5.

75

6.00

6.25

6.75

6.50

7W

1.25

frequency, GHr

Fig. 7 Experimental and theoretical S,i-porantrler.~~ J f i ~ u i - p a t aniennu

ch
mcaiured ........... elechical model - - . - - - M O M

The values of the S12 and Sl,parameters are in good agreement with
measurement in the neighbourhood of the resonance. The maxima of
Slzand S,; parameters obtained with the model are at the same values
as the experimenral ones. The shape of the curves represented are
acceptable too.
Conclusion: A simple modcl, extracted from a 3D electromagnetic
method, is proposed to describe the electrical behaviour of coupled
patches. This model takes into account the coupling between dements
and is generalised in thc case of a patch array antenna. It can be used
in an electrical simulator to calculate the S-parameters with more
accuracy. As this method is economical in tcrms of computer time,
one can consider that its usc will improve the design of an anay with
numerous patches.

0 IEE 2003
Electronics Lellers Online No: 20030627
Dol: IO.1049/e1:20030627

I April 2003

A. Hafianc, H. Aissat and 0. Picon (ESYCOM, (iniver.vi& de Marnela- YalUe, 5 Bd Dercarres, 77454 Marne-lo-Yall& Cedex2, France)

Anlennn confgrrrafion: The perspective view of the antenna configuration is shown in Fig. lo, where the cylindrical DRA of radius 0 ,
height h, and dielectric constant E, is concentrically fed by a circular
aperture of radius F. The circular aperture was etched on the ground
plane o f a 50 0 microstrip feedlinc with a fork-like tuning stub. Bclaw
the tuning fork is a backing cavity of radius b, which is placed
concentrically with the aperture. Fig. I h shows the geometry of the
tuning fork. As studied in [ I l l , a distance I , between the two arms of
the fork is required to give B uniform field distribution in the aperture,
whereas 1, is used to fine-tune the input reactance. In addition, B small
straight microstrip section of length l2 is needed to have a wide
impedance bandwidth. All of them and the microstrip feedline have
width W, whereas the substrate has dielectric constant t:?,% and
thickness d. Two antennas were measured, namely antenna I and
antenna 2. The backing cavity is used for antenna 1. Antenna 2 is the
same a s antenna 1, except that the backing cavity is removed.

rk

c?>"O"c4DW

References

popular topic for the DRA. Stacking and parastic-element methods

[I-31 were used but they require more than one DRA. Some attention
has been paid to single-DRA configurations to reduce size and cost,
such as the airgap method (41, conductor-loading method [SI, dielectric-coating method 161, strip-loading method 17, 81, and special-DRA
method 191. Recently, it has been found that awidcband DRA can also
be obtained by using an annularexcitation slot [IO]. In this Lctter, we
extend the annular slot to become a circular aperture, which is
coupled by a microstrip l i n t with a fork-like tuning stub [ I l l . To
demonstrate the method a cylindrical DRA, excited in its fundamental TM,,,, mode [IO], is used in our configuration. A hemispherical
backing cavity, which is concentric with the aperture, is placcd
beneath the tuning fork to block the backside radiation through the
circular aperture. The proposed configuration can remarkably offer a
bandwidth as wide as 38%. The retum loss, radiation pattern, and
antenna gain of the configuration were measured. The results are
compared with those without the backing cavity. It is found that thc
bandwidth can further be increased to 40% if the backing cavity is
removed, at the cost of reducing the antenna gain.

