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I. INTRODUCTION
Dielectric Resonator Antennas (DRAs) have been widely
investigated by numerous antenna designers in the microwave
and millimeter frequency bands due to their attractive features
like high radiation efficiency, light weight, small size, low
temperature coefficient of frequency, wide impedance
bandwidth, zero conductor loss and no excitation of surface
waves [1-3]. Significant efforts for DRAs have been devoted to
achieve wide bandwidth enhancements in the past such as fractal
approach on DRA [4], introducing an air gap between the DRA
and ground plane [5], using multiple layers DRA [6], using
collinear parasitic elements [7], and by stacking parasitic DR
elements [8]. In order to further improve the bandwidth and other
radiation characteristics, rectangular DRA with slot-technique
iteration for wideband applications is proposed. The rectangularshaped DRAs offer practical advantages over cylindrical and
hemispherical ones in that they are easier to fabricate and have
more design flexibility.
In this work, a rectangular DRA fed by coaxial-probe is
developed and its characteristics have been investigated with the
help of simulations performed on CST Microwave StudioTM. The
Navneet Gupta
Department of Electrical and Electronics Engineering,
Birla Institute of Technology and Science, Pilani,
Rajasthan 333031, India
ngupta@pilani.bits-pilani.ac.in
characteristics of the antenna are simulated and discussed in
terms of return loss, gain and bandwidth. Iterations of cutting slot
in Dielectric Resonator (DR) are embedded on single structure of
DRA.
II. ANTENNA CONFIGURATION
A general expression linking the unloaded Q to the antenna
basic geometrical features is [9]:
Q = 2o
Stored Energy
Volume
2o ( r ) p
Radiated Power
Surface
with p > s 1
(a)
(b)
(c)
Fig. 2 Evolution of the proposed antenna by cutting rectangular and hemicylindrical slots
(a)
(b)
-20
-30
-40
-50
3.5
5.5
0
-10
-20
-30
4
4.55
5.5
Frequenccy (GHz)
Fig. 5 Reflection coefficient of rectangular DRA as a function of frequency shown
in Fig. 2 (a) and 3 (a)
0
-10
|S11| (dB)
The design of the structure is based on the facct that the overall
equivalent dielectric constant of DRA is decreaased due to slots
and enhances the bandwidth because dielecctric constant is
inversely proportional to bandwidth.
4.55
3.5
Frequency
y (GHz)
|S11| (dB)
|S11| (dB)
-10
-20
-30
-40
3.5
4.55
5.5
Frequenccy (GHz)
Fig. 6 Reflection coefficient of rectangular DRA as a function of frequency shown
in Fig. 2 (b)
|S11| (dB)
0
-5
-10
-15
-20
-25
-30
-35
-40
3.5
4.5
5.5
6.5
Frequency (GHz)
Fig. 7 Reflection coefficient of rectangular DRA as a functionn of frequency shown
in Fig. 2 (c)
Design and
Iterations
Resonance Frequenccy
(fc)
Bandwidth
Fractional
Gain
Rectangular
3.7GHz,
4.1GHz
BW <<
10% for all
bands.
----
Figure 1
4.5GH
Hz
and
Hz
4.85GH
Multi band
Iteration-1
|S11| (dB)
Figure 2(a)
and 3(a)
Iteration-2
Figure 2(b)
Iteration-3
3.5
4.5
5.5
Frequency (GHz)
Hz
4.9GH
Dual Band
4GHz
4.6GH
Hz
20%
~4.5dB
31%
~6.4dB
31%
~7.2dB
Dual Resonancee
5.1GHz
Figure 2(c)
Iteration-4
Figure 3(b)
4.2GHz
3.7GHz
4.6GH
Hz
Multi Resonance
USION
IV. CONCLU
Dr. Navneet Gupta obtained M.Sc. (PhysicsElectronics) in 1995 from H.N.B Garhwal Central
University (HNBGU), Srinagar, India with first rank
in the University. He received M.Tech in Materials
Technology in 1998 from Indian Institute of
Technology (IIT-BHU) (formerly IT-BHU). He did
his Ph.D. in the field of Semiconductor Devices in
2005 from HNBGU. Presently, he is Assistant
Professor and Convenor-Departmental Research
Committee in Electrical and Electronics Engineering
Department, Birla Institute of Technology and
Science, Pilani, (BITS-Pilani) Rajasthan, India. He has guided 1 Ph.D. student
and is currently guiding 4 Ph.D. candidates. He is on doctoral advisory
committee for 6 Ph.D. students. He completed 2 sponsored research projects
from UGC and DST. His research interests include Semiconductor Device
Modelling, RF-MEMS, Material Selection and Antenna Design. He is life
member of several international and national professional bodies. He has over 59
research publications (of which 29 are in reputed peer reviewed international and
national journals with good impact factors, and 30 in conference proceedings.).
He has published six books in the areas of engineering physics and electronics
engineering. He received Bharat Jyoti Award in 2011 by IIFS, New Delhi, India,
DST Young Scientist Award (Fast track Scheme) in Physical Sciences in 2007
and Gold Medal in M.Sc. His biography is included in Marquis Who's Who in
World and Marquis Who's Who in Science and Engineering. He is expert
reviewer of over 5 International Journals. He reviewed three books of Oxford
University Press, Pearson Education and Tata McGraw Hill publishers.