K2698

Silicon N-Channel MOSFET

Features
18A,500V,RDS(on)(Max0.27)@VGS=10V
Ultra-low Gate charge(Typical 42nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150)

General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology.this latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
AC-DC switching power supplies, DC-DC power Converters high
voltage H-bridge motor drive PWM

Absolute Maximum Ratings

Symbol
VDSS

Parameter

Value

Units

Drain Source Voltage

500

Continuous Drain Current(@Tc=25)

18

Continuous Drain Current(@Tc=100)

12.7

80

30

ID
IDM

Drain Current Pulsed

(Note1)

VGS

Gate to Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note2)

330

mJ

EAR

Repetitive Avalanche Energy

(Note1)

27.7

mJ

dv/dt

Peak Diode Recovery dv /dt

(Note3)

4.5

V/ ns

PD

Total Power Dissipation(@Tc=25)

208

TJ,Tstg

Junction and Storage Temperature

-55~150

300

TL

Channel Temperature

Thermal Characteristics
Symbol

Parameter

Value
Min

Typ

Max

Units

RQJC

Thermal Resistance , Junction -to -Case

0.60

/W

RQJA

Thermal Resistance , Junction-to -Ambient

40

/W

Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

K2698
Electrical Characteristics(Tc=25)
Characteristics

Symbol

Gate leakage current

Test Condition

Min

Type

Max

Unit

IGSS

VGS=25V,V DS=0V

10

nA

V(BR)GSS

IG=10 A,VDS=0V

30

IDSS

VDS=500V,V GS=0V

100

Drain -source breakdown voltage

V(BR)DSS

ID=10 mA,VGS=0V

500

Breakdown voltage Temperature

BVDSS/

0.5

V/

Gate-source breakdown voltage

Drain cut -off current

TJ

coefficient

ID=250A,Referenced
to 25

Gate threshold voltage

VGS(th)

VDS=10V,ID=1mA

Drain -source ON resistance

RDS(ON)

VGS=10V,ID=9A

0.23

0.27

Forward Transconductance

gfs

VDS=40V,ID=9A

16

Input capacitance

Ciss

VDS=25V,

2530

3290

Reverse transfer capacitance

Crss

VGS=0V,

11

14.3

Output capacitance

Coss

f=1MHz

300

390

VDD=250V,

40

90

ton

ID=18A

150

310

tf

RG=25

95

200

110

230

42

55

12

14

Min

Type

Max

Unit

Rise time

tr

Turn-on time
Switching time
Fall time
Turn-off time

ns
(Note4,5)

toff

Total gate charge(gate-source

pF

VDD=400V,
Qg

plus gate-drain)

VGS=10V,
nC

Gate-source charge

Qgs

Gate-drain("miller") Charge

Qgd

ID=18A
(Note4,5)

Source-Drain Ratings and Characteristics(Ta=25)

Characteristics

Symbol

Test Condition

Continuous drain reverse current

IDR

18

Pulse drain reverse current

IDRP

72

Forward voltage(diode)

VDSF

IDR=18A,VGS=0V

1.4

Reverse recovery time

trr

IDR=18A,VGS=0V,

500

ns

Reverse recovery charge

Qrr

dIDR / dt =100 A / s

5.4

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=5.2mH IAS=18A,VDD=50V,R G=25,Starting TJ=25
3.ISD18A,di/dt200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width300us,Duty Cycle2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution

2/7

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K2698

Fig.1 On State Characteristics

Fig.3 On-Resistance Variation vs

Drain Current

Fig.5 Capacitance Characteristics

Fig.2 Transfer Current Characteristics

Fig.4 Body Diode Forward Voltage

Variation with Source Current
and Temperature

Fig.6 Gate Charge Characteristics

3/7

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K2698

Fig.7 Breakdown Voltage Variation

Fig.9 Maximum Safe Operation Area

Fig.8 On-Resistance Variation

vs.Temperature

Fig.10 Maximum Drain Current vs

Case Temperature

11 Transient Thermal Response Curve

Fig.
Fig.11

4/7

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K2698

2 Gate Test Circuit & Waveform

Fig.1
Fig.12

3 Resistive Switching Test Circuit & Waveform

Fig.1
Fig.13

4 Unclamped Inductive Switching Test Circuit & Waveform

Fig.1
Fig.14
5/7

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K2698

5 Peak Diode Recovery dv/dt Test Circuit & Waveform

Fig.1
Fig.15

6/7

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K2698
247 Package Dimension
TOTO-247

Unit:mm

7/7

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