BAV19 / BAV20 / BAV21

BAV19 / 20 / 21

DO-35
Color Band Denotes Cathode

Small Signal Diode

Absolute Maximum Ratings*
Symbol
VRRM

TA = 25C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage

Value

Units

120
200
250
200

V
V
V
mA

1.0
4.0
-65 to +200

A
A
C

175

Value

Units

BAV19
BAV20
BAV21

IF(AV)

Average Rectified Forward Current

IFSM

Tstg

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range

TJ

Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol

Parameter

PD

Power Dissipation

500

mW

RJA

Thermal Resistance, Junction to Ambient

300

C/W

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Parameter

VR

Breakdown Voltage

VF

Forward Voltage

IR

Reverse Current

Test Conditions
BAV19
BAV20
BAV21

BAV19
BAV20
BAV21
CT

Total Capacitance

trr

Reverse Recovery Time

2001 Fairchild Semiconductor Corporation

IR = 100 A
IR = 100 A
IR = 100 A
IF = 100 mA
IF = 200 mA
VR = 100 V
VR = 100 V, TA = 150C
VR = 150 V
VR = 150 V, TA = 150C
VR = 200 V
VR = 200 V, TA = 150C
VR = 0, f = 1.0 MHz
IF = IR = 30 mA, IRR = 3.0 mA,
RL = 100

Min

Max

Units

1.0
1.25
100
100
100
100
100
100
5.0

V
V
V
V
V
nA
A
nA
A
nA
A
pF

50

ns

120
200
250

BAV19/20/21, Rev. C

(continued)

Typical Characteristics

50

325

Ta= 25 C

Reverse Current, I R [nA]

Reverse Voltage, VR [V]

Ta=25 C

300

275

40

30

20

10

0
3

10

20

30

50

100

55

R everse C urrent, I R [uA]

Figure 1. Reverse Voltage vs Reverse Current

BV - 1.0 to 100uA

100

R everse Voltage, V R [V]

GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature

Figure 2. Reverse Current vs Reverse Voltage

IR - 55 to 205 V

100

Ta= 25 C

Ta= 25 C
450

Forward Voltage, V R [mV]

Reverse Current, I R [nA]

90
80
70
60
50
40
30

400

350

300

250
20

180

200

220

240

Reverse Voltage, V R [V]

255

10

20

30

50

100

Forward Current, IF [uA]

GENERAL RULE: The Reverse Current of a diode will approximately

double for every ten (10) Degree C increase in Temperature

Figure 3. Reverse Current vs Reverse Roltage

IR - 180 to 225 V

Figure 4. Forward Voltage vs Forward Current

VF - 1.0 to 100uA

1.4

Ta= 25 C

Ta= 25 C

700

Forward Voltage, VF [mV]

Forward Voltage, V F [mV]

1.3

650

600

550

500

1.2
1.1
1.0
0.9
0.8
0.7

450
0.1

0.2

0.3

0.5

10

Forward Current, I F [mA]

Figure 5. Forward Voltage vs Forward Current

VF - 0.1 to 10mA

10

20

30

50

100

200

300

500

800

Forward Current, IF [mA]

Figure 6. Forward Voltage vs Forward Current

VF - 10 to 800mA

BAV19/20/21, Rev. C

BAV19 / BAV20 / BAV21

Small Signal Diode

(continued)

Typical Characteristics

(continued)

1.3

900

Ta= 25 C

Total Capacitance [pF]

Forward Voltage, VF [mV]

800

Ta= -40C
700
600

Ta= 25 C

500
400

Ta= +80 C
300

1.2

1.1

1.0

0.9

200
100
0.001

0.003

0.01

0.03

0.1

0.3

0.8

10

F orw ard C urrent, I F [m A ]

10

12

14

Reverse Voltage [V]

Figure 7. Forward Voltage

vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to +80 Deg C)

Figure 8. Total Capacitance

50

400

300

Current [mA]

40

30

IF

200

(A V

-A
V

100

ER

AG

ER
E

CT

IF I E

DC
U

RR

EN

I F = I R = 30 mA
Rloop = 100 Ohms
20
1.0

1.5

2.0

2.5

TmA

3.0

Reverse Recovery Current, I rr [mA]

50

100

150

Ambient Temperature, T A [ C]

Figure 10. Average Rectified Current (IF(AV))

versus Ambient Temperature (TA)

Figure 9. Reverse Recovery Time vs

Reverse Recovery Current

500

Power Dissipation, PD [mW]

Reverse Recovery Time [nS]

400

DO-35 Pkg
300

SOT-23 Pkg
200

100

0
0

50

100

150

200

Average Temperature, IO [ C]

Figure 11. Power Derating Curve

BAV19/20/21, Rev. C

BAV19 / BAV20 / BAV21

Small Signal Diode

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

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This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
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Rev. H4