Electonic Devices - S. Sharma

Scilab Textbook Companion for
Electonic Devices
by S. Sharma1
Created by
Mohd Zakir
B.Tech
Electronics Engineering
H. N. B.Garhwal University
College Teacher
Mr. Ankit Jorawer
Cross-Checked by
Prof. Prathan Mehta
June 13, 2014
1 Funded
by a grant from the National Mission on Education through ICT,

http://spoken-tutorial.org/NMEICT-Intro. This Textbook Companion and Scilab
codes written in it can be downloaded from the Textbook Companion Project
section at the website http://scilab.in
Book Description
Title: Electonic Devices
Author: S. Sharma
Publisher: S. K. Kataria & Sons, New Delhi
Edition: 1
Year: 2013
ISBN: 978-93-5014-459-6
Scilab numbering policy used in this document and the relation to the
above book.
Exa Example (Solved example)
Eqn Equation (Particular equation of the above book)
AP Appendix to Example(Scilab Code that is an Appednix to a particular
Example of the above book)
For example, Exa 3.51 means solved example 3.51 of this book. Sec 2.3 means
a scilab code whose theory is explained in Section 2.3 of the book.
Contents
List of Scilab Codes
2 Energy Bands And Charge Carriers in Semiconductor
3 Excess Carriers In Semiconductors
26
4 Junctions
41
5 MOSFETs
59
6 Bipolar Junction Transistor
91
7 Optoelectonic Devices
113
List of Scilab Codes

Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.10
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.20
2.21
2.22
2.23
2.24
2.25
2.26
2.27
2.28
Energy gap . . . . . . . . . . . . . . . .
Wavelength . . . . . . . . . . . . . . . .
Position of Fermi level . . . . . . . . . .
Probability . . . . . . . . . . . . . . . .
Thermal equilibrium hole concentration
Mobility of electrons in copper . . . . .
Density of free electrons . . . . . . . . .
Drift velocity . . . . . . . . . . . . . . .
Mobility of charge carriers . . . . . . . .
Conductivity of pure Si . . . . . . . . .
Number of donor atoms . . . . . . . . .
Conductivity of speciman . . . . . . . .
Mobility of electrons in Ge . . . . . . .
Density and mobility of holes . . . . . .
Current produced . . . . . . . . . . . .
Resistivity of doped Ge . . . . . . . . .
Current produced in Ge sample . . . . .
Conductivity of pure Si . . . . . . . . .
Hall voltage produced . . . . . . . . . .
Hall coefficient and mobility of electrons
Concentration of holes in Si crystals . .
Hall angle . . . . . . . . . . . . . . . . .
Current density in speciman . . . . . . .
Relaxation time . . . . . . . . . . . . .
Temperature . . . . . . . . . . . . . . .
Thermal equilibrium hole concentration
Required doping concentration . . . . .
Quasi Fermi energy levels . . . . . . . .
4
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8
8
9
10
10
11
11
12
13
14
14
15
15
16
16
17
18
18
19
19
20
21
21
22
23
23
24
25
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
3.1
3.3
3.4
3.5
3.6
3.7
3.8
3.9
3.10
3.11
3.12
3.13
3.14
3.15
3.16
3.17
3.18
3.19
3.20
3.21
3.22
3.23
3.24
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
4.10
4.11
4.12
4.13
4.14
4.15
4.16
Hole concentration at equilibrium . . . . . . . . .

Position of Fermi level . . . . . . . . . . . . . . .
Diffusion coefficients of electrons and holes . . .
Diffusion length . . . . . . . . . . . . . . . . . .
Concentration of holes and electrons . . . . . . .
Electron transit time . . . . . . . . . . . . . . . .
Resistivity of intrinsic Ge . . . . . . . . . . . . .
Hole and electron concentration . . . . . . . . . .
Ratio of donor atoms to Si atom . . . . . . . . .
Equillibrium electron and hole densities . . . . .
Carrier concentration . . . . . . . . . . . . . . .
Generation rate due to irradiation . . . . . . . .
Mobility of minority charge carrier . . . . . . . .
Hall and electron diffusion current . . . . . . . .
Energy band gap of semiconductor material used
Current density in Si . . . . . . . . . . . . . . . .
Resistance of the bar . . . . . . . . . . . . . . . .
Depletion width . . . . . . . . . . . . . . . . . .
Minority carrier density . . . . . . . . . . . . . .
Collector current density . . . . . . . . . . . . .
Band gap . . . . . . . . . . . . . . . . . . . . . .
Total energy absorbed by sample . . . . . . . . .
Hole current . . . . . . . . . . . . . . . . . . . .
Tuning range . . . . . . . . . . . . . . . . . . . .
Contact difference of potential . . . . . . . . . .
Height of the potential energy barrier . . . . . .
Forward current . . . . . . . . . . . . . . . . . .
Anticipated factor . . . . . . . . . . . . . . . . .
Leakage resistance . . . . . . . . . . . . . . . . .
Dynamic resistance . . . . . . . . . . . . . . . . .
Barrier capacitance . . . . . . . . . . . . . . . .
Width of the depletion layer . . . . . . . . . . . .
Current in the junction . . . . . . . . . . . . . .
Forward biasing voltage . . . . . . . . . . . . . .
Theoretical diode current . . . . . . . . . . . . .
Diode dynamic resistance . . . . . . . . . . . . .
DC load line and operating point . . . . . . . . .
AC resistance of a Ge diode . . . . . . . . . . . .
5
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26
26
27
28
28
29
30
30
31
31
32
32
33
33
34
35
35
36
37
37
38
38
39
41
42
43
44
45
46
46
47
47
49
49
50
50
51
52
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
4.17
4.18
4.19
4.20
4.21
4.22
4.23
4.24
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
5.10
5.11
5.12
5.13
5.14
5.15
5.16
5.17
5.18
5.19
5.20
5.21
5.22
5.23
5.24
5.25
5.26
5.27
5.28
5.29
5.30
Junction potential . . . . . . . . . . . . .
Dynamic resistance . . . . . . . . . . . . .
Width of the depletion layer . . . . . . . .
Barrier capacitance of a Ge pn junction .
Diameter . . . . . . . . . . . . . . . . . .
Temperature of junction . . . . . . . . . .
Voltage . . . . . . . . . . . . . . . . . . .
Reverse saturation current . . . . . . . . .
Current . . . . . . . . . . . . . . . . . . .
IDQ and VDSQ . . . . . . . . . . . . . .
Designing of biasing circuit . . . . . . . .
IDQ VGSQ and VDS . . . . . . . . . . .
IDSQ VGSQ and VDSQ . . . . . . . . . .
ID and VDS and region of operation . . .
DC load line and operating point . . . . .
Region at which MOSFET ia biased . . .
IDQ and VDSQ . . . . . . . . . . . . . .
Necessary value of Rs . . . . . . . . . . .
ID and VDS . . . . . . . . . . . . . . . .
Designing of NMOS CS circuit . . . . . .
IDQ and VDS . . . . . . . . . . . . . . .
The region of operation . . . . . . . . . .
VDS VGS and ID . . . . . . . . . . . . .
All dc voltages . . . . . . . . . . . . . . .
ID and VDS . . . . . . . . . . . . . . . .
Various voltage and current . . . . . . . .
Q point . . . . . . . . . . . . . . . . . . .
IDQ VGSQ and VD . . . . . . . . . . . .
ID VD VS and VG . . . . . . . . . . . . .
Value of RD . . . . . . . . . . . . . . . .
Q point . . . . . . . . . . . . . . . . . . .
IDSQ VGSQ and VDSQ . . . . . . . . . .
ID VDS VGS and Av . . . . . . . . . . .
VGS ID and VDS . . . . . . . . . . . . .
Drain current and source to drain voltage
IDQ VGSQ VD and VS . . . . . . . . . .
VDD RD and VGS . . . . . . . . . . . . .
Value of ID . . . . . . . . . . . . . . . . .
6
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52
53
54
55
55
56
57
57
59
60
61
61
62
63
64
65
66
67
67
68
69
70
71
71
73
74
75
75
76
77
78
79
80
81
82
83
84
84
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
Exa
5.31
5.32
5.34
5.35
5.36
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
6.13
6.14
6.15
6.16
6.18
6.19
6.20
6.22
6.23
6.24
6.25
6.26
6.27
6.28
6.29
7.1
7.2
7.3
Voltages at all nodes . . . . . . . . . . . . . .

Av Ri Ro and Rodesh . . . . . . . . . . . . .
Current flow through M1 MOSFET . . . . .
Value of R and VD . . . . . . . . . . . . . . .
ID and VDS . . . . . . . . . . . . . . . . . .
Common base dc current gain . . . . . . . . .
Base current . . . . . . . . . . . . . . . . . .
Value of IC and IB . . . . . . . . . . . . . . .
Collector and base current . . . . . . . . . . .
Value of alpha and bita . . . . . . . . . . . .
DC load line . . . . . . . . . . . . . . . . . .
Operating point and stability factor . . . . .
Base resistor and stability factor . . . . . . .
DC bias voltage . . . . . . . . . . . . . . . .
Collector current collector to emitter voltage
bility factor . . . . . . . . . . . . . . . . . . .
collector current and stability factor . . . . .
IB IC VCE and stability . . . . . . . . . . . .
Emitter and collector current and VCE . . .
Change in Q point . . . . . . . . . . . . . . .
Value of alphaDC and emitter current . . . .
IC and IB . . . . . . . . . . . . . . . . . . . .
Base current . . . . . . . . . . . . . . . . . .
Emitter current . . . . . . . . . . . . . . . . .
Region of operation . . . . . . . . . . . . . .
IB IC and VCE . . . . . . . . . . . . . . . . .
Region of operation . . . . . . . . . . . . . .
Value of VBB . . . . . . . . . . . . . . . . . .
Minimum value of RC required . . . . . . . .
Value of RE . . . . . . . . . . . . . . . . . .
Collector voltage . . . . . . . . . . . . . . . .
Component value . . . . . . . . . . . . . . . .
Open circuit voltage . . . . . . . . . . . . . .
Photocurrent density . . . . . . . . . . . . . .
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85
87
88
88
89
91
91
92
92
93
93
94
95
95
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99
99
100
101
102
103
103
104
105
106
107
108
108
109
111
113
113
115
Chapter 2
Energy Bands And Charge
Carriers in Semiconductor
Scilab code Exa 2.1 Energy gap

// Exa 2 . 1
format ( v ,7)
clc ;
clear ;
close ;
// Given d a t a
lembda = 11000; // i n
lembda = lembda * 10^ -10; // i n m
h = 6.625*10^ -34; // P l a n c k c o n s t a n t
c = 3*10^8; // s p e e d o f l i g h t i n m/ s
e = 1.6*10^ -19; // c h a r g e o f e l e c t r o n i n C
// Energy o f t h e i n c i d e n t p h o t o n s h o u l d a t l e a s t be ,
h v= Eg , s o
13 E_g = ( h * c ) /( lembda * e ) ; // i n eV
14 disp ( E_g , The e n e r g y gap i n eV i s ) ;
1
2
3
4
5
6
7
8
9
10
11
12
Scilab code Exa 2.2 Wavelength

1
2
3
4
5
6
7
8
9
10
11
12
13
14
// Exa 2 . 2
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
E_g = 0.75; // i n eV
e = 1.6*10^ -19; // i n C
h = 6.63*10^ -34; // i n J
c = 3*10^8; // i n m/ s
// Formula E g = ( h c ) / ( lembda e ) ;
lembda = ( h * c ) /( E_g * e ) ; // i n m
lembda = lembda * 10^10; // i n
disp ( lembda , The w a v e l e n g t h i n
i s );
Scilab code Exa 2.3 Position of Fermi level

1 // Exa 2 . 3
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 del_E = 0.3; // i n eV
8 T1 = 300; // i n K
9 T2 = 330; // i n K
10 // d e l E = K T1 l o g (N/ N c ) where d e l E= E CE F
11 // d e l E 1 = K T2 l o g (N/ N c ) where d e l E 1= E C
12
13
E F a t T= 330
K
del_E1 = del_E *( T2 / T1 ) ; // i n eV
disp ( The Fermi l e v e l w i l l be + string ( del_E1 ) + eV
b e l o w t h e c o n d u c t i o n band )
Scilab code Exa 2.4 Probability

// Exa 2 . 4
clc ;
clear ;
close ;
format ( e ,8)
// Given d a t a
N_c = 2.8 * 10^19; // i n cm3
del_E = 0.25; // f e r m i e n e r g y i n eV
KT = 0.0259; // where K i s Boltzmann c o n s t a n t
f_F = exp ( -( del_E ) / KT ) ;
disp ( f_F , The p r o b a b i l i t y i n t h e c o n d u c t i o n band i s
o c c u p i e d by an e l e c t r o n i s ) ;
12 // E v a l u a t i o n o f e l e c t r o n c o n c e n t r a t i o n
13 n_o = N_c * exp ( -( del_E ) / KT ) ; // i n cm3
14 disp ( n_o , The t h e r m a l e q u i l i b r i u m e l e c t r o n
c o n c e n t r a t i o n i n cm3 i s ) ;
1
2
3
4
5
6
7
8
9
10
11
Scilab code Exa 2.5 Thermal equilibrium hole concentration

1
2
3
4
5
6
7
8
9
10
11
// Exa2 . 5
clc ;
clear ;
close ;
format ( v ,9)
// Given d a t a
T1 = 300; // i n K
T2 = 400; // i n K
del_E = 0.27; // Fermi l e v e l i n eV
KT = (0.0259) * ( T2 / T1 ) ; // i n eV
N_v = 1.04 * 10^19; // i n cm3
10
12 N_v = N_v * ( T2 / T1 ) ^(3/2) ; // i n cm3

13 // H o l e c o n c e n t r a t i o n
14 p_o = N_v * exp ( -( del_E ) / KT ) ; // i n p e r cm3
15 disp ( p_o , The t h e r m a l e q u i l i b r i u m h o l e c o n c e n t r a t i o n
p e r cm3 i s ) ;
Scilab code Exa 2.6 Mobility of electrons in copper

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// Exa 2 . 6
clc ;
clear ;
close ;
format ( v ,7)
// Given d a t a
At = 63.5; // a t o m i c w e i g h t
Rho = 1.7*10^ -6; // i n ohm cm
d = 8.96; // i n gm/ c c
N_A = 6.02*10^23; // i n /gm . mole
e = 1.6*10^ -19; // i n C
// Number o f atoms o f c o p p e r p e r s e n t p e r u n i t volume
n = ( N_A / At ) * d ;
Miu_e = 1/( Rho * n * e ) ; // i n cm2/ v o l t . s e c
disp ( Miu_e , The e l e c t r o n m o b i l i t y i n cm2/ v o l t s e c
i s );
Scilab code Exa 2.7 Density of free electrons

1 // Exa 2 . 7
2 clc ;
3 clear ;
4 close ;
5 format ( v ,9)
6 // Given d a t a
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l = 0.1; // i n m
A = 1.7; // i n mm2
A = A * 10^ -6; // i n m2
R = 0.1; // i n ohm
At = 63.5; // a t o m i c w e i g h t
N_A = 6.02*10^23;
d = 8.96; // i n gm/ c c
n = ( N_A / At ) * d ; // i n / c c
n = n * 10^6; // i n /m3
e = 1.6*10^ -19; // e l e c t r o n c h a r g e i n C
// R e s i s t i v i t y o f c o p p e r
// Formula R = Rho ( l /A) ;
Rho = ( R * A ) / l ; // i n ohm m
// C o n d u c t i v i t y o f c o p p e r
Sigma = 1/ Rho ; // i n mho/m
// Formula Sigma = n e Miu e
Miu_e = Sigma /( n * e ) ; // i n m2/V . s e c
disp ( Miu_e , The m o b i l i t y i n m2/Vs e c i s ) ;
Scilab code Exa 2.8 Drift velocity

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// Exa 2 . 8
clc ;
clear ;
close ;
format ( v ,7)
// Given d a t a
d = 10.5; // i n gm/ c c
At = 108; // a t o m i c w e i g h t
N_A = 6.025*10^23; // i n /gm mole
r = 10^ -3; // i n m
q = 1.6*10^ -19; // i n C
// The number o f e l e c t r o n s p e r u n i t volume
n = ( N_A / At ) * d ; // i n /cm3
n = n * 10^6; // i n /m3
12
15 A = %pi *(( r ) ^2) ; // i n m2

16 I = 2; // i n A
17 // E v a l u a t i o n o f d r i v t v e l o c i t y w i t h t h e h e l p o f
current
18 // I = q nAV ;
19 V = I /( n * q * A ) ; // i n m/ s
20 disp (V , The d r i f t v e l o c i t y i n m/ s i s ) ;
21
22 // Note : C a l c u l a t i o n i n t h e book i s wrong , s o t h e
a n s w e r i n t h e book i s wrong .
Scilab code Exa 2.9 Mobility of charge carriers

// Exa 2 . 9
clc ;
clear ;
close ;
format ( v ,8)
// Given d a t a
d = 1.03; // i n mm
d = d *10^ -3; // i n m
r = d /2; // i n m
R = 6.51; // i n ohm
l = 300; // i n mm
n = 8.4*10^28; // i n /m3
A = %pi * r ^2; // c r o s s s e c t i o n a r e a
// Formula R = Rho ( l /A) ;
Rho = ( R * A ) / l ; // i n ohm m
disp ( Sigma , The c o n d u c t i v i t y o f c o p p e r i n mho/m i s )
;
19 // E v a l u a t i o n o f m o b i l i t y
20 // Formula s i g m a = n e Miu e
21 Miu_e = Sigma /( n * e ) ; // i n m2/V . s e c
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disp ( Miu_e , The m o b i l i t y i n m2/Vs e c i s ) ;
Scilab code Exa 2.10 Conductivity of pure Si

1 // Exa 2 . 1 0
2 format ( v ,8)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 Mu_e = 1500; // i n cm2/ v o l t s e c
8 Mu_h = 500; // i n cm2/ v o l t s e c
9 n_i = 1.6 * 10^10; // i n p e r cm3
10 e = 1.6 * 10^ -19; // i n C
11 // The c o n d u c t i v i t y o f p u r e s e m i c o n d u c t o r
12 Sigma = n_i * ( Mu_e + Mu_h ) * e ; // i n mho/cm
13 disp ( Sigma , The c o n d u c t i v i t y o f p u r e s e m i c o n d u c t o r
i n mho/cm i s ) ;
Scilab code Exa 2.11 Number of donor atoms

