化工月刊 14年04月

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SAINT-GOBAIN
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Spring-fnergized SeaLs
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Tiwnium GR.I
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Viton(FKM)
KAORI HEAT TREATMENT CO. , LTD

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03-452.7005 852. 233
03-4 53.5021 1_ 03-453.5931
E-rnail : jim-tsai@kaori m.tw. afra@ m. 1w
www.kaor i. com.lw
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28
Contents
No.253Ap 2Q 1~
47
nnouncement
48
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92
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BP
149
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58
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59
2014 5-6
161
20147-8
172
11 E
13
138
()
Inforrnation
164
/
68
/
'
28
Contents
No.253Ap 2Q 1~
47
nnouncement
48
/
60 -.
74 CIGS LED
92
/
/i
150 -
27
...
109
BP
149
173
162
14
58
/;
59
2014 5-6
161
20147-8
172
11 E
13
138
()
Inforrnation
164
/
68
/
2014
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20144
7.
'p ril
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AR
: processing-microstructure-property
/
/
innovation
microstructure(
property
processing-property
'
microstructure
( (cost/performance)
mlcrostnure-property{
trial-and- error
(N iFe)
1 l
UI! processing
(microstructure)
property
property
tap density (XRD)
curiosity
processl
mlcrostructure-property
Ni(OH)
UI!
processing -mcrostructure-property
Processing
tap
density
48
Il< 224
20144
49
'p ril
,-m
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AR
: processing-microstructure-property
/
/
innovation
microstructure(
property
processing-property
'
microstructure
( (cost/performance)
mlcrostnure-property{
trial-and- error
(N iFe)
1 l
UI! processing
(microstructure)
property
property
tap density (XRD)
curiosity
processl
mlcrostructure-property
Ni(OH)
UI!
processing -mcrostructure-property
Processing
tap
density
48
Il< 224
20144
49
"
~I
pr ing
mlcrostructure
property
("
NiOOH
-Ni(OH)
{)
(cS llite size)
(tap density )
-Ni(OH)
mistructu
property
PK
ation
pro ing
()
(). "
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-Ni(OH)
-NiOOH'
processmg-property
y-NiOOH'
trial-and-error
. a-Ni(OH) iJ
I:
Discharge
Bode cycle
y-NiOOH' -NiOOH
{3.4 1 "
NH OH
-Ni(OH) ' y-NiOOH
a-Ni(OH)
-Ni(OH)
-Ni(OH) ;
Mg(OH)
1 I
50
y-NiOOH
turbostratic(
433 mAh289
"
) 2
mAhl
a-Ni(OH)
Fe/Co/Mn/AI
WJ
81!
224
20144
51
"
~I
pr ing
mlcrostructure
property
("
NiOOH
-Ni(OH)
{)
(cS llite size)
(tap density )
-Ni(OH)
mistructu
property
PK
ation
pro ing
()
(). "
Charge
-Ni(OH)
-NiOOH'
processmg-property
y-NiOOH'
trial-and-error
. a-Ni(OH) iJ
I:
Discharge
Bode cycle
y-NiOOH' -NiOOH
{3.4 1 "
NH OH
-Ni(OH) ' y-NiOOH
a-Ni(OH)
-Ni(OH)
-Ni(OH) ;
Mg(OH)
1 I
50
y-NiOOH
turbostratic(
433 mAh289
"
) 2
mAhl
a-Ni(OH)
Fe/Co/Mn/AI
WJ
81!
224
20144
51
2DI
Ap,u
AVCO
2-3m
sphere
346
1 .7
270-284
6
7
1 m
70'C
Ni(SO,),1 DPE-31 KOH , 1.2 M

Ni(SO,)j NH
50'C
Zn/Co
700-800 nm( 2)
inate precipitat melh
Ni(SO,)j PAIV Na
55nm
90.C , 12 hr
Ni(SO,)jNaOH , 1. 5M
20-30 nm
50' C, 5
hr aging
Ni(NO, )jNH,OH , 0.2 M
ny
AIIColYlZn
NiCljNaOH
F1!
co.precipilation m~thod
. mAh/g !
Il
N):'
+2
OH-
N(OH)
, + 6 NH,
( 3)
3N(NH ) ; '
pHfl
NH
NH (
275
pH A
50'C, 16 hr
10m
sphere
260
NaOHpH'
55'C
5-8m
sphere
275
10
7000
( B)
rpm 5 SEM
60-80% '71<
.oHI NaOH
hydrolhenmal
melhod
Ni(NO,)j urea , 0.1 M
160 C, 30 minutes
3-6m
sphere
11
2 3
N(NH );'
Ni(CH ,COO)j L-argininel

NH,OH , I mM
100 'C, 8 h
1-2m
sphere
12
Ni(NO,)j elhylene diaminel

hydrazine , 1 mM
180'C, 12 h
3-5m
sphere
13

()
52
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30 % NH .o H
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processng-property
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processng-mcrostructure
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property
. 2
!i'i 224
20144
(B)SEM
53
2DI
Ap,u
AVCO
2-3m
sphere
346
1 .7
270-284
6
7
1 m
70'C
Ni(SO,),1 DPE-31 KOH , 1.2 M

Ni(SO,)j NH
50'C
Zn/Co
700-800 nm( 2)
inate precipitat melh
Ni(SO,)j PAIV Na
55nm
90.C , 12 hr
Ni(SO,)jNaOH , 1. 5M
20-30 nm
50' C, 5
hr aging
Ni(NO, )jNH,OH , 0.2 M
ny
AIIColYlZn
NiCljNaOH
F1!
co.precipilation m~thod
. mAh/g !
Il
N):'
+2
OH-
N(OH)
, + 6 NH,
( 3)
3N(NH ) ; '
pHfl
NH
NH (
275
pH A
50'C, 16 hr
10m
sphere
260
NaOHpH'
55'C
5-8m
sphere
275
10
7000
( B)
rpm 5 SEM
60-80% '71<
.oHI NaOH
hydrolhenmal
melhod
Ni(NO,)j urea , 0.1 M
160 C, 30 minutes
3-6m
sphere
11
2 3
N(NH );'
Ni(CH ,COO)j L-argininel

NH,OH , I mM
100 'C, 8 h
1-2m
sphere
12
Ni(NO,)j elhylene diaminel

hydrazine , 1 mM
180'C, 12 h
3-5m
sphere
13

()
52
tll1
N(NO )6H O 28-
30 % NH .o H
[N(NH) l"{
F!!:
Iry-and-e rror
NaOH AI(NO)3I(
processng-property
i; AI(OH)4
processng-mcrostructure
) ; 90.C
property
. 2
!i'i 224
20144
(B)SEM
53
1M KOH
0.5C
( B) pH
11 4 1 pH - 12 '
6 50
60.C 2-3
m
()
SEM54
(-Ni(OH)TEM
NaOH
100 % .
4 XRD
a-Ni(OH)B
Inew 3h - 2 rawl
[12hr. rawl12hr
500
38-0715> Ni(OH) 1 0.75H O - Nickel Hydroxide Hydrate
Tap densityjj(A B*tl
1.25
27
1.13g/cm'
1.41
72%
5% () 20%
Charge
jscharge
2%PTFE I%CMC
CV 1680 mV
CC 500 mA
f( nickel foamJ
240 min
300min
< 500 mA
<600 mV
450
4
quqd
(E2U)
2
-zo-c-
OODD
505o
10
20
70
Two - Thets (deg)

4
54
XRDAB
Ili. 224
85
20144
l\( B) m SEM ()
55
1M KOH
0.5C
( B) pH
11 4 1 pH - 12 '
6 50
60.C 2-3
m
()
SEM54
(-Ni(OH)TEM
NaOH
100 % .
4 XRD
a-Ni(OH)B
Inew 3h - 2 rawl
[12hr. rawl12hr
500
38-0715> Ni(OH) 1 0.75H O - Nickel Hydroxide Hydrate
Tap densityjj(A B*tl
1.25
27
1.13g/cm'
1.41
72%
5% () 20%
Charge
jscharge
2%PTFE I%CMC
CV 1680 mV
CC 500 mA
f( nickel foamJ
240 min
300min
< 500 mA
<600 mV
450
4
quqd
(E2U)
2
-zo-c-
OODD
505o
10
20
70
Two - Thets (deg)

4
54
XRDAB
Ili. 224
85
20144
l\( B) m SEM ()
55
Jg
chtstrukturen mit brucithnlichen
density spherical and non-spherical
Schichtionen [Me(I1) l-xMe(III)x(OH),]
Ni(OH), as cathode materials for nickel-
x-, 24 (1970) , 99-113.
metal hydride batteries , Journal of
42
OODOOOO
3332222
(
E
)bU
sample1
[4]P. Axmann , O. Glemser , Nickel
Itap densityl XRD
hydroxide as a matrix for unusual
[9]X. Yue , J. Pan , Y. Sun , Z. Wang ,
valencies: the electrochemical behavior
Synthesis and electrochemical properties
processmg
of metal (III) - ion - substituted nickel
of nano-micro
- microstructure - property
hydroxides of pyroaurite type , Journal
with super high charge-discharge speed,
of AlI oys and Compounds , 246 (1997) ,
lndustrial & Engineering Chemistry
232-24 1.
Research 51 (2012) , 8358-8365.
8642
SEM
200
sample2
10
20 30
Cycle
40
50
60
[1 0]W. Zhang , W.
spherical -Ni(OH)
Jia
L. Yu , Z. W.
performance of multi-element
doped
Hydrogen Energy 34 (2009) , 473-780.
cyc1 e 330 mAhl
iJ
nickel hydroxide prepared by supersonic
[1I ]Z. Zhu , Y. Zhang , Y. Zhang , H. Liu , C
co-precipitation method. Journal of
Zhu , Y. Wu , PEG-directed microwave-
A lI oys and Compounds , 509 (2011) ,
assisted hydrothermal synthesis
7034-7037.
of spherical Ni(OH ), and NiO
300 mAh/g 10% '20 cyc1 e

$iJ
H.Z. Zheng , Electrochemical
[6]Y. Wang , D. Cao , G.
Wa
J. Wen , J.
Xia , M. Yang , International Joumal of
architectures , Ceramics International
Co(OH)
[I]H. Bode , K. Dehmelt , J. Witte ,
Yin , Spherical c1 usters of -Ni(OH)
CoOOH
Zur kenntis der nickeldydro-
nanosheets supported on nickel foam
[12]Y. C. Chen , F. C. Zheng , Y. L. Min ,
11
xidelektrode 1
Uber das nickel
for nickel metal hydride battery.
T. Wao , Y. X. Wang , Y. G. Zhang ,
(11) hydroxiddydrat , Electrochimica
Electrochimica Acta , 56 (2011) , 8285-
One pot synthesis of Ag/Ni(OH) ,
Acta , 11 (1966) , 1079-1087.
8290.
flower microspheres with enhanced
ill
39 (2013) , 2567-2573
[2]R. L. Doyle , I.J. Godwin , M.P.
[7] Y. Kim , D. Kim , Synthesis of high-
photocatalytic perfo m1 ance , Colloids
processing - micros
Brandon , M.E.G. Lyons , Redox
density nickel cobalt aluminum hydro-
and Surfaces A: Physicochemical and
tructure - property
and electrochemical water splitting
xide by continuous co-precipitation
Engineering Aspects 395 (2012) , 125-
property
catalytic properties of hydrated
method , Applied Materials &
l microstructure
metal oxide modified electrodes ,
4 (2012) , 586-589.
Phys. Chem. Chem. Phys. 15
(2013) , 13737-13783.
processing
56
[5]Z.J. Zhang , Y.J. Zhu , J. Bao , X.R.
Power Sources 196 (2011) , 7797-7805.
[3]R. A lI mann , Chimia , Doppelschi-
224
Interfac
130.
[13]M. Salavati-Niasari , M. Entesari ,
[8]E. Shangguan, Z. Chang, H. Tang , X. Z.
Controlled synthesis of sphericalaNi
Yuan , H. Wang , Comparative structural
(OH) hierachical nanostructures via a
and electrochemical study of high-
simple hydrothe m1 al process and their
20144
!>l
Jg
chtstrukturen mit brucithnlichen
density spherical and non-spherical
Schichtionen [Me(I1) l-xMe(III)x(OH),]
Ni(OH), as cathode materials for nickel-
x-, 24 (1970) , 99-113.
metal hydride batteries , Journal of
42
OODOOOO
3332222
(
E
)bU
sample1
[4]P. Axmann , O. Glemser , Nickel
Itap densityl XRD
hydroxide as a matrix for unusual
[9]X. Yue , J. Pan , Y. Sun , Z. Wang ,
valencies: the electrochemical behavior
Synthesis and electrochemical properties
processmg
of metal (III) - ion - substituted nickel
of nano-micro
- microstructure - property
hydroxides of pyroaurite type , Journal
with super high charge-discharge speed,
of AlI oys and Compounds , 246 (1997) ,
lndustrial & Engineering Chemistry
232-24 1.
Research 51 (2012) , 8358-8365.
8642
SEM
200
sample2
10
20 30
Cycle
40
50
60
[1 0]W. Zhang , W.
spherical -Ni(OH)
Jia
L. Yu , Z. W.
performance of multi-element
doped
Hydrogen Energy 34 (2009) , 473-780.
cyc1 e 330 mAhl
iJ
nickel hydroxide prepared by supersonic
[1I ]Z. Zhu , Y. Zhang , Y. Zhang , H. Liu , C
co-precipitation method. Journal of
Zhu , Y. Wu , PEG-directed microwave-
A lI oys and Compounds , 509 (2011) ,
assisted hydrothermal synthesis
7034-7037.
of spherical Ni(OH ), and NiO
300 mAh/g 10% '20 cyc1 e

$iJ
H.Z. Zheng , Electrochemical
[6]Y. Wang , D. Cao , G.
Wa
J. Wen , J.
Xia , M. Yang , International Joumal of
architectures , Ceramics International
Co(OH)
[I]H. Bode , K. Dehmelt , J. Witte ,
Yin , Spherical c1 usters of -Ni(OH)
CoOOH
Zur kenntis der nickeldydro-
nanosheets supported on nickel foam
[12]Y. C. Chen , F. C. Zheng , Y. L. Min ,
11
xidelektrode 1
Uber das nickel
for nickel metal hydride battery.
T. Wao , Y. X. Wang , Y. G. Zhang ,
(11) hydroxiddydrat , Electrochimica
Electrochimica Acta , 56 (2011) , 8285-
One pot synthesis of Ag/Ni(OH) ,
Acta , 11 (1966) , 1079-1087.
8290.
flower microspheres with enhanced
ill
39 (2013) , 2567-2573
[2]R. L. Doyle , I.J. Godwin , M.P.
[7] Y. Kim , D. Kim , Synthesis of high-
photocatalytic perfo m1 ance , Colloids
processing - micros
Brandon , M.E.G. Lyons , Redox
density nickel cobalt aluminum hydro-
and Surfaces A: Physicochemical and
tructure - property
and electrochemical water splitting
xide by continuous co-precipitation
Engineering Aspects 395 (2012) , 125-
property
catalytic properties of hydrated
method , Applied Materials &
l microstructure
metal oxide modified electrodes ,
4 (2012) , 586-589.
Phys. Chem. Chem. Phys. 15
(2013) , 13737-13783.
processing
56
[5]Z.J. Zhang , Y.J. Zhu , J. Bao , X.R.
Power Sources 196 (2011) , 7797-7805.
[3]R. A lI mann , Chimia , Doppelschi-
224
Interfac
130.
[13]M. Salavati-Niasari , M. Entesari ,
[8]E. Shangguan, Z. Chang, H. Tang , X. Z.
Controlled synthesis of sphericalaNi
Yuan , H. Wang , Comparative structural
(OH) hierachical nanostructures via a
and electrochemical study of high-
simple hydrothe m1 al process and their
20144
!>l
2014 |||||| |
conversion to NiO , Polyhedron 33
.....EE--...nnz2.2.2.zzzzz

- -
(2012) , 302-309.
@
@
@
: 1
[14]0. A. Parks , The isoelectric points of
2.
solid oxides , solid hydroxides and
3 1GE
aqueous hydroxo complex systems ,
4
5
Chemical Reviews , 65 (1965) , 177-
198
[l 5]M. Oshitani , H. Yufu , K.

S. Tsuji , Y.
Matsuman
Takashim
Development
of a pasted nickel electrode with high
lU1\
active material utilization , Journal
FFhtKM SH
2 Hgann
T &
-
of the Electrochemical Society 136

(1989) , 1590-1593.
(biochemistry) E

()
~lii
--------- - -
2 Highughput Screening a
3 Quality
by Design
4. Process Analytical Technology
5 Continuous Process
DO DO
"Iearn-before-doing"
"Iearn-while-doing"
l::emrnl
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mmmpc com
High-Throughput
Screening Quality
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by
Design Process
Technology Continuous Process
5B
22 4
2014 |||||| |
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- -
(2012) , 302-309.
@
@
@
: 1
2.
3 1GE
4
5
198

S. Tsuji , Y.
Matsuman
Takashim
Development
lU1\
FFhtKM SH
2 Hgann
T &
-

(1989) , 1590-1593.
(biochemistry) E

()
~lii
--------- - -
3 Quality
by Design
DO DO
"Iearn-while-doing"
l::emrnl
F..iam..11 6
mmmpc com
High-Throughput
Screening Quality
"
Analytical
by
Design Process
5B
22 4
2014 |||||| |
.....EE--...nnz2.2.2.zzzzz

