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Fei Zhao, Huhu Cheng, Zhipan Zhang, Lan Jiang, and Liangti Qu*
Environmental energy harvesting devices hold great promise
for the next generation electronics. Nowadays, there are varieties of available energies as the candidates, such as thermal
power, hydropower, nuclear energy, but their applications are
suffering from the environmental pollution and/or large-scale
supporting equipments. In recent years, nano-/microelectronics
has provided new possibility of clean and renewable energy
power sources by developing piezoelectric,[14] triboelectric,[58]
and fluidicelectric[912] generators. However, an urgent challenge is to effectively convert these potential energies into the
directly utilized power without much loss of accompanied electrical, thermal, and mechanical energy during the conversion.
Ideally, the highly effective energy conversion is induced by a
spontaneous process (e.g., diffusion), such that there is no temperature variation, mechanical movement, and by-produced
pollutant (chemical energy loss).
Graphene-based materials with tunable properties provide
considerable opportunities for development of future-generation energy-transform devices.[1012] Among them, graphene
oxide (GO), rich in oxygen-related functional groups such as
hydroxyl and carboxyl groups, is of great interest for the potential applications in electronics, energy-related devices, and
smart systems that strongly depend on the agile regulation of
oxygen content.[1321] In this regard, we have demonstrated the
unique GO-based stimuli-responsive systems due to the sensitivity of GO with the moisture.[16,20] Meanwhile, the ionic and
electronic conductivities of GO vary with the alternation of
relative humidity (RH).[13,15,20] These results suggest the importance of the interaction between the oxygen-rich GO and water
molecules to tune the properties and functions of the final
materials and devices.
In this work, we present a power-generating phenomenon
of single GO film (GOF) with a preformed oxygen-containing
group gradient (also named as gradient GOF, g-GOF). The
DOI: 10.1002/adma.201501867
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Figure 1. Preparation processes and characterizations of g-GOF. a) MeA process of GOF with applied voltage under humid environment. The e and
O represented electrons and oxygen-containing ions, respectively. b) Cross-section scanning electron microscopic (SEM) image and c,d) the corresponding carbon and oxygen mapping from X-ray energy dispersive spectroscopy. e) XRD patterns of different sides of as-prepared GOF and g-GOF.
f) XPS spectra of different surfaces of g-GOF. The surfaces contacting with the top and bottom electrodes in (a) are noted as Top and Bottom,
respectively.
but much higher than that of the top surface (0.22), demonstrating the distribution variation of oxygen-containing groups
from top to bottom as shown in Figure 1a. Moreover, the high
resolution C 1s spectra (Figure 1f) confirmed the presence of
C O bands (286.6 eV) and C O bands (288.5 eV) on both
sides of the g-GOF.[14] In contrast with the corresponding
spectra of initial GOF sample (Figure S3, Supporting Information), the top side had the weakened C O and C O peaks,
indicating that the oxygen-containing groups on the top layers
of g-GOF were partially removed. In the meanwhile, the signals from bottom side presented the stronger C O and C O
peaks, implying the increasing O/C atomic ratio of bottom side
probably associated with the further oxidation. These results
also explained the inconsistent interlayer spacing change of
two sides of g-GOF observed by XRD.
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Figure 2. Operation of MEET process. a) Schematic illustration of a MEET cycle. The V and A represented the induced voltage and current along the
direction of arrows, respectively. b) Voltage and c) current output cycles of a prototype MEET device of g-GOF in response to the intermittent and periodic RH variation (RH = 30%). Experimental data of single d) voltage and e) current output cycle from (b) and (c) matched with RH. f) Thickness
change ratio, i.e., thickness change (d) divided by original thickness (d), and g) resistance alteration ratio, i.e., resistance alteration (R) divided by
original resistance value (R) of g-GOF matched with RH. For clarity in interpretation, ON and OFF in (d)(g) represent the injection and ejection of
moisture in experimental environment, respectively.
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of moisture and the moment that RH, voltage, current density, thickness change ratio (d/d), and resistance alteration
ratio (R/R) begin to increase, indicating the moisture adsorption induced positive electric output. At the time of moisture
ejection marked by OFF (red dashed line), the RH, d/d and
R/R started to decrease and the negative output appeared,
suggesting the moisture desorption induced negative electric
output. Several seconds later after RH return to zero, the electric output stopped when the d/d and R/R gently reduced
to zero, implying the desorption induced electronic output
was dominated by the release of residual water molecules in
g-GOF. Moreover, when the injection of moisture was maintained after the presence of positive plus, the negative signals
appeared once the moisture ejection process began (Figure S4,
Supporting Information), which was further substantiated that
Figure 3. Harvesting the body energy hidden in the respiratory moisture-tide and self-powered monitoring of body condition. a) MEET device that is
responsive to human breathing increased and decreased RH with exhale and inhale, respectively. b) The g-GOF was sandwiched in two gold electrodes
with vents to construct the MEET device. c) Voltage and d) current output generated by respiratory moisture-tide with a RH of 21%. e) Self-powered
monitoring of respiratory frequency relating to heart rate after different intensity of exercise.
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Figure 4. MEET process of g-GOF. a) Schematic illustration of the gradient distribution of oxygen-containing groups (e.g., carboxyl and hydroxy) in
g-GOF. b) Free hydrogen ions (H+) were ionized by adsorbed water from oxygen-containing groups and a density gradient of H+ was established.
c) When the free H+ diffused from high density side to low density side, the potential was induced and the electrons moved from bottom electrode to
top electrode along external circuit. d) With the desorption of moisture, the recombination of H+ with negatively charged O-functional groups reduced
the induced potential, resulting in reverse electrons flow in external circuit.
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Figure 5. Importance of oxygen-containing group gradient in g-GOF based MEET. a) Photographs of UV reduced GO (UV-rGO) dispersion (0.5 mg mL1)
with different UV-irradiation time, which were noted as A, B, and C. The different UV irradiation caused variant O/C ratios of 0.46, 0.27, and 0.2 for A, B, and
C, respectively. The UV-rGO dispersions (10 mL) of A, B, and C were filtrated in sequence to prepare GOF with oxygen-containing group steps. b) Voltage
and c) current output of UV-rGO based GOF with oxygen-containing group steps. d) Photographs of GO dispersions (0.5 mg mL1) prepared by hummers
oxidation (HO-GO) for different time which were noted as D, E, and F. The different degree of oxidation also caused variant O/C ratios of 0.46, 0.35, and 0.21
for D, E, and F. The HO-GO dispersions (10 mL) of D, E, and F were filtrated successively to prepare GOF with oxygen-containing group steps. e) Voltage
and f) current output of HO-GO based GOF with oxygen-containing group steps. The electric outputs in (b), (c), (e), and (f) were tested with RH = 30%.
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Supporting Information
Supporting Information is available from the Wiley Online Library or
from the author.
Acknowledgements
This work was supported by NSFC (Nos. 21325415, 21174019), National
Basic Research Program of China (2011CB013000), and Beijing Natural
Science Foundation (2152028).
Received: April 19, 2015
Revised: May 12, 2015
Published online: June 18, 2015
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