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// Exa 2 . 1 1
format ( v ,9)
clc ;
clear ;
close ;
// Given d a t a
Rho = 10; // i n
cm
Mu_d = 500; // i n cm2/ v . s .
// The number o f d o n o r atom
n_d = 1/( Rho * e * Mu_d ) ; // i n p e r cm3
disp ( n_d , The number o f d o n o r atom p e r cm3 i s ) ;
14
Scilab code Exa 2.12 Conductivity of speciman

1 // Exa 2 . 1 2
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 AvagadroNumber = 6.02 * 10^23; // i n atoms /gm . mole
8 at_Ge = 72.6; // atom w e i g h t o f Ge
9 e = 1.6 * 10^ -19; // i n C
10 D_Ge = 5.32; // d e n s i t y o f Ge i n gm/ c . c
11 Mu = 3800; // i n cm2/ v . s .
12 C_Ge = ( AvagadroNumber / at_Ge ) * D_Ge ; //
c o n c e n t r a t i o n o f Ge atoms i n p e r cm3
13 n_d = C_Ge /10^8; // i n p e r c c
14 Sigma = n_d * Mu * e ; // i n mho/cm
15 disp ( Sigma , The c o n d u c t i v i t y i n mho/cm i s ) ;
Scilab code Exa 2.13 Mobility of electrons in Ge

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// Exa2 . 1 3
format ( v ,5)
clc ;
clear ;
close ;
// Given d a t a
Rho = 0.3623 * 10^ -3; // i n Ohm m
D = 4.42 * 10^28; // Ge d e n s i t y i n atom /m3
n_d = D / 10^6; // i n atom /m3
15
11 e = 1.6 * 10^ -19; // i n C

12 // The m o b i l i t y o f e l e c t r o n i n germanium
13 Mu = Sigma /( n_d * e ) ; // i n m2/V . s e c
14 disp ( Mu , The m o b i l i t y o f e l e c t r o n i n germanium i n m
2/V . s e c i s ) ;
Scilab code Exa 2.14 Density and mobility of holes

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// Exa 2 . 1 4
format ( v ,7)
clc ;
clear ;
close ;
// Given d a t a
AvagadroNumber = 6.025 * 10^26; // i n kg . Mole
W = 72.59; // a t o m i c w e i g h t o f Ge
D = 5.36 * 10^3; // d e n s i t y o f Ge i n kg /m3
Rho = 0.42; // r e s i s t i v i t y i n Ohm m
e = 1.6 * 10^ -19; // i n C
n = ( AvagadroNumber / W ) * D ; // number o f Ge atoms
p r e s e n t p e r u n i t volume
// H o l e s p e r u n i t volume , H = n10 6%
H = n *10^ -8;
a=H;
// Formula s i g m a= a e Mu h
Mu_h = Sigma /( a * e ) ; // i n m2/V . s e c
disp ( Mu_h , M o b i l i t y o f h o l e s i n m2/V . s e c i s ) ;
Scilab code Exa 2.15 Current produced

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// Exa 2 . 1 5
format ( v ,5)
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clc ;
clear ;
close ;
// Given d a t a
e = 1.6 * 10^ -19; // i n C
n_i = 2 * 10^19; // i n /m3
Mu_e = 0.36; // i n m2/ v . s
Mu_h = 0.17; // i n m2/ v . s
A = 1 * 10^ -4; // i n m2
V = 2; // i n v o l t s
l = 0.3; // i n mm
l = l * 10^ -3; // i n m
E = V / l ; // i n v o l t /m
Sigma = n_i * e * ( Mu_e + Mu_h ) ; // i n mho/m
// J = I /A = Sigma E
I = Sigma * E * A ;
disp (I , The c u r r e n t p r o d u c e d i n a s m a l l germanium
p l a t e i n amp i s ) ;
Scilab code Exa 2.16 Resistivity of doped Ge

// Exa 2 . 1 6
format ( v ,9)
clc ;
clear ;
close ;
// Given d a t a
D = 4.2 * 10^28; // d e n s i t y o f Ge atoms p e r m3
N_d = D / 10^6; // p e r m3
e = 1.6 * 10^ -19; // i n C
Mu_e = 0.36; // i n m2/Vs e c
// Donor c o n c e n t r a t i o n i s v e r y l a r g e a s compared t o
i n t r i n s i c carrier concentration
12 Sigma_n = N_d * e * Mu_e ; // i n mho/m ( i n t r i n s i c
c o n c e n t r a t i o n can be n e g l e c t e d )
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Rho_n = 1/ Sigma_n ; // i n ohm m

disp ( Rho_n , The r e s i s t i v i t y o f d r o p Ge i n ohm m i s
);
Scilab code Exa 2.17 Current produced in Ge sample

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// Exa 2 . 1 7
format ( v ,6)
clc ;
clear ;
close ;
// g i v e n d a t a
e = 1.6 * 10^ -19; // i n C
n_i = 1 * 10^19; // i n p e r m3
Mu_e = 0.36; // i n m2/ v o l t . s e c
Mu_h = 0.17; // i n m2/ v o l t . s e c
A = 2; // i n cm2
A = A * 10^ -4; // im m2
t = 0.1; // i n mm
t = t * 10^ -3; // i n m
V = 4; // i n v o l t s
Sigma_i = n_i * e * ( Mu_e + Mu_h ) ; // i n mho/m
J = Sigma_i * ( V / t ) ; // i n Amp/m2
// C u r r e n t p r o d u c e d , I= J A
I = J * A ; // i n Amp
disp (I , The c u r r e n t p r o d u c e d i n a Ge s a m p l e i n Amp
i s );
Scilab code Exa 2.18 Conductivity of pure Si

1 // Exa 2 . 1 8
2 format ( v ,8)
3 clc ;
18
4 clear ;
5 close ;
6 // Given d a t a
7 e = 1.6 * 10^ -19; // i n C
8 Mu_h = 500; // i n cm2/V . s .
9 Mu_e = 1500; // i n cm2/V . s .
10 n_i = 1.6 * 10^10; // i n p e r cm3
11 // C o n d u c t i v i t y o f p u r e s i l i c o n a t room t e m p e r a t u r e
12 Sigma_i = n_i * e * ( Mu_h + Mu_e ) ; // i n mho/cm
13 disp ( Sigma_i , C o n d u c t i v i t y o f p u r e s i l i c o n a t room
t e m p e r a t u r e i n mho/cm i s ) ;
Scilab code Exa 2.19 Hall voltage produced

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// Exa 2 . 1 9
format ( v ,9)
clc ;
clear ;
close ;
// Given d a t a
l = 0.50*10^ -2; // w i d t h o f r i b b o n i n m
d = 0.10*10^ -3; // t h i c k n e s s o f r i b b o n i n m
A = l * d ; // a r e a o f r i b b o n i n m2
B = 0.8; // i n T e s l a
D = 10.5; // d e n s i t y i n gm/ c c
I = 2; // i n amp
q = 1.6 * 10^ -19; // i n C
n =6*10^28; // number o f e l e c . p e r m3
V_H = ( I * B * d ) /( n * q * A ) ; // i n v o l t s
disp ( V_H , The h a l l V o l t a g e p r o d u c e d i n v o l t s i s ) ;
Scilab code Exa 2.20 Hall coefficient and mobility of electrons

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// Exa 2 . 2 0
format ( v ,8)
clc ;
clear ;
close ;
// Given d a t a
l = 1; // i n m
d = 1; // i n cm
d = d * 10^ -2; // i n m
W = 1; // i n mm
W = W * 10^ -3; // i n m
A = d * W ; // i n m2
I = 1; // i n A
B = 1; // T e s l a
V_H = 0.074 * 10^ -6; // i n v o l t s
Sigma = 5.8 * 10^7; // i n mho/m
// The h a l l c o e f f i c i e n t
R_H = ( V_H * A ) /( B * I * d ) ; // i n m3/ c
disp ( R_H , The h a l l c o e f f i c i e n t i n m3/ c i s ) ;
// M o b i l i t y
of e l e c t r o n s in copper
Mu = Sigma * R_H ; // i n m2/ v o l t s e c
disp ( Mu , The m o b i l i t y
of e l e c t r o n s in copper in m
2/ v o l t s e c i s ) ;
Scilab code Exa 2.21 Concentration of holes in Si crystals

1 // Exa2 . 2 1
2 format ( v ,7)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 n_i = 1.4 * 10^18; // i n /m3
8 n_D = 1.4 * 10^24; // i n /m3
9 // C o n c e n t r a t i o n o f e l e c t r o n s
20
10 n = n_D ; // i n /m3
11 p = n_i ^2/ n ; // i n /m3
12 // The r a t i o o f e l e c t r o n s t o h o l e c o n c e n t r a t i o n
13 R = n / p ;
14 disp (R , The r a t i o o f e l e c t r o n s t o h o l e c o n c e n t r a t i o n
i s );
Scilab code Exa 2.22 Hall angle

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// Exa 2 . 2 2
format ( v ,10)
clc ;
clear ;
close ;
// Given d a t a
R = 9 * 10^ -3; // i n ohmm
R_H = 3.6 * 10^ -4; // i n m3
e = 1.6 * 10^ -19; // i n C
Sigma = 1/ R ; // i n ( ohmm) 1
Rho = 1/ R_H ; // i n coulomb /m3
// D e n s i t y o f c h a r g e c a r r i e r s
n = Rho / e ; // i n /m3
disp (n , D e n s i t y o f c h a r g e c a r r i e r s p e r m3 i s ) ;
// M o b i l i t y o f c h a r g e c a r r i e r s
Mu = Sigma * R_H ; // i n m2/ vs
disp ( Mu , M o b i l i t y o f c h a r g e c a r r i e r s i n m2/Vs i s )
;
Scilab code Exa 2.23 Current density in speciman

1 // Exa 2 . 2 3
2 format ( v ,6)
3 clc ;
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clear ;
close ;
// Given d a t a
e = 1.6 * 10^ -19; // i n C
R_H = 0.0145; // i n m3/ coulomb
Mu_e = 0.36; // i n m2/ vs
E = 100; // i n V/m
n = 1/( e * R_H ) ; // i n /m3
// The c u r r e n t d e n s i t y o f s p e c i m e n
J = n * e * Mu_e * E ; // i n A/m2
disp (J , The c u r r e n t d e n s i t y o f s p e c i m e n i n A/m2 i s
);
Scilab code Exa 2.24 Relaxation time

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// Exa 2 . 2 4
format ( v ,9)
clc ;
clear ;
close ;
// Given d a t a
Mu_e = 7.04 * 10^ -3; // i n m2/ vs
m = 9.1 * 10^ -31;
E_F = 5.5; // i n eV
n = 5.8 * 10^28;
e = 1.6 * 10^ -19; // i n C
// R e l a x a t i o n Time
Torque = ( Mu_e / e ) * m ; // i n s e c
disp ( Torque , R e l a x a t i o n Time i n s e c i s ) ;
// R e s i s t i v i t y o f c o n d u c t o r
Rho = 1 /( n * e * Mu_e ) ; // i n ohmm
disp ( Rho , R e s i s t i v i t y o f c o n d u c t o r i n ohmm i s ) ;
// V e l o c i t y o f e l e c t r o n s w i t h f e r m i e n e r g y
V_F = sqrt ((2 * E_F * e ) / m ) ; // i n m/ s
disp ( V_F , V e l o c i t y o f e l e c t r o n s w i t h f e r m i e n e r g y i n
22
m/ s i s ) ;
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22
// Note : The c a l c u l a t e d v a l u e o f R e s i s t i v i t y o f
c o n d u c t o r i s wrong .
Scilab code Exa 2.25 Temperature

// Exa 2 . 2 5
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
E = 5.95; // i n eV
EF = 6.25; // i n eV
delE = 0.01;
// d e l E= 11/(1+ exp ( ( EEF) /KT) )
K =1.38*10^ -23; // Boltzmann C o n s t a n t i n J /K
// The t e m p e r a t u r e a t which t h e r e i s a 1 %
p r o b a b i l i t y t h a t a s t a t e 0 . 3 0 eV b e l o w t h e Fermi
energy l e v e l
13 T = (( E - EF ) / log (1/(1 - delE ) -1) *1.6*10^ -19) / K ; // i n K
14 disp (T , The t e m p e r a t u r e i n K i s : )
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Scilab code Exa 2.26 Thermal equilibrium hole concentration

1 // Exa 2 . 2 6
2 format ( v ,9)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 N_V = 1.04 * 10^19; // i n cm3
23
T1 = 300; // i n K
T2 = 400; // i n K
del_E = 0.27; // i n eV
// The v a l u e o f N V a t T=400 K,
N_V = N_V * ( T2 / T1 ) ^1.5; // i n cm3
KT = (0.0259) * ( T2 / T1 ) ; // i n eV
// The t h e r m a l e q u i l i b r i u m h o l e c o n c e n t r a t i o n i n
silicon
15 P_o = N_V * exp ( -( del_E ) / KT ) ; // i n cm3
16 disp ( P_o , The t h e r m a l e q u i l i b r i u m h o l e c o n c e n t r a t i o n
i n s i l i c o n i n cm3 i s ) ;
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Scilab code Exa 2.27 Required doping concentration

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// Exa 2 . 2 7
format ( v ,10)
clc ;
clear ;
close ;
// Given d a t a
N_c = 2.8 * 10^19;
N_V = 1.04 *10^19;
T1 = 550; // i n K
T2 = 300; // i n K
E_g = 1.12;
KT = (0.0259) ;
n_i = sqrt ( N_c * N_V *( T1 / T2 ) ^3* exp ( -( E_g ) / KT * T2 / T1 )
) ; // i n cm3
// n o = N d /2 + s q r t ( ( N d / 2 ) 2 + ( n i ) 2 )
// 1 . 0 5 N d N d/2= s q r t ( ( N d / 2 ) 2 + ( n i ) 2 )
// Minimum d o n o r c o n c e n t r a t i o n r e q u i r e d
N_d = sqrt (( n_i ) ^2/((0.55) ^2 -1/4) ) ;
disp ( N_d , Minimum d o n o r c o n c e n t r a t i o n r e q u i r e d i n cm
3 i s ) ;
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Scilab code Exa 2.28 Quasi Fermi energy levels

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// Exa 2 . 2 8
format ( v ,7)
clc ;
clear ;
close ;
// Given d a t a
T = 300; // i n K
n_o = 10^15; // i n cm3
n_i = 10^10; // i n cm3
p_o = 10^5; // i n cm3
del_n = 10^13; // i n cm3
del_p = del_n ; // i n cm3
KT = 0.0259; // i n eV
delta_E1 = KT * log ( n_o / n_i ) ; // v a l u e o f E FE F i i n eV
delta_E2 = KT * log (( n_o + del_n ) / n_i ) ; // v a l u e o f E Fn
E F i i n eV
delta_E3 = KT * log (( p_o + del_p ) / n_i ) ; // v a l u e o f E Fi
E Fp i n eV
disp ( delta_E1 , The Fermi l e v e l f o r t h e r m a l
e q u i l l i b r i u m i n eV i s : )
disp ( delta_E2 , The q u a s e Fermi l e v e l f o r e l e c t r o n s
i n non e q u i l l i b r i u m i n eV i s : )
disp ( delta_E3 , The q u a s i Fermi l e v e l f o r h o l e s i n
non e q u i l l i b r i u m i n eV i s : )
disp ( The q u a s i Fermi l e v e l f o r e l e c t r o n s i s a b o v e
E Fi )
disp ( While t h e q u a s i Fermi l e v e l f o r h o l e s i s b e l o w
E Fi )
25
Chapter 3
Excess Carriers In
Semiconductors
Scilab code Exa 3.1 Hole concentration at equilibrium

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// Exa 3 . 1
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
N_d = 10^17; // atoms /cm3
n_i = 1.5 * 10^10; // i n /cm3
n_o = 10^17; // i n cm3
// p o n o = ( n i ) 2
p_o = ( n_i ) ^2 / n_o ; // i n h o l e s /cm3
disp ( p_o , The h o l e c o n c e n t r a t i o n a t e q u i l i b r i u m i n
h o l e s /cm3 i s ) ;
Scilab code Exa 3.3 Position of Fermi level
26
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// Exa 3 . 3
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
n_i = 1.5 * 10 ^10; // i n /cm3 f o r s i l i c o n
N_d = 10^17; // i n atoms /cm3
n_o = 10^17; // e l e c t r o n s /cm3
KT = 0.0259;
// E r E i = KT l o g ( n o / n i )
del_E = KT * log ( n_o / n_i ) ; // i n eV
disp ( The e n e r g y band f o r t h i s t y p e m a t e r i a l i s Ei +
+ string ( del_E ) + eV ) ;
Scilab code Exa 3.4 Diffusion coefficients of electrons and holes

// Exa 3 . 4
format ( v ,7)
clc ;
clear ;
close ;
// Given d a t a
K = 1.38 * 10^ -23; // i n J /K
T = 27; // i n d e g r e e
T = T + 273; // i n K
e = 1.6 * 10^ -19; // i n C
Mu_e = 0.17; // i n m2/ vs
Mu_e1 = 0.025; // i n m2/ vs
D_n = (( K * T ) / e ) * Mu_e ; // i n m2/ s
disp ( D_n , The d i f f u s i o n c o e f f i c i e n t o f e l e c t r o n s i n
m2/ s i s ) ;
15 D_p = (( K * T ) / e ) * Mu_e1 ; // i n m2/ s
16 disp ( D_p , The d i f f u s i o n c o e f f i c i e n t o f
holes in m
2/ s i s ) ;
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Scilab code Exa 3.5 Diffusion length

// Exa 3 . 5
format ( v ,8)
clc ;
clear ;
close ;
// Given d a t a
Mu_n = 0.15; // i n m2/ vs
K = 1.38 * 10^ -23; // i n J /K
T = 300; // i n K
del_n = 10^20; // i n p e r m3
Toh_n = 10^ -7; // i n s
e = 1.6 * 10^ -19; // i n C
D_n = Mu_n * (( K * T ) / e ) ; // i n m2/ s
disp ( D_n , The d i f f u s i o n c o e f f i c i e n t i n m2/ s i s ) ;
L_n = sqrt ( D_n * Toh_n ) ; // i n m
disp ( L_n , The D i f f u s i o n l e n g t h i n m i s ) ;
J_n = ( e * D_n * del_n ) / L_n ; // i n A/m2
disp ( J_n , The d i f f u s i o n c u r r e n t d e n s i t y i n A/m2 i s
);
19 // Note : The v a l u e o f d i f f u s i o n c o e f f i c i e n t i n t h e
book i s wrong .
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Scilab code Exa 3.6 Concentration of holes and electrons

