r EP27122A INTERNATIONAL RECTIFIER | TCR Provisional Data 1BQ SERIES 1A single phase D.LL. Schottky bridge FEATURES ‘* Convenient DIP case design conforming to standard 0.1 inch lead spacing * Wide operational and storage temperature ranges from —55°C to + 150°C © 20 volts and 40 vols VRRM © 0.65 volts V, @ 10. Aper diode * Moisture Resistant Expoxy Case SPECIFICATIONS ELECTRICAL RATINGS and CHARACTERISTICS lovayy Maximum average output current 1A Tamb = 45°C les Maximum, peak one cycle, non 30 repetitive forward current 10ms Vey Maximum peak forward voliage drop 0.65 ¥ perdiods, IFM= 1.0. All dimensions in mm tay Typical peak reverse current per diode at rated V sm T, = 2sC 20 mA T= 10% 50 mA VOLTAGE DATA Type Mig View = fo wa20 | | 20 14 18Q 40 40 28‘The current flow in a Schottky barrier rectifier is due to ‘majority carrier conduction and is not affected by reverse transients due to stored charge and minonty carriae injection as in conventianal PN diodes. The Schottky barrier rectlier may be considered for Purposes of circuit analysis, as an ideal diode in paraltel with a variable capacitance equal in ‘value to the junction ‘capacitance. See Figure 1 THEAMAL CONSIDERATIONS: The derating curve of figure 2 may be used for initial design work, Thermal runaway is entirely Possible on marginal designs due to the inhorently laras. reverse leakage of Schattky barrier rectifiers and the fact that reverse power multiplies about 1.32 times foreach 5°C ot unction temperature increase \tis recommended that ail designs be verified at an Ambient temperature at least 10°C above the maximum at which the equipment will ever rave toaperate, INTERNATIONAL ‘AETDNGE VE ROERGE Oe unc Vrevense vounes 9047 ; seniaieeen Pott ae One ic ese we oe ion ions Srcuntromennnan : i @ s § 2 = ecaur ater RECTIFIER