- -
(2012) , 302-309.
@
@
@
: 1
2.
3 1GE
4
5
198

S. Tsuji , Y.
Matsuman
Takashim
Development
lU1\
FFhtKM SH
2 Hgann
T &
-

(1989) , 1590-1593.
(biochemistry) E

()
~lii
--------- - -
3 Quality
by Design
DO DO
"Iearn-while-doing"
l::emrnl
F..iam..11 6
mmmpc com
High-Throughput
Screening Quality
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Analytical
by
Design Process
5B
22 4
j fl;
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1E
(pyrolysis) (CVD)
( 5-6
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thermal conductivity composite
material)
(SHS)
i (classical high temperare routes) ,
((l))-(
(2)) -( (3)) (1.1 1
,o (T=900.C) (1)
Na2Bp + 2NH
,Cl + N
2
N + CO + H O
EU
(2)
H)
CG
1)
4BN +2NaCI
(T>IOOO'C)
(
)[ .17 1
B20 ,+ 2NH 3 2BN + 3H
Borovinskaya[ l8.
19 )
1 kW 20sec
B,03 + 3CaB 6 + ION
10 79% '
(T>1500'C)
20BN +3CaO
) (>6
MPa) ,
(4)
f 30%
m'l
g l
300-400'C
60
( 2
f!l;
11 y
(1. 5 MPa) 80%
16 m'lg 162
(boron
nitride , BN)
(h-BN) (c-BN) (c-BN)
eV)
224
m 2 /g
6 MPa'
30%
80%
(solid-state
15 m 2
2014 4
metathesis)
'
61
j fl;
"A fI..rl 1
1E
(pyrolysis) (CVD)
( 5-6
(1 -31
(BN)
(high
thermal conductivity composite
material)
(SHS)
i (classical high temperare routes) ,
((l))-(
(2)) -( (3)) (1.1 1
,o (T=900.C) (1)
Na2Bp + 2NH
,Cl + N
2
N + CO + H O
EU
(2)
H)
CG
1)
4BN +2NaCI
(T>IOOO'C)
(
)[ .17 1
B20 ,+ 2NH 3 2BN + 3H
Borovinskaya[ l8.
19 )
1 kW 20sec
B,03 + 3CaB 6 + ION
10 79% '
(T>1500'C)
20BN +3CaO
) (>6
MPa) ,
(4)
f 30%
m'l
g l
300-400'C
60
( 2
f!l;
11 y
(1. 5 MPa) 80%
16 m'lg 162
(boron
nitride , BN)
(h-BN) (c-BN) (c-BN)
eV)
224
m 2 /g
6 MPa'
30%
80%
(solid-state
15 m 2
2014 4
metathesis)
'
61
"
ApJ'!.!
MPa)
(<1
CC)
(W/m K)
20
220
----
I -260
B.O
5iC
Si)N
5iO()
5iO(..)
2050
2530
2500
2800
1700
170
25 I
250
9C210
30
1. 3
( 10W/m*K)
4044
75
3.1
3.0
15
0.5
10"
10"
3.8-5 .4
3.9
2:64
2.20
9-
310
73
67-71
10 11
(Ohm'cm)
l
(RT-1MHz)
(g/cm')
(GPa)
4.1
101
auou
10 1
> 10"
:>1
aong
1.90
3.26
3.89
12
20
43
331
345
(ppmrc)
0.25W/m*K[ 23)
10 1 4
12
15
LED 90.C .
(AIN) (BeO) (SiC)
l 1
T&
T&
(polyimide PI)
1/ \0
i'i (phenolics) (silicones)
(epoxy)
(GPa)
+s
-uq
r
drhU
20144
ANA
2HHa
O+402
H 3
O+MH-H
H{ N
(
)
(
)
(
)
++O
'N+
r
224
1241 :
qO
62
2600
----
AIO
AIN
fif
0.15-
h-BN
"
ApJ'!.!
MPa)
(<1
CC)
(W/m K)
20
220
----
I -260
B.O
5iC
Si)N
5iO()
5iO(..)
2050
2530
2500
2800
1700
170
25 I
250
9C210
30
1. 3
( 10W/m*K)
4044
75
3.1
3.0
15
0.5
10"
10"
3.8-5 .4
3.9
2:64
2.20
9-
310
73
67-71
10 11
(Ohm'cm)
l
(RT-1MHz)
(g/cm')
(GPa)
4.1
101
auou
10 1
> 10"
:>1
aong
1.90
3.26
3.89
12
20
43
331
345
(ppmrc)
0.25W/m*K[ 23)
10 1 4
12
15
LED 90.C .
(AIN) (BeO) (SiC)
l 1
T&
T&
(polyimide PI)
1/ \0
i'i (phenolics) (silicones)
(epoxy)
(GPa)
+s
-uq
r
drhU
20144
ANA
2HHa
O+402
H 3
O+MH-H
H{ N
(
)
(
)
(
)
++O
'N+
r
224
1241 :
qO
62
2600
----
AIO
AIN
fif
0.15-
h-BN
lIl1I
()/
51 %
Agari l2
/PE
PE
1.
/PE . Jt
: 1
: 3 : 3.5 : 3.5)
/PE
X-ray
( 350.C) .
//
()
1.7
TTP
20
(.
UI! 3 :
l 4)
70.C 2
! 35mesh
175.C 50
(37 %
61% 1
1) (
2:: 1 :
3 : 1. 5 P N2 = 0 .45 MPa
Jt
Nga
- BMN
o
d
(a)
kg/cm 3
' .\
(b)
(NDD).
(ODF).
20
25
30
35
40
45
50
55
60
2 (degree)
22 4
1 : 3.5 : 1. 5 P N2 = 0 .4 5 MPa
(
0
).
3 ::
(Mg) (NH 4 C1)(NaN )
1850.C 1300.C .
1 (::
bacBE
ZEE
(Bo)
64
20144!L'1
XRD (a) (b)
65
lIl1I
()/
51 %
Agari l2
/PE
PE
1.
/PE . Jt
: 1
: 3 : 3.5 : 3.5)
/PE
X-ray
( 350.C) .
//
()
1.7
TTP
20
(.
UI! 3 :
l 4)
70.C 2
! 35mesh
175.C 50
(37 %
61% 1
1) (
2:: 1 :
3 : 1. 5 P N2 = 0 .45 MPa
Jt
Nga
- BMN
o
d
(a)
kg/cm 3
' .\
(b)
(NDD).
(ODF).
20
25
30
35
40
45
50
55
60
2 (degree)
22 4
1 : 3.5 : 1. 5 P N2 = 0 .4 5 MPa
(
0
).
3 ::
(Mg) (NH 4 C1)(NaN )
1850.C 1300.C .
1 (::
bacBE
ZEE
(Bo)
64
20144!L'1
XRD (a) (b)
65
5:::
15%
70"
--
120
60
1750
100
Q>
80
40 '1
II!J
'-
30
(U
)
nnunu
6
5
4
5
5
5
1
1
1
50
62%
1850
140
40
1350
h
2
.J
1250
()
70
170
\T
0.2MPa
0 .4 5 MPa 72 % 79%
4:: 1 :
76%
140m'fg45 m'fg
6 6a
'
16 m'
40 m'f 6c 112 m'/g 6d 166 m'/
Jt 2
g 16
1600 C .
166 m1(001)
250
30
1650
'
_ l.~ _
90
6-
\T
()
1450
!ll!
1350
20
>:
50
.-
"^
~
/A
-A..A.
;>/
1600
10
80
()
15
1400
60
.....~
45
1250
1150
35
()
.3
66
1700
/~ y
:.... ,....-1...
40
* -
30
140
120
.60_ .6,
'
"'~
10
1800
65
55
160
bl
- 6.
70
\T
i\T
Q>
{d
b
)
110
J e
1550
40
85
130
79 % 115 m'/g
75
50
3.5: 3.5 P N - 0 .4 5 MPa
1750
150
i+
60
3 .5
: 3.5 : 3.5 :
20
20
20144
1200
{)
22 4
1300
67
5:::
15%
70"
--
120
60
1750
100
Q>
80
40 '1
II!J
'-
30
(U
)
nnunu
6
5
4
5
5
5
1
1
1
50
62%
1850
140
40
1350
h
2
.J
1250
()
70
170
\T
0.2MPa
0 .4 5 MPa 72 % 79%
4:: 1 :
76%
140m'fg45 m'fg
6 6a
'
16 m'
40 m'f 6c 112 m'/g 6d 166 m'/
Jt 2
g 16
1600 C .
166 m1(001)
250
30
1650
'
_ l.~ _
90
6-
\T
()
1450
!ll!
1350
20
>:
50
.-
"^
~
/A
-A..A.
;>/
1600
10
80
()
15
1400
60
.....~
45
1250
1150
35
()
.3
66
1700
/~ y
:.... ,....-1...
40
* -
30
140
120
.60_ .6,
'
"'~
10
1800
65
55
160
bl
- 6.
70
\T
i\T
Q>
{d
b
)
110
J e
1550
40
85
130
79 % 115 m'/g
75
50
3.5: 3.5 P N - 0 .4 5 MPa
1750
150
i+
60
3 .5
: 3.5 : 3.5 :
20
20
20144
1200
{)
22 4
1300
67
m
J
='
2HC1 x(g)+2xNa
_..- --(g)
, ,
160
90
80
70
:174
(4
0
)
4.
40 .,
'".
0,1
0, 3
0.4
0,6
0]
0, 8
0, 9
--,
10
,
~ 14
60
T
-,-1.1
-1 40
1 1300
20
1200
1. 2
(a)
200nm
6
(a)16 m'/g (b)40 m' (c)116 m' (d)166
2NaN3(s)
2Na
, ,
-- --(g)
xHCL+B
)' -(
66
(8)
NH.Cl
4 --(s)
(9)
N
H.., + ----(g)
HCl
- ---3(g)
( 1AU)
+ 3N
--
'Z(
BCL_
,
+ H
2
(1 )
2BClx(g)
, ,+ -.-.
2xNa
,,+ N
--(g)
- "2(g)
. tlll(8)-(1 5):
B ,03(') + 3Mg(,) 2B( ,) + 3MgO(,)
m'/g
2BN.(s), + ---2xNaCl
----(5)
(1 2)
2BCl , , + N.. , + ----Z(g)

xH
(
2(g)
2BN (s) + 2xHCl

, ,
-'---~-(g)
(1 3)
22 4
7 (1
( (11)) .
8 15 ) (1 3.6
( (12)
(1)
70vol %
tt
(9) (10))
(MPa)
"
:i
30
( (8))
-1 1600
c>
-1 80
(15)
120
-.-
2()+N(/or NH) 2BN(
(14)
1700
\2
50
140
1800
2xNaCL+H
--2(g)
---- ----(s)
{|
3.5 4 fl!
25
80vol% . 1
3.5
-3
(8 15 ) .
80 vo
{ 70 vol%
(4 5 5.5
3.8 4.2 W/mK'
W/mK 0
WlmK
5 3 3.5 4
2 3.5
20f
20144
69
m
J
='
2HC1 x(g)+2xNa
_..- --(g)
, ,
160
90
80
70
:174
(4
0
)
4.
40 .,
'".
0,1
0, 3
0.4
0,6
0]
0, 8
0, 9
--,
10
,
~ 14
60
T
-,-1.1
-1 40
1 1300
20
1200
1. 2
(a)
200nm
6
(a)16 m'/g (b)40 m' (c)116 m' (d)166
2NaN3(s)
2Na
, ,
-- --(g)
xHCL+B
)' -(
66
(8)
NH.Cl
4 --(s)
(9)
N
H.., + ----(g)
HCl
- ---3(g)
( 1AU)
+ 3N
--
'Z(
BCL_
,
+ H
2
(1 )
2BClx(g)
, ,+ -.-.
2xNa
,,+ N
--(g)
- "2(g)
. tlll(8)-(1 5):
B ,03(') + 3Mg(,) 2B( ,) + 3MgO(,)
m'/g
2BN.(s), + ---2xNaCl
----(5)
(1 2)
2BCl , , + N.. , + ----Z(g)

xH
(
2(g)
2BN (s) + 2xHCl

, ,
-'---~-(g)
(1 3)
22 4
7 (1
( (11)) .
8 15 ) (1 3.6
( (12)
(1)
70vol %
tt
(9) (10))
(MPa)
"
:i
30
( (8))
-1 1600
c>
-1 80
(15)
120
-.-
2()+N(/or NH) 2BN(
(14)
1700
\2
50
140
1800
2xNaCL+H
--2(g)
---- ----(s)
{|
3.5 4 fl!
25
80vol% . 1
3.5
-3
(8 15 ) .
80 vo
{ 70 vol%
(4 5 5.5
3.8 4.2 W/mK'
W/mK 0
WlmK
5 3 3.5 4
2 3.5
20f
20144
69
12
E
~ 8
=Z
s
=
__
I
BN1~m
____ BN
BN
__
8~m
15m
E
O
3.84.2 W/mK'
Acta , 434-157 (2005)
AIN
Goutaudier; B. Bonnetot, "High Surface
and High Nanoporosity Boron Nitride
Adapted to Hydrogen Sequestration" ,
Materials Science Forum , 555 , 355-362
13.6~m
(2007).
E 1
[7]M. Zheng;Y. Liu;Y. Gu;Z. Xu ,

"Synthesis and characterization of boron
filler nl0nl(%)
[6] L. Laversenne;S. Miljani;P. Miele;C
70
combustion catalysts" , Thermochimica
xy
iZ 10
g 6
{ 7 W/mK'
[I]A. Li pp;K. A. Schwetz;K. Hunold ,
nitride sponges as a novel support for
"Hexagonal boron nitride: Fabrication ,
metal nanopartic1es" , Science in China
properties and applications" , Journal of
Series B: Chemistry, 51 , 205-210
the European Ceramic Society, 5 , 3-9
(2008)
(l 989).
[8]Y. Li;J. Zhou;Z. Luo;S. Tung;E.
[2]R. T. Paine;C. K. Narula , "Synthetic
Schneider;J. Wu;X. Li , "Investigation on
routes to boron nitride" , Chemical
two abnormal phenomena about thermal
Reviews , 90 , 73-91 (1990)
conductivity enhancement of BN!EG
[3]Y. Kimura; T. Wakabayashi;K. Okada;T
( l
Wada;H. Nishikawa , "Boron nitride as a
) 13.6
lubricant additive" , Wear, 232 , 199-206
(l 999).
i60 vol%
(8 15 )
nanoftuids" , Nanoscale research letters ,

6 , 443 (2011)
[9]G. Lian;X. Zhang;S. Zhang;D. Liu;D.

Cui;Q. Wang , "Controlled fabrication
[4]R. Ma;Y. Bando;T. Sato;D. Golberg;H
of ultrathin-shell BN hollow spheres
Zhu;C. Xu;D. Wu , "Synthesis of boron
with excellent performance in hydrogen
( 1.0 MPa)
nitride nanofibers and measurement
storage and wastewater treatment" ,
(79%)( 170
m'l
of their hydrogen uptake capacity" ,
Energy & Environmental Science , 5 ,
60 vol%
g)
Applied Physics Letters , 81 , 5225
7072 (2012)
70
(2002).
vol%7W/mK'
60 vol%
4.5 5.5 WI
mK'
60 vol%
22 4
[IO] L. Wang; L. Shen;X. Xu; L. Xu;Y. Qian ,
[5]G. Postole;M. Caldararu;N. 1. 10nescu; B.
"Facile synthesis of uniform h-BN
Bonnetot;A. Auroux;C. Guimon , "Boron
nanocrystals and their application as a
nitride: A high potential support for
catalyst support towards the selective
20144
71
12
E
~ 8
=Z
s
=
__
I
BN1~m
____ BN
BN
__
8~m
15m
E
O
3.84.2 W/mK'
Acta , 434-157 (2005)
AIN
Goutaudier; B. Bonnetot, "High Surface
and High Nanoporosity Boron Nitride
Adapted to Hydrogen Sequestration" ,
Materials Science Forum , 555 , 355-362
13.6~m
(2007).
E 1
[7]M. Zheng;Y. Liu;Y. Gu;Z. Xu ,

"Synthesis and characterization of boron
filler nl0nl(%)
[6] L. Laversenne;S. Miljani;P. Miele;C
70
combustion catalysts" , Thermochimica
xy
iZ 10
g 6
{ 7 W/mK'
[I]A. Li pp;K. A. Schwetz;K. Hunold ,
nitride sponges as a novel support for
"Hexagonal boron nitride: Fabrication ,
metal nanopartic1es" , Science in China
properties and applications" , Journal of
Series B: Chemistry, 51 , 205-210
the European Ceramic Society, 5 , 3-9
(2008)
(l 989).
[8]Y. Li;J. Zhou;Z. Luo;S. Tung;E.
[2]R. T. Paine;C. K. Narula , "Synthetic
Schneider;J. Wu;X. Li , "Investigation on
routes to boron nitride" , Chemical
two abnormal phenomena about thermal
Reviews , 90 , 73-91 (1990)
conductivity enhancement of BN!EG
[3]Y. Kimura; T. Wakabayashi;K. Okada;T
( l
Wada;H. Nishikawa , "Boron nitride as a
) 13.6
lubricant additive" , Wear, 232 , 199-206
(l 999).
i60 vol%
(8 15 )
nanoftuids" , Nanoscale research letters ,

6 , 443 (2011)
[9]G. Lian;X. Zhang;S. Zhang;D. Liu;D.

Cui;Q. Wang , "Controlled fabrication
[4]R. Ma;Y. Bando;T. Sato;D. Golberg;H
of ultrathin-shell BN hollow spheres
Zhu;C. Xu;D. Wu , "Synthesis of boron
with excellent performance in hydrogen
( 1.0 MPa)
nitride nanofibers and measurement
storage and wastewater treatment" ,
(79%)( 170
m'l
of their hydrogen uptake capacity" ,
Energy & Environmental Science , 5 ,
60 vol%
g)
Applied Physics Letters , 81 , 5225
7072 (2012)
70
(2002).
vol%7W/mK'
60 vol%
4.5 5.5 WI
mK'
60 vol%
22 4
[IO] L. Wang; L. Shen;X. Xu; L. Xu;Y. Qian ,
[5]G. Postole;M. Caldararu;N. 1. 10nescu; B.
"Facile synthesis of uniform h-BN
Bonnetot;A. Auroux;C. Guimon , "Boron
nanocrystals and their application as a
nitride: A high potential support for
catalyst support towards the selective
20144
71
~"
oxidation of benzyl alcohol" , RSC
electronic and optoelectronic
of Materials
Advances , 2, 10689 (2012)
applications" , Proceedings of the
(2000)
[ll]X. Wang;A. Pakdel;J. Zhang;Q.
[27] Y. Hashizume;M. Uenishi;T. Yokote ,

U.S. , 1990
[25]H. B. Shan; Y. Zhu;Z. T.
Zhan
[28] W.
Zh ;S.
Qi;H. Li;S. Shao , "Study on
Weng;T. Zhai;C. Zhi;D. Golberg; Y.
[17]G. Ciofani;V. Raffa;J. Yu; Y. Chen;Y.
"Surface treatment and hydrolysis
insulating thermal conductive BNIHDPE
Bando , "Large-surface-area BN
Obata;S. Takeoka;A. Menciassi;A
kinetics of organic films coated
composites" , Thermochimica Acta , 452 ,
nanosheets and their utilization in
Cuschieri, "Boron Nitride Nanotubes:
AIN powder" , British Ceramic
36-42 (2007)
polymeric composites with improved
A Novel Vector for Targeted Magnetic
Transactions, 98 , 146-150 (1 999).
thermal and dielectric properties" ,
Drug Delivery" , Current Nanoscience ,
Nanoscale research letters , 7 , 662
5, 33-38 (2009).
[1 8] 1. P.
(2012)
[12]C. Tang;Y. Bando;C. Li u;S. Fan;J.
[26] 1. Ganesh;N. Thiyagarajan;G.

Sundarar an;S.
Borovinskaya;1.
Vershinnikov;A.
Wang;T. Iizuka;M. Kozako; Y. Ohki;T.
Tanaka , "Development of epoxy/BN
M. Olhero;J. M. F.
composites with high thermal con-
"A non-aqueous processing
ductivity and sufficient dielectric break-
route for phosphate-protection of
down strength partI - sample preparations
Ferrei
G. Merzhanov, 1999
[2Z.
Zhang;X. Ding;D. Golberg , "Thermal
[19] 1. P. Borovinskaya , "Preparation of
AIN powder against hydrolysis" ,
and thermal conductivity" , IEEE
conductivity of nanostructured boron
ultrafine boron nitride powders by
Journal of the European Ceramic
Transactions on Dielectrics and Electrical
nitride materials" , The journal of
self-propagating high temperature
Society
Insulation , 18 , 1963-1972 (20 11)
physical chemistry. B , 110 , 10354-
synthesis.pdf 1norganic
10357 (2006).
39 , 588-593 (2003).
[1 R.
Zhl T.
[20]C.-C. Hwang;S.- L. Chung , "Com-
Xu;D. Wu , "Hydrogen Uptake in
bustion synthesis of boron nitride
Boron Nitride Nanotubes at Room
powder" , Journal of Materials
Temperature" , J. Am. Chem. Soc. , 124,
Research , 13 , 680-686 (1998).

[21]P. A. Hochstein , U.S. , 5857767, 1999.
[14]D. Golberg;Y. Bando;Y. Huang;T

Terao;M. Mitome;C. Tang;C. Zhi ,
[2 H.
Lee;K. Neville , "Handbook of
Epoxy Resins" , Joumal , (1 967).
"Boron nitride nanotubes and
[23]K. W. Garrett;H. M. Rosenberg , "The
nanosheets" , ACS nano , 4 , 2979-2993
thermal conductivity of epoxy-resinl
(2010)
powder composite materials" , Joumal
[15]C. Jacobsen , "Boron Nitride: A

Novel Support for
2281-2288 (2008).
Materials ,
Sato;C.
Ma;Y. Bando;H.
7672-7673 (2002).
RutheniumBased
Ammonia Synthesis Catalysts" ,

Joumal ofCatalysis, 200, 1-3 (2001).
[16]R. F. Davis , "111- V nitrides for
72
IEEE , 79, 702-712 (1991).
Science 2743-2748
of Physics D . Applied Physics , 7 ,
1247-1258 (1 974).
[24]S. Fukumoto;T. Hookabe;H. Tsubakino ,
"Hydrolysis behavior of aluminum
Il itride
in various solutions" , Joumal
224
20144
73
~"
oxidation of benzyl alcohol" , RSC
electronic and optoelectronic
of Materials
Advances , 2, 10689 (2012)
applications" , Proceedings of the
(2000)
[ll]X. Wang;A. Pakdel;J. Zhang;Q.
[27] Y. Hashizume;M. Uenishi;T. Yokote ,

U.S. , 1990
[25]H. B. Shan; Y. Zhu;Z. T.
Zhan
[28] W.
Zh ;S.
Qi;H. Li;S. Shao , "Study on
Weng;T. Zhai;C. Zhi;D. Golberg; Y.
[17]G. Ciofani;V. Raffa;J. Yu; Y. Chen;Y.
"Surface treatment and hydrolysis
insulating thermal conductive BNIHDPE
Bando , "Large-surface-area BN
Obata;S. Takeoka;A. Menciassi;A
kinetics of organic films coated
composites" , Thermochimica Acta , 452 ,
nanosheets and their utilization in
Cuschieri, "Boron Nitride Nanotubes:
AIN powder" , British Ceramic
36-42 (2007)
polymeric composites with improved
A Novel Vector for Targeted Magnetic
Transactions, 98 , 146-150 (1 999).
thermal and dielectric properties" ,
Drug Delivery" , Current Nanoscience ,
Nanoscale research letters , 7 , 662
5, 33-38 (2009).
[1 8] 1. P.
(2012)
[12]C. Tang;Y. Bando;C. Li u;S. Fan;J.
[26] 1. Ganesh;N. Thiyagarajan;G.