1 // Exa 3 . 6
2 format ( v ,8)
3 clc ;
4 clear ;
5 close ;
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// Given d a t a
Sigma = 0.1; // i n ( ohmm) 1
Mu_n = 1300;
n_i = 1.5 * 10^10;
q = 1.6 * 10^ -19; // i n C
n_n = Sigma /( Mu_n * q ) ; // i n e l e c t r o n s /cm3
n_n = n_n *10^6; // p e r m3
disp ( n_n , The c o n c e n t r a t i o n o f e l e c t r o n s p e r m3 i s
);
14 p_n = ( n_i ) ^2/ n_n ; // i n p e r cm3
15 p_n = p_n * 10^6; // i n p e r m3
16 disp ( p_n , The c o n c e n t r a t i o n o f h o l e s p e r m3 i s ) ;
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13
Scilab code Exa 3.7 Electron transit time

// Exa 3 . 7
format ( v ,9)
clc ;
clear ;
close ;
// Given d a t a
Mu_e = 0.13; // i n m2/ vs
Mu_h = 0.05; // i n m2/ vs
Toh_h = 10^ -6; // i n s
L = 100; // i n
m
L = L * 10^ -6; // i n m
V = 2; // i n V
t_n = L ^2/( Mu_e * V ) ; // i n s
disp ( t_n , E l e c t r o n t r a n s i t t i m e i n s e c o n d s i s ) ;
p_g = ( Toh_h / t_n ) * (1 + Mu_h / Mu_e ) ; // p h o t o
conductor gain
16 disp ( p_g , Photo c o n d u c t o r g a i n i s ) ;
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// Note : There i s a c a l c u l a t i o n e r r o r t o e v a l u a t e
t h e v a l u e o f t n . So t h e a n s w e r i n t h e book i s
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wrong
Scilab code Exa 3.8 Resistivity of intrinsic Ge

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// Exa 3 . 8
format ( v ,5)
clc ;
clear ;
close ;
// Given d a t a
n_i = 2.5 * 10^13;
Mu_n = 3800;
Mu_p = 1800;
q = 1.6 * 10^ -19; // i n C
Sigma = n_i * ( Mu_n + Mu_p ) * q ; // i n ( ohmcm ) 1
Rho = 1/ Sigma ; // i n ohmcm
Rho = round ( Rho ) ;
disp ( Rho , The r e s i s t i v i t y o f i n t r i n s i c germanium i n
ohmcm i s ) ;
N_D = 4.4 * 10^22/(1*10^8) ; // i n atoms /cm3
Sigma_n = N_D * Mu_n * q ; // i n ( ohmcm ) 1
Rho_n = 1/ Sigma_n ; // i n ohmcm
disp ( Rho_n , I f a d o n o r t y p e i m p u r i t y i s added t o t h e
e x t e n t o f 1 atom p e r 1 0 8 Ge atoms , t h e n t h e
r e s i s t i v i t y d r o p s i n ohmcm i s ) ;
Scilab code Exa 3.9 Hole and electron concentration

1 // Exa 3 . 9
2 format ( v ,8)
3 clc ;
4 clear ;
5 close ;
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12
// Given d a t a
n_i = 10^16; // i n /m3
N_D = 10^22; // i n /m3
n = N_D ; // i n /m3
disp (n , E l e c t r o n c o n c e n t r a t i o n p e r m3 i s ) ;
p = ( n_i ) ^2/ n ; // i n /m3
disp (p , H o l e c o n c e n t r a t i o n p e r m3 i s ) ;
Scilab code Exa 3.10 Ratio of donor atoms to Si atom

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// Exa 3 . 1 0
format ( v ,8)
clc ;
clear ;
close ;
// Given d a t a
Rho = 9.6 * 10^ -2; // i n ohmm
Sigma_n = 1/ Rho ; // i n ( ohmm) 1
q = 1.6 * 10^ -19; // i n C
Mu_n = 1300 * 10^ -4; // i n m2/Vs e c
N_D = Sigma_n / ( Mu_n * q ) ; // i n atoms /m3
A_D = 5*10^22; // Atom d e n s i t y i n atoms /cm3
A_D = A_D * 10^6; // atoms /m3
R_si = N_D / A_D ; // r a t i o
disp ( R_si , The r a t i o o f d o n o r atom t o s i l i c o n atom
i s );
Scilab code Exa 3.11 Equillibrium electron and hole densities

1 // Exa 3 . 1 1
2 format ( v ,9)
3 clc ;
4 clear ;
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close ;
// Given d a t a
n_i = 1.5 * 10^10; // i n p e r cm3
n_n = 2.25 * 10^15; // i n p e r cm3
p_n = ( n_i ) ^2/ n_n ; // i n p e r cm3
disp ( p_n , The e q u i l i b r i u m e l e c t r o n p e r cm3 i s ) ;
h_n = n_n ; // i n cm3
disp ( h_n , H o l e d e n s i t i e s i n p e r cm3 i s ) ;
Scilab code Exa 3.12 Carrier concentration

// Exa 3 . 1 2
format ( v ,7)
clc ;
clear ;
close ;
// Given d a t a
N_A = 2 * 10^16; // i n atoms /cm3
N_D = 10^16; // i n atoms /cm3
C_c = N_A - N_D ; // C c s t a n d s f o r C a r r i e r
c o n c e n t r a t i o n i n /cm3
10 disp ( C_c , C a r r i e r c o n c e n t r a t i o n p e r cm3 i s ) ;
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Scilab code Exa 3.13 Generation rate due to irradiation

1 // Exa 3 . 1 3
2 format ( v ,7)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 del_n = 10^15; // i n cm3
8 Torque_p = 10 * 10^ -6; // i n s e c
32
9 R_g = del_n / Torque_p ; // i n h o l e p a i r s / s e c /cm3

10 disp ( R_g , The r a t e o f g e n e r a t i o n o f m i n o r i t y c a r r i e r
i n e l e c t r o n h o l e p a i r s / s e c /cm3 i s ) ;
Scilab code Exa 3.14 Mobility of minority charge carrier

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// Exa 3 . 1 4
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
v = 1/(20 * 10^ -6) ; // i n cm/ s e c
E = 10; // i n V/cm
Mu = v / E ; // i n cm2/Vs e c
disp ( Mu , The m o b i l i t y o f m i n o r i t y c h a r g e c a r r i e r i n
cm2/Vs e c i s ) ;
Scilab code Exa 3.15 Hall and electron diffusion current

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// Exa 3 . 1 5
format ( v ,8)
clc ;
clear ;
close ;
// Given d a t a
q = 1.6 * 10^ -19; // i n C
N_D = 4.5 * 10^15; // i n /cm3
del_p = 10^21;
e =10; // i n cm
A = 1; // i n mm2
A = A * 10^ -14; // cm2
l = 10; // i n cm
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Torque_p = 1; // i n m i c r o s e c
Torque_p = Torque_p * 10^ -6; // i n s e c
Torque_n = 1; // i n m i c r o s e c
Torque_n = Torque_n * 10^ -6; // i n
sec
n_i = 1.5 * 10^10; // i n /cm3
D_n = 30; // i n cm2/ s e c
D_p = 12; // i n cm2/ s e c
n_o = N_D ; // i n /cm3
p_o = ( n_i ) ^2/ n_o ; // i n /cm3
disp ( p_o , H o l e c o n c e n t r a t i o n a t t h e r m a l e q u i l i b r i u m
p e r cm3 i s ) ;
l_n = sqrt ( D_n * Torque_n ) ; // i n cm
disp ( l_n , D i f f u s i o n l e n g t h o f e l e c t r o n i n cm i s ) ;
l_p = sqrt ( D_p * Torque_p ) ; // i n cm
disp ( l_p , D i f f u s i o n l e n g t h o f h o l e s i n cm i s ) ;
x =34.6*10^ -4; // i n cm
dpBYdx = del_p * e ; // i n cm4
disp ( dpBYdx , C o n c e n t r a t i o n g r a d i e n t o f h o l e s a t
d i s t a n c e i n cm4 i s ) ;
e1 = 1.88 * 10^1; // i n cm
dnBYdx = del_p * e1 ; // i n cm4
disp ( dnBYdx , C o n c e n t r a t i o n g r a d i e n t o f e l e c t r o n s i n
p e r cm4 i s ) ;
J_P = -( q ) * D_p * dpBYdx ; // i n A/cm2
disp ( J_P , C u r r e n t d e n s i t y o f h o l e s due t o d i f f u s i o n
i n A/cm2 i s ) ;
J_n = q * D_n * dnBYdx ; // i n A/cm2
disp ( J_n , C u r r e n t d e n s i t y o f e l e c t r o n s due t o
d i f f u s i o n i n A/cm2 i s ) ;
Scilab code Exa 3.16 Energy band gap of semiconductor material used
1 // Exa 3 . 1 6
2 format ( v ,5)
3 clc ;
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clear ;
close ;
// Given d a t a
h = 6.626 * 10^ -34; // i n Js
h = h / e ; // i n eV
c = 3 * 10^8; // i n m/ s
lembda = 5490 * 10^ -10; // i n m
f = c / lembda ;
E = h * f ; // i n eV
disp (E , The e n e r g y band gap o f t h e s e m i c o n d u c t o r
m a t e r i a l i n eV i s ) ;
Scilab code Exa 3.17 Current density in Si

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// Exa 3 . 1 7
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
y2 = 6 * 10^16; // i n /cm3
y1 = 10^17; // i n /cm3
x2 = 2; // i n
m
x1 = 0; // i n
m
D_n = 35; // i n cm2/ s e c
q = 1.6 *10^ -19; // i n C
dnBYdx = ( y2 - y1 ) /(( x2 - x1 ) * 10^ -4) ;
J_n = q * D_n * dnBYdx ; // i n A/cm2
disp ( J_n , The c u r r e n t d e n s i t y i n s i l i c o n i n A/cm2
i s );
Scilab code Exa 3.18 Resistance of the bar

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// Exa 3 . 1 8
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
q = 1.6 * 10^ -19; // i n C
n_n = 5 * 10^20; // i n /m3
n_n = n_n * 10^ -6; // i n cm3
Mu_n = 0.13; // i n m2/Vs e c
Mu_n = Mu_n * 10^4; // i n cm2/Vs e c
Sigma_n = q * n_n * Mu_n ; // i n ( ohmcm ) 1
Rho = 1/ Sigma_n ; // i n
cm
l = 0.1; // i n cm
A = 100; // m 2
A = A * 10^ -8; // i n cm2
R = Rho * ( l / A ) ; // i n Ohm
R = round ( R *10^ -6) ; // i n M
disp (R , The r e s i s t a n c e o f t h e b a r i n M
i s );
Scilab code Exa 3.19 Depletion width

1 // Exa 3 . 1 9
2 format ( v ,5)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 t_d = 3; // t o t a l d e p l e t i o n i n
8 // The d e p l e t i o n w i d t h ,
9 D = t_d /9; // i n
m
10 disp (D , D e p l e t i o n w i d t h i n
m
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i s );
Scilab code Exa 3.20 Minority carrier density

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// Exa 3 . 2 0
format ( v ,8)
clc ;
clear ;
close ;
// Given d a t a
n_i = 1.5 * 10^16; // i n /m3
n_n = 5 * 10^20; // i n /m3
p_n = ( n_i ) ^2/ n_n ; // i n /m3
disp ( p_n , The m a j o r i t y c a r r i e r d e n s i t y p e r m3 i s ) ;
Scilab code Exa 3.21 Collector current density

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// Exa 3 . 2 1
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
D_n = 25; // i n cm2/ s e c
q = 1.6 * 10^ -19; // i n C
y2 = 10^14; // i n /cm3
y1 = 0; // i n /cm3
x2 = 0; // i n
m
x1 = 0.5; // i n
m
x1 = x1 * 10^ -4; // i n cm
dnBYdx = abs (( y2 - y1 ) /( x2 - x1 ) ) ; // i n /cm4
// The c o l l e c t o r c u r r e n t d e n s i t y
J_n = q * D_n * ( dnBYdx ) ; // i n /cm4
J_n = J_n * 10^ -1; // i n A/cm2
disp ( J_n , The c o l l e c t o r c u r r e n t d e n s i t y i n A/cm2 i s
);
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20
// Note : I n t h e book , t h e c a l c u l a t e d v a l u e o f dn by
dx ( 2 1 0 1 9 ) i s wrong . C o r r e c t v a l u e i s 2 1 0 1 8
s o t h e a n s w e r i n t h e book i s wrong .
Scilab code Exa 3.22 Band gap

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// Exa 3 . 2 2
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
h = 6.64 * 10^ -34; // i n Js
c = 3 * 10^8; // i n m/ s
lembda = 0.87; // i n
m
lembda = lembda * 10^ -6; // i n m
E_g = ( h * c ) / lembda ; // i n Js
E_g = E_g / e ; // i n eV
disp ( E_g , The band gap o f t h e m a t e r i a l i n eV i s ) ;
Scilab code Exa 3.23 Total energy absorbed by sample

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// Exa 3 . 2 3
format ( v ,8)
clc ;
clear ;
close ;
// Given d a t a
I_o = 10; // i n mW
e = 1.6 * 10^ -19; // i n J /eV
hv = 2; // i n eV
hv1 =1.43; // i n eV
38
11 alpha = 5 * 10^4; // i n cm1

12 l = 46; // i n
m
13 l = l * 10^ -6; // i n m
14 I_t = round ( I_o * exp ( -( alpha ) * l ) ) ; // i n mW
15 AbsorbedPower = I_o - I_t ; // i n mW
16 AbsorbedPower = AbsorbedPower *10^ -3; // i n W o r J / s
17 disp ( AbsorbedPower , The a b s o r b e d power i n w a t t o r J /
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s i s );
F = ( hv - hv1 ) / hv ; // f r a c t i o n o f e a c h p h o t o n e n e r g y
unit
EnergyConToHeat = AbsorbedPower * F ; // i n J / s
disp ( EnergyConToHeat , The amount o f e n e r g y c o n v e r t e d
to heat per second in J/ s i s : )
A = ( AbsorbedPower - EnergyConToHeat ) /( e * hv1 ) ;
disp (A , The number o f p h o t o n p e r s e c g i v e n o f f from
r e c o m b i n a t i o n e v e n t s i n photons / s i s );
Scilab code Exa 3.24 Hole current

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// Exa 3 . 2 4
format ( v ,9)
clc ;
clear ;
close ;
// Given d a t a
Mu_p = 500; // i n cm2/Vs e c
kT = 0.0259;
Toh_p = 10^ -10; // i n s e c
p_o = 10^17; // i n cm3
q = 1.6*10^ -19; // i n C
A =0.5; // i n s q u a r e m e t e r
del_p = 5 * 10^16; // i n cm3
n_i = 1.5*10^10; // i n cm3
D_p = kT * Mu_p ; // i n cm/ s
L_p = sqrt ( D_p * Toh_p ) ; // i n cm
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x = 10^ -5; // i n cm
p = p_o + del_p * %e ^( x / L_p ) ; // i n cm3
// p= n i %e ( Eip ) /kT where Eip=E i F p
Eip = log ( p / n_i ) * kT ; // i n eV
Ecp = 1.1/2 - Eip ; // v a l u e o f E cE p i n eV
Ip = q * A * D_p / L_p * del_p / %e ^( x / L_p ) ; // i n A
disp ( Ip , The h o l e c u r r e n t i n A i s : )
Qp = q * A * del_p * L_p ; // i n C
disp ( Qp , The v a l u e o f Qp i n C i s : )
40
Chapter 4
Junctions
Scilab code Exa 4.2 Tuning range

// Exa 4 . 2
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
C1 = 5*10^ -12; // i n F
C2 = 5*10^ -12; // i n F
L = 10*10^ -3; // i n H
C_Tmin = C1 * C2 /( C1 + C2 ) ; // i n F
f_omax = 1/(2* %pi * sqrt ( L * C_Tmin ) ) ; // i n Hz
C1 = 50*10^ -12; // i n F
C2 = 50*10^ -12; // i n F
C_Tmax = C1 * C2 /( C1 + C2 ) ; // i n F
f_omin = 1/(2* %pi * sqrt ( L * C_Tmax ) ) ; // i n Hz
f_omax = f_omax *10^ -6; // i n MHz
f_omin = f_omin *10^ -3; // i n kHz
disp ( f_omax , The maximum v a l u e o f r e s o n a n t f r e q u e n c y
i n MHz i s : )
19 disp ( f_omin , The minimum v a l u e o f r e s o n a n t f r e q u e n c y
i n kHz i s : )
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Scilab code Exa 4.3 Contact difference of potential

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// Exa 4 . 3
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
t = 4.4 * 10^22; // t o t a l number o f Ge atoms /cm3
n = 1 * 10^8; // number o f i m p u r i t y atoms
N_A = t / n ; // i n atoms /cm3
N_A = N_A * 10^6; // i n atoms /m3
N_D = N_A * 10^3; // i n atoms /m3
n_i = 2.5 * 10^13; // i n atoms /cm3
n_i = n_i * 10^6; // i n atoms /m3
V_T = 26; // i n mV
V_T = V_T *10^ -3; // i n V
// The c o n t a c t p o t e n t i a l f o r Ge s e m i c o n d u c t o r ,
V_J = V_T * log (( N_A * N_D ) /( n_i ) ^2) ; // i n V
disp ( V_J , The c o n t a c t p o t e n t i a l f o r Ge s e m i c o n d u c t o r
i n V i s );
// P a r t ( b )
t = 5* 10^22; // t o t a l number o f S i atoms /cm3
N_A = N_A * 10^6; // i n atoms /m3
N_D = N_A * 10^3; // i n atoms /m3
n_i = 1.5 * 10^10; // i n atoms /cm3
n_i = n_i * 10^6; // i n atoms /m3
V_T = 26; // i n mV
V_T = V_T *10^ -3; // i n V
// The c o n t a c t p o t e n t i a l f o r S i PN j u n c t i o n ,
disp ( V_J , The c o n t a c t p o t e n t i a l f o r S i PN j u n c t i o n
i n V i s );
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Scilab code Exa 4.4 Height of the potential energy barrier

