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Diffusion in
crystalline solids
Announcements
Next class will be on 19th Oct., Wednesday
No class on 14th and 18th Oct.
Minor-II Syllabus: Defects, phase diagrams
and diffusion (Lecture#16 to 29)
Minor-II: Seating plan will be uploaded on
Moodle. Strictly adhere to that.
Reach examination room at least 10 mins prior
to exam
Recap
For diffusion: Thermal energy and concentration gradient
Mathematical models to describe diffusion
Ficks Ist law:
dn
dc
DA
dt
dx
Flux proportional to
concentration gradient
2c
c
Ficks IInd law: D 2
x
t
Non steady state diffusion: J = f(x,t)
c
D 2
x
t
2
exp
u
du
Exp( u2)
Erf
x
c( x, t ) A B erf
2 Dt
Area
Diffusion couple
Cu-Zn & pure Cu welded together and heated to high temperature
t2 > t1 | c(x,t1)
t1 > 0 | c(x,t1)
t = 0 | c(x,0)
Concentration
C2
C1
C(+x, 0) = C1
C(x, 0) = C2
Cavg
t
x
A = (C1 + C2)/2
B = (C2 C1)/2
Dependence of D on T and
Concentration: Experimentally
and theoretically
Experimental Data:
D has exp. dependence on T
Recall: Vacancy does also!
Dinterstitial >> Dsubstitutional
Cu in Cu
C in -Fe
Al in Al
C in -Fe
Fe in -Fe
Fe in -Fe
Zn in Cu
Interstitial diffusion
1. Interstitial Mechanism
e.g. C in Fe
Substitutional diffusion
2. Vacancy Mechanism
e.g. B or P in Si
3. Direct interchange
4. Ring mechanism
Diffusion Application
Surface is often the most important part of the
component, which is prone to degradation
Surface hardening of steel components like gears is done
by carburizing or nitriding
Diffusion Application
Doping Silicon with P for n-type semiconductors:
Process:
1. Deposit P rich layers on surface.
silicon
2. Heat it.
3. Result: Doped semiconductor P regions.
silicon