Sundarar an;S.
Borovinskaya;1.
Vershinnikov;A.
Wang;T. Iizuka;M. Kozako; Y. Ohki;T.
Tanaka , "Development of epoxy/BN
M. Olhero;J. M. F.
composites with high thermal con-
"A non-aqueous processing
ductivity and sufficient dielectric break-
route for phosphate-protection of
down strength partI - sample preparations
Ferrei
G. Merzhanov, 1999
[2Z.
Zhang;X. Ding;D. Golberg , "Thermal
[19] 1. P. Borovinskaya , "Preparation of
AIN powder against hydrolysis" ,
and thermal conductivity" , IEEE
conductivity of nanostructured boron
ultrafine boron nitride powders by
Journal of the European Ceramic
Transactions on Dielectrics and Electrical
nitride materials" , The journal of
self-propagating high temperature
Society
Insulation , 18 , 1963-1972 (20 11)
physical chemistry. B , 110 , 10354-
synthesis.pdf 1norganic
10357 (2006).
39 , 588-593 (2003).
[1 R.
Zhl T.
[20]C.-C. Hwang;S.- L. Chung , "Com-
Xu;D. Wu , "Hydrogen Uptake in
bustion synthesis of boron nitride
Boron Nitride Nanotubes at Room
powder" , Journal of Materials
Temperature" , J. Am. Chem. Soc. , 124,
Research , 13 , 680-686 (1998).

[21]P. A. Hochstein , U.S. , 5857767, 1999.
[14]D. Golberg;Y. Bando;Y. Huang;T

Terao;M. Mitome;C. Tang;C. Zhi ,
[2 H.
Lee;K. Neville , "Handbook of
Epoxy Resins" , Joumal , (1 967).
"Boron nitride nanotubes and
[23]K. W. Garrett;H. M. Rosenberg , "The
nanosheets" , ACS nano , 4 , 2979-2993
thermal conductivity of epoxy-resinl
(2010)
powder composite materials" , Joumal
[15]C. Jacobsen , "Boron Nitride: A

Novel Support for
2281-2288 (2008).
Materials ,
Sato;C.
Ma;Y. Bando;H.
7672-7673 (2002).
RutheniumBased
Ammonia Synthesis Catalysts" ,

Joumal ofCatalysis, 200, 1-3 (2001).
[16]R. F. Davis , "111- V nitrides for
72
IEEE , 79, 702-712 (1991).
Science 2743-2748
of Physics D . Applied Physics , 7 ,
1247-1258 (1 974).
[24]S. Fukumoto;T. Hookabe;H. Tsubakino ,
"Hydrolysis behavior of aluminum
Il itride
in various solutions" , Joumal
224
20144
73
Aprif
1954 D.M.
Chapin
CIGS LED
[1]
(Silicon-based
cell) (Thin
film solar
cell) (Organic
solar
cell)['
60
(LED)
(CIGS
thin-film solar cell)
5.3x 10 20
(GaAs) (CdTe)
2.1x10 19 2040
(Cu (I n 1.,' G a,) Se )111
8 .4 x 10'0
3.8x10'4
1. 10" 1
19.6%[6]
30
; (Cd)
14
solar
224
20144
15
Aprif
1954 D.M.
Chapin
CIGS LED
[1]
(Silicon-based
cell) (Thin
film solar
cell) (Organic
solar
cell)['
60
(LED)
(CIGS
thin-film solar cell)
5.3x 10 20
(GaAs) (CdTe)
2.1x10 19 2040
(Cu (I n 1.,' G a,) Se )111
8 .4 x 10'0
3.8x10'4
1. 10" 1
19.6%[6]
30
; (Cd)
14
solar
224
20144
15
CIGS
(Donor)
N (N-type
20.8 %
3A
4A 5A 6A
(Hole) . 3
{:
1993 NAKAMURA
(Intrinsic semiconductor)
(Acceptor)
(Extrinsic
(LED)
(P-type semiconductor)
(Light-emitting
Diode, LED)i
P N
4 5
P N
(:)
PN (PN
2 . 'N
(electron) P
(hole) (Space
semiconductor) . 3
junction)
25.0%
15-16%
20.4%
10-14%
-.-.-.
(Monoc slalline)
(Silin.based)
(Polycryslalline)
~-
(Amorphous)
GaAs
(Thin film)
( anic)
76
semiconductor)
(:)
4%
7%
i1lI
28.8%
1 -23%
16.1%
- -

[]
CdTe
19.6%
Cu(lnl_~tGa)Se2
20.8%
10-15%
Dye.sensitized
11 .4%
5-10%
Organic
11. 1%
224
20144
77
CIGS
(Donor)
N (N-type
20.8 %
3A
4A 5A 6A
(Hole) . 3
{:
1993 NAKAMURA
(Intrinsic semiconductor)
(Acceptor)
(Extrinsic
(LED)
(P-type semiconductor)
(Light-emitting
Diode, LED)i
P N
4 5
P N
(:)
PN (PN
2 . 'N
(electron) P
(hole) (Space
semiconductor) . 3
junction)
25.0%
15-16%
20.4%
10-14%
-.-.-.
(Monoc slalline)
(Silin.based)
(Polycryslalline)
~-
(Amorphous)
GaAs
(Thin film)
( anic)
76
semiconductor)
(:)
4%
7%
i1lI
28.8%
1 -23%
16.1%
- -

[]
CdTe
19.6%
Cu(lnl_~tGa)Se2
20.8%
10-15%
Dye.sensitized
11 .4%
5-10%
Organic
11. 1%
224
20144
77
"
Apm
PN
. 3
78
PN
' CIGS)
(Intrinsic zinc oxide)
P :
(Transparent conductive oxide)
(Cu{l n ."Ga) Se
charge region) 3
P-N 50
(Window layer)
(Buffer layer)N a
NP
(Transparent
:N
(Photocurrent) 4
conductive oxide) In03 :
Sn( 0) ZnO : AI(AZO)
(Cadmium sulfide)
(Metal
(Sputter) (Molybdenum)
(Zinc sulfide)(Indium sulfide) ,
chemical vapor deposition , MOCVD)
p PN
ZnO : B(BZO) (Ni)
224
20144
organic
79
"
Apm
PN
. 3
78
PN
' CIGS)
(Intrinsic zinc oxide)
P :
(Transparent conductive oxide)
(Cu{l n ."Ga) Se
charge region) 3
P-N 50
(Window layer)
(Buffer layer)N a
NP
(Transparent
:N
(Photocurrent) 4
conductive oxide) In03 :
Sn( 0) ZnO : AI(AZO)
(Cadmium sulfide)
(Metal
(Sputter) (Molybdenum)
(Zinc sulfide)(Indium sulfide) ,
chemical vapor deposition , MOCVD)
p PN
ZnO : B(BZO) (Ni)
224
20144
organic
79
A II!.:i i
Grid
Anti-reflection layer
{:
CIGS
vmmxImu= ACxE
vm
F. F. =
Transparent conductive oxide (400 nm)
Intrinsic zinc oxide (100 nm)

Buffer layer (50 nm)
(Recombination)
n xA , x E
-:-:-
v" C
[5C
):
'7=
Cu(ln ,a,)Se, (2 -4 m)
Imx:
F .F. xVoc x
[5C
Ac x E
---+
6.
Molybdenum (5 nm)
Substrate
I~
---+
CJGS
(Al)
Vo ISC
V CIGS
(Vol
(Band
(1) (F.F.)
gap , Eg)
voc
1"
(Pm)
(Anti-reflection layer)

P~nv
'7(%)= x
m
V~nv
100%
(1)
Ln
100%
=L x
CIGS
Ac x E
(Fill factor, F.F.)
AM 1.5
(P m ) (Open circuit
2S'C IOOOW/
voltage , Vol (Short circuit
cm'(E)
curre 1sc):

(P)
ao
P=n
...n.... X
v
Jl- t Az!
l n. .
'WI
F.F.= :=L
v" c
[5C
VOC
[5C
22 4
20144
1lI!-
a1
A II!.:i i
Grid
Anti-reflection layer
{:
CIGS
vmmxImu= ACxE
vm
F. F. =
Transparent conductive oxide (400 nm)
Intrinsic zinc oxide (100 nm)

Buffer layer (50 nm)
(Recombination)
n xA , x E
-:-:-
v" C
[5C
):
'7=
Cu(ln ,a,)Se, (2 -4 m)
Imx:
F .F. xVoc x
[5C
Ac x E
---+
6.
Molybdenum (5 nm)
Substrate
I~
---+
CJGS
(Al)
Vo ISC
V CIGS
(Vol
(Band
(1) (F.F.)
gap , Eg)
voc
1"
(Pm)
(Anti-reflection layer)

P~nv
'7(%)= x
m
V~nv
100%
(1)
Ln
100%
=L x
CIGS
Ac x E
(Fill factor, F.F.)
AM 1.5
(P m ) (Open circuit
2S'C IOOOW/
voltage , Vol (Short circuit
cm'(E)
curre 1sc):

(P)
ao
P=n
...n.... X
v
Jl- t Az!
l n. .
'WI
F.F.= :=L
v" c
[5C
VOC
[5C
22 4
20144
1lI!-
a1
':111M
CIGS
CIGS
550.C ' Cu [J Se
Ar ' Ar+
{ Cllxsey
CIGS
Cu-rich ' In
CIGS
Ga Se{
Cu CuGa InGa
(Co-evaporation)
1994
Cus e y CIGS
( 28.C)
(Sputtering)
(NREL)19J
{ Cu-poor ' Cu/
(154.C)
(Three-stage coevaporation)
(In+Ga)=0.8-0.9 f "
(Electrodeoposition) (Spray
: 300
CIGS 19.9 %
pyrolysis) (Nanoparticle
-400.C ' In Ga Se
CIGS
coating) (Solution coating)
(I nGa) Se y f j:
ZSW(Zentrum r
Sonnenenergie-
Culn
und Wasserstoff-Forschung Baden-
Wrttemberg , ZSW, Stut Germany)
Cu
1300-1500'C
In
1000-1200'C
Ga
1150-1250'C
Se
250-380'C
{ (CIG
) (Selenization)
CIGS (Cu/(I n+Ga)=0.8-0.9 Gal
CIGS
(In+Ga)=0.2-0
9 l Se
(Ga grading)(Band
(Se Se)(
CIGS
gap Engineering)
500-550 "C)
CIGS
CIGS
Se
()
Se Se 9
1.
Substrate
Cu , In , Ga , 5e Vapor
( PBN)
2.
7 (Co
(Sputtering)
evaporation)
CIGS
82
20.8%
224
20144
83
':111M
CIGS
CIGS
550.C ' Cu [J Se
Ar ' Ar+
{ Cllxsey
CIGS
Cu-rich ' In
CIGS
Ga Se{
Cu CuGa InGa
(Co-evaporation)
1994
Cus e y CIGS
( 28.C)
(Sputtering)
(NREL)19J
{ Cu-poor ' Cu/
(154.C)
(Three-stage coevaporation)
(In+Ga)=0.8-0.9 f "
(Electrodeoposition) (Spray
: 300
CIGS 19.9 %
pyrolysis) (Nanoparticle
-400.C ' In Ga Se
CIGS
coating) (Solution coating)
(I nGa) Se y f j:
ZSW(Zentrum r
Sonnenenergie-
Culn
und Wasserstoff-Forschung Baden-
Wrttemberg , ZSW, Stut Germany)
Cu
1300-1500'C
In
1000-1200'C
Ga
1150-1250'C
Se
250-380'C
{ (CIG
) (Selenization)
CIGS (Cu/(I n+Ga)=0.8-0.9 Gal
CIGS
(In+Ga)=0.2-0
9 l Se
(Ga grading)(Band
(Se Se)(
CIGS
gap Engineering)
500-550 "C)
CIGS
CIGS
Se
()
Se Se 9
1.
Substrate
Cu , In , Ga , 5e Vapor
( PBN)
2.
7 (Co
(Sputtering)
evaporation)
CIGS
82
20.8%
224
20144
83
"
Ap
2.
Heater
260 nm '
(Nanoparticle
coating) (Ink
30% '
Se/H Se
CIGS' 13.6%1 13
CIGS
{ Se
10 . Solartechnik
CIGS CIGS
Cu S CIGS
RTP 14.5%[
ET(Internation
Solar Electronic
3.
H Se
Technology
(450'C) Hs e CIGS lUi
()
H Se
1.
ppm
(E 1ec trodeop is iti on)
f!
In Ins e
CIGS
In RTP
CIG
In
CIGS
H Se CIGS
84
Process) ,
Inc.)
CuO+ln.O
,-,
pwder
Powdisant+
water mixing 42 hr
ball milllng
Filter
Cu-Se In-Se
Cu In
TSMC Solar Miasole l Showa
Shelllll.121
CIGS
1 1. 2%
Dlor
blading
Selenizat
Repeal3
450'C
15min
mes
10
224
20144
ISET
85
"
Ap
2.
Heater
260 nm '
(Nanoparticle
coating) (Ink
30% '
Se/H Se
CIGS' 13.6%1 13
CIGS
{ Se
10 . Solartechnik
CIGS CIGS
Cu S CIGS
RTP 14.5%[
ET(Internation
Solar Electronic
3.
H Se
Technology
(450'C) Hs e CIGS lUi
()
H Se
1.
ppm
(E 1ec trodeop is iti on)
f!
In Ins e
CIGS
In RTP
CIG
In
CIGS
H Se CIGS
84
Process) ,
Inc.)
CuO+ln.O
,-,
pwder
Powdisant+
water mixing 42 hr
ball milllng
Filter
Cu-Se In-Se
Cu In
TSMC Solar Miasole l Showa
Shelllll.121
CIGS
1 1. 2%
Dlor
blading
Selenizat
Repeal3
450'C
15min
mes
10
224
20144
ISET
85
2013
(Spin coating)
(Screen printing) (Doctor-blade
(Roll
coating)
to-Roll)
CIGS
!!
f crGS
CIGS
CIGS
crGS
IBMI.1 cu8 s rn Se Ga Se
Ga (N H)
400-525'C
crGS
{ 15.2% crGS
11 '
CIGS
Cu2S
In2Se,
Ga+Se
'
\
01 Iveln
N4H.
-~
SelS
Spin ngon
5ubstrate
.',
-
10'/Paally
dEmposep3re50cu.cr
Fllm250-3SO
CIGSFllm
11
86
CrGS
Thicker l
Film
CIGS
IBM
224
crGS
j;)Manz
Wrth Solar; 2011 Manz
W Solar CrGS
(19J
2013 10 1
Solarion
ion-beam deposition
2018
crGS 14%
Global Solar Energy 2000
crGS
5.75
12.6 % 2011
20144
mxO.5 m
B7
2013
(Spin coating)
(Screen printing) (Doctor-blade
(Roll
coating)
to-Roll)
CIGS
!!
f crGS
CIGS
CIGS
crGS
IBMI.1 cu8 s rn Se Ga Se
Ga (N H)
400-525'C
crGS
{ 15.2% crGS
11 '
CIGS
Cu2S
In2Se,
Ga+Se
'
\
01 Iveln
N4H.
-~
SelS
Spin ngon
5ubstrate
.',
-
10'/Paally
dEmposep3re50cu.cr
Fllm250-3SO
CIGSFllm
11
86
CrGS
Thicker l
Film
CIGS
IBM
224
crGS
j;)Manz
Wrth Solar; 2011 Manz
W Solar CrGS
(19J
2013 10 1
Solarion
ion-beam deposition
2018
crGS 14%
Global Solar Energy 2000
crGS
5.75
12.6 % 2011
20144
mxO.5 m
B7
"
Solar Frontier 12
12
!I!!
(CIS)
(Ce") YAG
. MSi , O , N, (M=
(23) LED
Ca Sr Ba)
CIGS
YAG
" 2008
YAG
M =
TUV NORD
LED
Ca Sr Ba
0.6 mx l. 2 m 11 - 12 %
i(color
(Monoclinic) P2/c'
2013 7
rendering index , CRI)
P2 /m PJrn a OEu'
CIGS
[I ]Chapin D. M.; Fuller C. S. ; Pearson
(15 .7%)1 CIGS
G. L. , "A New silicon P-N Junction
; 2014
LED {
LED
photoc11
17% '
CaSi oN : Eu" SrSi ON : Eu "
into electrical power ", J. App l. Phys. ,
25 , 676(1954).
17%
: Ce"
YAG
for converting solar radiation
LED -
CIGS
(Sr , SiO 4
(Ca , Sr)AISiN (Ca " Ba)Si N
CRI
CIGS1ir
YAG m
[3]Panek P.; Lipinski M.; Be ltowska-
LED
Eu "
Lehman E.; Drabczyk K .; Ciach
R. , "Industrial technology of
LED
multicrystalline silicon solar cells" ,
Opto-Electronics Review , 1 J ,
269(2003)
LED (oxynitride)
(nitride)
B.; DeHart C.; Scharf J.; Perkins C
LED a
L.; To B.; Noufi R. ,
(Nichia)
(blue LED)
(Y , AI ,0 12
Toyoda
Gosei
Eu")
LED 1990
85
A(
[2] Kn obloch J.; Glunz S. w.; Biro 0 .; Warta
w.,
with efficiencies above 21 % processed
Schaffer E.; Wettl
"Solar cells
from Czochralski grown silicon" , 25 ,h

PVSC , 405( 1996).
[4]Repins 1.; Contreras M. A.; Egaas
' 19.9 % effici e nt
Ce YAG : Ce")
LED
LED ' 7
N " 0'
8 1. 2% fill factor" , Prog. Photovolt, 16,
LED YAG
235(2008)
(Gamet)
I!l!! LED
LED
224
2014~4 ~
ZnO /CdS/CulnGaSe s olar
cell with
(5]Han L. Y.; Islam A.; Chen H.; Malapaka
89
"
Solar Frontier 12
12
!I!!
(CIS)
(Ce") YAG
. MSi , O , N, (M=
(23) LED
Ca Sr Ba)
CIGS
YAG
" 2008
YAG
M =
TUV NORD
LED
Ca Sr Ba
0.6 mx l. 2 m 11 - 12 %
i(color
(Monoclinic) P2/c'
2013 7
rendering index , CRI)
P2 /m PJrn a OEu'
CIGS
[I ]Chapin D. M.; Fuller C. S. ; Pearson
(15 .7%)1 CIGS
G. L. , "A New silicon P-N Junction
; 2014
LED {
LED
photoc11
17% '
CaSi oN : Eu" SrSi ON : Eu "
into electrical power ", J. App l. Phys. ,
25 , 676(1954).
17%
: Ce"
YAG
for converting solar radiation
LED -
CIGS
(Sr , SiO 4
(Ca , Sr)AISiN (Ca " Ba)Si N
CRI
CIGS1ir
YAG m
[3]Panek P.; Lipinski M.; Be ltowska-
LED
Eu "
Lehman E.; Drabczyk K .; Ciach
R. , "Industrial technology of
LED
multicrystalline silicon solar cells" ,
Opto-Electronics Review , 1 J ,
269(2003)
LED (oxynitride)
(nitride)
B.; DeHart C.; Scharf J.; Perkins C
LED a
L.; To B.; Noufi R. ,
(Nichia)
(blue LED)
(Y , AI ,0 12
Toyoda
Gosei
Eu")
LED 1990
85
A(
[2] Kn obloch J.; Glunz S. w.; Biro 0 .; Warta
w.,
with efficiencies above 21 % processed
Schaffer E.; Wettl
"Solar cells
from Czochralski grown silicon" , 25 ,h

PVSC , 405( 1996).
[4]Repins 1.; Contreras M. A.; Egaas
' 19.9 % effici e nt
Ce YAG : Ce")
LED
LED ' 7
N " 0'
8 1. 2% fill factor" , Prog. Photovolt, 16,
LED YAG
235(2008)
(Gamet)
I!l!! LED
LED
224
2014~4 ~
ZnO /CdS/CulnGaSe s olar
cell with
(5]Han L. Y.; Islam A.; Chen H.; Malapaka
89
:.
C.; Chiranjeevi B.; Zhang S. F.; X. D.
Goushi Y.; Kijima S.; Aramoto T.;
A. J.; Chey S. J.; Gignac L.; Schrott A.
[23]Pan Y.; Wu M.; Su Q. , "Comparative
Yang; Yanagida M. , "High-efficiency
Fujiwara Y., "Interface control to
G. , "Hydrazine-based deposition route
investigation on synthesis and
dye-sensitized solar cell with a novel
enhance the fill factor over 0.70 in
for device-quality CIGS films" , 517 ,
photoluminescence of YAG:Ce
co-adsorbent" , Energy & Environmental
a large-area CIS based thin-film PV
2158(2009).
phosphor" , Mater. Sci. Eng. B , 106 ,
Science , 5, 6057(2012).
technology" , Thin Solid Films , 517 ,
[6]GE Research Beats First Solar's CdTe

PV Efficiency Record , http://www.
greentechmedia.coml
http://www.manz.coml
2108(2009)
251(2004).
[24]Lak. N. , Vara. U. V. , "White-Light
V. K.; Bansal A.; Le P.; Asensio
[20]Solar Frontier Officially Opens World's
Generation in Sr Si0 4 :Eu'\ Ce J -
O. 1., "Non-vacuum processing of
Largest CIS Solar Module Plant, http://
under Near-UV Excitation A Novel
www.solar-frontier.coml.
Phosphor for Solid-State Lighting" , J
[1 Kapur
[7]Thin-film photovoltaics achieves 20.8%
Culn 1, Ga,Se solar cells on rigid and
efficiency and overtakes multicrystalline
f1 exible substrates using nanopartic1e
[21]TSMC Solar Commercial-size Modules
silicon technology, http://www.zsw-bw.
precursor inks" , Thin Solid Films, 431 ,
(1. 09m') Set CIGS 15.7% Efficiency
de/.
53(2003).
Record , http://www.tsmc-solar.coml
Electrochem. Soc. , 152 , H 152005).