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// Exa 4 . 4
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
V_T = 26; // i n mV
V_T = V_T *10^ -3; // i n V
n_i = 2.5 * 10^13;
Sigma_p = 1;
Sigma_n = 1;
Mu_n = 3800;
q = 1.6 * 10^ -19; // i n C
Mu_p = 1800;
N_A = Sigma_p /(2* q * Mu_p ) ; // i n /cm3
N_D = Sigma_n /( q * Mu_n ) ; // i n /cm3
// The h e i g h t o f t h e e n e r g y b a r r i e r f o r Ge ,
disp ( V_J , For Ge t h e h e i g h t o f t h e e n e r g y b a r r i e r i n
V i s );
// For S i pn j u c t i o n
n_i = 1.5 * 10^10;
Mu_n = 1300;
Mu_p = 500;
N_A = Sigma_p /(2* q * Mu_p ) ; // i n /cm3
N_D = Sigma_n /( q * Mu_n ) ; // i n /cm3
// The h e i g h t o f t h e e n e r g y b a r r i e r f o r S i pn
junction ,
disp ( V_J , For S i pn j u n c t i o n
the height of the
energy b a r r i e r i n V i s );
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Scilab code Exa 4.5 Forward current

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// Exa 4 . 5
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
Eta = 1;
V_T = 26; // i n mV
V_T = V_T *10^ -3; // i n V
// From e q u a t i o n o f t h e d i o d e c u r r e n t ,
I = I o ( %e
(V/ ( Eta V T ) ) 1 ) and I = ( 0 . 9 ) I o
V = log (1 -0.9) * V_T ; // v o l t a g e i n V
disp (V , The v o l t a g e i n v o l t s i s : )
// P a r t ( i i )
V1 =0.05; // i n V
V2 = -0.05; // i n V
// The r a t i o o f t h e c u r r e n t f o r a f o r w a r d b i a s t o
reverse bias
ratio = ( %e ^( V1 /( Eta * V_T ) ) -1) /( %e ^( V2 /( Eta * V_T ) ) -1)
disp ( ratio , The r a t i o o f t h e c u r r e n t f o r a f o r w a r d
b i a s to r e v e r s e b i a s i s : )
// P a r t ( i i i )
Io = 10; // i n
A
Io = Io *10^ -3; // i n mA
// For
V =0.1; // i n V
// Diode c u r r e n t
I = Io * ( %e ^( V /( Eta * V_T ) ) - 1) ; // i n mA
disp (I , For V=0.1 V , t h e v a l u e o f I i n mA i s : )
// For
V =0.2; // i n V
// Diode c u r r e n t
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30 I = Io * ( %e ^( V /( Eta * V_T ) ) - 1) ; // i n
31 disp (I , For V=0.2 V , t h e v a l u e o f I
32 // For
33 V =0.3; // i n V
34 // Diode c u r r e n t
35 I = Io * ( %e ^( V /( Eta * V_T ) ) - 1) ; // i n
36 disp ( I *10^ -3 , For V=0.3 V , t h e v a l u e
mA
i n mA i s : )
mA
of I in A i s :
)
37 disp ( From t h r e e v a l u e o f I , f o r s m a l l r i s e i n
forward voltage , the diode current i n c r e a s e
r a p i d l y )
Scilab code Exa 4.6 Anticipated factor

1 // Exa 4 . 6
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 // P a r t ( i )
8 T1 = 25; // i n
C
9 T2 = 80; // i n
C
10 // Formula I o 2= I o 1 2 ( ( T2T1 ) / 1 0 )
11 AntiFactor = 2^(( T2 - T1 ) /10) ;
12 disp ( round ( AntiFactor ) , A n t i c i p a t e d
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f a c t o r f o r Ge i s
: )
// P a r t ( i i )
T1 = 25; // i n
C
T2 = 150; // i n
C
AntiFactor = 2^(( T2 - T1 ) /10) ;
disp ( round ( AntiFactor ) , A n t i c i p a t e d f a c t o r f o r S i i s
: )
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Scilab code Exa 4.7 Leakage resistance

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// Exa 4 . 7
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
I =5; // i n
A
V =10; // i n V
T1 = 0.11; // i n
C 1
T2 = 0.07; // i n
C 1
(i)
// I o+I R=I
// d I b y d T= d I o b y d T
( ii )
// 1/ I o d I o b y d T = T1 and 1/ I d I b y d T = T2 , So
Io = T2 * I / T1 ; // i n
A
I_R = I - Io ; // i n
A
R = V / I_R ; // i n M
disp (R , The l e a k a g e r e s i s t a n c e i n M
i s : )
Scilab code Exa 4.8 Dynamic resistance

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// Exa 4 . 8
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
Eta = 1;
T = 125; // i n
C
T = T + 273; // i n K
V_T = 8.62 * 10^ -5 * 398; // i n V
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I_o = 30; // i n
A
I_o = I_o *10^ -6; // i n A
v = 0.2; // i n V
// The dynamic r e s i s t a n c e i n t h e f o r w a r d d i r e c t i o n
r_f = ( Eta * V_T ) /( I_o * %e ^( v /( Eta * V_T ) ) ) ; // i n
ohm
disp ( r_f , The dynamic r e s i s t a n c e i n t h e f o r w a r d
d i r e c t i o n i n ohm i s ) ;
// The dynamic r e s i s t a n c e i n t h e r e v e r s e d i r e c t i o n
r_r = ( Eta * V_T ) /( I_o * %e ^( - v /( Eta * V_T ) ) ) ; // i n
ohm
r_r = r_r *10^ -3; // i n k ohm
disp ( r_r , The dynamic r e s i s t a n c e i n t h e r e v e r s e
d i r e c t i o n i n kohm i s ) ;
Scilab code Exa 4.9 Barrier capacitance

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// Exa 4 . 9
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
epsilon = 16/(36 * %pi * 10^11) ; // i n F/cm
A = 1 * 10^ -2;
W = 2 * 10^ -4;
// The b a r r i e r c a p a c i t a n c e
C_T = ( epsilon * A ) / W ; // i n F
C_T = C_T *10^12; // i n pF
disp ( C_T , The b a r r i e r c a p a c i t a n c e i n pF i s ) ;
Scilab code Exa 4.10 Width of the depletion layer

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// Exa 4 . 1 0
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
A = 1; // i n mm2
A = A * 10^ -6; // i n m2
N_A = 3 * 10^20; // i n atoms /m3
q = 1.6 *10^ -19; // i n C
V_o = 0.2; // i n V
epsilon_r =16;
epsilon_o = 8.854*10^ -12; // i n F/m
epsilon = epsilon_r * epsilon_o ;
// P a r t ( a )
V = -10; // i n V
// V o V = 1 / 2 ( ( q N A ) / e p s i l o n ) W2
W = sqrt ((( V_o - V ) * 2 * epsilon ) /( q * N_A ) ) ; // m
W = W *10^6; // i n
m
disp (W , The w i d t h o f t h e d e p l e t i o n l a y e r
f o r an
a p p l i e d r e v e r s e v o l t a g e o f 10V i n
m i s );
W = W *10^ -6; // i n m
C_T1 = ( epsilon * A ) / W ; // i n F
C_T1 = C_T1 *10^12; // i n pF
// P a r t ( b )
V = -0.1; // i n V
W = W *10^6; // i n
m
f o r an
a p p l i e d r e v e r s e v o l t a g e o f 0 . 1V i n
m i s );
W = W *10^ -6; // i n m
C_T2 = ( epsilon * A ) / W ; // i n F
C_T2 = C_T2 *10^12; // i n pF
// P a r t ( c )
V =0.1; // i n V
W = W *10^6; // i n
m
f o r an
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a p p l i e d f o r a f o r w a r d b i a s o f 0 . 1V i n
m i s );
37 // P a r t ( d )
38 disp ( C_T1 , The s p a c e c h a r g e c a p a c i t a n c e f o r an
a p p l i e d r e v e r s e v o l t a g e o f 10V i n pF i s ) ;
39 disp ( C_T2 , The s p a c e c h a r g e c a p a c i t a n c e f o r an
a p p l i e d r e v e r s e v o l t a g e o f 0 . 1V i n pF i s ) ;
Scilab code Exa 4.11 Current in the junction

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// Exa 4 . 1 1
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
I_o = 1.8 * 10^ -9; // A
v = 0.6; // i n V
Eta = 2;
V_T = 26; // i n mV
V_T = V_T *10^ -3; // i n V
// The c u r r e n t i n t h e j u n c t i o n
I = I_o *( %e ^( v /( Eta * V_T ) ) ) ; // i n A
I = I *10^3; // i n mA
disp (I , The c u r r e n t i n t h e j u n c t i o n i n mA i s ) ;
Scilab code Exa 4.12 Forward biasing voltage

1 // Exa 4 . 1 2
2 format ( v ,7)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
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I_o = 2.4 * 10^ -14;

I = 1.5; // i n mA
I = I *10^ -3; // i n A
Eta = 1;
V_T = 26; // i n mV
V_T = V_T *10^ -3; // i n V
// The f o r w a r d b i a s i n g v o l t a g e a c r o s s t h e j u n c t i o n
v = log (( I + I_o ) / I_o ) * V_T ; // i n V
disp (v , The f o r w a r d b i a s i n g v o l t a g e a c r o s s t h e
j u n c t i o n i n V i s );
Scilab code Exa 4.13 Theoretical diode current

1 // Exa 4 . 1 3
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 I_o = 10; // i n nA
8 // I = I o ( ( e ( v / ( Eta V T ) ) ) 1 ) a s d i o d e
r e v e r s e b i a s e d by l a r g e v o l t a g e
9 // e ( v / ( Eta V T )<< 1 , s o n e g l e c t i n g i t
10 I = I_o * ( -1) ; // i n nA
11 disp (I , The Diode c u r r e n t i n nA i s
);
Scilab code Exa 4.14 Diode dynamic resistance

1 // Exa 4 . 1 4
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
50
is
// Given d a t a
R = 4.5; // i n ohm
I = 44.4; // i n mA
I = I *10^ -3; // i n A
V = R * I ; // i n V
Eta = 1;
V_T = 26; // i n mV
V_T = V_T *10^ -3; // i n V
// R e v e r s e s a t u r a t i o n c u r r e n t ,
I_o = I /(( %e ^( V /( Eta * V_T ) ) ) -1) ; // i n A
// Dynamic r e s i s t a n c e a t 0 . 1 V f o r w a r d b i a s
V = 0.1; // i n V
// The d i o d e dynamic r e s i s t a n c e ,
r_f = ( Eta * V_T ) /( I_o * (( %e ^( V /( Eta * V_T ) ) ) -1) ) ;
// i n ohm
20 disp ( r_f , The d i o d e dynamic r e s i s t a n c e i n
i s );
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Scilab code Exa 4.15 DC load line and operating point

1 // Exa 4 . 1 5
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 V_D = 10; // i n V
8 // V S = i R L + V D
9 V_S = V_D ; // i n V ( i R L = 0 )
10 disp ( V_S , when d i o d e i s OFF, t h e v o l t a g e
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in volts i s
: );
R_L = 250; // i n ohm
I = V_S / R_L ; // i n A
disp ( I *10^3 , when d i o d e i s ON, t h e c u r r e n t i n mA i s
);
V_D = 0:0.1:10; // i n V
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15 I = ( V_S - V_D ) / R_L *1000; // i n mA

16 plot ( V_D , I )
17 xlabel ( V D i n v o l t s ) ;
18 ylabel ( C u r r e n t i n mA )
19 title ( DC l o a d l i n e ) ;
20 disp ( DC l o a d l i n e shown i n f i g u r e )
Scilab code Exa 4.16 AC resistance of a Ge diode

// Exa 4 . 1 6
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
V = 0.25; // i n V
I_o = 1.2; // i n
A
I_o = I_o * 10^ -6; // i n A
V_T = 26; // i n mV
V_T = V_T * 10^ -3; // i n V
Eta = 1;
// The a c r e s i s t a n c e o f t h e d i o d e
r = ( Eta * V_T ) /( I_o * ( %e ^( V /( Eta * V_T ) ) ) ) ; // i n
ohm
15 disp (r , The a c r e s i s t a n c e o f t h e d i o d e i n ohm i s ) ;
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Scilab code Exa 4.17 Junction potential

1 // Exa 4 . 1 7
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
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// Given d a t a
t = 4.4 * 10^22; // i n t o t a l number o f atoms /cm3
n = 1 * 10^8; // number o f i m p u r i t y
N_A = N_A * 10^6; // i n atoms /m3
N_D = N_A * 10^3; // i n atoms /m3
V_T = 26; // i n mV
V_T = V_T * 10^ -3; // i n V
n_i = 2.5 * 10^19; // i n /cm3
// The j u n c t i o n p o t e n t i a l
disp ( V_J , The j u n c t i o n p o t e n t i a l i n V i s )
Scilab code Exa 4.18 Dynamic resistance

// Exa 4 . 1 8
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
Eta = 1;
I_o = 30; // i n MuA
I_o = I_o * 10^ -6; // i n A
v = 0.2; // i n V
K = 1.381 * 10^ -23; // i n J / d e g r e e K
T = 125; // i n
C
T = T + 273; // i n K
q = 1.6 * 10^ -19; // i n C
V_T = ( K * T ) / q ; // i n V
// The f o r w a r d dynamic r e s i s t a n c e ,
r_f = ( Eta * V_T ) /( I_o * ( %e ^( v /( Eta * V_T ) ) ) ) ; // i n
ohm
18 disp ( r_f , The f o r w a r d dynamic r e s i s t a n c e i n ohm i s )
;
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// The R e v e r s e dynamic r e s i s t a n c e
r_f1 = ( Eta * V_T ) /( I_o * ( %e ^( -( v ) /( Eta * V_T ) ) ) ) ;
// i n ohm
21 r_f1 = r_f1 *10^ -3; // i n k ohm
22 disp ( r_f1 , The R e v e r s e dynamic r e s i s t a n c e i n k
is
);
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Scilab code Exa 4.19 Width of the depletion layer

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// Exa 4 . 1 9
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
q = 1.6 * 10^ -19; // i n C
N_A = 3 * 10^20; // i n /m3
A = 1; // i n
m 2
A = A * 10^ -6; // i n m2
V = -10; // i n V
V_J = 0.25; // i n V
V_B = V_J - V ; // i n V
epsilon_o = 8.854; // i n pF/m
epsilon_o = epsilon_o * 10^ -12; // i n F/m
epsilon_r = 16;
epsilon = epsilon_o * epsilon_r ;
// The w i d t h o f d e p l e t i o n l a y e r ,
W = sqrt (( V_B * 2 * epsilon ) /( q * N_A ) ) ; // i n m
W = W *10^6; // i n
m
disp (W , The w i d t h o f d e p l e t i o n l a y e r i n
m i s );
W = W *10^ -6; // i n m
// The s p a c e c h a r g e c a p a c i t a n c e ,
C_T = ( epsilon * A ) / W ; // i n pF
C_T = C_T *10^12; // i n pF
disp ( C_T , The s p a c e c h a r g e c a p a c i t a n c e i n pF i s ) ;
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Scilab code Exa 4.20 Barrier capacitance of a Ge pn junction

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// Exa 4 . 2 0
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
W = 2 * 10^ -4; // i n cm
W = W * 10^ -2; // i n m
A = 1; // i n mm2
A = A * 10^ -6; // i n m2
epsilon_r = 16;
epsilon_o = 8.854 * 10^ -12; // i n F/m
C_T = ( epsilon * A ) / W ; // i n F
C_T = C_T *10^12; // i n pF
disp ( C_T , The b a r r i e r c a p a c i t a n c e i n pF i s ) ;
Scilab code Exa 4.21 Diameter

1 // Exa 4 . 2 1
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 C_T = 100; // i n pF
8 C_T = C_T *10^ -12; // i n F
9 epsilon_r = 12;
10 epsilon_o = 8.854 * 10^ -12; // i n F/m
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Rho_p = 5; // i n ohmcm
Rho_p = Rho_p * 10^ -2; // i n ohmm
V_j = 0.5; // i n V
V = -4.5; // i n V
Mu_p = 500; // i n cm2
Mu_p = Mu_p * 10^ -4; // i n m2
Sigma_p = 1/ Rho_p ; // i n p e r ohmm
qN_A = Sigma_p / Mu_p ;
V_B = V_j - V ;
W = sqrt (( V_B * 2 * epsilon ) / qN_A ) ; // i n m
// C T = ( e p s i l o n A) /W;
A = ( C_T * W ) / epsilon ; // i n m
D = sqrt ( A * (4/ %pi ) ) ; // i n m
D = D * 10^3; // i n mm
disp (D , The d i a m e t e r i n mm i s ) ;
Scilab code Exa 4.22 Temperature of junction

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// Exa 4 . 2 2
format ( v ,7)
clc ;
clear ;
close ;
// Given d a t a
q = 1.6 * 10^ -19; // i n C
Mu_p = 500; // i n cm2/Vs e c
Rho_p = 3.5; // i n ohmcm
Mu_n = 1500; // i n cm2/Vs e c
Rho_n = 10; // i n ohmcm
N_A = 1/( Rho_p * Mu_p * q ) ; // i n /cm3
N_D = 1/( Rho_n * Mu_n * q ) ; // i n /cm3
V_J = 0.56; // i n V
n_i = 1.5 * 10^10; // i n /cm3
V_T = V_J / log (( N_A * N_D ) /( n_i ) ^2) ; // i n V
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17 // V T = T/ 1 1 6 0 0
18 T = V_T * 11600; // i n K
19 T = T - 273; // i n
C
20 disp (T , The T e m p e r a t u r e o f
junction in
i s );
Scilab code Exa 4.23 Voltage

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// Exa 4 . 2 3
format ( v ,7)
clc ;
clear ;
close ;
// Given d a t a
V_T = 26; // i n mV
V_T = V_T * 10^ -3; // i n V
Eta = 1;
// I = 90% f o r Io , s o
IbyIo = 0.1;
// I = I o ( ( e ( v / ( Eta V T ) ) ) 1)
V = log ( IbyIo ) * V_T ; // i n V
disp (V , The r e v e r s e b i a s v o l t a g e i n v o l t s i s ) ;
Scilab code Exa 4.24 Reverse saturation current

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// Exa 4 . 2 4
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
R = 5; // i n ohm
I = 50; // i n mA
I = I *10^ -3; // i n A
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V = R * I ; // i n V
Eta = 1;
V_T = 26; // i n mV
V_T = V_T *10^ -3; // i n V
// The r e v e r s e s a t u r a t i o n c u r r e n t
I_o = I /(( %e ^( V /( Eta * V_T ) ) ) - 1) ; // i n A
I_o = I_o *10^6; // i n
A
disp ( I_o , R e v e r s e s a t u r a t i o n c u r r e n t i n
A i s );
I_o = I_o *10^ -6; // i n A
v1 = 0.2; // i n V
// The dynamic r e s i s t a n c e o f t h e d i o d e ,
r = ( Eta * V_T ) /( I_o * ( %e ^( v1 /( Eta * V_T ) ) ) ) ; // i n
ohm
22 disp (r , Dynamic r e s i s t a n c e o f t h e d i o d e i n
i s );
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Chapter 5
MOSFETs
Scilab code Exa 5.1 Current