-3

ABOUZAHKA.M., and K0NC.J.: 'Application ofthc threedimensional finite-difference time domain method to the analysis of
planar microstep circuits', IEEE MTT-S Inl. Micmw! Symp. Dig., 1990,
38, (7). pp. 218-252
2 WHEELER, H.A.: 'Transmission-line propcliies of a swip on dielectric
plane', IEEE MTT-S Inf Microw Sy". Dig., 1977
3 HAPIAN, A., CIRIO, L., and PICON. 0.: 'Elcct"cal model and mutual
coupling betwen microstrip antennas expressed through FDTD
method'. Proc. 30th European Microwa\,e Conf., Pans, France. October
2000
SHEEN.% ALLS.,

Wideband dielectric resonator antenna

excited by cavity-backed circular aperture
with microstrip tuning fork

Fig. 1 Antenna configurofion

r? Perspective view
b Geometry of tuning fork

"I

K.W. Leung and C.K. Leung

A wideband dielechic resonator antenna excited by a circular apenurc

is investigated enpenmentally. The aperture is coupled by a microship
feedline wifi a microsttip fork-like tuning stub. A backing cavity is
placcd beneath the stub 10 block undesirable backside radiation. The
rehlm loss, field panem, and antcnna gain of the proposed configuration were measured and the results are compared with those without
the backing cavily

lnrroducrion: In the last WOdecades, the dielectric resonator antenna

(DRA) has received extensivc attention [I-IO] because of its inherent
advantages, including its small size, light weight, low loss, low cost,
and ease o f excitation, Although the bandwidth of a DRA is wide
IO),
enough for many applications (- 10% for dielectric constant E,
investigation of bandwidth enhancement techniques has been a

ELECTRONlCS LETTERS

10th July 2003

I
5

frequency, GHI

Fig. 2 Measured relitin Imses of antennas I and 2

Vol. 39 No. 14

1033

Table 1: Measured resonant frequencies and bandwidths o f

antennas 1 and 2

co-polarised

frequency (min (SI,I) f ,=5.68 GHz, which is 2% higher than thc

predicted frequency fn. A very wide impedance bandwidth
(IS,lI<-lOdB) o f 3 X % is obtained, which is about four times the
typical. value for DRAs with 8,"- 10. Next, the return loss of
antenna 2 is discussed. With the backing cavity removed, the resonant
frequency is shifted t a h = S . X 0 G H r , which is 4.1% higher than the
predicted value. In this case, an even wider bandwidth of 40% is
obtained. This is expected as the backside radiation through the
aperture will reduce the Q-factor of the system, thus broadening the
bandwidth. The results are summarised in Table 1. An antenna with a
simple straight tuning stub of length 1=7.5 mm was also fabricated
and measured. It was found that the impedance was matched very well
at a lower resonant frequency of 5.29 G H r . The bandwidth was found
to be I I%, which is a typical value with no bandwidth enhancement.
Fig. 3 shows thc H-planc (I-. planc) and E-plane,(y-z plane)
radiation patterns of antenna I. The results were meaiured at four
diffcrcnt frequencies across the antenna passband. With reference IO
Fig. 3, broadside field panerns are obtained which is to be expected far
thc fundamental T M I I o mode. In the broadside direction (0=0'), the
cross-polarised fields arc at lcast 14 and 17 dB weaker than the copolaiised ficlds for the H- and E-plane radiation fields, respectively.
Sidelobes are observed for the E-plane field panern at the highest
passband frequency.f= 7.43 GHz. Nevetheless. the panem still exhibits
B broadside made. It rhguld be mentioned that since the backside
radiation of the aperture is already blocked by the backing cavity, the
backlobes are mainly caused by the finite ground plane diffraction.
Similar results were obtained for antenna 2, except that antenna 2 has
larger backlobes due to the backside radiation through the a p e m r e

/\
,

antenna2

Fig. 4 shows the measurcd antenna gains of the 11\10 antennas. For
antenna I , thc antenna gain is -4 dBi around the resonance of thc
antenna, and that the peak ofthe gain is -S.5 dBi around 6.3 GHr. It is
observed from Fig. 4 that antenna 2 has a similar antenna gain curve,
but the curve is shifted to a smaller level because some energy is lost in
the backside radiation. Note that the shift is less than 3 dB, showing that
the ape"
does not mdiatc cqually due to the presence of the DRA.
Finally, it should be mcntioncd that the hemispherical cavity was
uscd merely because it is immediately available in our laboratory, and
that it should not be a cntical factor in the design.
- - - 6.35GHz

180'
b

Acknowledgment: The work was fully supported by a grant from the

Research Grant Council of the Hong Kong Special Administrative
Region, China (Project No.: CityU I136/00E).