[2 Li
Y.Q.; de With G.; Hintzen H.T. ,
"Luminescence of a new c1ass of UV
[14]Kapur V. K.; Bansal A.; Le P.; Asensio
[22]Euler F.; Bruce J. A., "Oxygen coordinates
O. 1.; Shigeoka N. K. , "Fabrication
of compounds with garnet structure" ,
N' . ' .) :Ce J+ (M = Ca , Sr, Ba)" , J.
[9]Noufi R.; Gabor A. M.; Tuttle J. R.;
of Solar Cells via Printing of
Acta Crystallogr. , 19, 971 (1965).
Mater. Chem. , 15 , 4492(2005).
Tennant A. L.; Contreras M. A.; Albin
Nanoparticle Inks" , DOE Solar
D. S.; Carapella J. J. , "Method of
Program Review Meeting, 135(2004)
[8]Research Cell Efficiency Records , http://

www.nrel.gov/ncpvl
fabricating high-efficiency Cu(In ,Ga)
[15]Norsworthy G.; Leidholm C. R.; Halani
(SeS) thin films for solar cells" , US
A.; Kapur V. K.; Roe R. , Basol B.
patent:544 1897 (1 995).
M.; Matson R. , "CIS film growth by
[lO ]Dhere N. G. , "Present status and fure
metallic ink coating and selenization" ,
prospects of CIGSS thin film solar
Solar Energy Materials & Solar cells ,
cells" , Solar Energy Materials & Solar
60 , 127(2000).
Cells , 90, 2181 (2006).

[ll]Nagoya Y.; Kushiya K.; Tachiyuki M.;
[16]Refer to CIS Solartecknik's
http://www.cis-solartechnik.de/
sulfur into the surface of Cu(InGa)

absorber" , Solar
Cu(In ,Ga)(S ,Se ), absorber yielding
Energy Materials & Solar Cells , 67 ,
a 15.2% efficient solar cell" , Prog.
247(2001).
Photovolt, 21 , 82(2013)
K.; Tanaka Y.; Hakuma H.;
websi
T.; Mitzi D. B., "Solution-processed
[1 Kushiya
MSi O
[17]Todorov T. K.; Gunawan 0.; Gokmen
, thin-film
blue-emitting phosphors
Yamase 0. , "Role of incorporated
Se
[1 9]Strong partners with a common goal ,
[18]Mitzi D
Yuan M.; Liu
w.; Kellock
224
20144
:.
C.; Chiranjeevi B.; Zhang S. F.; X. D.
Goushi Y.; Kijima S.; Aramoto T.;
A. J.; Chey S. J.; Gignac L.; Schrott A.
[23]Pan Y.; Wu M.; Su Q. , "Comparative
Yang; Yanagida M. , "High-efficiency
Fujiwara Y., "Interface control to
G. , "Hydrazine-based deposition route
investigation on synthesis and
dye-sensitized solar cell with a novel
enhance the fill factor over 0.70 in
for device-quality CIGS films" , 517 ,
photoluminescence of YAG:Ce
co-adsorbent" , Energy & Environmental
a large-area CIS based thin-film PV
2158(2009).
phosphor" , Mater. Sci. Eng. B , 106 ,
Science , 5, 6057(2012).
technology" , Thin Solid Films , 517 ,
[6]GE Research Beats First Solar's CdTe

PV Efficiency Record , http://www.
greentechmedia.coml
http://www.manz.coml
2108(2009)
251(2004).
[24]Lak. N. , Vara. U. V. , "White-Light
V. K.; Bansal A.; Le P.; Asensio
[20]Solar Frontier Officially Opens World's
Generation in Sr Si0 4 :Eu'\ Ce J -
O. 1., "Non-vacuum processing of
Largest CIS Solar Module Plant, http://
under Near-UV Excitation A Novel
www.solar-frontier.coml.
Phosphor for Solid-State Lighting" , J
[1 Kapur
[7]Thin-film photovoltaics achieves 20.8%
Culn 1, Ga,Se solar cells on rigid and
efficiency and overtakes multicrystalline
f1 exible substrates using nanopartic1e
[21]TSMC Solar Commercial-size Modules
silicon technology, http://www.zsw-bw.
precursor inks" , Thin Solid Films, 431 ,
(1. 09m') Set CIGS 15.7% Efficiency
de/.
53(2003).
Record , http://www.tsmc-solar.coml
Electrochem. Soc. , 152 , H 152005).

[2 Li
Y.Q.; de With G.; Hintzen H.T. ,
"Luminescence of a new c1ass of UV
[14]Kapur V. K.; Bansal A.; Le P.; Asensio
[22]Euler F.; Bruce J. A., "Oxygen coordinates
O. 1.; Shigeoka N. K. , "Fabrication
of compounds with garnet structure" ,
N' . ' .) :Ce J+ (M = Ca , Sr, Ba)" , J.
[9]Noufi R.; Gabor A. M.; Tuttle J. R.;
of Solar Cells via Printing of
Acta Crystallogr. , 19, 971 (1965).
Mater. Chem. , 15 , 4492(2005).
Tennant A. L.; Contreras M. A.; Albin
Nanoparticle Inks" , DOE Solar
D. S.; Carapella J. J. , "Method of
Program Review Meeting, 135(2004)
[8]Research Cell Efficiency Records , http://

www.nrel.gov/ncpvl
fabricating high-efficiency Cu(In ,Ga)
[15]Norsworthy G.; Leidholm C. R.; Halani
(SeS) thin films for solar cells" , US
A.; Kapur V. K.; Roe R. , Basol B.
patent:544 1897 (1 995).
M.; Matson R. , "CIS film growth by
[lO ]Dhere N. G. , "Present status and fure
metallic ink coating and selenization" ,
prospects of CIGSS thin film solar
Solar Energy Materials & Solar cells ,
cells" , Solar Energy Materials & Solar
60 , 127(2000).
Cells , 90, 2181 (2006).

[ll]Nagoya Y.; Kushiya K.; Tachiyuki M.;
[16]Refer to CIS Solartecknik's
http://www.cis-solartechnik.de/
sulfur into the surface of Cu(InGa)

absorber" , Solar
Cu(In ,Ga)(S ,Se ), absorber yielding
Energy Materials & Solar Cells , 67 ,
a 15.2% efficient solar cell" , Prog.
247(2001).
Photovolt, 21 , 82(2013)
K.; Tanaka Y.; Hakuma H.;
websi
T.; Mitzi D. B., "Solution-processed
[1 Kushiya
MSi O
[17]Todorov T. K.; Gunawan 0.; Gokmen
, thin-film
blue-emitting phosphors
Yamase 0. , "Role of incorporated
Se
[1 9]Strong partners with a common goal ,
[18]Mitzi D
Yuan M.; Liu
w.; Kellock
224
20144
ttj 1
12 -4]
) .f'F
l 1
P l.
()
Li" H ' Na+)
L j+[51
WO J(t ransparenl) + xLt + xe-
Li WOJ(blue)
(1)
Transparent Substrate
Transparent Conductive Electrode
(smart windows) . IJ
(1m )
[11 (electrochromic)
[1) 0 f'j:
jl( 224
20144
lon Storage Layer or

Eleclrochromic Layer 11
Electrolyte (Ion Conductor)
92
Electrochromic Layer I
93
ttj 1
12 -4]
) .f'F
l 1
P l.
()
Li" H ' Na+)
L j+[51
WO J(t ransparenl) + xLt + xe-
Li WOJ(blue)
(1)
(smart windows) . IJ
(1m )
[11 (electrochromic)
[1) 0 f'j:
jl( 224
20144
lon Storage Layer or

Eleclrochromic Layer 11
Electrolyte (Ion Conductor)
92
Electrochromic Layer I
93
(1)
(7)
30
Li+
PEG (7)
PEG-PTA
PEG-PTA
PEG-
(1) Li+
H O PTA
l8JJ PTA
H 0 '
(OH)
H 0 PTA
H 2 0
(6)
PTA i
PTA {
(thiourea)
i PTA
PTA
(2)
(8)
PEG
PEG
OH-
H O peroxopolytungstic
30
2+
acid (PTA)
PTA-
(9)
400 0 C
{ PTA
30[ 2(a) (b)
+ OHN iO OH (colored) + e-
NiO (tansparent)
H
(2)
SEM 2
-330nm' 1
XRD 3(a)
(7)
{I 0.17}
XRD
PTA
PTA
(microstructure)
(templating
Opoly(ethylene
Raman 3(b)
(nanoarchitecture)
glycol) (PEG) .
805cm- 1 714cm- 1 272cm- 1
monoclinic
94
agent)
224
20144
95
(1)
(7)
30
Li+
PEG (7)
PEG-PTA
PEG-PTA
PEG-
(1) Li+
H O PTA
l8JJ PTA
H 0 '
(OH)
H 0 PTA
H 2 0
(6)
PTA i
PTA {
(thiourea)
i PTA
PTA
(2)
(8)
PEG
PEG
OH-
H O peroxopolytungstic
30
2+
acid (PTA)
PTA-
(9)
400 0 C
{ PTA
30[ 2(a) (b)
+ OHN iO OH (colored) + e-
NiO (tansparent)
H
(2)
SEM 2
-330nm' 1
XRD 3(a)
(7)
{I 0.17}
XRD
PTA
PTA
(microstructure)
(templating
Opoly(ethylene
Raman 3(b)
(nanoarchitecture)
glycol) (PEG) .
805cm- 1 714cm- 1 272cm- 1
monoclinic
94
agent)
224
20144
95
"
(a) (b)!SEM1101
(a)TEM (b)TEM }
(b)
(a)
amorphous
malrix
4(a) TEM
1l:
t
aco-c-
bazo-z-
SEM XRD Raman
2 Th ela I degr
3
pore
TEM
l
~r-
ITO. glass
10
nanoc stal
ro
200
400
600
600
Wavenmber(')
(a)XRD (b)Ramam
iS 1
95
PTA (T-O)
Raman Ramanl
4(a)
'TEM
PTA
monoclinic
1It
450 0 C
TEM
monoc1 inic
.\'f! (unit
XRDmonoclinic
[18)
(l tlJ 1 PTA
Raman i
4(b)
TEM 1iI3 M JE!
6(b)))1;1.:
TEM
5 nm
fM
)1;
6(a)
a 6(b)
ft I~ 224
2014 4
block)
97
"
(a) (b)!SEM1101
(a)TEM (b)TEM }
(b)
(a)
amorphous
malrix
4(a) TEM
1l:
t
aco-c-
bazo-z-
SEM XRD Raman
2 Th ela I degr
3
pore
TEM
l
~r-
ITO. glass
10
nanoc stal
ro
200
400
600
600
Wavenmber(')
(a)XRD (b)Ramam
iS 1
95
PTA (T-O)
Raman Ramanl
4(a)
'TEM
PTA
monoclinic
1It
450 0 C
TEM
monoc1 inic
.\'f! (unit
XRDmonoclinic
[18)
(l tlJ 1 PTA
Raman i
4(b)
TEM 1iI3 M JE!
6(b)))1;1.:
TEM
5 nm
fM
)1;
6(a)
a 6(b)
ft I~ 224
2014 4
block)
97
'!!
Final
product
Precu or
(b)
- -
T-O
(.
3
)OEO-o=E
(a)
PTA Thiourea
>.k>>
(c)
-.--<
-+
-f ~ . a . T"
-..OT>
unit
4000
(d)
. . c : WO
6
98
2000
1800 160 1400 1200

Wavenumber (cm-1 )
1000
800
600
-PTA;& 1 1.111
OQC :gas
Y : Thiourea I Thiourea trioxide
(a}T-O (b)1 (c)T-3(d)T-4 . (a)(d)"
PTA -OH)(W=O)
(NH H)CSOH))I "I
PTA
T-3
1700cm-' 1460cm-' 1250cm-'
-PTA
(T-I I)
-15nm BETl
1050cm-'
H o
50nm
T-3
-2m
1400cm-'
(hierarchical) i~
1.5 m'lg
!(2)
7.1 m'l
I I 1460cm" 1400cm"
fg-500nm' l 6(c)
20 .4 m'
vas(N-C-N)
(C= S)
50nm
PTA
(3 )
1700cm" 1250cm" 1050cm"
6(d) E
-PTA
viC=N) V0) V( S=O)I"1
1 25
50nm
-PTA
T-O 1635cm"
H O
" BET
956cm"
(thiourea trioxide ,
224
20144
99
'!!
Final
product
Precu or
(b)
- -
T-O
(.
3
)OEO-o=E
(a)
PTA Thiourea
>.k>>
(c)
-.--<
-+
-f ~ . a . T"
-..OT>
unit
4000
(d)
. . c : WO
6
98
2000
1800 160 1400 1200

Wavenumber (cm-1 )
1000
800
600
-PTA;& 1 1.111
OQC :gas
Y : Thiourea I Thiourea trioxide
(a}T-O (b)1 (c)T-3(d)T-4 . (a)(d)"
PTA -OH)(W=O)
(NH H)CSOH))I "I
PTA
T-3
1700cm-' 1460cm-' 1250cm-'
-PTA
(T-I I)
-15nm BETl
1050cm-'
H o
50nm
T-3
-2m
1400cm-'
(hierarchical) i~
1.5 m'lg
!(2)
7.1 m'l
I I 1460cm" 1400cm"
fg-500nm' l 6(c)
20 .4 m'
vas(N-C-N)
(C= S)
50nm
PTA
(3 )
1700cm" 1250cm" 1050cm"
6(d) E
-PTA
viC=N) V0) V( S=O)I"1
1 25
50nm
-PTA
T-O 1635cm"
H O
" BET
956cm"
(thiourea trioxide ,
224
20144
99
Eth l
1>
500
- - setting temp
cruclble
4~ .
(E
)O
T-1
32 T.2
o T-3
10
15
20
25
time (min)
PTA
20mCcm-' Li (
(2)
(Transmittance modulation)
[1 9(a)
-PTA
(3)
UV-Vis-IR
FTO
-80%
F 8 12-18
10%
T-3 i 1
Li
T-3
l T-3
Y!! M ?\:
PTA
-80%
- TG
H 0 !
400.C
FTIR TG IDTA-MS
632nm 70 %
il'ii [1
1'J:l
8 2 im 350-
tlfl 6
9(b) PEG
400.C 3 ;
[7J
T-3
Y!! a
l PTA
H 02
10
! ammo
PTA
~ 118)
Li
PEG
632nm
-70 % - 10%-60% '

-50 %
PEG
( I ) PTA
1M LiCIO/
H 2 0 2 '
propylene carbonate (PC)
Ag/AgCI
224
20144
'
Eth l
1>
500
- - setting temp
cruclble
4~ .
(E
)O
T-1
32 T.2
o T-3
10
15
20
25
time (min)
PTA
20mCcm-' Li (
(2)
(Transmittance modulation)
[1 9(a)
-PTA
(3)
UV-Vis-IR
FTO
-80%
F 8 12-18
10%
T-3 i 1
Li
T-3
l T-3
Y!! M ?\:
PTA
-80%
- TG
H 0 !
400.C
FTIR TG IDTA-MS
632nm 70 %
il'ii [1
1'J:l
8 2 im 350-
tlfl 6
9(b) PEG
400.C 3 ;
[7J
T-3
Y!! a
l PTA
H 02
10
! ammo
PTA
~ 118)
Li
PEG
632nm
-70 % - 10%-60% '

-50 %
PEG
( I ) PTA
1M LiCIO/
H 2 0 2 '
propylene carbonate (PC)
Ag/AgCI
224
20144
'
ta-hF
(a)
(b)
6 o g i 60
900 1200 1500

Wavelength (nm)
1800
600
900 1200 1500 1800

Wavelength (nm)
h
nu
600
..
.
.
.
.
.
..
.
.
..
...
HI
20
20
(a)
nununu
40 540
bEE
a
-gz
"
acECO
2)
(4
aunOA
~ 80
bleached state
colored state
- - - T modulation
1.0
100
nunnunu
80
-asepared
100
unOA
100
- - as-prepared
- - - bleached state
. . .. colored state
_._.. T modulation
100
nunu
10
15
5
charge density (mCcm"2)
20
nununUAUnununununu
87654321
(c)
(a)(b)PEG UV-Vis-IR
(4U)
E
EZEC
E
".1
(coloration
10(b)
efficiency, CE)
(Q) (optical density,
11 s 0
OD):
ln 110(c)
CE
= ll(OD)jllQ
(3)
ITO
50
10
100 150 200 250 300 350

Ti me (sec)
nu
3 00
7200 1 800 14400

Ti me (sec)
18 00
632 nm (a) (b)

(c)l
LiCIO/PC
FTO
-200nm
10(a) 10Acm" Li
450 0 C 30
(glancing angle) XRD
12 FTO
102
i!la 632nm
(3)
(d) (200)
() Scherrer( (4))
37cm'C" .
d=Kjcos9
SEM
-3V +3V
H O
(0.9) XRD
i!la 632nm
40%
-18nm-lO nm TEM
224
11 (a) (b)
20144
1131
(4)
1 3
ta-hF
(a)
(b)
6 o g i 60
900 1200 1500

Wavelength (nm)
1800
600
900 1200 1500 1800

Wavelength (nm)
h
nu
600
..
.
.
.
.
.
..
.
.
..
...
HI
20
20
(a)
nununu
40 540
bEE
a
-gz
"
acECO
2)
(4
aunOA
~ 80
bleached state
colored state
- - - T modulation
1.0
100
nunnunu
80
-asepared
100
unOA
100
- - as-prepared
- - - bleached state
. . .. colored state
_._.. T modulation
100
nunu
10
15
5
charge density (mCcm"2)
20
nununUAUnununununu
87654321
(c)
(a)(b)PEG UV-Vis-IR
(4U)
E
EZEC
E
".1
(coloration
10(b)
efficiency, CE)
(Q) (optical density,
11 s 0
OD):
ln 110(c)
CE
= ll(OD)jllQ
(3)
ITO
50
10
100 150 200 250 300 350

Ti me (sec)
nu
3 00
7200 1 800 14400

Ti me (sec)
18 00
632 nm (a) (b)

(c)l
LiCIO/PC
FTO
-200nm
10(a) 10Acm" Li
450 0 C 30
(glancing angle) XRD
12 FTO
102
i!la 632nm
(3)
(d) (200)
() Scherrer( (4))
37cm'C" .
d=Kjcos9
SEM
-3V +3V
H O
(0.9) XRD
i!la 632nm
40%
-18nm-lO nm TEM
224
11 (a) (b)
20144
1131
(4)
1 3
11
(a) (b) SEM [13]
TEM
(c) (d)
XRD
3
-m
C-O
Z
13(e) (
TEM
13
(a) TEM (c) TEM (e) TEM

(b) TEM (d)TEM (1)
TEM [13]
FTO-glass
14(a) (b) \fl
'1[
UV-Vis-IR
('1'
14
40mCcm- 2
14
1M NaOH
550nm- 70%
550nm
FTO
! J!/]-65 %
-70% m
40mCcm- 2
14(b)I'F
550nm
TEM 13 )
-65 % )
14(a) (b) 550nm
(b) .
. H!J 300-600nm
20% 14
Nickel Oxide
(Cubic 01-073-1519)
8ES
20 25 30 35 40 45 50 55 60 65 70 75 80
2 Theta
12
10<1
XRD I
224
20144
os
11
(a) (b) SEM [13]
TEM
(c) (d)
XRD
3
-m
C-O
Z
13(e) (
TEM
13
(a) TEM (c) TEM (e) TEM