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// Exa 5 . 1
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
V_TN = 0.7; // i n V
W = 45*10^ -4; // i n cm
L = 4; // i n
m
L = L * 10^ -4; // i n cm
t_ox = 450; // i n
t_ox = t_ox *10^ -8; // i n cm
V_GS = 1.4; // i n V
Miu_n = 700; // i n cm2/Vs
Epsilon_ox = (8.85*10^ -14) *(3.9) ; // i n F/cm
// C o n d u c t i o n p a r a m e t e r can be e x p r e s s e d as ,
k_n = ( W * Miu_n * Epsilon_ox ) /(2* L * t_ox ) ; // A/V2
k_n = k_n *10^3; // i n mA/V2
disp ( k_n , The v a l u e o f k n i n mA/V2 i s : )
k_n = k_n *10^ -3; // i n A/V2
// The d r a i n c u r r e n t ,
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22 I_D = k_n *(( V_GS - V_TN ) ^2) ; // i n A

23 I_D = I_D *10^3; // i n mA
24 disp ( I_D , The c u r r e n t i n mA i s ) ;
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26 // Note : There i s a c a l c u l a t i o n e r r o r t o f i n d t h e
v a l u e o f k n , So t h e a n s w e r i n t h e book i s wrong
Scilab code Exa 5.2 IDQ and VDSQ

1 // Exa 5 . 2
2 format ( v ,5)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 I_Don = 6; // i n mA
8 I_Don = I_Don *10^ -3; // i n A
9 V_GSon = 8; // i n V
10 V_GSth = 3; // i n V
11 V_DD = 12; // i n V
12 R_D = 2*10^3; // i n
13 k = I_Don /( V_GSon - V_GSth ) ^2; // i n A/V2
14 // I D= k [ V GSV GSth ] 2 but V GS= V DDI D R D , So
15 // I D= k (V DDI D R DV GSth ) 2 o r
16 // I D 2 R D2+ I D ( 2 R D V GSth 2R DV DD1/k ) +(
V DDV GSth ) 2
17 A = R_D ^2; // assumed
18 B = 2* R_D * V_GSth -2* R_D * V_DD -1/ k ; // assumed
19 C = ( V_DD - V_GSth ) ^2; // assumed
20 // E v a l u a t i n g t h e v a l u e o f I D
21 root = [ A B C ];
22 root = roots ( root ) ; // i n A
23 disp ( The v a l u e o f I D i s : + string ( root (1) *10^3) +
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mA o r + string ( root (2) *10^3) + mA )

I_DQ = root (2) ; // i n A
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disp ( I_DQ *10^3 , The v a l u e o f I DQ i n mA i s : )

V_DSQ = V_DD - I_DQ * R_D ; // i n V
disp ( V_DSQ , The v a l u e o f V DSQ i n v o l t s i s : )
Scilab code Exa 5.3 Designing of biasing circuit

1 // Exa 5 . 3
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 V_GS = 6; // i n V
8 I_D = 4; // i n mA
9 V_GSth = 2; // i n V
10 V_DS = V_GS ; // i n V
11 // For a good d e s i g n
12 V_DD = 2* V_DS ; // i n V
13 disp ( V_DD , The v a l u e o f V DD i n V i s )
14 R_D = ( V_DD - V_DS ) / I_D ; // i n k ohm
15 disp ( R_D , The v a l u e o f R D i n k ohm i s ) ;
16 disp ( The v e r y h i g h v a l u e f o r t h e g a t e t o d r a i n
r e s i s t a n c e i s : 10 M )
Scilab code Exa 5.4 IDQ VGSQ and VDS

1 // Exa 5 . 4
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 I_Don = 3*10^ -3;
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V_GSon = 10; // i n V
V_GSth = 5; // i n V
R2 = 18*10^6; // i n
R1 = 22*10^6; // i n
R_S =820; // i n
R_D =3*10^3; // i n
V_DD = 40; // i n V
V_G = V_DD * R2 /( R1 + R2 ) ; // i n V
k = I_Don /( V_GSon - V_GSth ) ^2; // i n A/V2
// V G= V GS+V RS= V GS+I D R S o r V GS= V GI D R S
// I D= k [ V GSV GSth ] 2 o r
// I D= k ( V GI D R DV GSth ) 2 o r
// I D 2 R D2+ I D ( 2 R D V GSth 2R DV DD1/k ) +(
V DDV GSth ) 2
A = R_S ^2; // assumed
B = 2* R_S * V_GSth -2* R_S * V_G -1/ k ; // assumed
C = ( V_G - V_GSth ) ^2; // assumed
// E v a l u a t i n g t h e v a l u e o f I D
I_D = [ A B C ]
I_D = roots ( I_D ) ; // i n A
I_D = I_D (2) ; // i n A
I_DQ = I_D ; // i n A
I_DQ = I_DQ *10^3; // i n mA
disp ( I_DQ , The v a l u e o f I DQ i n mA i s : )
I_DQ = I_DQ *10^ -3; // i n A
V_GSQ = V_G - I_D * R_S ; // i n V
disp ( V_GSQ , The v a l u e o f V GSQ i n v o l t s i s : )
V_DSQ = V_DD - I_DQ *( R_D + R_S ) ; // i n V
Scilab code Exa 5.5 IDSQ VGSQ and VDSQ

1 // Exa 5 . 5
2 format ( v ,6)
3 clc ;
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clear ;
close ;
// Given d a t a
I_D = 0 . 3 ( V GSV P ) 2 ; // g i v e n e x p r e s s i o n
V_DD = 30; // i n V
V_P = 4; // i n V
R_GS = 1.2*10^6; // i n
R_G = 1.2*10^6; // i n
Req = R_GS /( R_GS + R_G ) ; // i n
R_D = 15; // i n
// V DS= V DDI D R D ( a p p l y i n g KVL t o d r a i n c i r c u i t
)
// V GS= Req V DS= (V DDI D R D ) Req
// from g i v e n e x p r e s s i o n
// I D 2 ( R D Req ) 2 I D ( 2 R D Req (V DDReqV P )
+ 1 / 0 . 3 + (V DDReqV P ) 2 )
A = ( R_D * Req ) ^2; // assumed
B = -(2* R_D * Req *( V_DD * Req - V_P ) +1/0.3) ; // assumed
C = ( V_DD * Req - V_P ) ^2; // assumed
// E v a l u a t i n g t h e v a l u e o f I D
I_D = [ A B C ]
I_D = roots ( I_D ) ; // i n mA
I_D = I_D (2) ; // i n mA
I_DSQ = I_D ; // i n mA
disp ( I_DSQ , The v a l u e o f I DSQ i n mA i s : )
V_GS = ( V_DD - I_D * R_D ) ; // i n V
disp ( V_GS , The v a l u e o f V GS i n v o l t s i s : )
V_DS = Req * V_GS ; // i n V
disp ( V_DS , The v a l u e o f V DS i n v o l t s i s : )
Scilab code Exa 5.6 ID and VDS and region of operation

1 // Exa 5 . 6
2 format ( v ,6)
3 clc ;
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clear ;
close ;
// Given d a t a
k = 0.1; // i n mA/V2
V_T = 1; // i n V
R1 = 33; // i n k ohm
R2 = 21; // i n k ohm
V_DD = 6; // i n V
R_D = 18; // i n k ohm
V_G = ( R2 /( R2 + R1 ) ) * V_DD ; // i n V
V_S = 0; // i n V
V_GS = V_G - V_S ; // i n V
I_D = k *(( V_GS - V_T ) ^2) ; // i n mA
disp ( I_D , The v a l u e o f I D i n mA i s ) ;
V_DS = V_DD - ( I_D * R_D ) ; // i n V
disp ( V_DS , The v a l u e o f V DS i n V i s ) ;
V_DSsat = V_GS - V_T ; // i n V
disp ( V_DSsat , The v a l u e o f V DS ( s a t ) i n V i s ) ;
if V_DS > V_DSsat then
disp ( MOSFET i s i n s a t u r a t i o n r e g i o n )
end
Scilab code Exa 5.7 DC load line and operating point

1 // Exa 5 . 7
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 V_DD = 6; // i n V
8 R_D = 18; // i n kohm
9 // f o r maximum v a l u e o f I D
10 V_DS =0; // i n V
11 I_Dmax = ( V_DD - V_DS ) / R_D ; // i n mA
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12 // f o r maximum v a l u e o f V DS
13 I_D =0; // i n mA
14 V_DSmax = V_DD - I_D * R_D ; // i n V
15 V_DS = 0:0.1: V_DSmax ; // i n V
16 I_D = ( V_DD - V_DS ) / R_D ; // i n mA
17 plot ( V_DS , I_D )
18 xlabel ( V DS i n v o l t s )
19 ylabel ( I D i n mA )
20 title ( DC l o a d l i n e )
21 disp ( DC l o a d l i n e shown i n f i g u r e ) ;
22 disp ( Qp o i n t s a r e : 2 . 8 V, 0 . 1 7 8 mA )
Scilab code Exa 5.8 Region at which MOSFET ia biased

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// Exa 5 . 8
format ( v ,5)
clc ;
clear ;
close ;
// Given d a t a
R2 = 18; // i n k ohm
R1 = 33; // i n k ohm
V_DD = 6; // i n V
V_G = ( R2 /( R1 + R2 ) ) * V_DD ; // i n V
V_S = V_DD ; // i n V
V_SG = V_S - V_G ; // i n V
disp ( V_SG , The v a l u e o f V SG i n V i s ) ;
k = 0.1;
V_T = -1; // i n V
I_D = k *(( V_SG + V_T ) ^2) ; // i n mA
R_D = 3; // i n k ohm
V_SD = V_DD - ( I_D * R_D ) ; // i n V
disp ( V_SD , The v a l u e o f V SD i n V i s ) ;
V_SDsat = V_SG + V_T ; // i n V
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22 disp ( V_SDsat , The v a l u e o f V SD ( s a t ) i n V i s ) ;

23 if V_SD > V_SDsat then
24
disp ( The p MOSFET i s i n d e e d b i a s e d i n t h e
s a t u r a t i o n r e g i o n )
25 end
Scilab code Exa 5.9 IDQ and VDSQ

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// Exa 5 . 9
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
V_G = 1.5; // i n V
V_P = -3; // i n V
R_S = 750; // i n
R_D = 1800; // i n
I_DSS = 6*10^ -3; // i n A
V_DD = 18; // i n V
// V GS= V GI D R S
// I D= I DSS (1 V GS/V P ) 2 o r I DSS (1 (V GI D
R S ) /V P ) 2
// I D 2 R S2+ I D ( 2 R S ( V PV G )V P 2/ I DSS ) +(V P
V G ) 2
A = R_S ^2;
B =(2* R_S *( V_P - V_G ) - V_P ^2/ I_DSS ) ;
C =( V_P - V_G ) ^2;
// E v a l u a t i n g t h e v a l u e o f I D by u s i n g p o l y n o m i a l
I_D = [ A B C ]
I_D = I_D (2) ; // i n A
I_DQ = I_D ; // i n A
V_DS = V_DD - I_D *( R_D + R_S ) ; // i n V
V_DSQ = V_DS ; // i n V
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disp ( I_DQ *10^3 , The v a l u e o f I DQ i n mA i s : )

Scilab code Exa 5.10 Necessary value of Rs

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// Exa 5 . 1 0
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
V_GS = 4; // i n V
V_P = 2; // i n V
R2 = 10; // i n k ohm
R1 = 30; // i n k ohm
R_D = 2.5; // i n kohm
I_D = 15; // i n mA
I_D = I_D *10^ -3; // i n A
V_DD = 25; // i n V
V_G = ( V_DD / R_D ) * V_DD /( R1 + R2 ) ; // i n V
// The n e c e s s a r y v a l u e f o r R S
R_S = ( V_G - V_GS ) / I_D ; // i n ohm
disp ( R_S , The v a l u e o f R S i n ohm i s ) ;
Scilab code Exa 5.11 ID and VDS

1 // Exa 5 . 1 1
2 format ( v ,5)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 k = 0.1; // i n mA/V2
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V_T = 1; // i n V
R2 = 87*10^3; // i n
R1 = 110*10^3; // i n
R_S =2; // i n k
R_D =2; // i n k
//R D = 3 1 0 3 ; / / i n
V_DD = 6; // i n V
V_SS = 6; // i n V
V_G = ( V_DD + V_SS ) * R2 /( R1 + R2 ) ; // i n V
// V S= I D R SV SS
// V GS= V GV S= V G+V SS ( I D R S )
// I D= k [ V GSV T ] 2 = k [ ( V G+V SSV T ) ( I D R S )
]2
// ( I D R S ) 2 I D ( 2 R S ( V G+V SSV T ) +1/k )
+(
V G+V SSV T ) 2
B = -(2* R_S *( V_G + V_SS - V_T ) +1/ k ) ; // assumed
C = ( V_G + V_SS - V_T ) ^2; // assumed
I_D = [ A B C ]
I_D = I_D (2) ; // i n mA
disp ( I_D , The v a l u e o f I D i n mA i s : )
// A p p l y i n g KVL t o d r a i n s o u r c e l o o p , V DD+V SS= I D
R D+V DS+I D R S
V_DS = V_DD + V_SS - I_D * R_D - I_D * R_S ; // i n V
Scilab code Exa 5.12 Designing of NMOS CS circuit

1 // Exa 5 . 1 2
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
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k = 0.16; // i n mA/V2
V_T = 2; // i n V
I_D = 0.5; // i n mA
V_DD = 6; // i n V
V_SS = -6; // i n V
V_GS = V_T + ( sqrt ( I_D / k ) ) ; // i n V
R_S = 2; // i n k ohm
V_S = ( I_D * R_S ) - V_DD ; // i n V
V_G = V_GS + V_S ; // i n V
I = 0.1* I_D ; // i n mA
R2 = ( V_G + V_DD ) / I ; // i n k ohm
disp ( R2 , The v a l u e o f R2 i n k ohm i s ) ;
R1 = ( V_DD - V_G ) / I ; // i n k ohm
disp ( R1 , The v a l u e o f R1 i n k ohm i s ) ;
R_D = 10; // i n k ohm
V_DS = ( V_DD - V_SS ) - ( I_D *( R_S + R_D ) ) ; // i n V
if V_DS > V_DSsat then
disp ( The MOSFET i s i n s a t u r a t i o n r e g i o n )
end
// Note : The v a l u e o f R1 i s i n k ohm but i n t h e book
i t i s wrong .
Scilab code Exa 5.13 IDQ and VDS

1 // Exa 5 . 1 3
2 format ( v ,5)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 V_DD = 6; // i n V
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V_D = 3; // i n V
R_D = 10; // i n k ohm
// The v a l u e o f I DQ can be f i n d as ,
I_DQ = ( V_DD - V_D ) / R_D ; // i n mA
disp ( I_DQ , The v a l u e o f I DQ i n mA i s ) ;
V_T = 0.8; // i n V
k = 0.12; // i n mA/V2
// The v a l u e o f Ground t o S o u r c e v o l t a g e ,
V_GS = sqrt ( I_DQ / k ) + V_T ; // i n V
V_S = - V_GS ; // i n V
// The v a l u e o f D r a i n t o S o u r c e v o l t a g e ,
V_DS = V_D - V_S ; // i n V
Scilab code Exa 5.14 The region of operation

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// Exa 5 . 1 4
format ( v ,5)
clc ;
clear ;
close ;
// Given d a t a
I_D = 0.3; // i n mA
k = 0.12; // i n mA/V2
V_T = 1; // i n V
V_GS = V_T + ( sqrt ( I_D / k ) ) ; // i n V
V_S = - V_GS ; // i n V
V_DD = 6; // i n V
V_D = 3; // i n V
I_DQ = 0.3; // i n mA
R_D = ( V_DD - V_D ) / I_DQ ; // i n k ohm
disp ( R_D , The v a l u e o f R D i n k ohm i s ) ;
V_DS = V_D - V_S ; // i n V
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20 disp ( V_DSsat , The v a l u e o f V DS ( s a t ) i n V i s ) ;

21 if V_DS > V_DSsat then
22
disp ( The MOSFET i s i n s a t u r a t i o n r e g i o n )
23 end
Scilab code Exa 5.15 VDS VGS and ID

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// Exa 5 . 1 5
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
k = 0.05; // i n mA/V2
V_T = 1; // i n V
V_DD = 6; // i n V
R_S = 9.1; // i n k
// V GS= V DDI D R S
// I D= k (V DDI D R S ) 2
// I D 2 R S2 I D ( 2 V DD R S+1/k )+V DD2
B = -(2* V_DD * R_S +1/ k ) ; // assumed
C = V_DD ^2; // assumed
I_D = [ A B C ];
I_D = I_D (2) ; // i n mA
V_GS = V_DD - I_D * R_S ; // i n V
V_DS = V_GS ; // i n V
Scilab code Exa 5.16 All dc voltages

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// Exa 5 . 1 6
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
k1 = 0.01; // i n mA/V2
k2 = 0.05; // i n mA/V2
V_DD = 5; // i n V
V_T1 =1; // i n V
V_T2 =1; // i n V
// A n a l y s i s f o r Vi= 5V
Vi = 5; // i n V
// I D 1= k1 ( V GS1V T1 ) 2 and I D 2= k2 ( 2 ( V GS2
V T2 ) V DS2V DS2 2 )
// But V GS2= Vi , V DS2= Vo , V GS1= V DS1= V DDVo
//Vo 2 ( k1+k2 )Vo [ 2 k1 (V DDV T1 ) +2 k2 ( ViV T2 ) ]+
k1 (V DDV T1 ) 2
A =( k1 + k2 ) ;
B = -[2* k1 *( V_DD - V_T1 ) +2* k2 *( Vi - V_T2 ) ];
C = k1 *( V_DD - V_T1 ) ^2;
Vo = [ A B C ]
Vo = roots ( Vo ) ; // i n V
Vo = Vo (2) ; // i n V
V_GS2 = Vi ; // i n V
V_DS2 = Vo ; // i n V
V_GS1 = V_DD - Vo ; // i n V
I_D1 = k1 *( V_GS1 - V_T1 ) ^2; // i n mA
I_D2 = I_D1 ; // i n mA
disp ( P a r t ( i ) For Vi = 5 V )
disp ( Vo , The o u t p u t v o l t a g e i n v o l t s i s : )
disp ( I_D1 , The v a l u e o f I D 1 i n mA i s : )
disp ( I_D2 , The v a l u e o f I D 2 i n mA i s : )
// A n a l y s i s f o r Vi= 1 . 5V
Vi = 1.5; // i n V
// I D 2= k2 ( V GS2V T2 ) 2 and I D 1= k1 ( V GS1V T1 )
2
// But V GS2= Vi , V DS2= Vo , V GS1= V DS1= V DDVo
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36 // k2 ( ViV T2 ) 2= k1 (V DDVoV T1 ) 2 o r
37 Vo = V_DD - V_T1 - sqrt ( k2 / k1 ) *( Vi - V_T2 ) ; // i n V
38 I_D2 = k2 *( Vi - V_T2 ) ^2; // i n mA
39 I_D1 = I_D2 ; // i n mA
40 disp ( P a r t ( i i ) For Vi = 1 . 5 V )
41 disp ( Vo , The o u t p u t v o l t a g e i n v o l t s i s : )
42 disp ( I_D1 , The v a l u e o f I D 1 i n mA i s : )
43 disp ( I_D2 , The v a l u e o f I D 2 i n mA i s : )