Fig. 3 Measured rudiatiun patterns ofonrennn I

U

Kplvne

h &plane

Rrsrrlls: A cylindiical DRA of U = 6. I mm, h = I I .5 mm, and

E , ~= 10 was measured using an HP8SIOC network analyscr. Using
a design formula [IO], the predicted T M l l o - m a d e resonant frcqucncy
o f t h e DRA is given by/o=5.57 CHr. The 50 Cl microstrip feedline
of W,=2.3 mm was printed on a substrate of ~ , ~ = 2 . 3 3and
d = 0 . 7 9 m m . The radii of the circular apcrturc and hollow hemispherical cavity are r = 6 . 0 mm and b=2.5 cm, respectively. For the
tuning fork. thc optimum values of I , = 3.2 mm, l7 = I .S m n , and
1, = 4 . 0 mm were used. Fig. 2 shows the measured return losses of
the two antennas. Antenna 1 is discussed first. As can be observed
from Fig. 2, a very good impedance march is observed at resonant

1034

0 IEE 2003
Elecrronics Larcrs Online Nu: 20030692
Dol: I O . 1O49/e1;2O030692

25 March 2003

K.W. Leung and C.K. Leung (Wi7eless Comniirnicofions R a e a r r h

Centre and Drporrment ofElectronic Engimering. Ciry University
Hong Kong, Kowluon. Hong K o n p )

References
I

and KAJPEZ, D.: 'Broadband stacked dielectric

sona at or antennas'. tlecrmn. Lnr., 1989, 25, pp. 1232-1233

KISHK. A.A., AHN. B.,

ELECTRONICS LETlERS

loth J u l y 2003 Vol. 39 No. 14

'Bandwidth enhancemcnt of dielectric resonator

antenna by loading a low-profile dielecttic disk of vety high
permittivity', E l e c n n . Lerr., 1997. 33, pp. 725-126
3 FAX:. 2.. er al.: 'Parasitic coplanar three-element dielectnc resonator
antenna rubarmy', Electron. Lex, 1996, 32, pp. 789-790
4 WONG, K.-L., CHEN, N.E., and CHBR, H.-T.: 'Analysis of a hemisphencal
dielecttic resonator antcnna with an airgap'. IEEE Microw Cuid. Wave
Lett., 1993,3, pp. 355-357
5 LEUNG, K.W.: 'Complex resonance and radiation of hemisphencal
dielectric resonator antenna with a concentric conductor'. IEEE Trans.
MicmK! Theory Eech., 2001, 49, pp. 524-531
6 CHEN. N.C.. era/.: 'Analysis o f a broadband slot-coupled dielectric-coated
hemispherical diclecttic resonator antenna', Micmb; Opf. Techno/. Leii.,
1995,8, pp. 13-16
7 NC. 1l.K , and LEUNG, K.W: 'Conformal-sulp-excited dielectric resonator
antenna with a parasitic strip'. IEEE Antennas and Propagation Society
Int. Symp. Dig.. Salt Lzke City, Utah, USA, 2000, Vol. 4. pp. 2080-2083
8 LONG. R.T..er d:'Use of parasitic strip to produce circular polarisation
and increased bandwidth for cylindtical dielectric resonator antenna',
Electron. LetI.. 2001, 37, pp. 40MOR
9 KISHK, A.A., y.13. Y., and GLISSON, A.W: 'Conical dielectnc resonator
antennas for wideband applications', IEEE Tmns. Antennas Pmpag.,
2002, 50, pp. 1 6 9 4 7 4
10 LEUNG, K.w., el al.: 'Annular-slot-coupled dielectric resonator antenna',
Eiectron. Lerr., 1998,34, pp. 1275-1277
1 1 SZE. J-Y., and WONG, K.-L.: 'Bandwidth enhancement of a microstrip-linefed printed wide-slot antenna', IEEE Tmns. Anfennus Pmpog., 200l,49,
pp. 1020-1024
2