(b) TEM (d)TEM (1)
TEM [13]
FTO-glass
14(a) (b) \fl
'1[
UV-Vis-IR
('1'
14
40mCcm- 2
14
1M NaOH
550nm- 70%
550nm
FTO
! J!/]-65 %
-70% m
40mCcm- 2
14(b)I'F
550nm
TEM 13 )
-65 % )
14(a) (b) 550nm
(b) .
. H!J 300-600nm
20% 14
Nickel Oxide
(Cubic 01-073-1519)
8ES
20 25 30 35 40 45 50 55 60 65 70 75 80
2 Theta
12
10<1
XRD I
224
20144
os
14
.,
100
'Alu
"
(a)
100
As -prepared
100
.... Colored
80
81eached
_.- T modulation
ZFESO
4oCgE
40
20)
b
R
20
---.
0 1/'.----.-._.---_._-------
300
600
900
1200
Wavelength (nm)
? ||
Col
EC
1500
11 B:tM
*'
(b)
80
~
'
40
20
..
300
:::::.....
. ,
- As-prepared
.. . Colored
- Bleached
_. - T modulation
100
-.
......-.-.- .
20 -
1200
600
900
Wavelenglh (nm)
1.0
60 c8.
40 g
1.2 [ (a)
80
150
1 1 81..
| MPEF 11 ored
EC
11
EC
0.8
.., -.-m
0.6
0.4
2
0.0
15
KE
.z-.
....
........-
1"1
r1
r'l
2ZS 5O
E
E 40
-E.
.......
10 15 20 25 30
charge density (mC/cm 2 )
o'
60
35
30
20
10~\..! . . .U .
4
U.
60 120 180 240 300 360 420 480 540 600

lmes (s)
550nm (a) (b)

I
14
(a) (b) UV-Vis-IR

[13]
[2]Wu , J.-J.; Hsieh , M.-D.; Liao , W.-
P.; Wu , W.-T.; Chen , J.-S. , "Fast-
Switching Photovoltachromic Cells with
<10% -60%
12s
Tunable Transmittance" , ACS Nano , 3,
[10.13.15 16]
2297-2303 (2009).
{ll.l
15(a)
50Acm"
550nm

(3)
106
[3]Wu , J.-J.;
Wu , W.-T.;
M.-D.; Liao , W.-P.;
Ch J.
Huang
J.-L. ,
"Photovoltachromic Device and the
Application Thereof' , US Patent No.
US8238016 B2 , (2012).
[4]
25.6cm'C'\ 0
+2V -2V
[1 ]Granqvist , C.G. , "Oxide El ectro-
[5]Granqvist, c. G. , "Handbook ofinorganic
550nm 40%
(1 4.17] 0
chromics: An Introduction to Devices
electrochromic materials" , EIsevier, The
15(b)
and Materials" , So l. Energy Mater. Sol
Netherlands. 1995
Cells, 99 , 1-13 (2012).
224
'
1384310 (2013)
20144
[6]Nagai , 1., "Characterization of
107
14
.,
100
'Alu
"
(a)
100
As -prepared
100
.... Colored
80
81eached
_.- T modulation
ZFESO
4oCgE
40
20)
b
R
20
---.
0 1/'.----.-._.---_._-------
300
600
900
1200
Wavelength (nm)
? ||
Col
EC
1500
11 B:tM
*'
(b)
80
~
'
40
20
..
300
:::::.....
. ,
- As-prepared
.. . Colored
- Bleached
_. - T modulation
100
-.
......-.-.- .
20 -
1200
600
900
Wavelenglh (nm)
1.0
60 c8.
40 g
1.2 [ (a)
80
150
1 1 81..
| MPEF 11 ored
EC
11
EC
0.8
.., -.-m
0.6
0.4
2
0.0
15
KE
.z-.
....
........-
1"1
r1
r'l
2ZS 5O
E
E 40
-E.
.......
10 15 20 25 30
charge density (mC/cm 2 )
o'
60
35
30
20
10~\..! . . .U .
4
U.
60 120 180 240 300 360 420 480 540 600

lmes (s)
550nm (a) (b)

I
14
(a) (b) UV-Vis-IR

[13]
[2]Wu , J.-J.; Hsieh , M.-D.; Liao , W.-
P.; Wu , W.-T.; Chen , J.-S. , "Fast-
Switching Photovoltachromic Cells with
<10% -60%
12s
Tunable Transmittance" , ACS Nano , 3,
[10.13.15 16]
2297-2303 (2009).
{ll.l
15(a)
50Acm"
550nm

(3)
106
[3]Wu , J.-J.;
Wu , W.-T.;
M.-D.; Liao , W.-P.;
Ch J.
Huang
J.-L. ,
"Photovoltachromic Device and the
Application Thereof' , US Patent No.
US8238016 B2 , (2012).
[4]
25.6cm'C'\ 0
+2V -2V
[1 ]Granqvist , C.G. , "Oxide El ectro-
[5]Granqvist, c. G. , "Handbook ofinorganic
550nm 40%
(1 4.17] 0
chromics: An Introduction to Devices
electrochromic materials" , EIsevier, The
15(b)
and Materials" , So l. Energy Mater. Sol
Netherlands. 1995
Cells, 99 , 1-13 (2012).
224
'
1384310 (2013)
20144
[6]Nagai , 1., "Characterization of
107
2014
fEFU
BP
Evaporated N ickel Oxide and its
[11]Wu , W.-T.; Wu , J.-J.;
[17]
Application to Electrochromic Glazing" ,
"Resistive Switching Behavior and
Cells
Multiple Transmittance States in
'
Solution-Processed Tungsten Oxide" ,
1419994 (2013)
So l. Energy. Mater. So l.
l -:1 <
[18]Wu , W.-T.; Chen , J.-S.; Wu , J.-
| "" 1 j"""
J. , "Synthesis of Tungsten Oxide
l Automotive
J.-
Powders Via Thiourea-Assisted
l ~
Poly(Ethylene Glycol)- Template
J. , "A1uminum Electrode Modulated
Route: Tailoring from Hierarchica1
Nanostructured Tungsten Oxide Films
Bipolar Resistive Switching of AI I
Microspheres to Mesoporously
with Enhanced Charge Transferl
Fuel-Assisted NiOxll TO Memory
Structured Nanoparticles" , J. Am.
Transport Characteristics" Phys. Chem.
Devices Modeled with a Dual-
Cerm. Soc. , 93 , 2268-2273 (2010).
Chem. Phys. , 11 , 9751-9758 (2009).
291-299 (1993)
[7]Wu , W.-T.;
Chen , J.-S.;
Li
VI
W.-P.;
Ch L.-
J.-J. , "Outperformed
Electrochromic Behavior of
[8]Niklasson , G. A.;
Granqvi
C. G. ,
"E1ectrochromics for Smart Windows:
ACS Applied Materials & Interfaces ,

3, 2616-2621 (2011)
[12]Chiang K.-K.;
Ch J.
Wu
10
12
(2012)
11
I ?> HH
12
;;Ta? 7-!:
12
| ;;1
14
1 SYSTEMS
12
1;: .;I.
26
12
15
(2013).
16
1 ;/7r7=-"
12
17
I Linux
12
18
I 2
19
1 NETWORK
12
20
I -;1. :;-"-t
48
23
I 7- '1'7" z
26
24
I :z ;.-
24
25
1 ;t:-t.t' }!'"
12
[14]
Structure and Intercalation Properties",

J. Electrochem. Soc. , 153 , C365-C376
(2013)
[ 15]
to Nanostructured Tungsten Oxide
/'
"An Efficient Route
12
Mater. Interfaces , 5 , 6502-6507
: CN102230172B
P.; J.-J.,
12
App l. Mater. Interfaccs , 4, 4237 -4245
Tungsten Oxide Films by Sol-gel
J.-S.; Liao , W.-
3 r '7
24
Device Application" , ACS App l.
Ch
50
| ~ 7Y::'-
(2007)
[10]Wu , W.-T.;
Nickel Oxide Films for E1ectrochromic
(2006).
Technology
Oxygen-Reservoir Structure" , ACS
These" , J. Mater. Chem. , 17 , 127-156
A. , "E1ectrochromic Nanostructured
12
| ~
Solution Route to Nanostructured
Nickel Oxide, and Devices Based on
Agnihot
! ~
[l 3]Chiang K.-K.; Wu , J.-J. , "Fuel-Assisted
K.; Shivaprasad , S. M.;
12
Thin Fi1ms of Tungsten Oxide and
[9]Deepa , M.; Joshi , A. G.; Srivastava, A
108
Ch J. -S. ,
'
1405826 (2013)
[ 16]
Fi1ms with Improved Electrochromic
Properties" , ChemPhysChem , 11 ,
3306-3312 (2010)
1405827 (2013)
'
:
-
:
y 1) _';/ ;i "
-!' :1
24
24
224
20144
109
2014
fEFU
BP
[11]Wu , W.-T.; Wu , J.-J.;
[17]
Cells
'
1419994 (2013)
l -:1 <
[18]Wu , W.-T.; Chen , J.-S.; Wu , J.-
| "" 1 j"""
l Automotive
J.-
l ~
Cerm. Soc. , 93 , 2268-2273 (2010).
Chem. Phys. , 11 , 9751-9758 (2009).
291-299 (1993)
[7]Wu , W.-T.;
Chen , J.-S.;
Li
VI
W.-P.;
Ch L.-
Granqvi
C. G. ,

3, 2616-2621 (2011)
[12]Chiang K.-K.;
Ch J.
Wu
10
12
(2012)
11
I ?> HH
12
;;Ta? 7-!:
12
| ;;1
14
1 SYSTEMS
12
1;: .;I.
26
12
15
(2013).
16
1 ;/7r7=-"
12
17
I Linux
12
18
I 2
19
1 NETWORK
12
20
I -;1. :;-"-t
48
23
I 7- '1'7" z
26
24
I :z ;.-
24
25
1 ;t:-t.t' }!'"
12
[14]

(2013)
[ 15]
/'
"An Efficient Route
12
: CN102230172B
P.; J.-J.,
12
J.-S.; Liao , W.-
3 r '7
24
Ch
50
| ~ 7Y::'-
(2007)
[10]Wu , W.-T.;
(2006).
Technology
12
| ~
Agnihot
! ~
12
108
Ch J. -S. ,
'
1405826 (2013)
[ 16]
3306-3312 (2010)
1405827 (2013)
'
:
-
:
y 1) _';/ ;i "
-!' :1
24
24
224
20144
109
2014
fEFU
BP
[11]Wu , W.-T.; Wu , J.-J.;
[17]
Cells
'
1419994 (2013)
l -:1 <
[18]Wu , W.-T.; Chen , J.-S.; Wu , J.-
| "" 1 j"""
l Automotive
J.-
l ~
Cerm. Soc. , 93 , 2268-2273 (2010).
Chem. Phys. , 11 , 9751-9758 (2009).
291-299 (1993)
[7]Wu , W.-T.;
Chen , J.-S.;
Li
VI
W.-P.;
Ch L.-
Granqvi
C. G. ,

3, 2616-2621 (2011)
[12]Chiang K.-K.;
Ch J.
Wu
10
12
(2012)
11
I ?> HH
12
;;Ta? 7-!:
12
| ;;1
14
1 SYSTEMS
12
1;: .;I.
26
12
15
(2013).
16
1 ;/7r7=-"
12
17
I Linux
12
18
I 2
19
1 NETWORK
12
20
I -;1. :;-"-t
48
23
I 7- '1'7" z
26
24
I :z ;.-
24
25
1 ;t:-t.t' }!'"
12
[14]

(2013)
[ 15]
/'
"An Efficient Route
12
: CN102230172B
P.; J.-J.,
12
J.-S.; Liao , W.-
3 r '7
24
Ch
50
| ~ 7Y::'-
(2007)
[10]Wu , W.-T.;
(2006).
Technology
12
| ~
Agnihot
! ~
12
108
Ch J. -S. ,
'
1405826 (2013)
[ 16]
3306-3312 (2010)
1405827 (2013)
'
:
-
:
y 1) _';/ ;i "
-!' :1
24
24
224
20144
109
April
4
j 11;
AS
ZJ
CIGS
CIGS
CIGS
CIGS
CIGS
(CIGS)
15-17 % '
f{ff iJf{t
CIGS
CIGS
m 1
CIGSI
CIGS
HelioVolt Nano solar ISET
CIGS
CIGS
(l -Octadece ODE)
CIGS
(arrested precipitation)l
(trioctylphosphine, TOP) , (oleic acid ,
CIGS
OA)(oleylamine OLA)
(1. 02 eV1. 68 eV) CIGS(1.
20% ' 30% '
CIGS(>IO'cm)
1-2m 0.03 /
(110)
(CIGS) (() CIS) (

() CIGS) (CIGSSe)
110
224
20144
11
April
4
j 11;
AS
ZJ
CIGS
CIGS
CIGS
CIGS
CIGS
(CIGS)
15-17 % '
f{ff iJf{t
CIGS
CIGS
m 1
CIGSI
CIGS
HelioVolt Nano solar ISET
CIGS
CIGS
(l -Octadece ODE)
CIGS
(arrested precipitation)l
(trioctylphosphine, TOP) , (oleic acid ,
CIGS
OA)(oleylamine OLA)
(1. 02 eV1. 68 eV) CIGS(1.
20% ' 30% '
CIGS(>IO'cm)
1-2m 0.03 /
(110)
(CIGS) (() CIS) (

() CIGS) (CIGSSe)
110
224
20144
11
AF
1>
Hot Solvent Method

.Cu. Ga , S. 5e precursors
-Solvent
-Surfactant
..
STEM-EDS mapping
( 3) EDS
.;
~.-;
b
CIGS
-~-"--
F
-_."_
Cu:ln:Ga:S:Se 1 :0.5:0.5: 1: 1
X (XPS)
CIGS
Cu1n .
Ga( SySe l )2
XRD
(111)
CulnSe 2 aCulnGaSe 2
1I:R 0
1 C1GS
CIGS
Culn 1., Ga( SySe l Y )2
o Pan
CuGaS 2 CulnSe 2
CulnSe
( 4)
112
diffraction , XRD)
O!..
E :Aq.z
heater
CIGS Culn l . Ga/S ySe l.Y)2
space group
1-42d '
Se ~
1m
5'
265 C '
Ga S
UV-Vis-NIR
Korgel 2008
6 Culn l .
iliCulnS CulnSe 2
Culn l . Ga , (SySe 1)2 S I
Ga(SySe l )2
CulnGaSe
Se In/Ga x y
Culn l .Ga/S y Se l )2
Hillhouse 2008
1] 1 S/Se In/Ga
CulnSe
Culn o .Ga O .5(So. Se o )
1. 08 eV
Il] CIGS
( 2)
2.02 eV Cyclic
Sargent CuGaSe
(TEM) HRTEM X (X-ray
voltammetry analysis (CV)
224
20144
Vegard's law'
113
AF
1>
Hot Solvent Method

.Cu. Ga , S. 5e precursors
-Solvent
-Surfactant
..
STEM-EDS mapping
( 3) EDS
.;
~.-;
b
CIGS
-~-"--
F
-_."_
Cu:ln:Ga:S:Se 1 :0.5:0.5: 1: 1
X (XPS)
CIGS
Cu1n .
Ga( SySe l )2
XRD
(111)
CulnSe 2 aCulnGaSe 2
1I:R 0
1 C1GS
CIGS
Culn 1., Ga( SySe l Y )2
o Pan
CuGaS 2 CulnSe 2
CulnSe
( 4)
112
diffraction , XRD)
O!..
E :Aq.z
heater
CIGS Culn l . Ga/S ySe l.Y)2
space group
1-42d '
Se ~
1m
5'
265 C '
Ga S
UV-Vis-NIR
Korgel 2008
6 Culn l .
iliCulnS CulnSe 2
Culn l . Ga , (SySe 1)2 S I
Ga(SySe l )2
CulnGaSe
Se In/Ga x y
Culn l .Ga/S y Se l )2
Hillhouse 2008
1] 1 S/Se In/Ga
CulnSe
Culn o .Ga O .5(So. Se o )
1. 08 eV
Il] CIGS
( 2)
2.02 eV Cyclic
Sargent CuGaSe
(TEM) HRTEM X (X-ray
voltammetry analysis (CV)
224
20144
Vegard's law'
113
e!~
(a)
(NFF)
(a)
(b)
)
A
ZcMC-
20
25
30
35
40
45
55
60
r--cu~asJ~~~:~~'
(112)
(3)
3U
Cu
x=y=0.2
0.1
CulnSe JCPDS 40.1487
20
Se
Culn , .Ga.(Se,.),
(3)
C3U
IEDS
u:25.12%
Iln ' 12 .4 4%
a : 12.42%
24.86%
(d)
LJ36
(20)
U
MZ3
20 25 30 35 40 45 50 55 60 65 70 75 80
2 Thela (degree)
Culn 1.xGaX( SySe 1y)2
25
30
35
40
45
2Thela (Degree)
2 3 4 5 6 7 8 9 1011 12
Energy (KeV)
50
55
8
10
Energy (KeV)
12
14
60
Culn 1 ' X Ga X (SySe 1 .)2 (a)XRD (b)EDS
Cu Ino.Gao (So.Se o ) (a)XRD (b)TEM (C)HRTEM (d)EDS
(b)
(a)
~lnt..Ga.(S)'Se1.)')2
CV HOMO
LUMO
CulnSe
CuG.
e,
"'.'1
,.,...0
c;..
----\C
Se
x=y=O.1;
__ r u ln t ..Ga.(SySe t ...)2
..---- ~ --- I
CuG~Se
M
I I
1. 14
eV 2.23
114
Culno~Ga(So.5e 05 )STEM-EDS7t
224
20144
Culn , Ga(SySe.}vsI
' 15
e!~
(a)
(NFF)
(a)
(b)
)
A
ZcMC-
20
25
30
35
40
45
55
60
r--cu~asJ~~~:~~'
(112)
(3)
3U
Cu
x=y=0.2
0.1
CulnSe JCPDS 40.1487
20
Se
Culn , .Ga.(Se,.),
(3)
C3U
IEDS
u:25.12%
Iln ' 12 .4 4%
a : 12.42%
24.86%
(d)
LJ36
(20)
U
MZ3
20 25 30 35 40 45 50 55 60 65 70 75 80
2 Thela (degree)
Culn 1.xGaX( SySe 1y)2
25
30
35
40
45
2Thela (Degree)
2 3 4 5 6 7 8 9 1011 12
Energy (KeV)
50
55
8
10
Energy (KeV)
12
14
60
Culn 1 ' X Ga X (SySe 1 .)2 (a)XRD (b)EDS
Cu Ino.Gao (So.Se o ) (a)XRD (b)TEM (C)HRTEM (d)EDS
(b)
(a)
~lnt..Ga.(S)'Se1.)')2
CV HOMO
LUMO
CulnSe
CuG.
e,
"'.'1
,.,...0
c;..
----\C
Se
x=y=O.1;
__ r u ln t ..Ga.(SySe t ...)2
..---- ~ --- I
CuG~Se
M
I I
1. 14
eV 2.23
114
Culno~Ga(So.5e 05 )STEM-EDS7t
224
20144
Culn , Ga(SySe.}vsI
' 15
mr
~til
(a)
Culn ,..Gall(SySe')2
x=y=O.1
(3)u
tmn
Eg
1.08 eV
CIOS
1.17 eV
x=y=0.4
1.42 eV
x=y=0.5
1.56 eV
x=y=0.6
1.71 eV
x=y=0.8
2.01 eV
x=y=0.9
2.20 eV
1 (spray coating)

i .
CIOS
illJ
50
400
600
700
8 o
9 o
1000
1100
1200
1300
1400
Wavelength (nm)
CIGS
(b)
x=y=
0.8
0.4
0.1
(d)
(c)
-3.5
505
TItiEMIti--4
Ta-EEnEt-no
7 dd
24
Tll
lli
(@)
Tll
(2m
w)
U
-4 .0
CIGS
1-5
CulnSe
2m
[]
-6.0
-6.5
-2 -1 0
2
Potential (V)
116
Culn .Ga(SySe .y)' UV-Vis-NIRECVISI
224
. 3-D
i~
20144
117
mr
~til
(a)
Culn ,..Gall(SySe')2
x=y=O.1
(3)u
tmn
Eg
1.08 eV
CIOS
1.17 eV
x=y=0.4
1.42 eV
x=y=0.5
1.56 eV
x=y=0.6
1.71 eV
x=y=0.8
2.01 eV
x=y=0.9
2.20 eV
1 (spray coating)

i .
CIOS
illJ
50
400
600
700
8 o
9 o
1000
1100
1200
1300
1400
Wavelength (nm)
CIGS
(b)
x=y=
0.8
0.4
0.1
(d)
(c)
-3.5
505
TItiEMIti--4
Ta-EEnEt-no
7 dd
24
Tll
lli
(@)
Tll
(2m
w)
U
-4 .0
CIGS
1-5
CulnSe
2m
[]
-6.0
-6.5
-2 -1 0
2
Potential (V)
116
Culn .Ga(SySe .y)' UV-Vis-NIRECVISI
224
. 3-D
i~
20144
117
~\'}'!!
;;;;t?
Experimental
Culn(SO.5SeO.5)2
- -Culn(S05Se05)2
(JCPDS 36-1311)
-m)
1
1m
40 45 50 55 60
2 Thela (degree)
3 35
EE
20 25
Culn(SJh )
weighl' 1. 18g
Culn(SSe 03S )2
-- Culn(SO.5 Se O.5>2
(JCPDS 36-1311)
. 8
"hw
oh
40 45 50 55 60
2 Thela (degree)
3 35
20 25
Experimental
Culn05Ga05Se2
CulnO.5Ga05Se2
weighl ' 1.25 9
CulnSe
- - Culn05Ga05Se2
(JCPDS 40-1488)
1n
'
1n
20 25 30 35 40 45 50 55 60
2 Thela (degree)