// Exa 5 . 1 7
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
k = 0.12; // i n mA/V2
V_T = -2.5; // i n V
V_GS = 0;
I_D = k *(( V_GS - V_T ) ^2) ; // i n mA
V_DD = 6; // i n V
R_S = 4.7; // i n k ohm
V_DS = V_DD -( I_D * R_S ) ; // i n V
V_S = 0; // i n V
V_DSsat = V_S - V_T ; // i n V
if V_DS < V_DSsat then
disp ( The d e v i c e i s i n t h e non s a t u r a t i o n r e g i o n
)
21 end
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Scilab code Exa 5.18 Various voltage and current

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// Exa 5 . 1 8
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
k4 = 0.125; // i n mA/V2
k3 = k4 ; // i n mA/V2
k2 = k4 ; // i n mA/V2
k1 = 0.25; // i n mA/V2
V_T1 = 0.8; // i n V
V_T2 = V_T1 ; // i n V
V_T3 = V_T1 ; // i n V
V_T4 = V_T1 ; // i n V
V_SS = -5; // i n V
V_DD = 5; // i n V
R_D = 10; // i n k ohm
// R e q u i r e d f o r m u l a , V GS3 = ( ( s q r t ( k4 / k3 ) (V SS
V T4 ) )+V T3 ) /(1+ s q r t ( k4 / k3 ) )
V_GS3 = (( sqrt ( k4 / k3 ) * ( - V_SS - V_T4 ) ) + V_T3 ) /(1+
sqrt ( k4 / k3 ) ) ; // i n V
// C a l c u l a t i o n t o e v a l u a t e t h e v a l u e o f I Q ,
I_Q = k2 *(( V_GS3 - V_T2 ) ^2) ; // i n mA
I_D1 = I_Q ; // i n mA
// The v a l u e o f V GS1 ,
V_GS1 = V_T1 + ( sqrt ( I_D1 / k1 ) ) ; // i n V
disp ( V_GS1 , The v a l u e o f V GS1 i n V i s ) ;
// The v a l u e o f V DS2 ,
V_DS2 = ( - V_SS - V_GS1 ) ; // i n V
disp ( V_DS2 , The v a l u e o f V DS2 i n V i s ) ;
// The v a l u e o f V DS1 ,
V_DS1 = V_DD - ( I_Q * R_D ) - ( V_SS + V_DS2 ) ; // i n V
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disp ( V_DS1 , The v a l u e o f V DS1 i n V i s ) ;
Scilab code Exa 5.19 Q point

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// Exa 5 . 1 9
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
R2 = 20; // i n k ohm
R1 = 30; // i n k ohm
R_D = 20; // i n k ohm
R_D = R_D *10^3; // i n ohm
V_DD = 5; // i n V
V_G = ( R2 /( R1 + R2 ) ) * V_DD ; // i n V
V_S = 0; // i n V
V_GS = V_G ; // i n V
k = 100*10^ -6; // i n A/V2
V_T = 1; // i n V
// The v a l u e o f I DQ ,
I_DQ = k *(( V_GS - V_T ) ^2) ; // i n A
I_DQ = I_DQ * 10^6; // i n
A
A i s );
disp ( I_DQ , The v a l u e o f I DQ i n
I_DQ = I_DQ * 10^ -6; // i n A
// The v a l u e o f V DSQ ,
V_DSQ = V_DD - ( I_DQ * R_D ) ; // i n V
disp ( V_DSQ , The v a l u e o f V DSQ i n V i s ) ;
Scilab code Exa 5.20 IDQ VGSQ and VD

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// Exa 5 . 2 0
format ( v ,6)
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clc ;
clear ;
close ;
// Given d a t a
V_P = -8; // i n V
R_S = 2.4; // i n k
//R D= 1 8 0 0 ; / / i n
I_DSS = 8; // i n mA
V_DD = 20; // i n V
R_D = 6.2; // i n k
// V GS= I D R S
// I D= I DSS (1 V GS/V P ) 2 o r I DSS (1( I D R S ) /
V P ) 2
// I D 2 R S2+ I D ( 2 R S ( V PV G )V P 2/ I DSS ) +(V P
) 2
A = R_S ^2
B =(2* R_S *( V_P ) - V_P ^2/ I_DSS )
C =( V_P ) ^2
I_D = [ A B C ]
// E v a l u a t i o n f o I D u s i n g by p o l y n o m i a l method
I_D = I_D (2) ; // i n mA
I_DQ = I_D ; // i n mA
// The v a l u e o f V GSQ
V_GSQ = - I_D * R_S ; // i n V
disp ( V_GSQ , The v a l u e o f V GSQ i n v o l t s )
// The v a l u e o f V D ,
V_D = V_DD - I_D * R_D ; // i n V
disp ( V_D , The v a l u e o f V D i n v o l t s i s : )
Scilab code Exa 5.21 ID VD VS and VG

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// Exa 5 . 2 1
format ( v ,6)
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clc ;
clear ;
close ;
// Given d a t a
k = 75*10^ -3; // i n mA/V2
Vth = -0.8; // i n V
R2 = 100; // i n k ohm
R1 = 100; // i n k ohm
R_S = 6; // i n k
R_D = 3; // i n k
V_SS = 10; // i n V
V_G = ( R2 /( R1 + R2 ) ) * V_SS ; // i n V
I_D = poly (0 , I D ) ;
V_S = V_SS - I_D * R_S ; // i n V
V_GS = V_G - V_S ; // i n V
I_D = I_D - k *( V_GS - Vth ) ^2;
// For I D ( 1 ) , t h e V DS w i l l be p o s i t i v e , s o
discarding this
I_D = I_D (2) ; // i n mA
V_DS = - V_SS + I_D *( R_D + R_S ) ; // i n V
V_D = I_D * R_D ; // i n V
V_S = I_D * R_S ; // i n V
disp ( V_S , The v a l u e o f V S i n v o l t s i s : )
Scilab code Exa 5.22 Value of RD

1 // Exa 5 . 2 2
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
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// Given d a t a
V_T = 1; // i n V
k = 160*10^ -6; // i n A/V2
I_DQ = 160*10^ -6; // i n A
V_GS = V_T + sqrt ( I_DQ / k ) ; // i n V
V_DD = 5; // i n V
V_DSQ = 3; // i n V
R_D = ( V_DD - V_DSQ ) /( I_DQ ) ; // i n ohm
R_D = R_D * 10^ -3; // i n k ohm
disp ( R_D , The v a l u e o f R D i n k ohm i s ) ;
Scilab code Exa 5.23 Q point

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// Exa 5 . 2 3
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
V_DD = 12; // i n V
V_T = 2; // i n V
kn = 0.5; // i n mA/V2
R1 = 2.2; // i n M ohm
R2 = 1.8; // i n M ohm
R_S = 1.5; // i n k
R_D = 3.9; // i n k
V_G = ( R2 /( R1 + R2 ) ) * V_DD ; // i n V
I_D = poly (0 , I D )
V_GS = V_G - I_D * R_S ; // V
// E v a l u a t i o n t h e v a l u e o f I D by u s i n g p o l y n o m i a l
method
I_D = I_D - kn *( V_GS - V_T ) ^2; // i n mA
I_D = I_D (2) ; // i n mA
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// E v a l u a t i o n t h e v a l u e o f V DSQ ,
V_DSQ = V_DD - I_D *( R_D + R_S ) ; // i n V
V_GS = V_G - I_D * R_S ; // V
disp ( The v a l u e o f V DS ( + string ( V_DSQ ) + V ) i s
g r e a t e r than the v a l u e o f )
29 disp ( V DSsat ( + string ( V_DSsat ) + V ) , So t h e
MOSFET i s i n s a t u r a t i o n r e g i o n )
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Scilab code Exa 5.24 IDSQ VGSQ and VDSQ

// Exa 5 . 2 4
format ( v ,5)
clc ;
clear ;
close ;
// Given d a t a
kn = 0.5; // i n mA/V2
V_T = 1; // i n V
R2 = 40; // i n k ohm
R1 = 60; // i n k ohm
R_S = 1; // i n k ohm
R_D = 2; // i n k ohm
V_DD = 5; // i n V
V_SS = -5; // i n V
V_R2 = ( R2 /( R2 + R1 ) ) *( V_DD - V_SS ) ; // i n V
V_G = V_R2 - V_DD ; // i n V
I_D = poly (0 , I D ) ;
V_S = I_D * R_S + V_SS ; // i n V
V_GS = V_G - V_S ; // i n V
method ,
21 I_D = I_D - kn *( V_GS - V_T ) ^2; // i n mA
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22 I_D = roots ( I_D ) ; // i n mA

23 // D i s c a r d i n g I D ( 1 ) , a s i t
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w i l l r e s u l t in a
n e g a t i v e V DS
I_D = I_D (2) ; // i n mA
V_S = I_D * R_S + V_SS ; // i n V
V_GS = V_G - V_S ; // i n V
// The v a l u e o f V DSQ ,
V_DSQ = V_DD - V_SS - I_D *( R_D + R_S ) ; // i n V
Scilab code Exa 5.25 ID VDS VGS and Av

// Exa 5 . 2 5
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
R_S1 = 100*10^ -3; // i n k ohm
R_S2 = 100*10^ -3; // i n k ohm
R_S = R_S1 + R_S2 ; // i n k ohm
R_D = 1.8; // i n k ohm
I_DSS = 12; // i n mA
Vp = -3.5; // i n V
V_DD = 22; // i n V
rd = 25; // i n k ohm
R_L = 47; // i n k ohm
I_D = poly (0 , I D ) ;
V_GS = - I_D * R_S ; // i n V
method ,
19 I_D = I_D - I_DSS *(1 - V_GS / Vp ) ^2; // i n mA
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20 I_D = roots ( I_D ) ; // i n mA

21 // D i s c a r d i n g I D ( 1 ) , a s i t
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will give a negative

r e s u l t V DS
I_D = I_D (2) ; // i n mA
// The v a l u e o f V GS ,
V_GS = - I_D * R_S ; // i n V
// The v a l u e o f V DS ,
gmo = -2* I_DSS / Vp ; // i n mS
gm = gmo *(1 - V_GS / Vp ) ; // i n mS
miu = gm * rd ;
// The v a l u e o f Av ,
Av = - miu * R_D * R_L /( R_D + R_L ) /( rd + R_D * R_L /( R_D + R_L ) +(1+
miu ) * R_S1 ) ;
disp ( Av , The v a l u e o f Av i s : )
Scilab code Exa 5.26 VGS ID and VDS

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// Exa 5 . 2 6
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
V_T = 1; // i n V
k = 0.5; // i n mA/V2
R2 = 40; // i n k ohm
R1 = 60; // i n k ohm
R_S = 1; // i n k ohm
R_D = 2; // i n k ohm
V_DD = 5; // i n V
V_G = ( R2 /( R2 + R1 ) ) * V_DD ; // i n V
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15 I_D = poly (0 , I D ) ;
16 V_GS = V_G - I_D * R_S ; // i n V
17 // E v a l u a t i o n t h e v a l u e o f I D by u s i n g p o l y n o m i a l
method ,
18 I_D = I_D - k *( V_GS - V_T ) ^2;
19 I_D = roots ( I_D ) ; // i n mA
20 // For I D ( 1 ) , V DS w i l l be n e g a t i v e
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, so d i s c a r d i n g
it
I_D = I_D (2) ; // i n mA
// The v a l u e o f V GS ,
V_GS = V_G - I_D * R_S ; // i n V
Scilab code Exa 5.27 Drain current and source to drain voltage
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// Exa 5 . 2 7
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
R_D = 7.5; // i n k ohm
V_T = -0.8; // i n V
k = 0.2; // i n mA/V2
R2 = 50; // i n ohm
R1 = 50; // i n ohm
V_DD = 5; // i n V
V_S = 5; // i n V
V_G = ( R2 /( R2 + R1 ) ) * V_DD ; // i n V
V_GS = V_G - V_S ; // i n V
I_D = k *(( V_GS - V_T ) ^2) ; // i n mA
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disp ( I_D , D r a i n c u r r e n t i n mA i s ) ;
V_SD = V_DD - ( I_D * R_D ) ; // i n V
disp ( V_SD , S o u r c e t o d r a i n v o l t a g e i n V i s ) ;
Scilab code Exa 5.28 IDQ VGSQ VD and VS

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// Exa 5 . 2 8
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
I_Don = 5*10^ -3; // i n A
V_GSon = 6; // i n V
V_GSth = 3; // i n V
k = I_Don /( V_GSon - V_GSth ) ^2; // i n A/V2
R2 = 6.8; // i n M ohm
R1 = 10; // i n M ohm
R_S = 750; // i n ohm
R_D = 2.2*10^3; // i n ohm
V_DD = 24; // i n V
R_S = 750; // i n ohm
// A p p l y i n g KVL f o r i n p u t c i r c u i t
V_G = R2 * V_DD /( R1 + R2 ) ; // i n V
I_D = poly (0 , I D ) ;
V_GS = V_G - I_D * R_S ; // i n V
I_D = I_D - k *( V_GS - V_GSth ) ^2;
I_D = I_D (2) ; // i n A
I_DQ = I_D ; // i n A
V_GS = V_G - I_D * R_S ; // i n V
V_GSQ = V_GS ; // i n V
V_DSQ = V_DD - I_DQ *( R_D + R_S ) ; // i n V
I_D = I_D *10^3; // i n mA
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disp ( V_GSQ , The v a l u e o f V GSQ i n v o l t s i s : )

Scilab code Exa 5.29 VDD RD and VGS

1 // Exa 5 . 2 9
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 I_Don = 4*10^ -3; // i n A
8 V_GSon = 6; // i n V
9 V_GSth = 3; // i n V
10 V_DS = 6; // i n V
11 I_D = I_Don ; // i n A
12 k = I_Don /(( V_GSon - V_GSth ) ^2) ; // i n A/V2
13 V_GS = poly (0 , V GS )
14 // E v a l u a t i o n t h e v a l u e o f V GS by u s i n g p o l y n o m i a l
method ,
15 V_GS = I_D - k *( V_GS - V_GSth ) ^2;
16 V_GS = roots ( V_GS ) ; // i n V
17 V_GS = V_GS (1) ; // i n V
18 V_DD = 2* V_DS ; // i n V
19 // V GS= V DDI D R D
20 // D r a i n r e s i s t a n c e ,
21 R_D = ( V_DD - V_GS ) / I_D ; // i n ohm
22 R_D = R_D *10^ -3; // i n k ohm
23 disp ( V_GS , The v a l u e o f V GS i n v o l t s i s : )
24 disp ( V_DD , The v a l u e o f V DD i n v o l t s i s : )
i s : )
25 disp ( R_D , The v a l u e o f R D i n k
Scilab code Exa 5.30 Value of ID

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// Exa 5 . 3 0
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
I_DD = 20; // i n mA
R2 = 10; // i n k ohm
R1 = 30; // i n k ohm
R_S = 1.2; // i n k ohm
R_D = 500*10^ -3; // i n k ohm
V_DD = 12; // i n V
Vp = -6; // i n V
V_G = ( R2 /( R2 + R1 ) ) * V_DD ; // i n V
I_D = poly (0 , I D )
V_GS = V_G - I_D * R_S ; // i n V
method ,
I_D = I_D - I_DD *(1 - V_GS / Vp ) ^2;
// For I D ( 1 ) , V DS w i l l be n e g a t i v e , s o d i s c a r d i n g
it
I_D = I_D (2) ; // i n mA
V_D = V_DD - I_D * R_D ; // i n V
// The v a l u e o f V S ,
V_S = V_D - V_DS ; // i n V
disp ( V_S , The v a l u e o f V S i n v o l t s i s : )
Scilab code Exa 5.31 Voltages at all nodes

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35
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// Exa 5 . 3 1
format ( v ,5)
clc ;
clear ;
close ;
// Given d a t a
V_DD = 5; // i n V
V_T = 1; // i n V
k = 1; // i n mA/V2
R1 = 1; // i n M ohm
R2 = 1; // i n M ohm
R_S = 2; // i n k ohm
R_D = 2; // i n k ohm
// C a l c u l a t i o n o f I 1
I1 = V_DD /( R1 + R2 ) ; // i n A
disp ( I1 , The v a l u e o f I 1 i n
A i s : )
// The v a l u e o f V A ,
V_A = ( R2 /( R2 + R1 ) ) * V_DD ; // i n V
disp ( V_A , The v a l u e o f V A and V G i n v o l t s i s : )
I_D = poly (0 , I D ) ;
V_C = I_D * R_S ; // i n V
V_GS = V_A - V_C ; // i n V
method ,
I_D = I_D - k *( V_GS - V_T ) ^2;
// For I D ( 1 ) , V DS w i l l be n e g a t i v e , s o d i s c a r d i n g
it
I_D = I_D (2) ; // i n mA
// The v a l u e o f V B ,
V_B = V_DD - I_D * R_D ; // i n V
// The v a l u e o f V C ,
V_C = I_D * R_S ; // i n V
V_DS = V_B - V_C ; // i n V
disp ( V_B , The v a l u e o f V B i n v o l t s i s : )
disp ( V_C , The v a l u e o f V C i n v o l t s i s : )
86
37
38
39

