input impedance
of a transmission line equal to its characteristic impedance ?
14.
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15.
16.
Explain the quantization of analog signal in Pulse Code Modulation (PCM) system.
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17.
18.
What are the advantages of Switching Mode Power Supply over ordinary Power
Supply ?
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19.
20.
Define Hall effect. Explain how this phenomena can be used to determine whether
a semiconductor is n type or p type.
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P.T.O.
SECTION - III
NOTE :
This section contains five (5) questions. Each question carries twelve
(12) marks and is to be answered in about two hundred (200) words.
(1235560 Marks)
21.
List the basic processes involved in the fabrication of an IC, assuming you already have
a substrate. How are the components interconnected in an IC ?
22.
(a)
(b)
23.
(i)
(ii)
24.
Draw a neat block diagram of superheterodyne receiver and explain its working. Explain
the working of frequency mixer in detail.
25.
What are the different applications of control systems ? Briefly explain each type and
give atleast one example for each.
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Derive the expression for the radiation resistance of an half - wave dipole.
An electric field strength of 10mn /meter is to be measured at an observation
point u = l/2, 500km from a half-wave dipole antenna operating at 50 MHz.
(a) What is the length of the dipole ?
(b) Calculate the current that must be fed to the antenna.
(c) Find the average power radiated by the antenna.
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SECTION - IV
NOTE :
26.
This section consists of one essay type question of forty (40) marks to be
answered in about one thousand (1000) words on any of the following
topics.
(4031540 Marks)
What are the advantages of fiber optic communication system ? Explain the
characteristics of different types of optical fibres.
OR
Classify transducers. List the selection factors of transducers. Suggest and explain the
methods to measure temperature and pressure transducers.
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51
76
27
52
77
28
53
78
29
54
79
30
55
80
31
56
81
32
57
82
33
58
83
34
59
84
10
35
60
85
11
36
61
86
12
37
62
87
13
38
63
88
14
39
64
89
15
40
65
90
16
41
66
91
17
42
67
92
18
43
68
93
19
44
69
94
20
45
70
95
21
46
71
96
22
47
72
97
23
48
73
98
24
49
74
99
25
50
75
100
Marks
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Marks Obtained
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