LEUNC, K.W., ef al.:

Current-fed energy-recovery circuit for

plasma display panel
S a n g - K y o o Han, Gun-Woo M o o n and Myung-Joong Youn
A new current-fed energy-recovery circuit far B plasma display panel
is proposed. All power switcher are tumed on with LCTO-VOIU~Cswitching, and its suswining voltage is greatly reduced with the aid of
the dischargc cucrenl compensation. Funhennare, it fcatures a simpler
structure, less mass, lower current stress, and lower electromagnetic
interface than prior circuits. It is well suited for wall-hanging colour

TVs.

Introduction: A plasma display panel (PDP) is now expected to be the

leading candidate for large-area wall-hanging colour TVs, since it has
advantages over conventional display devices, e.g. large screen, wide
view angle, and thinness. Since a dielectric layer is encrusted on
sustaining and scanning electrodes, an intrinsic capacitance C, exists
between these two electrodes inherently. Therefore, a considerable
energy of 2C,>V: far each cycle is dissipated in the parasitic resistance
of the PDP and circuits during charging or discharging transients
without an energy-recoven circuit (ERC). Furthermore, the excessive
surge charging and discharging currents will give rise to electromagnetic interface (EMI) noises and increase the surge current ratings of
power switches. To solve these problems, a prior ERC [ I , 21 is
proposed as shown in Fig. 1. Although the circuit can rzcowr most
of the energy stored in C,, it still has several drawbacks. First, since it
has two large auxiliary circuits, the system is complex and bulky, and
the cost is high. Also, the large discharge current (about 150 A for a
42 inch PDP) causes serious voltage drops across the switching
elements and the parasitic resistance of circuits during plasma
discharge transients. Therefore, the effective voltage applied to the
PDP decreases, as docs the accumulated amnunt of the wall charge
[2]. To overcome these drawbacks, a new ERC far a PDP using
current source type as shown in Fig. 2 is proposed in this Letter. Sincc
it has only two inductors and capacitors instcad of the large auxilialy
circuit, the proposed circuit has desirable advantages such as a
simpler stmcture, less mass, lower cost of production, and fewer
power switching devices. Furthermore, thcre are no serious voltage
drops caused by the large discharge current due to the discharge
current compensation, which can also greatly reduce the current
flowing through power switches. Thus, the circuit can maintain the
panel to light at lower sustaining voltage [ 2 ] . In addition, the pawei
switches arc all turned on with zero-voltage-switching (ZVS) and thus
the proposed circuit has a very improved EM1 and high efficiency.

ELECTRONICS LETTERS

10th July 2003

plasma

pane

, ,

'b

to(=t4)

' t,

t2

'

' t3

bi

Fig. 2 Proposed cimcsir and key w0wfovm.i

Proposed circuit
h Key waveforms
U

a proposed circuit and its key waveforms. One cycle period of a proposed circuit is divided into two half
cycles, t,r, and t2-fl. Because the operation principles of two half
cycles are symmetric, only the first half cycle is explained. C , is
assumed to be charged to V J 2 . Bcfore to( = ti),vc is maintdincd to
V., and V.J2 is applied to L with M , and M1 con%ucting. Thus, i ,
increases linearly as ;'(I) = - 1, V<(t 4)/(2L), where li =
V,(i> -&)/(4L). Whcn M I and Mz are turned off at lo, mode 1
begins. With the initial conditions of i,,(tO)=lL and vc,(tc,)= V,, i,.
starts to charge C,, C,, and C2 and discharge C, and C, as follows:
Circuit operation: Fig. 2 shows

where C , , C,, C, and C, are assumed to be equal to C,, and L acts as a

current source lL.With this arrangement. the abrupt charging and
discharging operations of C,, are avoided and the voltage across C,>is
decreased toward - V,. When vc,, is clamped on - V,, V y gets to V,,
and Vydrops to 0 Vat I , . M, and Mqare htmed on and mode 2 begins.

Vol. 39 No. 74

1035