// Note : I n t h e book , t h e c a l c u l a t e d v a l u e s a r e n o t
a c c u r a t e , t h i s i s why t h e a n s w e r i n t h e book i s
wrong .
Scilab code Exa 5.32 Av Ri Ro and Rodesh

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// Exa 5 . 3 2
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
I_DSS = 12; // i n mA
I_DSS = I_DSS *10^ -3; // i n A
V_P = -3; // i n V
r_d = 45; // i n k ohm
r_d = r_d *10^3; // i n ohm
g_m = I_DSS / abs ( V_P ) ; // i n S
// P a r t ( i )
R1 = 91; // i n M ohm
R1 = R1 *10^6; // i n ohm
R2 = 10; // i n M ohm
R2 = R2 *10^6; // i n ohm
// C a l c u l a t i o n t o f i n d t h e v a l u e o f Ri
Ri = R1 * R2 /( R1 + R2 ) ; // i n ohm
Ri = Ri *10^ -6; // i n M ohm
disp ( Ri , The v a l u e o f Ri i n Mohm i s : )
// P a r t ( i i )
R_S = 1.1; // i n k ohm
R_S = R_S * 10^3; // i n ohm
// The v a l u e o f R o ,
R_o = ( R_S *1/ g_m ) /( R_S +1/ g_m ) ; // i n ohm
disp ( R_o , The v a l u e o f R C i n ohm i s : )
87
28 // P a r t ( i i i )
29 // The v a l u e o f R d e s h o
30 R_desh_o = R_o * r_d /( R_o + r_d ) ; // i n ohm
31 disp ( R_desh_o , The v a l u e o f R o i n ohm i s : ) ;
32 // P a r t ( i v )
33 // The v o l t a g e g a i n can be f i n d as ,
34 Av = g_m *( R_S * r_d /( R_S + r_d ) ) /(1+ g_m *( R_S * r_d /( R_S + r_d
)));
35 disp ( Av , The v a l u e o f Av i s : )
Scilab code Exa 5.34 Current flow through M1 MOSFET

1 // Exa 5 . 3 4
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 V_S2 = -2; // i n V
8 V_GS2 = - V_S2 ; // i n V
9 I_DS2 = ( V_GS2 -1) ^2; // i n mA
10 I = 2; // i n mA
11 // The c u r r e n t f l o w t h r o u g h M1 MOSFET,
12 I_DS1 = I - I_DS2 ; // i n mA
13 disp ( I_DS1 , The c u r r e n t f l o w t h r o u g h M1 MOSFET i n mA
i s );
Scilab code Exa 5.35 Value of R and VD

1 // Exa 5 . 3 5
2 format ( v ,6)
3 clc ;
4 clear ;
88
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close ;
// Given d a t a
V_DD = 10; // i n V
I_D = 0.4*10^3; // i n A
W = 100; // i n
m
L = 10; // i n
m
uACox = 20; // i n A/V2
Vt = 2; // i n V
R = poly (0 , R )
V_GS = V_DD - I_D * R ; // i n V
// E v a l u a t i o n t h e v a l u e o f R by u s i n g p o l y n o m i a l
method ,
R = I_D -1/2* uACox * W / L *( V_GS - Vt ) ^2;
R = roots ( R ) ; // i n Mohm
// For R( 1 ) , V DS w i l l be z e r o , s o d i s c a r d i n g i t
R = R (2) ; // i n Mohm
R = R *10^3; // i n k ohm
disp (R , The v a l u e o f R i n k
i s : )
R = R *10^ -3; // i n ohm
V_D = V_DD - I_D * R ; // i n V

1 // Exa 5 . 3 6
2 format ( v ,5)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 V_GSth = 2; // i n V
8 k = 2*10^ -4; // i n A/V2
9 V_DD = 12; // i n V
10 R_D = 5*10^3; // i n ohm
89
11 I_D = poly (0 , I D ) ;
12 V_DS = V_DD - I_D * R_D ; // i n V
13 // E v a l u a t i o n t h e v a l u e o f I D by u s i n g p o l y n o m i a l
method ,
14 I_D = I_D - k *( V_DS - V_GSth ) ^2;
15 I_D = roots ( I_D ) ; // i n A
16 // For I D ( 1 ) , V DS w i l l be n e g a t i v e , s o d i s c a r d i n g
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it
I_D = I_D (2) ; // i n A
V_DS = V_DD - I_D * R_D ; // i n V
I_D = I_D *10^3; // i n mA
90
Chapter 6
Bipolar Junction Transistor
Scilab code Exa 6.1 Common base dc current gain

1 // Exa 6 . 1
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 I_C = 5.10; // i n mA
8 I_E = 5.18; // i n mA
9 alpha = I_C / I_E ;
10 alpha_dc = alpha ;
11 disp ( alpha_dc , The commonb a s e d . c .
: )
Scilab code Exa 6.2 Base current

1 // Exa 6 . 2
2 format ( v ,6)
3 clc ;
91
current gain i s
4 clear ;
5 close ;
6 // Given d a t a
7 alpha = 0.987;
8 I_E = 10; // i n mA
9 // Formula a l p h a= I C / I E ;
10 I_C = alpha * I_E ; // i n mA
11 I_B = I_E - I_C ; // i n mA
12 disp ( I_B , The b a s e c u r r e n t i n mA i s
: )
Scilab code Exa 6.3 Value of IC and IB

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// Exa 6 . 3
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
alpha = 0.987;
I_E = 10; // i n mA
// Formula a l p h a= I C / I E ;
I_C = alpha * I_E ; // i n mA
I_B = I_E - I_C ; // i n mA
disp ( I_C , The c o l l e c t o r c u r r e n t i n mA i s : )
disp ( I_B , The b a s e c u r r e n t i n mA i s : )
Scilab code Exa 6.4 Collector and base current

1 // Exa 6 . 4
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
92
6 // Given d a t a
7 Beta = 100;
8 I_E = 10; // i n mA
9 alpha = Beta /(1+ Beta ) ;
10 disp ( alpha , The v a l u e o f a l p h a i s : )
11 // Formula a l p h a= I C / I E ;
12 I_C = alpha * I_E ; // i n mA
13 I_B = I_E - I_C ; // i n mA
14 disp ( I_C , The c o l l e c t o r c u r r e n t i n mA i s : )
15 disp ( I_B , The b a s e c u r r e n t i n mA i s : )
16
17 // Note : The c a l c u l a t e d v a l u e o f a l p h a i n t h e book
i s wrong , due t o t h i s t h e a n s w e r i n t h e book i s

wrong .
Scilab code Exa 6.5 Value of alpha and bita

1 // Exa 6 . 5
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 alpha = 0.950;
8 Beta = alpha /(1 - alpha ) ;
9 disp ( Beta , For a l p h a = 0 . 9 5 0 , t h e v a l u e o f b e t a
10
11
12
is :
)
Beta = 100;
alpha = Beta /(1+ Beta ) ;
disp ( alpha , For b e t a = 1 0 0 , t h e v a l u e o f a l p h a i s :
)

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// Exa 6 . 6
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
I_E = 10; // i n mA
Beta = 100;
// Formula a l p h a= I C / I E ;
I_C = alpha * I_E ; // i n mA
I_B = I_E - I_C ; // i n mA
disp ( I_B , The b a s e c u r r e n t i n mA i s : )
// Note : I n t h e book t h e c a l c u l a t e d v a l u e o f I B i s
n o t c o r r e c t , s o t h e a n s w e r i n t h e book i s n o t
accurate
Scilab code Exa 6.7 DC load line

1 // Exa 6 . 7
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 V_CC = 12; // i n V
8 R_C = 3; // i n k
9 V_CE = 0:0.1:12; // i n V
10 I_C = ( V_CC - V_CE ) / R_C ; // i n mA
11 plot ( V_CE , I_C ) ;
12 xlabel ( V CE i n v o l t s )
13 ylabel ( I C i n mA )
14 title ( DC l o a d l i n e )
94
15
disp ( DC l o a d l i n e shown i n f i g u r e . )
Scilab code Exa 6.8 Operating point and stability factor

1 // Exa 6 . 8
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 bita = 100;
8 V_CC = 6; // i n V
9 V_BE = 0.7; // i n V
10 R_B = 530*10^3; // i n
11 R_C = 2*10^3; // i n
12 // A p p l y i n g KVL f o r i n p u t s i d e , V CC= I B R B+V BE
or
13 I_B = ( V_CC - V_BE ) / R_B ; // i n A
14 I_C = bita * I_B ; // i n A
15 // A p p l y i n g KVL t o o u t p u t s i d e ,
16 V_CE = V_CC - I_C * R_C ; // i n V
17 S = 1+ bita ;
18 disp ( The o p e r a t i n g p o i n t i s : + string ( V_CE ) + V,
+ string ( I_C *10^3) + mA )

19 disp (S , The s t a b i l i t y f a c t o r i s : )

1 // Exa 6 . 9
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
95
6 // Given d a t a
7 Beta = 75;
8 V_CC = 20; // i n V
9 V_BE = 0; // i n V
10 R_B = 200*10^3; // i n
11 R_C = 800; // i n
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or
I_B = ( V_CC - V_BE ) / R_B ; // i n A
I_B = I_B *10^6; // i n
A
disp ( I_B , The b a s e c u r r e n t i n
A i s : )
I_B = I_B *10^ -6; // i n A
// The c o l l e c t o r c u r r e n t ,
I_C = Beta * I_B ; // i n A
I_C = I_C *10^3; // i n mA
I_C = I_C *10^ -3; // i n A
// A p p l y i n g KVL t o o u t p u t s i d e , t h e c o l l e c t o r t o
emitter voltage
V_CE = V_CC - I_C * R_C ; // i n V
disp ( V_CE , The c o l l e c t o r t o e m i t t e r v o l t a g e i n V i s
: )
// The s t a b i l i t y f a c t o r ,
S = 1+ Beta ;
disp (S , The s t a b i l i t y f a c t o r i s : )
Scilab code Exa 6.10 Base resistor and stability factor

1 // Exa 6 . 1 0
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 Beta = 100;
96
8 V_CC = 12; // i n V
9 V_BE = 0; // i n V
10 I_B = 0.3*10^ -3; // i n A
11 R_C = 300; // i n
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or
R_B = ( V_CC - V_BE ) / I_B ; // i n
R_B = R_B *10^ -3; // i n k ohm
disp ( R_B , The v a l u e o f b a s e
// The c o l l e c t o r t o e m i t t e r
V_CE = V_CC - I_C * R_C ; // i n V
disp ( V_CE , The c o l l e c t o r t o
: )
S = 1+ Beta ;
disp (S , The s t a b i l i t y f a c t o r
r e s i s t o r in
emitter voltage in V i s
i s : )
// Exa 6 . 1 1
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
R_B = 400*10^3; // i n
R_C = 2*10^3; // i n
R_E = 1*10^3; // i n
V_CC = 20; // i n V
Beta = 100;
// Base c u r r e n t can be e v a l u a t e d as ,
I_B = V_CC /( R_B + Beta * R_E ) ; // i n A
// C o l l e c t o r c u r r e n t
97
i s : )
voltage
Scilab code Exa 6.11 DC bias voltage

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16 // The c o l l e c t o r t o e m i t t e r v o l t a g e
17 V_CE = V_CC - I_C *( R_C + R_E ) ; // i n V
18 I_B = I_B *10^3; // i n mA
19 I_C = I_C *10^3; // i n mA
20 disp ( I_B , The v a l u e o f b a s e c u r r e n t i n mA i s : )
21 disp ( I_C , The v a l u e o f c o l l e c t o r c u r r e n t i n mA i s :
22
)
: )
Scilab code Exa 6.12 Collector current collector to emitter voltage and
stability factor
// Exa 6 . 1 2
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
R_B = 180*10^3; // i n
R_C = 820; // i n
R_E = 200; // i n
V_CC = 25; // i n V
V_BE = 0.7; // i n V
Beta = 80;
// C o l l e c t o r c u r r e n t can be f i n d as ,
I_C = ( V_CC - V_BE ) /( R_E + R_B / Beta ) ; // i n A
// The c o l l e c t o r t o e m i t t e r v o l t a g e
V_CE = V_CC - I_C *( R_C + R_E ) ; // i n V
I_C = I_C *10^3; // i n mA
disp ( I_C , The v a l u e o f c o l l e c t o r c u r r e n t i n mA i s :
)
19 disp ( V_CE , The c o l l e c t o r t o e m i t t e r v o l t a g e i n V i s
: )
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// Note : The c a l c u l a t e d v a l u e o f V CE i n t h e book i s

wrong .
Scilab code Exa 6.13 collector current and stability factor

// Exa 6 . 1 3
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
R_B = 200*10^3; // i n
R_C = 20*10^3; // i n
V_CC = 20; // i n V
V_BE = 0.7; // i n V
Beta = 100;
// The v a l u e o f c o l l e c t o r c u r r e n t
I_C = ( V_CC - V_BE ) /( R_C + R_B / Beta ) ; // i n A
V_CE = V_CC - I_C * R_C ; // i n V
// The s t a b i l i t y f a c t o r
S = (1+ Beta ) /(1+ Beta *( R_C /( R_C + R_B ) ) ) ;
I_C = I_C *10^3; // i n mA
)
: )
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Scilab code Exa 6.14 IB IC VCE and stability

1
2
// Exa 6 . 1 4
format ( v ,6)
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clc ;
clear ;
close ;
// Given d a t a
R_B = 100*10^3; // i n
R_C = 10*10^3; // i n
V_CC = 10; // i n V
V_BE = 0; // i n V
Beta = 100;
// Base c u r r e n t can be e v a l u a t e d as ,
I_B = ( V_CC - V_BE ) /( R_B + R_C * Beta ) ; // i n A
// The v a l u e o f c o l l e c t o r c u r r e n t
V_CE = V_CC - I_C * R_C ; // i n V
S = (1+ Beta ) /(1+ Beta *( R_C /( R_C + R_B ) ) ) ;
I_C = I_C *10^3; // i n mA
)
: )
24
25
// Note : The c a l c u l a t e d v a l u e o f S i n t h e book i s

wrong .
Scilab code Exa 6.15 Emitter and collector current and VCE
1 // Exa 6 . 1 5
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
100
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R_B = 50*10^3; // i n
R_C = 1*10^3; // i n
R_E = 5*10^3; // i n
V_CC = 10; // i n V
V_EE = 10; // i n V
V_BE = 0.7; // i n V
V_E = - V_BE ; // i n V
// The v a l u e o f e m i t t e r c u r r e n t
I_E = ( V_EE - V_BE ) / R_E ; // i n A
// The c o l l e c t o r c u r r e n t w i l l be e q u a l t o e m i t t e r
current
I_C = I_E ; // i n A
V_CE = V_CC - I_C * R_C ; // i n V
V_CE = V_CE - V_E ; // i n V
I_C = I_C *10^3; // i n mA
I_E = I_E *10^3; // i n mA
disp ( I_E , The v a l u e o f e m i t t e r c u r r e n t i n mA i s : )
)
: )
Scilab code Exa 6.16 Change in Q point

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10
// Exa 6 . 1 6
format ( v ,5)
clc ;
clear ;
close ;
// Given d a t a
R_B = 10*10^3; // i n
R_C = 5*10^3; // i n
R_E = 10*10^3; // i n
Beta =50;
101
V_CC = 20; // i n V
V_EE = 20; // i n V
V_BE = 0.7; // i n V
V_E = - V_BE ; // i n V
// The v a l u e o f I E 1 ,
I_E1 = ( V_EE - V_BE ) /( R_E + R_B / Beta ) ; // i n A
I_C1 = I_E1 ; // i n A
V_C = V_CC - I_C1 * R_C ; // i n V
V_CE1 = V_C - V_E ; // i n V
Beta = 100;
V_BE = 0.6; // i n V
V_E = - V_BE ; // i n V
// The v a l u e o f I E 2 ,
I_E2 = ( V_EE - V_BE ) /( R_E + R_B / Beta ) ; // i n A
I_C2 = I_E2 ; // i n A
V_C = V_CC - I_C2 * R_C ; // i n V
V_CE2 = V_C - V_E ; // i n V
// The c h a n g e i n c o l l e c t o r c u r r e n t
delta_IC = ( I_C2 - I_C1 ) / I_C1 *100; // i n %
// The c h a n g e i n c o l l e c t o r t o e m i t t e r v o l t a g e
delta_V_CE = ( V_CE1 - V_CE2 ) / V_CE1 *100; // i n %
disp ( delta_IC , The c h a n g e i n c o l l e c t o r c u r r e n t i n %
i s : )
33 disp ( delta_V_CE , The c h a n g e i n c o l l e c t o r t o e m i t t e r
v o l t a g e in % i s : )
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Scilab code Exa 6.18 Value of alphaDC and emitter current

1 // Exa 6 . 1 8
2 format ( v ,6)
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 I_CBO = 3; // i n
A
102
8 I_CBO = I_CBO *10^ -3; // i n mA

9 I_C = 15; // i n mA
10 // But i t i s g i v e n t h a t I C= 9 9 . 5% o f I E , SO
11 I_E = I_C /99.5*100; // i n mA
12 alpha_dc = I_C / I_E ;
13 disp ( alpha_dc , The v a l u e o f a l p h a d c i s : )
14 disp ( I_E , The v a l u e o f I E i n mA i s : )
Scilab code Exa 6.19 IC and IB

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// Exa 6 . 1 9
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
alpha_dc = 0.99;
I_CBO = 10; // i n
A
I_CBO = I_CBO *10^ -6; // i n A
I_E = 10; // i n mA
I_E = I_E *10^ -3; // i n A
// The c o l l e c t o r c u r r e n t can be f i n d as ,
I_C = ( alpha_dc * I_E ) + I_CBO ; // i n A
I_C = I_C *10^3; // i n mA
disp ( I_C , The v a l u e o f I C i n mA i s ) ;
I_C = I_C *10^ -3; // i n A
// C a l c u l a t i o n t o f i n d t h e v a l u e o f b a s e c u r r e n t
I_B = I_E - I_C ; // i n A
I_B = I_B * 10^6; // i n
A
disp ( I_B , The v a l u e o f I B i n
A i s );
Scilab code Exa 6.20 Base current

103
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// Exa 6 . 2 0
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
alpha_dc = 0.99;
I_C = 6; // i n mA
I_C = I_C *10^ -3; // i n A
I_CBO = 15; // i n
A
I_CBO = I_CBO *10^ -6; // i n A
// The e m i t t e r c u r r e n t ,
I_E = ( I_C - I_CBO ) / alpha_dc ; // i n A
// The b a s e c u r r e n t ,
I_B = I_E - I_C ; // i n A
I_B = I_B *10^6; // i n
A
A i s );
Scilab code Exa 6.22 Emitter current

