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IRF1407
AUTOMOTIVE MOSFET
Typical Applications
VDSS = 75V
Benefits
RDS(on) = 0.0078
ID = 130AV
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
Max.
Units
130V
92V
520
330
2.2
20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175
A
W
W/C
V
mJ
A
mJ
V/ns
C
Thermal Resistance
Parameter
RJC
RCS
RJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.50
0.45
62
C/W
1
10/11/01
IRF1407
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Min.
75
2.0
74
Typ.
0.09
160
35
54
11
150
150
140
Max.
0.0078
4.0
20
250
200
-200
250
52
81
IDSS
LD
4.5
LS
7.5
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance U
5600
890
190
5800
560
1100
V(BR)DSS
V(BR)DSS/TJ
IGSS
Units
V
V/C
V
S
A
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250A
Reference to 25C, ID = 1mA
VGS = 10V, ID = 78A T
VDS = 10V, ID = 250A
VDS = 25V, ID = 78A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150C
VGS = 20V
VGS = -20V
ID = 78A
VDS = 60V
VGS = 10VT
VDD = 38V
ID = 78A
RG = 2.5
VGS = 10V T
D
Between lead,
6mm (0.25in.)
G
from package
and center of die contact
S
VGS = 0V
VDS = 25V
= 1.0KHz, See Fig. 5
VGS = 0V, VDS = 1.0V, = 1.0KHz
VGS = 0V, VDS = 60V, = 1.0KHz
VGS = 0V, VDS = 0V to 60V
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Q
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Conditions
D
MOSFET symbol
130V
showing the
A
G
integral reverse
520
S
p-n junction diode.
1.3
V
TJ = 25C, IS = 78A, VGS = 0VT
110 170
ns
TJ = 25C, IF = 78A
390 590
nC di/dt = 100A/s T
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
U Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
VCalculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
WLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
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IRF1407
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
4.5V
10
100
4.5V
10
1
0.1
10
100
0.1
1000.00
3.0
5.0
7.0
9.0
11.0
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13.0
2.0
(Normalized)
ID , Drain-to-Source Current ( )
2.5
VDS = 15V
20s PULSE WIDTH
3.0
I D = 130A
TJ = 175C
100.00
10.00
100
T J = 25C
10
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
20
40
60
80
TJ , Junction Temperature
( C)
IRF1407
100000
15
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
V DS = 37V
Ciss
Coss
1000
Crss
V DS = 15V
100
10
100
1000.00
120
160
200
10000
80
100.00
40
TJ = 175C
1000
100
10.00
T J = 25C
1.00
100sec
10
1msec
Tc = 25C
Tj = 175C
Single Pulse
VGS = 0V
10msec
0.10
0.0
1.0
2.0
V DS = 60V
12
ID = 78A
3.0
10
100
1000
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IRF1407
140
LIMITED BY PACKAGE
120
VGS
D.U.T.
RG
100
RD
VDS
-VDD
80
10V
Pulse Width 1 s
Duty Factor 0.1 %
60
40
VDS
20
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( C)
10%
VGS
td(on)
tr
t d(off)
tf
(Z thJC)
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t1 / t
J = P DM x Z thJC
+T C
0.1
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IRF1407
650
1 5V
ID
TOP
32A
55A
+
V
- DD
IA S
20V
0 .0 1
tp
D .U .T
RG
520
D R IV E R
VDS
BOTTOM
78A
390
260
130
0
25
50
75
100
125
Starting T , Junction
Temperature
J
150
175
( C)
IAS
10 V
QGD
3.5
VG
Charge
50K
12V
.2F
.3F
D.U.T.
+
V
- DS
QGS
3.0
ID = 250A
2.5
2.0
1.5
VGS
25
50
T J , Temperature ( C )
3mA
IG
ID
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IRF1407
1000
0.01
100
0.05
0.10
10
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
400
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
300
200
100
0
25
50
75
100
125
150
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IRF1407
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
R
-
Q
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
RG
VGS
+
-
VDD
Period
D=
P.W.
Period
[VGS=10V ] ***
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple 5%
[ ISD ]
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IRF1407
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.1 13)
2.62 (.1 03)
10.54 ( .415 )
10.29 ( .405 )
-B -
3 .78 (.14 9)
3 .54 (.13 9)
4 .69 (.18 5)
4 .20 (.16 5)
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.2 55 )
6.10 (.2 40 )
4
1 5.24 ( .600 )
1 4.84 ( .584 )
L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - SOU RCE
4 - D R A IN
1.1 5 (.04 5)
M IN
1
4.0 6 (.160)
3.5 5 (.140)
3X
3X
1 .40 (.05 5)
1 .15 (.04 5)
0.93 ( .037 )
0.69 ( .027 )
0.3 6 ( .014 )
3X
M
B A M
0.5 5 (.022)
0.4 6 (.018)
2.92 ( .115 )
2.64 ( .104 )
3 O U TLIN E C O N F O R M S TO JE D E C O U TL IN E TO -220 A B .
2 C O N T R O L LIN G D IM E N S IO N : IN C H
4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU D E B U R R S .
THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/01
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/