FDP083N15A

FDP083N15A _F102
N-Channel PowerTrench MOSFET

150 V, 117 A, 8.3 m
Features
Description
RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A
This N-Channel MOSFET is produced using Fairchild

Semiconductors advanced PowerTrench process that has
been tailored to minimize the on-state resistance while maintaining superior switching performance.
Fast Switching Speed

Low Gate Charge, QG = 64.5 nC(Typ.)
High Performance Trench Technology for Extremely Low
RDS(on)
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
High Power and Current Handling Capability
Battery Protection Circuit
RoHS Compliant
Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter
G
DS
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
-Continuous (TC = 25oC, Silicon Limited)
Unit
V
20
117
-Continuous (TC = 100oC, Silicon Limited)
83
- Pulsed
(Note 1)
468
(Note 2)
542
mJ
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds
TL
FDP083N15A_F102
150
- Derate above 25oC
294
1.96
W/oC
-55 to +175
oC
o
300
*Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
FDP083N15A_F102
RJC
Thermal Resistance, Junction to Case, Max.
0.51
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
2011 Fairchild Semiconductor Corporation

FDP083N15A_F102 Rev. C1
Unit
o
C/W
www.fairchildsemi.com
FDP083N15A_F102 N-Channel PowerTrench MOSFET
March 2013
Device Marking
FDP083N15A
Device
FDP083N15A_F102
Package
TO-220
Description
F102: Trimmed Leads
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted

Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
0.08
V/oC
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TC = 25oC

ID = 250A, Referenced to
25oC
VDS = 120V, VGS = 0V
VDS = 120V, TC = 150oC
500
VGS = 20V, VDS = 0V
100
A
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
2.0
4.0
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
6.85
8.30
gFS
Forward Transconductance
VDS = 10V, ID = 75A
139
VDS = 25V, VGS = 0V

f = 1MHz
4645
6040
pF
1445
1880
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain Miller Charge
ESR
Equivalent Series Resistance(G-S)
VDS = 75V, VGS = 0V

f = 1MHz
100
4570
6040
pF
460
1880
pF
20
pF
64.5
84
nC
19.1
nC
8.7
nC
13.5
nC
f=1MHz
2.5
VDD = 75V, ID = 75A

VGS = 10V, RGEN = 4.7
22
54
ns
58
126
ns
VDS = 120V, ID = 75A

VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
(Note 4)
61
132
ns
26
62
ns
Drain-Source Diode Characteristics

IS
Maximum Continuous Drain to Source Diode Forward Current
117
ISM
Maximum Pulsed Drain to Source Diode Forward Current
468
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
1.25
trr
Reverse Recovery Time
96
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A

dIF/dt = 100A/s
268
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25C, L = 3mH, ISD = 19A
3. ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics

Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics

300
VGS = 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
ID, Drain Current[A]
ID, Drain Current[A]
500
100
175 C
o
25 C
10
o
-55 C
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 10V
2. 250s Pulse Test
10
0.1
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
3
4
5
VGS, Gate-Source Voltage[V]
500
IS, Reverse Drain Current [A]
12
10
VGS = 10V
8
VGS = 20V
100
o
175 C
10
*Notes:
1. VGS = 0V
*Note: TC = 25 C
100
200
300
ID, Drain Current [A]
1
0.0
400
Figure 5. Capacitance Characteristics
25 C
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
14
RDS(ON) [m],
Drain-Source On-Resistance
2. 250s Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics

10
10000
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
Coss
1000
Crss
100
*Note:
1. VGS = 0V
2. f = 1MHz
50
0.1
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
1
10
VDS, Drain-Source Voltage [V]

30
VDS = 30V
VDS = 75V
VDS = 120V
*Note: ID = 75A
14
28
42
56
Qg, Total Gate Charge [nC]
70
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
3.0
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250A
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 75A
0.5
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current

vs. Case Temperature
1000
120
100
100
10s
10
100s
2.0
0.0
-100
200
Figure 9. Maximum Safe Operating Area
2.5
1ms
Operation in This Area

is Limited by R DS(on)
10ms
SINGLE PULSE
DC
0.1
TC = 25 C
80
VGS = 10V
60
40
20
TJ = 175 C
o
0.01
0.1
RJC = 0.51 C/W
1
10
100
VDS, Drain-Source Voltage [V]
0
25
300
RJC= 0.51 C/W
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Unclamped Inductive Switching

Capability
IAS, AVALANCHE CURRENT (A)
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
100
STARTING TJ = 25 C
10
STARTING TJ = 150 C
1
0.001
0.01
0.1
10
100
1000
tAV, TIME IN AVALANCHE (ms)

Typical Performance Characteristics (Continued)
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
Thermal Response [ZJC]
1
0.5
0.1
0.2
0.1
PDM
0.05
0.01
t1
0.02
0.01
*Notes:
Single pulse
1E-3
-5
10

t2
o
1. ZJC(t) = 0.51 C/W Max.

2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
-1
10
10
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms

Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop

Mechanical Dimensions
TO-220
(F102: Trimmed Leads)
Dimensions in Millimeters

tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I64

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FDP083N15A _F102

N-Channel PowerTrench MOSFET

RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A

This N-Channel MOSFET is produced using Fairchild

Fast Switching Speed

High Power and Current Handling Capability

Battery Protection Circuit

Motor drives and Uninterruptible Power Supplies

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Drain to Source Voltage

Gate to Source Voltage

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

-Continuous (TC = 25oC, Silicon Limited)

-Continuous (TC = 100oC, Silicon Limited)

Operating and Storage Temperature Range

- Derate above 25oC

*Package limitation current is 120A.

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

2011 Fairchild Semiconductor Corporation

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Electrical Characteristics TC = 25oC unless otherwise noted

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

ID = 250A, VGS = 0V, TC = 25oC

VDS = 120V, VGS = 0V

VDS = 120V, TC = 150oC

VGS = 20V, VDS = 0V

Gate Threshold Voltage

VGS = VDS, ID = 250A

Static Drain to Source On Resistance

VGS = 10V, ID = 75A

VDS = 10V, ID = 75A

VDS = 25V, VGS = 0V

Reverse Transfer Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate Charge Threshold to Plateau

Gate to Drain Miller Charge

Equivalent Series Resistance(G-S)

VDS = 75V, VGS = 0V

VDD = 75V, ID = 75A

VDS = 120V, ID = 75A

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode Characteristics

Maximum Continuous Drain to Source Diode Forward Current

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward Voltage

VGS = 0V, ISD = 75A

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0V, ISD = 75A

2011 Fairchild Semiconductor Corporation

FDP083N15A_F102 N-Channel PowerTrench MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID, Drain Current[A]