// Exa 6 . 2 2
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
alpha_dc = 0.98;
I_CBO = 12; // i n
A
I_CBO = I_CBO * 10^ -6; // i n A
I_B = 120; // i n
A
I_B = I_B * 10^ -6; // i n A
beta_dc = alpha_dc /(1 - alpha_dc ) ;
I_E = ((1 + beta_dc ) * I_B ) + ((1 + beta_dc ) * I_CBO
) ; // i n A
14 I_E = I_E * 10^3; // i n mA
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15
disp ( I_E , The v a l u e o f I E i n mA i s ) ;
Scilab code Exa 6.23 Region of operation

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25
26
// Exa 6 . 2 3
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
bita = 100;
V_BEsat = 0.8; // i n V
V_CEsat = 0.2; // i n V
V_BEact = 0.7; // i n V
V_CC = 10; // i n V
V_BB =5; // i n V
R_E = 2; // i n k
R_C = 3; // i n k
R_B = 50; // i n k
// A p p l y i n g KVL t o c o l l e c t o r l o o p
// V CC= I C s a t R C +V CEsat +I E R E and I E=
I C s a t+I B , So
// I B= ( ( V CCV CEsat ) (R C+R E ) I C s a t ) /R E ;
(i)
// A p p l y i n g KVL t o b a s e l o o p
// V BBI B R B V BEsatI E R E =0 and I E= I C s a t+
I B , So
//V BBV BEsat= R E I C s a t + ( R B+R E ) I B
( ii )
// From eq ( i ) and ( i i )
I_B = (( V_BB - V_BEsat ) *5 - ( V_CC - V_CEsat ) *2) / (( R_B +
R_E ) *5 - R_E *2) ; // i n mA
I_Csat = (( V_CC - V_CEsat ) - R_E * I_B ) /( R_C + R_E ) ; // i n mA
I_Bmin = I_Csat / bita ; // i n mA
if I_B < I_Bmin then
105
disp ( S i n c e t h e v a l u e o f I B ( + string ( I_B *10^3)

+ A ) i s l e s s t h a n t h e v a l u e o f I Bmin ( +
string ( I_Bmin *10^3) +
A ) );
disp ( So t h e t r a n s i s t o r i s n o t i n t h e s a t u r a t i o n
r e g i o n . But i t i s c o n d u c t i n g h e n c e i t can
n o t be i n c u t o f f . )
disp ( T h e r e f o r e t h e t r a n s i s t o r i s i n t h e a c t i v e
r e g i o n )
27
28
29
30 end
Scilab code Exa 6.24 IB IC and VCE

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// Exa 6 . 2 4
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
Beta = 100;
V_BEsat = 0.8; // i n V
V_CEsat = 0.2; // i n V
V_BEact = 0.7; // i n V
V_CC = 10; // i n V
V_BB =5; // i n V
R_E = 2; // i n k
R_C = 3; // i n k
R_B = 50; // i n k
// A p p l y i n g KVL t o i n p u t l o o p
// V BB= I B R B+(1+ Beta ) I B R E+V BEact
I_B = ( V_BB - V_BEact ) /( R_B +(1+ Beta ) * R_E ) ; //
// The c o l l e c t o r c u r r e n t ,
I_C = Beta * I_B ; // i n mA
// A p p l y i n g KVL t o c o l l e c t o r c i r c u i t
// V CC= I C s a t R C +V CEsat +( I C+I B ) R
V_CEact = V_CC - I_B * R_E - I_C *( R_C + R_E ) ; // i n
106
or
i n mA
E
V
24 // The b a s e c u r r e n t ,
25 I_B = I_B *10^3; // i n
A
26 disp ( I_B , The v a l u e o f I B i n
A i s : )
27 disp ( I_C , The v a l u e o f I C i n mA i s : )
28 disp ( V_CEact , The v a l u e o f V CE i n v o l t s i s
: )
Scilab code Exa 6.25 Region of operation

// Exa 6 . 2 5
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
Beta = 100;
V_CEsat = 0.2; // i n V
R_B = 150; // i n k ohm
R_C = 2; // i n k ohm
V_CC = 10; // i n V
V_BEsat = 0.8; // i n V
I_B = ( V_CC - V_BEsat ) / R_B ; // i n mA
I_C = ( V_CC - V_CEsat ) / R_C ; // i n mA
I_Bmin = I_C / Beta ; // i n mA
I_B = I_B *10^3; // i n
A
I_Bmin = I_Bmin *10^3; // i n
A
if I_B > I_Bmin then
disp ( S i n c e t h e v a l u e o f I B ( + string ( I_B ) + A
) i s g r e a t e r t h a n t h e v a l u e o f I Bmin ( +
string ( I_Bmin ) + A ) ) ;
20
disp ( So t h e t r a n s i s t o r i s i n t h e s a t u r a t i o n
r e g i o n . )
21 end
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107
Scilab code Exa 6.26 Value of VBB

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// Exa 6 . 2 6
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
Beta = 100;
V_CE = 0.2; // i n V
V_BE = 0.8; // i n V
R_C = 500; // i n
R_B = 44*10^3; // i n
R_E = 1*10^3; // i n
V_CC = 15; // i n V
V_GE = -15; // i n V
// A p p l y i n g KVL t o c o l l e c t o r c i r c u i t , V CCV GE
I C s a t R CV CEI E R E=0 , but I C s a t= Beta
I Bmin and I E= 1+Beta
// Minimum v a l u e o f b a s e c u r r e n t ,
I_Bmin = ( V_CC - V_GE - V_CE ) /( R_C * Beta +(1+ Beta ) * R_E ) ; //
in A
// A p p l y i n g KVL t o t h e b a s e e m i t t e r c i r c u i t , V BB
I Bmin R BV BEI E R E + V CC=0
// The v a l u e o f V BB ,
V_BB = I_Bmin * R_B + V_BE + (1+ Beta ) * I_Bmin * R_E - V_CC ;
// i n V
I_Bmin = I_Bmin *10^3; // i n mA
disp ( I_Bmin , The v a l u e o f I B ( min ) i n mA i s : )
disp ( V_BB , The v a l u e o f V BB i n v o l t s i s : )
Scilab code Exa 6.27 Minimum value of RC required

1
2
// Exa 6 . 2 7
format ( v ,6)
108
3 clc ;
4 clear ;
5 close ;
6 // Given d a t a
7 V_ECsat = 0.2; // i n V
8 V_CC = 10; // i n V
9 V_EBsat = 0.8; // i n V
10
11 // P a r t ( i )
12 Beta = 100;
13 R_B = 220; // i n k
14 // A p p l y i n g KVL t o c o l l e c t o r
15
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19
20
21
22
23
24
25
26
27
c i r c u i t , V CC= V EC+
ICRC
ICRC = V_CC - V_ECsat ; // i n V
// A p p l y i n g KVL t o i n p u t l o o p , V CC= V EBsat+I B R B
(i)
I_B = ( V_CC - V_EBsat ) / R_B ; // i n mA
I_C = Beta * I_B ; // i n mA
R_Cmin = ICRC / I_C ; // i n k
is :
disp ( R_Cmin , The minimum v a l u e o f R C i n k
)
// P a r t ( i i )
R_C = 1.2; // i n k
I_Csat = ICRC / R_C ; // i n mA
I_B = I_Csat / Beta ; // i n mA
// From eq ( i )
R_B = ( V_CC - V_EBsat ) / I_B ; // i n k
i s : )
disp ( R_B , The maximum v a l u e o f R B i n k
Scilab code Exa 6.28 Value of RE

1 // Exa 6 . 2 8
2 format ( v ,6)
3 clc ;
4 clear ;
109
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close ;
// Given d a t a
Beta = 100;
V_BEsat = 0.8; // i n V
V_CEsat = 0.2; // i n V
V_BEact = 0.7; // i n V
V_CC = 10; // i n V
R_E = 1; // i n k
R_C = 2; // i n k
R_B = 100; // i n k
Beta =100;
// A p p l y i n g KVL t o c o l l e c t o r c i r c u i t
// V CC= I C s a t R C +V CE +R E I E
// but I E= a l p h a I C s a t
I_Csat = ( V_CC - V_CEsat ) /( R_C + R_E * alpha ) ; // i n mA
I_Bmin = I_Csat / Beta ; // i n mA
// A p p l y i n g KVL t o b a s e l o o p
// V CC= I B R B +V BEsat +I E R E
// but I E= I C s a t+I B
I_B = ( V_CC - V_BEsat - I_Csat * R_E ) /( R_B + R_E ) ; // i n mA
I_B = I_B *10^3; // i n
A
A i s : )
I_B = I_B *10^ -3; // i n mA
I_Bmin = I_Bmin *10^3; // i n
A
A i s : )
disp ( I_Bmin , The minimum v a l u e o f I B i n
I_Bmin = I_Bmin *10^ -3; // i n mA
disp ( S i n c e t h e v a l u e o f I B i s g r e a t e r t h a n t h e
v a l u e o f I Bmin , )
disp ( Hence t h e t r a n s i s t o r i s i n s a t u r a t i o n . )
end
// The e m i t t e r c u r r e n t ,
I_E = (1+ Beta ) * I_Bmin ; // i n mA
// The v a l u e o f R E
R_E = ( V_CC - V_BEact - I_Bmin * R_B ) / I_E ; // i n k
disp ( R_E , The v a l u e o f R E i n k
i s : )
disp ( So R E s h o u l d be g r e a t e r t h a n t h i s v a l u e i n
110
o r d e r to b r i n g the t r a n s i s t o r j u s t out o f
s a t u r a t i o n )
Scilab code Exa 6.29 Collector voltage

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// Exa 6 . 2 9
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
V_CC = 9; // i n V
V_BE = 0.8; // i n V
V_CE = 0.2; // i n V
R_B = 50; // i n k
R_C =2; // i n k
R_E = 1; // i n k
Beta =70;
// A p p l y i n g KVL t o i n p u t l o o p , V CC= I B R B +V BE +
I E R E
// V CC V BE= ( R B+R E ) I B + R E I C
(i)
// A p p l y i n g KVL t o o u t p u t l o o p , V CC= R C I C +V CE
+I C R E +I B R E
( ii
// I B = ( ( V CC V CE ) (R C+R E ) I C ) /R E
)
// From eq ( i ) and ( i i )
I_C = ( ( V_CC - V_BE ) -( R_B + R_E ) * ( V_CC - V_CE ) / R_E )
/(1 -( R_B + R_E ) *( R_C + R_E ) ) ; // i n mA
I_B = (( V_CC - V_CE ) -( R_C + R_E ) * I_C ) / R_E // i n mA
I_Bmin = I_C / Beta ; // i n mA
disp ( S i n c e t h e v a l u e o f I B ( + string ( I_B ) + mA
) i s g r e a t e r t h a n t h e v a l u e o f I Bmin ( +
string ( I_Bmin ) + mA) )
disp ( So t h e t r a n s i s t o r i s i n s a t u r a t i o n )
111
25 end
26 V_C = V_CC - I_C * R_C ; // i n V
27 disp ( V_C , The v a l u e o f c o l l e c t o r
28
29
voltage in volts i s
: )
Beta = I_C / I_B ;
disp ( Beta , The minimum v a l u e o f b e t a t h a t w i l l
change the s t a t e o f the t r a s i s t o r i s : )
112
Chapter 7
Optoelectonic Devices
Scilab code Exa 7.1 Component value

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11
12
// Exa 7 . 1
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
O_V = 5; // o u t p u t v o l t a g e i n V
V_D = 1.5; // v o l t a g e d r o p i n V
R = ( O_V - V_D ) / O_V ;
R = R * 10^3; // i n ohm
disp (R , The r e s i s t a n c e v a l u e i n
i s );
disp ( As t h i s i s n o t s t a n d a r d v a l u e , u s e R=680
which i s a s t a n d a r d v a l u e )
Scilab code Exa 7.2 Open circuit voltage

1
2
// Exa 7 . 2
format ( v ,6)
113
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33
clc ;
clear ;
close ;
// Given d a t a
N_A = 7.5*10^24; // i n atoms /m3
N_D = 1.5*10^22; // i n atoms /m3
D_e = 25*10^ -4; // i n m2/ s
D_h = 1*10^ -3; // i n m2/ s
Torque_eo = 500; // i n n s
Torque_ho = 100; // i n n s
n_i = 1.5*10^16; // i n /m3
e = 1.6*10^ -19; // i n C
P_C = 12.5; // i n mA/cm2
// E l e c t r o n d i f f u s i o n l e n g t h
L_e = sqrt ( D_e * Torque_ho *10^ -9) ; // i n m
L_e = L_e * 10^6; // i n
m
// h o l e d i f f u s i o n l e n g t h
L_h = sqrt ( D_h * Torque_ho *10^ -9) ; // i n m
L_h = L_h * 10^6; // i n
m
// The v a l u e o f J s can be c a l c u l a t e d as ,
J_s = e *(( n_i ) ^2) *( ( D_e /( L_e *10^ -6* N_A ) ) + ( D_h /(
L_h *10^ -6* N_D ) ) ) ; // i n A/m2
J_s = J_s * 10^3; // i n A/cm2
V_T = 26; // i n mV
I_lembda = 12.5*10^ -3;
I_s = 2.4*10^ -4;
// Open c i r c u i t v o l t a g e
V_OC = V_T * log ( 1+( I_lembda / J_s ) ) ; // i n mV
V_OC = V_OC * 10^ -3; // i n V
disp ( V_OC , Open c i r c u i t v o l t a g e i n V i s ) ;
// Note : There i s c a l c u l a t i o n e r r o r t o e v a l u a t e t h e
v a l u e o f VOC s i n c e 2610 3 l o g
(1+12.510 3/2.410 4) c a l c u l a t e d as 0 . 1 0 3 1 8
not 0 . 5 2 2 V
114
Scilab code Exa 7.3 Photocurrent density

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19
// Exa 7 . 3
format ( v ,6)
clc ;
clear ;
close ;
// Given d a t a
Phi_o = 1*10^21; // i n m2 s 1
Alpha = 1*10^5; // i n m1
W = 25; // i n
m
W = W * 10^ -6; // i n m
e = 1.6*10^ -19; // i n C
// At t h e f r o n t e d g e o f i n t r i n s i c r e g i o n , t h e
g e n e r a t i o n r a t e o f EHP
G_L1 = Alpha * Phi_o ; // i n m3 s 1
// At t h e back e d g e o f i n t r i n s i c r e g i o n , t h e
g e n e r a t i o n r a t e o f EHP
G_L2 = Alpha * Phi_o * %e ^( ( - Alpha * W ) ) ; // i n m3 s 1
// Photo c u r r e n t d e n s i t y ,
J_L = e * Phi_o *(1 - %e ^( - Alpha * W ) ) ; // i n A/m2
J_L = J_L * 10^ -1; // i n mA/cm2
disp ( J_L , Photo c u r r e n t d e n s i t y i n mA/cm2 i s ) ;
115

Electonic Devices - S. Sharma

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Scilab Textbook Companion for

by a grant from the National Mission on Education through ICT,

2 Energy Bands And Charge Carriers in Semiconductor

3 Excess Carriers In Semiconductors

6 Bipolar Junction Transistor

List of Scilab Codes

Hole concentration at equilibrium . . . . . . . . .

Voltages at all nodes . . . . . . . . . . . . . .

Scilab code Exa 2.1 Energy gap

Scilab code Exa 2.2 Wavelength

Scilab code Exa 2.3 Position of Fermi level

Scilab code Exa 2.4 Probability

Scilab code Exa 2.5 Thermal equilibrium hole concentration

12 N_v = N_v * ( T2 / T1 ) ^(3/2) ; // i n cm3

Scilab code Exa 2.6 Mobility of electrons in copper

Scilab code Exa 2.7 Density of free electrons

Scilab code Exa 2.8 Drift velocity

15 A = %pi *(( r ) ^2) ; // i n m2

Scilab code Exa 2.9 Mobility of charge carriers

disp ( Miu_e , The m o b i l i t y i n m2/Vs e c i s ) ;

Scilab code Exa 2.10 Conductivity of pure Si

Scilab code Exa 2.11 Number of donor atoms

Scilab code Exa 2.12 Conductivity of speciman

Scilab code Exa 2.13 Mobility of electrons in Ge

11 e = 1.6 * 10^ -19; // i n C

Scilab code Exa 2.14 Density and mobility of holes

Scilab code Exa 2.15 Current produced

Scilab code Exa 2.16 Resistivity of doped Ge

Rho_n = 1/ Sigma_n ; // i n ohm m

Scilab code Exa 2.17 Current produced in Ge sample

Scilab code Exa 2.18 Conductivity of pure Si

Scilab code Exa 2.19 Hall voltage produced

Scilab code Exa 2.20 Hall coefficient and mobility of electrons

Scilab code Exa 2.21 Concentration of holes in Si crystals

Scilab code Exa 2.22 Hall angle

Scilab code Exa 2.23 Current density in speciman

Scilab code Exa 2.24 Relaxation time

Scilab code Exa 2.25 Temperature

Scilab code Exa 2.26 Thermal equilibrium hole concentration

Scilab code Exa 2.27 Required doping concentration

Scilab code Exa 2.28 Quasi Fermi energy levels

Scilab code Exa 3.1 Hole concentration at equilibrium

Scilab code Exa 3.3 Position of Fermi level

Scilab code Exa 3.4 Diffusion coefficients of electrons and holes

Scilab code Exa 3.5 Diffusion length

Scilab code Exa 3.6 Concentration of holes and electrons

Scilab code Exa 3.7 Electron transit time

Scilab code Exa 3.8 Resistivity of intrinsic Ge

Scilab code Exa 3.9 Hole and electron concentration

Scilab code Exa 3.10 Ratio of donor atoms to Si atom

Scilab code Exa 3.11 Equillibrium electron and hole densities

Scilab code Exa 3.12 Carrier concentration

Scilab code Exa 3.13 Generation rate due to irradiation

9 R_g = del_n / Torque_p ; // i n h o l e p a i r s / s e c /cm3

Scilab code Exa 3.14 Mobility of minority charge carrier

Scilab code Exa 3.15 Hall and electron diffusion current

Scilab code Exa 3.17 Current density in Si

Scilab code Exa 3.18 Resistance of the bar

Scilab code Exa 3.19 Depletion width

Scilab code Exa 3.20 Minority carrier density

Scilab code Exa 3.21 Collector current density

Scilab code Exa 3.22 Band gap