3.
CulnO.5Ga~(S~SeLts);
welghl ' 1.34 9
':; .:....I;.....li
:
Ea:EU
400
2 Thela (degree)
118
500
600
800 1000 1200 1400

700
900 1100 1300
Wavelenglh (nm)
CIGS178)
22 4
CIGS
CIGS
20144
19
~\'}'!!
;;;;t?
Experimental
Culn(SO.5SeO.5)2
- -Culn(S05Se05)2
(JCPDS 36-1311)
-m)
1
1m
40 45 50 55 60
2 Thela (degree)
3 35
EE
20 25
Culn(SJh )
weighl' 1. 18g
Culn(SSe 03S )2
-- Culn(SO.5 Se O.5>2
(JCPDS 36-1311)
. 8
"hw
oh
40 45 50 55 60
2 Thela (degree)
3 35
20 25
Experimental
Culn05Ga05Se2
CulnO.5Ga05Se2
weighl ' 1.25 9
CulnSe
- - Culn05Ga05Se2
(JCPDS 40-1488)
1n
'
1n
20 25 30 35 40 45 50 55 60
2 Thela (degree)

3.
CulnO.5Ga~(S~SeLts);
welghl ' 1.34 9
':; .:....I;.....li
:
Ea:EU
400
2 Thela (degree)
118
500
600
800 1000 1200 1400

700
900 1100 1300
Wavelenglh (nm)
CIGS178)
22 4
CIGS
CIGS
20144
19
..r
CIGS
CIGS
CIGSSe l!& In Ga
( 10)
CIGS
Kaelin
120
CIGS
4.76% [10] Guo
500-600 "C Culn
CIGSSe
. CIGSSe NaC17k
[Ga]/[In +
Ga] 2.1 % .
7.7%
12.0%1 11 1
1-3
191
2008
CulnSe
. Hillhouse CulnSe
CulnSe 2 *Il CuSe Cu.se Ino
Cu In:Se
if1] 500.C
= 29:43:28 CulI n 0.67 .
450-550.C
CIGSnCdS
I. CulnSe
8.2% [1
pn CIGS
1.5
Lee CIGS
1-3
2.8%
. n CdS 2 .4
pCIGS p
H s e Se
224
utio
n-b
ased d t
~s
ittion
.
~ ;..
seE!13!3;n
CIGSSe
IMoglass
Cd
Sdep
s
itti
AI-ZnO/i-ZnO/CdS J ZnO sputter

ICIGSSe/Mo/glass -
Current collection grid
. 10
20144
CIGS"
121
..r
CIGS
CIGS
CIGSSe l!& In Ga
( 10)
CIGS
Kaelin
120
CIGS
4.76% [10] Guo
500-600 "C Culn
CIGSSe
. CIGSSe NaC17k
[Ga]/[In +
Ga] 2.1 % .
7.7%
12.0%1 11 1
1-3
191
2008
CulnSe
. Hillhouse CulnSe
CulnSe 2 *Il CuSe Cu.se Ino
Cu In:Se
if1] 500.C
= 29:43:28 CulI n 0.67 .
450-550.C
CIGSnCdS
I. CulnSe
8.2% [1
pn CIGS
1.5
Lee CIGS
1-3
2.8%
. n CdS 2 .4
pCIGS p
H s e Se
224
utio
n-b
ased d t
~s
ittion
.
~ ;..
seE!13!3;n
CIGSSe
IMoglass
Cd
Sdep
s
itti
AI-ZnO/i-ZnO/CdS J ZnO sputter

ICIGSSe/Mo/glass -
Current collection grid
. 10
20144
CIGS"
121
200
CIGS
1.98 % [16]
7)<
CIGSSe
NaBH
1. 02%[( 11 )
Cu-In
(150/)
2 CU I1 In
//
CulnSe
CIGSSeIZnS(O , OH)
1 .4 7 %
Tr
112
I nJ
450"(
CIGSSelCdS
2.62 %
200-2501
CIGS 1n S
(13) 0 f 7
iiJ
iJ ll.1 %I
15]
C1GSSe
CIS
2
01
2 AhnCu-In-Se
f'( 1) Akhavan
7%
CulnSe
AM 1. 5
1.9% \1
(b)
(a)
CIGSS
Voc(V)
Jsc
(m Alcm')
FF
PCE (%)
Ref
(c) 30
-20
J Lighl
1- - Dark
.-1
Jsc= 13.96 mAlcm 2

Voc=0.26 V
Efficiency=1.02 o/t ,/
FF=0.28
/ ...
(d)
0.63
28.8
0.657
12
[]
CISe
0.44
33.7
0.55
8.2
[12)
CIGSe
0.305
17.326
0.497
2.62
[13)
Cu ll ln!l
CISe
0.352
34.3
57
[14)
amorphous Cu-In-Se
CISe
265
22.63
33
1.98
[16)
CISe
23.68
31
1.4 7
[17)
CIGSSe
26
13.96
28
1.02
[8)
CISe , CuSe , CU 2 5e.ln Z O J
50
1 CIGSe
40
30
CIGSSe
CIGS
1 cm
B 20
fii-10
2
amorphous Cu-In
CIGSSe
10
-20
-30 -11 --..~-4---.~--.--.--.l

-0 .4
-0.2
o
0.2
0.4
0.6
400
V lage (V)
11
22
600
800
Wavelenglh (nm)
00
1200
CIGSSe18)
CISe
CISe
0.4 76
8.3
0.4 88
1.93
[18)
CISe
CISe
41
16.3
0.46
3.1
[19)
CISe
CISe
34
1 96
45
1.68
[20)
224
20144
123
200
CIGS
1.98 % [16]
7)<
CIGSSe
NaBH
1. 02%[( 11 )
Cu-In
(150/)
2 CU I1 In
//
CulnSe
CIGSSeIZnS(O , OH)
1 .4 7 %
Tr
112
I nJ
450"(
CIGSSelCdS
2.62 %
200-2501
CIGS 1n S
(13) 0 f 7
iiJ
iJ ll.1 %I
15]
C1GSSe
CIS
2
01
2 AhnCu-In-Se
f'( 1) Akhavan
7%
CulnSe
AM 1. 5
1.9% \1
(b)
(a)
CIGSS
Voc(V)
Jsc
(m Alcm')
FF
PCE (%)
Ref
(c) 30
-20
J Lighl
1- - Dark
.-1
Jsc= 13.96 mAlcm 2

Voc=0.26 V
Efficiency=1.02 o/t ,/
FF=0.28
/ ...
(d)
0.63
28.8
0.657
12
[]
CISe
0.44
33.7
0.55
8.2
[12)
CIGSe
0.305
17.326
0.497
2.62
[13)
Cu ll ln!l
CISe
0.352
34.3
57
[14)
amorphous Cu-In-Se
CISe
265
22.63
33
1.98
[16)
CISe
23.68
31
1.4 7
[17)
CIGSSe
26
13.96
28
1.02
[8)
CISe , CuSe , CU 2 5e.ln Z O J
50
1 CIGSe
40
30
CIGSSe
CIGS
1 cm
B 20
fii-10
2
amorphous Cu-In
CIGSSe
10
-20
-30 -11 --..~-4---.~--.--.--.l

-0 .4
-0.2
o
0.2
0.4
0.6
400
V lage (V)
11
22
600
800
Wavelenglh (nm)
00
1200
CIGSSe18)
CISe
CISe
0.4 76
8.3
0.4 88
1.93
[18)
CISe
CISe
41
16.3
0.46
3.1
[19)
CISe
CISe
34
1 96
45
1.68
[20)
224
20144
123
Z!lII
AK1,
(-20%)
W.;
Am Chem Soc , "Synthesis of Cu-In-S
F.; Zogg H.; Meyer, T.;
CIGS
Ternary Nanocrysta1s with Tunable
"Low-cost CIGS solar ce l1 s by paste
Structure and Composition" , Joumal of
coating and selenization" , Thin Solid
The American Chemicas1 Society, 130
Films, 480, 486-490 (2005).
150
nm 3.1%1
Cha1cogenide-hydrazinium(MCC)
i
CulnSe
Energy
[5]Pan, D. C. ; An, L. J.; Sun, Z. M. ; Hou,

Yang ;
Yang, Z. Z.; Lu, Y. F., J
(17) , 5620-5621 (2008).
& Environmental
Science , 4 ,
4929-4932 (2011)
[9]Kael
M.; Rudmann , 0 .; Kurdesau

Tiwa A .
N. ,
[10]Guo, Q.; Ford, G.-M.; Hi l1 house, H.-
[6]Panthani , M. G.; Akhavan , V.;
Agrawa1 ,
R. ulfide
Nanocrysta1
Goodfellow , B.; Schmidtke , J.-P.;
Inks for DenseCu (I n,.,Ga ,)(S ,.ySe,),
[1]Schock, H.-w. ; Noufi, R. "CIGS-based
Dunn , L.; Dodaba1apur, A.; Barbara
Absorber Films and Their Photovoltaic
solar cells for the next millennium" ,
P.-F.; Korgel , B.-A. "Synthesis of
Performance", Nano Letters, 9(8), 3060-
CulnSe MCC
Progress in Photovoltaics , 8 (1), 151-
Cu1nS"
160 (2000).
(CIGS) Nanocrystal 'Inks' for Printable
[11]Guo, Q.; Ford, G.-M.; Agrawal, R.;
CulnS
and Cu(lnxGal-x)Se
3065 (2009).
MCC~
[2]Jackson , P.; Hariskos 0.; Lotter E.; Pate1
Photovo1taics" , Jouma1 ofThe American
Hillhouse H.-W. , "Ink formulation
CulnSe
S.; Wuerz R.; Menner R.; Wischmann
Chemicas1 Society, 130(49) , 16770-
and 10w-temperature incorporation
1.5 6%IJ 1. 68% '
W.; Powalla M. , "New wor1d record
16777 (2008).
of sodium to yie1d 12% efficient
efficiency for Cu (In ,Ga) Se,
thin film
[7 ]Chiang, M.-Y.; Chang, S.-H.; Chen, C.-
Cu (In , Ga)(S , Se ), solar cells from
solar ce l1 s beyond 20%", Progress in
Yuan, F.-W.; Tuan "Quatemary
su1fide nanocrysta1 inks" , Progress
Photovoltaics , 19 (11) , 894-897 (2011)
Culn(S ,.,Sex), nanocrysta1s: facile
in Photovoltaics: Research and
S.-J.; Kar, M.; Shafarman,
heating-up synthesis , band gap tuning ,
Applications 64-71
CIGS
W.N.; Birkmire , R.-W.; Stach , E.-
and gram-scale production" , The Joumal
[12]Jeong, S.; Lee, 8. -S.; Ahn, S.; Yoon,
A.; Agrawal , R.; Hillhouse , H.-W.
of Physica1 Chemistry C, 115(5), 1592-
K.; Seo, Y.-H.; Choi, Y.; Ryu, B.-H.,
"Deve10pment of CulnSe Nanocrystal
1599 (2011).
"An 8.2% efficient solution-processed
and Nanoring Inks for Low-Cost Solar
Ce l1 s", Nano Letters, 8 (9), 2982-2987
C.-C.; Yuan, F.-w.; Chen,
Chiu,
CulnSe nanoparticles" , Energy
(2008).
B.- Y.; Kao , T. -L.; Lai, C.-H.; Tuan,
Environmental Science, 5, 7539-7542,

(2012).
[3]G Q.; m
124
20 (22) , 6906-6910 (2008).
[8]Chang, S.-H.; Chiang, M.- Y.; Chiang,
c. -Y.;
(2013)
CulnSe solar ce l1 based on mu1tiphase
[4]Tang, J.; Hinds , S.; Kelley, S.O.;
H.- Y., "Facile colloida1 synthesis of
Sargent, E.-H. , "Synthesis of Co l1 oidal
quinary CUln,.,Gax(SySe,.y),(CIGSSe)
[13]Lee, J.-H.; Chang, J.; Cha, J.-H .; Lee,
CuGaSe" CulnSe" and Cu(lnGa)Se
nanocrysta1 inks with tunab1e band
Y.; Han , J.-E.; Jung, 0.- Y.; Choi E.C. ;
Nanoparticles", Chemistry of Materials,
gaps for use in low-cost photovoltaics" ,
Hong, B, Large-Scale, "Surfactant-
ISi 224
20144
125
Z!lII
AK1,
(-20%)
W.;
Am Chem Soc , "Synthesis of Cu-In-S
F.; Zogg H.; Meyer, T.;
CIGS
Ternary Nanocrysta1s with Tunable
"Low-cost CIGS solar ce l1 s by paste
Structure and Composition" , Joumal of
coating and selenization" , Thin Solid
The American Chemicas1 Society, 130
Films, 480, 486-490 (2005).
150
nm 3.1%1
Cha1cogenide-hydrazinium(MCC)
i
CulnSe
Energy
[5]Pan, D. C. ; An, L. J.; Sun, Z. M. ; Hou,

Yang ;
Yang, Z. Z.; Lu, Y. F., J
(17) , 5620-5621 (2008).
& Environmental
Science , 4 ,
4929-4932 (2011)
[9]Kael
M.; Rudmann , 0 .; Kurdesau

Tiwa A .
N. ,
[10]Guo, Q.; Ford, G.-M.; Hi l1 house, H.-
[6]Panthani , M. G.; Akhavan , V.;
Agrawa1 ,
R. ulfide
Nanocrysta1
Goodfellow , B.; Schmidtke , J.-P.;
Inks for DenseCu (I n,.,Ga ,)(S ,.ySe,),
[1]Schock, H.-w. ; Noufi, R. "CIGS-based
Dunn , L.; Dodaba1apur, A.; Barbara
Absorber Films and Their Photovoltaic
solar cells for the next millennium" ,
P.-F.; Korgel , B.-A. "Synthesis of
Performance", Nano Letters, 9(8), 3060-
CulnSe MCC
Progress in Photovoltaics , 8 (1), 151-
Cu1nS"
160 (2000).
(CIGS) Nanocrystal 'Inks' for Printable
[11]Guo, Q.; Ford, G.-M.; Agrawal, R.;
CulnS
and Cu(lnxGal-x)Se
3065 (2009).
MCC~
[2]Jackson , P.; Hariskos 0.; Lotter E.; Pate1
Photovo1taics" , Jouma1 ofThe American
Hillhouse H.-W. , "Ink formulation
CulnSe
S.; Wuerz R.; Menner R.; Wischmann
Chemicas1 Society, 130(49) , 16770-
and 10w-temperature incorporation
1.5 6%IJ 1. 68% '
W.; Powalla M. , "New wor1d record
16777 (2008).
of sodium to yie1d 12% efficient
efficiency for Cu (In ,Ga) Se,
thin film
[7 ]Chiang, M.-Y.; Chang, S.-H.; Chen, C.-
Cu (In , Ga)(S , Se ), solar cells from
solar ce l1 s beyond 20%", Progress in
Yuan, F.-W.; Tuan "Quatemary
su1fide nanocrysta1 inks" , Progress
Photovoltaics , 19 (11) , 894-897 (2011)
Culn(S ,.,Sex), nanocrysta1s: facile
in Photovoltaics: Research and
S.-J.; Kar, M.; Shafarman,
heating-up synthesis , band gap tuning ,
Applications 64-71
CIGS
W.N.; Birkmire , R.-W.; Stach , E.-
and gram-scale production" , The Joumal
[12]Jeong, S.; Lee, 8. -S.; Ahn, S.; Yoon,
A.; Agrawal , R.; Hillhouse , H.-W.
of Physica1 Chemistry C, 115(5), 1592-
K.; Seo, Y.-H.; Choi, Y.; Ryu, B.-H.,
"Deve10pment of CulnSe Nanocrystal
1599 (2011).
"An 8.2% efficient solution-processed
and Nanoring Inks for Low-Cost Solar
Ce l1 s", Nano Letters, 8 (9), 2982-2987
C.-C.; Yuan, F.-w.; Chen,
Chiu,
CulnSe nanoparticles" , Energy
(2008).
B.- Y.; Kao , T. -L.; Lai, C.-H.; Tuan,
Environmental Science, 5, 7539-7542,

(2012).
[3]G Q.; m
124
20 (22) , 6906-6910 (2008).
[8]Chang, S.-H.; Chiang, M.- Y.; Chiang,
c. -Y.;
(2013)
CulnSe solar ce l1 based on mu1tiphase
[4]Tang, J.; Hinds , S.; Kelley, S.O.;
H.- Y., "Facile colloida1 synthesis of
Sargent, E.-H. , "Synthesis of Co l1 oidal
quinary CUln,.,Gax(SySe,.y),(CIGSSe)
[13]Lee, J.-H.; Chang, J.; Cha, J.-H .; Lee,
CuGaSe" CulnSe" and Cu(lnGa)Se
nanocrysta1 inks with tunab1e band
Y.; Han , J.-E.; Jung, 0.- Y.; Choi E.C. ;
Nanoparticles", Chemistry of Materials,
gaps for use in low-cost photovoltaics" ,
Hong, B, Large-Scale, "Surfactant-
ISi 224
20144
125
Free Solution Syntheses of Cu (I n, Ga)
B.A. , "Spray-deposited CulnSe
Se )
Nanocrystals for Thin Film
nanocrystal photovoltaics" , Energy&
Solar Cells" , European Journal
Environmetnal Science, 3, 1600-1606
Inorganic Chemistry, 647-651 (2011)
(20 \0)
[l 4]Kind,
c.;
Feldmann C.; Quintilla, A.;
[1 Akhavan
Goodfellow ,
Nanoparti c\ es and It s Use for Thin-
Korgel , B.-A. , "Thickness-limited
Film Manufacturing of CIS Solar
performance of CulnSe nanocrystal
Cells" , Chem Mater, 23 , 5269-5274
photovoltaic devices" , Optical
(2011 )
Express , 18 , A411-A420 (20 \0)
B W.;
V-A.; Panthani , M.-G.;
Ahlswede , E. , "Citrate-Capped Cu ll In,
Reid , D.-K.;
) 1lt()

[15]Wang, L. -P.; Chiang C.-C.; Wang , Y.-
[20]Stolle, C. J.; Panthani , M.-G.; Harvey,
Y.; Yeh, T. -K.; Chen , w. -C.; Tsai , S.-Y. ,
T.-B.; Akhavan , V.-A.; Korgel , B.
"Flexible Cd-free Cu (In, Ga)Se, solar
A. , "Comparison of the Photovoltaic
(I rving Langmuir ' 1881
cells with non-vacuum process Surface
Response of Oleylamine and
1957' 1932) 1928 J (plasma)
and Coatings Technology" , 231 , 590-
Inorganic Li gand-Capped CulnSe
593 (2013).
Nanocrystals" , ACS Applied Materials
Interface, 4 , 2757-2761 (2012).
[16]Ahn , S.; Kim , K.; Cho , A.; Gwak ,

J.; Yun , J.-H.;
Sh
K.; Ahn , S.;
Yoon , K. , "CulnSe, (CIS)Thin Films
Prepared from Amorphous Cu-In-Se

Nanoparti c\ e Precursors for Solar Cell
Application" , ACS Applied Materials&
Interfac 4 1530-1536
(2012).
[17]Liu , S.-H.; Chen , F.-S.; Lu , C.-H. ,

"Synthesis of CulnSe2 films via
selenizing the Cu-In alloy-containing
nanopowders" , Joumal of Alloys and
Compounds, 517 , 14-19 (2012).
[18]Akhavan , V-A.; Goodfellow , B.W.; Panthani , M.-G.; Reid , D.-K.;

Hellebusch , D. J.; Adachi , T.; Korgel ,
125
224
'?
~
il!l. '
Free Solution Syntheses of Cu (I n, Ga)
B.A. , "Spray-deposited CulnSe
Se )
Nanocrystals for Thin Film
nanocrystal photovoltaics" , Energy&
Solar Cells" , European Journal
Environmetnal Science, 3, 1600-1606
Inorganic Chemistry, 647-651 (2011)
(20 \0)
[l 4]Kind,
c.;
Feldmann C.; Quintilla, A.;
[1 Akhavan
Goodfellow ,
Nanoparti c\ es and It s Use for Thin-
Korgel , B.-A. , "Thickness-limited
Film Manufacturing of CIS Solar
performance of CulnSe nanocrystal
Cells" , Chem Mater, 23 , 5269-5274
photovoltaic devices" , Optical
(2011 )
Express , 18 , A411-A420 (20 \0)
B W.;
V-A.; Panthani , M.-G.;
Ahlswede , E. , "Citrate-Capped Cu ll In,
Reid , D.-K.;
) 1lt()

[15]Wang, L. -P.; Chiang C.-C.; Wang , Y.-
[20]Stolle, C. J.; Panthani , M.-G.; Harvey,
Y.; Yeh, T. -K.; Chen , w. -C.; Tsai , S.-Y. ,
T.-B.; Akhavan , V.-A.; Korgel , B.
"Flexible Cd-free Cu (In, Ga)Se, solar
A. , "Comparison of the Photovoltaic
(I rving Langmuir ' 1881
cells with non-vacuum process Surface
Response of Oleylamine and
1957' 1932) 1928 J (plasma)
and Coatings Technology" , 231 , 590-
Inorganic Li gand-Capped CulnSe
593 (2013).
Nanocrystals" , ACS Applied Materials
Interface, 4 , 2757-2761 (2012).
[16]Ahn , S.; Kim , K.; Cho , A.; Gwak ,

J.; Yun , J.-H.;
Sh
K.; Ahn , S.;
Yoon , K. , "CulnSe, (CIS)Thin Films
Prepared from Amorphous Cu-In-Se

Nanoparti c\ e Precursors for Solar Cell
Application" , ACS Applied Materials&
Interfac 4 1530-1536
(2012).
[17]Liu , S.-H.; Chen , F.-S.; Lu , C.-H. ,

"Synthesis of CulnSe2 films via
selenizing the Cu-In alloy-containing
nanopowders" , Joumal of Alloys and
Compounds, 517 , 14-19 (2012).
[18]Akhavan , V-A.; Goodfellow , B.W.; Panthani , M.-G.; Reid , D.-K.;

Hellebusch , D. J.; Adachi , T.; Korgel ,
125
224
'?
~
il!l. '
Surface Trea!m ent Technology
.....
-..
500 'C '
: (1)
(structural morphology)'
' i
; (2)
(plasma modification) ;
(fibronec FN)
()
(l aminin)
Arg-Gly-Asp(RGD)
(plasma
Arg- Gl y- Asp- Ser(RGDS) , Tyr- Il e-
Gly- Se Arg(YIGSR) , Arg- Glu- Asp-
Val(REDV)
(hyaluronic
(collagen) (glycosamino
glycans , GAG) [2-4J
polymerization)
acid)
Yasudafll
Gazicki z
11
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[I .
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1t1iJ1
CF)'!Jft (poly
caprolactone , PCL)l!
CF
PCLl!1.(1 1
i [1]
128
224
20 4
:;:0
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.....
-..
500 'C '
: (1)
(structural morphology)'
' i
; (2)
(plasma modification) ;
(fibronec FN)
()
(l aminin)
Arg-Gly-Asp(RGD)
(plasma
Arg- Gl y- Asp- Ser(RGDS) , Tyr- Il e-
Gly- Se Arg(YIGSR) , Arg- Glu- Asp-
Val(REDV)
(hyaluronic
(collagen) (glycosamino
glycans , GAG) [2-4J
polymerization)
acid)
Yasudafll
Gazicki z
11
[51
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[I .
MCF-7
1t1iJ1
CF)'!Jft (poly
caprolactone , PCL)l!
CF
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128
224
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11;
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l (
30-150
ili
2-20
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(albumin)
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t!lJ
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H!! 'PVDF PSf
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0)( 1) . If
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83
63
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120 180 240
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BC-CF.
1:
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40
30
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20
40
60
80
100
Applied power (W)

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131
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11;
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100
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E
MW
C)
E
R
#
h
Z
Q)
mk(B
m
c
oz
wm
(
)E
(0
(0
)
U
N
NOE
U
PSf'
224
PVDF4
3(a) i
20W 30
PSf' PSf
PVDF
(b)
(a)
J....
E14
12
_n
_08
30 8
= 608
14 ~ f;:J 120 8
= 3008
_6008
I:J
36
t3
2 hr
1 hr
Culture time
3
4 hr
1 hr
2 hr
4 hr
Culture time
(a)PVDF (b)PSf
ili
2014 4
33
1'111'
(Z
)
(PPG)
-@
EE-
(PPA)
(PPP)
6 .6 2 . 0( 5) .
PVD PSf
( 100mm
10 mm)1
PPA
PPG
qu
"
'0
.r
..'
H . N
2 J
"
-.
....-.. . .
10
,--=
HN
PPP
HN./\
20
30
Power (W)
40
50
l1
1 18 1 [ "1
(20J ..
. m
6) . 11
~!ll!
FJ!
DNA [1
(21) 0
134
Mangindaan
6
m~
(precursor) l
: (propargylamine)
(allylamine) (propylamine)
iI!
-{
122) [2! 1 "1
) i(261
ISfi -
\00 mTorrfI!
m:~
0-50W
tr
( 22 4
(a) (b)m
20144
(c) (d)
135
1'111'
(Z
)
(PPG)
-@
EE-
(PPA)
(PPP)
6 .6 2 . 0( 5) .
PVD PSf
( 100mm
10 mm)1
PPA
PPG
qu
"
'0
.r
..'
H . N
2 J
"
-.
....-.. . .
10
,--=
HN
PPP
HN./\
20
30
Power (W)
40
50
l1
1 18 1 [ "1
(20J ..
. m
6) . 11
~!ll!
FJ!
DNA [1
(21) 0
134
Mangindaan
6
m~
(precursor) l
: (propargylamine)
(allylamine) (propylamine)
iI!
-{
122) [2! 1 "1
) i(261
ISfi -
\00 mTorrfI!
m:~
0-50W
tr
( 22 4
(a) (b)m
20144
(c) (d)
135
"
(2012) 4(9): 1112
M.J .
[9]P. A. Ramires , L. Mirenghi , A.R
Romano , F. Palumbo , G. Nicolardi , J
Biomed Mater Res (2000) 51 :535.
[IO]M. T. Khorasani , H.
Mirzad
S. Irani ,
Chem. Ed. (1977) 15(1):8197.

[2]K. Cai , A. Rechtenbach , J . Hao , J
o. Jandt Biomaterials (2005)
26:5960.
[13 ]1. Shah , J r.
(2008) 112:10915
Polymerizati
Technomic
o.
[2 Z.
Zhang , W. Knoll , R. Frch , Sur f.
Coat. Techno l. (2005) 200:993.

[26]0. Mangindaan , W. H . Kuo , C
C. Chang , S. L.
Boyaci , P. Bilkova,
Slavinska , S. Mutlu , J. Zemek , M
M. J.
Wa
Wa
H. C. Liu ,
Surface Coating and
Technology (2011) 206: 1299
66(4) 352.
[3]S. Wang , J. Li , J. Suo, T. Luo Appl Surf

Sci (2010) 256:2293
[14] C. Eyholzer, N. Bordeanu , F. LopezSuevos ,
[4] 11. Miao , R.C. Pangule, E.E. Paskaleva ,

E. E. Hwang , R.S. Kane , RJ. Linhardt ,
o.
Rentsch , T. Zimmennann ,
K. Oksman , Cellulose (2010) 17:19.

[15]G. Helenius , H. Ba?ckdahl , A. Bodin ,
1. S. Oordick , Biomaterials (201 1)
U. Nannmark , P. Gatenholm , B
3(2):9557.
Risbe
[5] H. Yasuda H, M.
Tylus , Eur. Polym. J. (2002) 38:1937
Jn t. Ed. (1 997) 36:2198
[22)H . Biedennan ,
biology and Biotechnology (2005)
Pozni M. Bryj W.
H. 1. Griesser , 1. Phys. Chem. B
Switzerland , 1996
R!B. Applied !icro-
Gancarz , G.
Hambley, P.J. Saddler, Angew. Chem
Publishing Company, Inc. , Basel ,
(2002) II :355
App l. Polym. Sci. (2001) 81: 134 1.
[24]K. Vasilev, L. Britcher, A. Casanal ,
and Plasma
[12]1. Kim , Y. B.Se , Smart Mater Struct
..,
M. L. H. Green , H.A.O. Hill , T.W.
[21]N. Jnagal Plasma Surface Modifcation
44(22):3358.
Gazic
Biomaterials
(1 982) 3:68
[6]P. Favia , R. d' Agostino , Surf Coat
Technol (1 998) 98: II 02.
J Biomed Mater Res A (2006)
5a!l!
Cellulose (2012) 19(6) 1975.

[17]0. Mangindaan , 1. Yared , H.
Journal of Biomedical Materials
EIsevier Academic Pres s (2004) ,
Research PartA(2012) 100A:3177.
Lannutti , H. M. Powell , Integr Biol
'En
Wa
introduction to materials in medicine.
Lee , M. T. Nelson , R. T. Hart , J . J.
[16]H. Kumiawan , J. T. Lai , M. J.
Kurniawan , J. R. Sheu , M. J. Wang ,
[8]B. N. Blackstone , J . J . Willard , C. H.
76A:43I
[7]B. O. Ratner, Biomaterials science: An
London
136
. ...
...' ....... ,.,
Trchova , J. Klimovic , M. Mutlu , J
[2l.
[20]S.C. Tsang , Z.G. Guo , Y.K. Chen ,
A. Bohn. Angewandte Chemie (2005)
[I]H. Yasuda , T. Hsu , J. Polym. Sci. Polym.
R. E. Smalley,
123:6536.
Radiat Phys Chem (2008) 77: 280.
Bronikowsl
J.M. Tour, J. Am. Chem. Soc. (2001)
[11]0. Klemm , B. Heublein , H. P. Fink ,
Bossert, K.
.,
~n
I
[18] W. Huang , S. Taylor, K. Fu , Y. Li n, 0

Zha
T. W. Hanks , A.M.
R Y.
Sun ,
Nano Lett. (2002) 2:311.

[l 9]J. L. Baher, J. Yang , O.V. Kosynkin ,
224
(Universit
du
Maine)
~ m
20144
37
"
(2012) 4(9): 1112
M.J .
[9]P. A. Ramires , L. Mirenghi , A.R
Romano , F. Palumbo , G. Nicolardi , J
Biomed Mater Res (2000) 51 :535.
[IO]M. T. Khorasani , H.
Mirzad
S. Irani ,
Chem. Ed. (1977) 15(1):8197.

[2]K. Cai , A. Rechtenbach , J . Hao , J
o. Jandt Biomaterials (2005)
26:5960.
[13 ]1. Shah , J r.
(2008) 112:10915
Polymerizati
Technomic
o.
[2 Z.
Zhang , W. Knoll , R. Frch , Sur f.
Coat. Techno l. (2005) 200:993.

[26]0. Mangindaan , W. H . Kuo , C
C. Chang , S. L.
Boyaci , P. Bilkova,
Slavinska , S. Mutlu , J. Zemek , M
M. J.
Wa
Wa
H. C. Liu ,
Surface Coating and
Technology (2011) 206: 1299
66(4) 352.
[3]S. Wang , J. Li , J. Suo, T. Luo Appl Surf

Sci (2010) 256:2293
[14] C. Eyholzer, N. Bordeanu , F. LopezSuevos ,
[4] 11. Miao , R.C. Pangule, E.E. Paskaleva ,

E. E. Hwang , R.S. Kane , RJ. Linhardt ,
o.
Rentsch , T. Zimmennann ,
K. Oksman , Cellulose (2010) 17:19.

[15]G. Helenius , H. Ba?ckdahl , A. Bodin ,
1. S. Oordick , Biomaterials (201 1)
U. Nannmark , P. Gatenholm , B
3(2):9557.
Risbe
[5] H. Yasuda H, M.
Tylus , Eur. Polym. J. (2002) 38:1937
Jn t. Ed. (1 997) 36:2198
[22)H . Biedennan ,
biology and Biotechnology (2005)
Pozni M. Bryj W.
H. 1. Griesser , 1. Phys. Chem. B
Switzerland , 1996
R!B. Applied !icro-
Gancarz , G.
Hambley, P.J. Saddler, Angew. Chem
Publishing Company, Inc. , Basel ,
(2002) II :355
App l. Polym. Sci. (2001) 81: 134 1.
[24]K. Vasilev, L. Britcher, A. Casanal ,
and Plasma
[12]1. Kim , Y. B.Se , Smart Mater Struct
..,
M. L. H. Green , H.A.O. Hill , T.W.
[21]N. Jnagal Plasma Surface Modifcation
44(22):3358.
Gazic
Biomaterials
(1 982) 3:68
[6]P. Favia , R. d' Agostino , Surf Coat
Technol (1 998) 98: II 02.
J Biomed Mater Res A (2006)
5a!l!
Cellulose (2012) 19(6) 1975.

[17]0. Mangindaan , 1. Yared , H.
Journal of Biomedical Materials
EIsevier Academic Pres s (2004) ,
Research PartA(2012) 100A:3177.
Lannutti , H. M. Powell , Integr Biol
'En
Wa
introduction to materials in medicine.
Lee , M. T. Nelson , R. T. Hart , J . J.
[16]H. Kumiawan , J. T. Lai , M. J.
Kurniawan , J. R. Sheu , M. J. Wang ,
[8]B. N. Blackstone , J . J . Willard , C. H.
76A:43I
[7]B. O. Ratner, Biomaterials science: An
London
136
. ...
...' ....... ,.,
Trchova , J. Klimovic , M. Mutlu , J
[2l.
[20]S.C. Tsang , Z.G. Guo , Y.K. Chen ,
A. Bohn. Angewandte Chemie (2005)
[I]H. Yasuda , T. Hsu , J. Polym. Sci. Polym.
R. E. Smalley,
123:6536.
Radiat Phys Chem (2008) 77: 280.
Bronikowsl
J.M. Tour, J. Am. Chem. Soc. (2001)
[11]0. Klemm , B. Heublein , H. P. Fink ,
Bossert, K.
.,
~n
I
[18] W. Huang , S. Taylor, K. Fu , Y. Li n, 0

Zha
T. W. Hanks , A.M.
R Y.
Sun ,
Nano Lett. (2002) 2:311.

[l 9]J. L. Baher, J. Yang , O.V. Kosynkin ,
224
(Universit
du
Maine)
~ m
20144
37
R115'f\ 'U lII l:dR.1 X
2014
(|4| |
Heat Exchan
(shell tube heat exchanger)

(1)
E
llS
(plate heat
exchanger, PHE) 2
Jl I 7 1
1923
fl!
(corrugation)
GC-26 SW26 N Tl O'
0.8671 m' , 0.6721 m .6801 NTIO
N Tl O
GC26 67 % ' SW26 25% '
'NTIO GC26 2% SW26
4% 'NTIOE SW{
GC26
(1)
Jl W'
i'l
(2):
138
1j 224
10-25
20144
JII 7 1
39
R115'f\ 'U lII l:dR.1 X
2014
(|4| |
Heat Exchan
(shell tube heat exchanger)

(1)
E
llS
(plate heat
exchanger, PHE) 2
Jl I 7 1
1923
fl!
(corrugation)
GC-26 SW26 N Tl O'
0.8671 m' , 0.6721 m .6801 NTIO
N Tl O
GC26 67 % ' SW26 25% '
'NTIO GC26 2% SW26
4% 'NTIOE SW{
GC26
(1)
Jl W'
i'l
(2):
138
1j 224
10-25
20144
JII 7 1
39
2014
1 4| 1
Special Planning
Heat
_~.WJmlliil
(3):
- 1 /3
1923 Mr.Seligman
1/4-1 15
1930
0.93 ' 10C
0.5 ' 5 0 C
(6)
1m
100
Il< shan and
(a)
(b)
(c)
(e)
(d)
(Shan
and
"
(5): (effectiveness e)
IEI.
Fke"')
WJ
Focke (1)
200 (shear
layer)
: (a)
200 5(a)
(washboard) ; (b)Z (zig-zag) ; (c)
(chevron or herringbone) ; (d)
(protrusions and depressions) ;
(e) (washboard wilh
"
fn {
second corrugation)
1m
{1 "
(oblique washboard)( 4)
Shan and Focke
5(b) e
Focke Knibble l1
10 -800
uXsin2
Focl
ill
u xcos2
1886 1886 Mr. Mal vazin
tJ
=80 0 90 0 Focke Knibbe
(I)=90 0 20
=80 0
PH lm
J!n -
14
~ .
(4):
Exchangers
I 22 4
20144
(2)= 45 o J!n 30 72

141
2014
1 4| 1
Special Planning
Heat
_~.WJmlliil
(3):
- 1 /3
1923 Mr.Seligman
1/4-1 15
1930
0.93 ' 10C
0.5 ' 5 0 C
(6)
1m
100
Il< shan and
(a)
(b)
(c)
(e)
(d)
(Shan
and
"
(5): (effectiveness e)
IEI.
Fke"')
WJ
Focke (1)
200 (shear
layer)
: (a)
200 5(a)
(washboard) ; (b)Z (zig-zag) ; (c)
(chevron or herringbone) ; (d)
(protrusions and depressions) ;
(e) (washboard wilh
"
fn {
second corrugation)
1m
{1 "
(oblique washboard)( 4)
Shan and Focke
5(b) e
Focke Knibble l1
10 -800
uXsin2
Focl
ill
u xcos2
1886 1886 Mr. Mal vazin
tJ
=80 0 90 0 Focke Knibbe
(I)=90 0 20
=80 0
PH lm
J!n -
14
~ .
(4):
Exchangers
I 22 4
20144
(2)= 45 o J!n 30 72

141
2014
14 | h
Heat Exchangers
Special Planning
-~'~"jl
30400 Muley
(a)
Nu
= 1.6774 ();()O.SPTl () 0.144
30 0
< < 60 , 30 ::; Re ::; 400
f=
[(~5+(
(3)
1
7
(4)
30 0
(c)
(b)
<< 60 2 Re 300
0
(a)=90 (b)=45 (c )=800 (Focke 12l)
(3)= tz
0.0003625m2
5(c)
259
(Pr)
1880
Osbom Reynolds l4J
(Reynolds Number) :
Re
Ls
=-=-
(l )
Wang l 'l
142
Nu
= 0.00))
Mul ey l 6 J
8
t
.6
SOLIDWORKS
W th
Length
ThJckne..
Are e
(m)
()
(m)
(m' )
GC-26
375
779
0.008
0.8671
33
0.4 02
802
0.008
0.6808
64'
356
719
0.006
6721
61
FLOW SIMULATION '
i 0.045m'
400 i 130IJ290
NT-l0
2.5mm'
SW-26
22 4
20144
Re 1200-3700
143
2014
14 | h
Heat Exchangers
Special Planning
-~'~"jl
30400 Muley
(a)
Nu
= 1.6774 ();()O.SPTl () 0.144
30 0
< < 60 , 30 ::; Re ::; 400
f=
[(~5+(
(3)
1
7
(4)
30 0
(c)
(b)
<< 60 2 Re 300
0
(a)=90 (b)=45 (c )=800 (Focke 12l)
(3)= tz
0.0003625m2
5(c)
259
(Pr)
1880
Osbom Reynolds l4J
(Reynolds Number) :
Re
Ls
=-=-
(l )
Wang l 'l
142
Nu
= 0.00))
Mul ey l 6 J
8
t
.6
SOLIDWORKS
W th
Length
ThJckne..
Are e
(m)
()
(m)
(m' )
GC-26
375
779
0.008
0.8671
33
0.4 02
802
0.008
0.6808
64'
356
719
0.006
6721
61
FLOW SIMULATION '
i 0.045m'
400 i 130IJ290
NT-l0
2.5mm'
SW-26
22 4
20144
Re 1200-3700
143
mwE
14||
Heat Exchangers i
10
.7
50 0 C'
!IlI
20 0 C .
48
0.10
47
0.09
46
0.08
25 0 C
2
-
-+-
hot channel temperature

channel velocity
cold
.......
45
0.07 ~
44
k-:
Dk
P Dt
fr
Gk
Gb -
P-
(5)
D
rl
t\ 12
p = 11+ l 1+ C (G k + C3E Gb ) - C2E P7
Dt x; L\'k' x;J
M '1:
(6)
43
0.05
42
-0.15
G ;
plate right side
k ;
0.06
()
u kl
= x;l~+ ) xJ +
plate left side
224
plate center
0.04
-0.10
-0.05
0.00
0.05
0.10
0.15
20
0.25
plate position
10
20144
145
mwE
14||
Heat Exchangers i
10
.7
50 0 C'
!IlI
20 0 C .
48
0.10
47
0.09
46
0.08
25 0 C
2
-
-+-
hot channel temperature

channel velocity
cold
.......
45
0.07 ~
44
k-:
Dk
P Dt
fr
Gk
Gb -
P-
(5)
D
rl
t\ 12
p = 11+ l 1+ C (G k + C3E Gb ) - C2E P7
Dt x; L\'k' x;J
M '1:
(6)
43
0.05
42
-0.15
G ;
plate right side
k ;
0.06
()
u kl
= x;l~+ ) xJ +
plate left side
224
plate center
0.04
-0.10
-0.05
0.00
0.05
0.10
0.15
20
0.25
plate position
10
20144
145
2014
14 | h
Special Planning
Heat Exchangers
-~l
16
4500
_Re=1203
4 0
350
1 1
.c
2000
NT10>SW26>GC26 .
Re=1846
- . . . . - Re=2421
Re=3046
- Re=3727
N Tl O
- -
--.
SW26 NTl O
250
('
1500
1 00
SW26 GC26
500
11
12
40
50
?rate Position (mm)
GC26
()
5000
13-15
~-Re=1977
\TK
A
fe
tA\i\ FZAFFZ
\ ~\yv
T
12
3-D
1 00
(FE~EE
3 0
1000
50
1000
13
(2)
2
30
10
Plate Position (mm)
WC
SG
4 nuD
2000
I 1000
(1) SW26GC
N T1 0
2000
mDOJ
3000
M/
6000
4000
FT JZY
SW26
6830AVJJO
-zvo
/
EZ
E
hE 5000
15
wmm rdUJ
6000
+44//h/
I 7000
-Re=1094
10
J
RJ
n
nRFVT
8000
-thnw
20
30
40
Plate Position (mm)
146
'W\-~-Re=2379
32
-Re=1034
0
Re=1551
-.......-Re=1725
4000
(XNE~EE
()
.{g GC26
14
16
NT1 0
224
20144
..
1500 2000 2500 3000

Re
35 o
4000
(3)
147
2014
14 | h
Special Planning
Heat Exchangers
-~l
16
4500
_Re=1203
4 0
350
1 1
.c
2000
NT10>SW26>GC26 .
Re=1846
- . . . . - Re=2421
Re=3046
- Re=3727
N Tl O
- -
--.
SW26 NTl O
250
('
1500
1 00
SW26 GC26
500
11
12
40
50
?rate Position (mm)
GC26
()
5000
13-15
~-Re=1977
\TK
A
fe
tA\i\ FZAFFZ
\ ~\yv
T
12
3-D
1 00
(FE~EE
3 0
1000
50
1000
13
(2)
2
30
10
Plate Position (mm)
WC
SG
4 nuD
2000
I 1000
(1) SW26GC
N T1 0
2000
mDOJ
3000
M/
6000
4000
FT JZY
SW26
6830AVJJO
-zvo
/
EZ
E
hE 5000
15
wmm rdUJ
6000
+44//h/
I 7000
-Re=1094
10
J
RJ
n
nRFVT
8000
-thnw
20
30
40
Plate Position (mm)
146
'W\-~-Re=2379
32
-Re=1034
0
Re=1551
-.......-Re=1725
4000
(XNE~EE
()
.{g GC26
14
16
NT1 0
224
20144
..
1500 2000 2500 3000

Re
35 o
4000
(3)
147
2014
14 | |
Special Planning
Heat
-~.Ell.iiJl
Exchangers
Heat Transfer Equipment
transfer and pressure drop in p1ate
Design , edited by P.K.
condensers", Heat Transfer Engineering ,
Shan , E.C.Subbarao and
14(4): 32-41
R.A.
Mashe1kar , pp. 227-
[6]Mu1ey, A. and Manglik , R. M. , February
254 , Hemisphere Pub1ishing
1999 , "Experimenta1 Study ofTurbu1ent
Corp. ,Washington , DC.
Flow Heat Transfer and Pressure Drop
[2]Focke ,
W. Zacharirad
Transactions of the ASME , 121: II 0-
50
Ang1e on the Thermal-Hydraulic
117
12
r J
10:53-77 ' 2001
28:1469-1479
[3]Focke , W. W. and Knibbe , P
12
[7]
of Hear and Mass Transfer ,
U: W/m2K
12
of the Corrugation Inclination
Exchanger" , Intemational Jouma1
'kW
28
in a P1ate Heat Exchanger with Chevron
12
Pr:
11
P1ates" , Journa1 of Heat Transfer ,
Performance of Plate Heat
m'
21
and Olivier, 1., 1985 , "The Effects
Nu:
A: {
- RUW
12
6
13
G. , 1986 , "Flow Visualization
51
Qc kW
in Parallel-Plate Ducts With
12
[3:
Corrugated Walls" , Journa1 of
52
kglm's
Fluid Mechanics , 165:77-73.

[4]Reyno1ds , 0. , 188 "On
i5 : 'm
the Investigation of the
'Jf
Circumstances Which Determine
kglm's
kglm's
Whether the Motion of Water
p: kg/m'
Shall Be Direct or Sinuous ,
<5
and the Law of Resistance in
Parallel Channels" , Philosophical
Transactions of the Royal Society
ofLondon 174:935-82.
[5]Wan
Z. Z. and Zhao , Z.
12
9
12
12
51
12
12
ENR.Engineering News Record
52
12
12
[1]Shah , R.K. and Forcke W.\\ 1988 "Plate
1993 , "Analysis ofperformances
heat exchanger and their design theory" ,
of steam condensation heat
224
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117
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10:53-77 ' 2001
28:1469-1479
12
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50
117
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10:53-77 ' 2001
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EDX
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Pt
area
diffraction)
10(a)Pt-NIIO-M
measurement XRD ICP HRFTIR
HRTEM
A Molecular DYl1 amics Stlldy , J. Phys
[14]
Chem. B, 106, 2002.
ilf
m (PEMFC)
(1)
lYI ' 2004
Pt 10(b) Optimas []
Pt
215
[2]
(4
0
EZE
64
'
259 '
SY l1 thesis a l1 d charac1erizatio l1 01 Ni-
slabili
Inorganic Materials , 43 , 2007.
[9]A. Ohosh , R.P.
Chit
P. Mukherjee ,
al1 d stabilizatio l1 01 gold l1 a l1 oparticles
mesoporous silica: Effect 01 pore size
lormed by i l1 si1u redllc1io l1 01
captll
Chemical
aqueous chloroaurate
;O I1 S
v!/ thin
Engineering Journal , 144(2): pp.336-
slllface-modijled mesoporolls silica ,
342 , 2008.
Microporous and Mesoporous Materials,

l1
ew lam 01
mesoporolls moleclllar sieves prepared
58(3), pp. 201-211 , 2003

[10]D. Liu , J.H. Lei , L.P. Ouo , X.D.
nu
db
5
" e
0 ?'ku
om
mmM
}
l
)OO
e
(
ic
i
t
nuMN
!a
Rd
nUA
4 nu
>
unU
AU
85
with liqllid c/ys1al templa1es , J. Am
Du and K.
Chem. Soc. , 114 , 1992.
I lII1c1io l1alized mesoporous silica
[5] D. Zhao , J. Feng, Q. Huo , N. Melosh ,

O.H. Fredrickson , B.F.
Chmell
and
(a)
158
[8]T. S. Jiang , Q. ZHao and H. B. Yin ,
M. Sastry and R. Kumar, Preparatio l1
[4]J. S. Beck ct a l., A
10
J. Phys. Chem. B, 109 , 2005
[3]V. Zelenk et al , Amil1 e-modified orded
011 carbo l1 dioxide
High F/ mework Del1si
mesoporous moleclllar sieves with high
2008
0.61 .o .01nm
01 MCM-22 Zeoli1e
S1ruc1 l1 re 01 MCM-70: A Microporolls

Ma1lwith
'
Sercages
[7]0 .J. Kennedy and D. L. Dorset, Cl ys1al
1l1 teractio l1s 011 the Mobility 01 Hep1a l1 e
PI
[6]0. Sastre , C.R.A. Catlow and A
il1 1he
: Pt( 111 ) (200) (222)
10
science, 279, 1998
Pt i
adsorption/desorption
(spot)
Periodic 50 10 300 A I1 gs1rom Pores. ,
Corma, 1l1jluel1 ce ollhe 1111ermolecular
(2)
Pt-NllO-MPS Si 0 Pt
(selected
nm
Pt-N110-MPS HRTEM (a) (b)
224
Zcn
Ordered thiolwith
macrostrllctllre by trlle liqllid c/ystal

1emplati l1 g
r0 1l
Microporous and
O.D. Stucky , Triblock Copolyme/
Mesoporous Materials , 117( 1-2) , pp.
Sy l1 theses 01 Mesoporolls Silica with
67-74, 2009.
20144
159
| | |
6.5 nm'
Ouiantikov 9(a)
0.61
MPS 9(b)
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EDX
0.61 nm
Pt
area
diffraction)
10(a)Pt-NIIO-M
measurement XRD ICP HRFTIR
HRTEM
A Molecular DYl1 amics Stlldy , J. Phys
[14]
Chem. B, 106, 2002.
ilf
m (PEMFC)
(1)
lYI ' 2004
Pt 10(b) Optimas []
Pt
215
[2]
(4
0
EZE
64
'
259 '
SY l1 thesis a l1 d charac1erizatio l1 01 Ni-
slabili
Inorganic Materials , 43 , 2007.
[9]A. Ohosh , R.P.
Chit
P. Mukherjee ,
al1 d stabilizatio l1 01 gold l1 a l1 oparticles
mesoporous silica: Effect 01 pore size
lormed by i l1 si1u redllc1io l1 01
captll
Chemical
aqueous chloroaurate
;O I1 S
v!/ thin
Engineering Journal , 144(2): pp.336-
slllface-modijled mesoporolls silica ,
342 , 2008.
Microporous and Mesoporous Materials,

l1
ew lam 01
mesoporolls moleclllar sieves prepared
58(3), pp. 201-211 , 2003

[10]D. Liu , J.H. Lei , L.P. Ouo , X.D.
nu
db
5
" e
0 ?'ku
om
mmM
}
l
)OO
e
(
ic
i
t
nuMN
!a
Rd
nUA
4 nu
>
unU
AU
85
with liqllid c/ys1al templa1es , J. Am
Du and K.
Chem. Soc. , 114 , 1992.
I lII1c1io l1alized mesoporous silica
[5] D. Zhao , J. Feng, Q. Huo , N. Melosh ,

O.H. Fredrickson , B.F.
Chmell
and
(a)
158
[8]T. S. Jiang , Q. ZHao and H. B. Yin ,
M. Sastry and R. Kumar, Preparatio l1
[4]J. S. Beck ct a l., A
10
J. Phys. Chem. B, 109 , 2005
[3]V. Zelenk et al , Amil1 e-modified orded
011 carbo l1 dioxide
High F/ mework Del1si
mesoporous moleclllar sieves with high
2008
0.61 .o .01nm
01 MCM-22 Zeoli1e
S1ruc1 l1 re 01 MCM-70: A Microporolls

Ma1lwith
'
Sercages
[7]0 .J. Kennedy and D. L. Dorset, Cl ys1al
1l1 teractio l1s 011 the Mobility 01 Hep1a l1 e
PI
[6]0. Sastre , C.R.A. Catlow and A
il1 1he
: Pt( 111 ) (200) (222)
10
science, 279, 1998
Pt i
adsorption/desorption
(spot)
Periodic 50 10 300 A I1 gs1rom Pores. ,
Corma, 1l1jluel1 ce ollhe 1111ermolecular
(2)
Pt-NllO-MPS Si 0 Pt
(selected
nm
Pt-N110-MPS HRTEM (a) (b)
224
Zcn
Ordered thiolwith
macrostrllctllre by trlle liqllid c/ystal

1emplati l1 g
r0 1l
Microporous and
O.D. Stucky , Triblock Copolyme/
Mesoporous Materials , 117( 1-2) , pp.
Sy l1 theses 01 Mesoporolls Silica with
67-74, 2009.
20144
159

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.

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[11]S.U. Srisuda and B. Virote , One-
Pot Synthesis of Organic- Inorganic

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Environmenta1 Engineering Science ,
cO l1 ditio l1 s
ZOUct ofsYl1this
011
the mesoscopical
order of mesopo /"OlI S silica SBA-15

fll l1 ctio l1 alized by ami l1 0
grol
[13]S. W. Song, K. Hidajat and S. Kawi ,
F lIl1 ctio l1 alized SBA-15 Materials
C rriers
Properties
for CO l1 trolled Drllg
011
Matrix-Drllg Inter-
actio l1s , Langmuir, 21 , 2006

L
S.
C. H.
Huan
C.K. Huang ,
Hwang , Chelati l1 g age l1 t
assisted
4.
microw ve
:I1
IC 111- V
(1)
(2) ; (3)
(
)
fo/' low temperatll/'e polymer

elect/'olyte fllel cells, E1ectrochem ,
Comm., 200911 (2009) 1792-1795.
sY l1 thesis of
carbo l1 sllpported Pt l1 a l1 oparticles
w 1
D e/ ivery: 1I1fllle l1 ce of S lI rface
[14]S.J.
1.
Sol-Ge1 Sci Techn. , 39 , 2006
3 E
4 E
O
O
@@
Chen and J .x.
as
25 , 2008.
[12]Q. Wei , Z. R. Nie , Y. L. Hao , L. Liu , Z .x
224
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Pot Synthesis of Organic- Inorganic

brid
Mesopo /"OlIS Materials for the
Adsorptio l1 of Formaldehyde Vapor,

Environmenta1 Engineering Science ,
cO l1 ditio l1 s
ZOUct ofsYl1this
011
the mesoscopical
order of mesopo /"OlI S silica SBA-15

fll l1 ctio l1 alized by ami l1 0
grol
[13]S. W. Song, K. Hidajat and S. Kawi ,
F lIl1 ctio l1 alized SBA-15 Materials
C rriers
Properties
for CO l1 trolled Drllg
011
Matrix-Drllg Inter-
actio l1s , Langmuir, 21 , 2006

L
S.
C. H.
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VACUUM EMULSIFYING MIXER
EE
MAGNETIC MIXING TANK
Magnetlc Mlxlng Vessel
'!!i
. 242 389 46
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SHANG YUH MACHINE CO. , LTD.
:244 14
lIt: (886-2)8601 - 4966 ()
: (886-2)8601-2866
COMPANY : NO.46 , LN .389 , HUACHENG RD.. XINZHUANG DIST.,

NEW TAIPEI CITY 242 , TAIWAN
FACTORY : NO. 14 , GONG 8th RD.. GONG 2 INDUSTRIAL DIS T.,
lI NKOU D IST, NEW TAIPEI CITY 244 , TAtWAN
TEL : (886-2)8601-4966 (REP.) FAX : (886-2)8601-2866
http://www.sha ng-yuh.com
E-mail: shang-yuh@shang-yuh_com
DAMNGHEATTEE-MACHINEKYE0., LTD IlIN

227 24 9 1
TEL 863 666
Z:99
~v. ~'~" IIII(i
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1;..d 1
100 CGMP() CIP SIP Jj K
; (OQ) (IQ) (OQ) ASME-BPE PIC/S

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()
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SY-RBV
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TRIP LlCITY CONE MIXER
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HIGH SPEED-MIXING
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MULTIBLEND
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MAGNETIC MIXING TANK
Magnetlc Mlxlng Vessel
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. 242 389 46
..
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SHANG YUH MACHINE CO. , LTD.
:244 14
lIt: (886-2)8601 - 4966 ()
: (886-2)8601-2866
COMPANY : NO.46 , LN .389 , HUACHENG RD.. XINZHUANG DIST.,

NEW TAIPEI CITY 242 , TAIWAN
FACTORY : NO. 14 , GONG 8th RD.. GONG 2 INDUSTRIAL DIS T.,
lI NKOU D IST, NEW TAIPEI CITY 244 , TAtWAN
TEL : (886-2)8601-4966 (REP.) FAX : (886-2)8601-2866
http://www.sha ng-yuh.com
E-mail: shang-yuh@shang-yuh_com
DAMNGHEATTEE-MACHINEKYE0., LTD IlIN

227 24 9 1
TEL 863 666
Z:99
~v. ~'~" IIII(i
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E-mail: heate ns24.hinet.net
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KSB
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E-mail:
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http://www. blotek.com.tw
BSF .
BPA
"'" www.mmmpc.com .tw . TEL : 02-8712-5539 (686 688)
BUTK
Br-E--
..11
BLOTEK ELECTRIC MACHINERY CO. ,LTD
111 53 8 49 1
49. LANE 8. TIEN-MOU E. RD.. TAIPEI. TAIWAN. 11153

TEL: (02)2873-4729 Rep. FAX:(02)2875-1068
11
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()l~68 ..'I .li!I. l~ li!!!
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KSB
a
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E-mail:
.W!
http://www. blotek.com.tw
BSF .
BPA
"'" www.mmmpc.com .tw . TEL : 02-8712-5539 (686 688)
BUTK
Br-E--
..11
BLOTEK ELECTRIC MACHINERY CO. ,LTD
111 53 8 49 1
49. LANE 8. TIEN-MOU E. RD.. TAIPEI. TAIWAN. 11153

TEL: (02)2873-4729 Rep. FAX:(02)2875-1068
11
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D.O.P.TEST 99.97%
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323175.911! TEL:(02)6.228896 FAX:()22812792 E.maHlrenyih@ms62. h1net.net http://www.ren.yih m.twl

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323175.911! TEL:(02)6.228896 FAX:()22812792 E.maHlrenyih@ms62. h1net.net http://www.ren.yih m.twl

12
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Tempera o.lerw>0"
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auxiliary power TEMPTROl
JIHa
valve
Bulteryvalve
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Stop valv th gland seal
ZIVA
Bellows valve
FABA".PIUS , FABA"
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SAFE FN (FIno.
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CONA.-Control
CONA' . -in-Qne"
NmM
M
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Ml
14
TEL:04-2359-7300
FAX:04-2359-7305 TEL:06-2719-900
http://www.airpower.com.tw
E-mail :email@airpower.com.tw
eam pw
TEL:03-4340-836
*11"
Steam trap th multi-valvlng

technolog y( lncl. spvalve.
iner eck va. drain valve)
407 + 39 1
l -In.On8"*11
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CODI"
43 LRMV
4 H U
~~Pt
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Sleam traps (mechamcal ballfloat I

thennostatic I blmeta1lic d
membrane I therm amic)
CONA
www.airpower.com.tw
l*
PE =I :::I IL'.
www.ari-armaturen.com
15
|zzzg I I ARI
~~
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JIHa
auxiliary power TEMPTROl
JIHa
valve
Bulteryvalve
litX
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ZIVA
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FABA".PIUS , FABA"
lIi
Sty val'l"'~I
5AFE
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50 ty valves (API 526)
SAFE FN (FIno.
50 ty 1'1'"
SAFETCP
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STOB
f!Xil
"
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CONA.-Control
CONA' . -in-Qne"
NmM
M
GH
Ml
14
TEL:04-2359-7300
FAX:04-2359-7305 TEL:06-2719-900
http://www.airpower.com.tw
E-mail :email@airpower.com.tw
eam pw
TEL:03-4340-836
*11"
Steam trap th multi-valvlng

technolog y( lncl. spvalve.
iner eck va. drain valve)
407 + 39 1
l -In.On8"*11
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CODI"
43 LRMV
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www.airpower.com.tw
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www.ari-armaturen.com
15
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MODEL:CS~l 6
: 20-265ml./min ~-
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: 0.85-7mln
.100L
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43-1080ml./mln
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110
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FAX: (02)2995-7458 - 2995-6453
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E.mail: shL.rryi Oshu'l}
TEL: (07)226-9896
TEL: 592-710-9991-3
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TEL: 20-8551-2161
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TEL: 86-512 -6 257-0717
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mu
16
FAX: 20-8758-3416
18-23
(02)
2908-6129
:(02) 2904-2474
http://0229086129.com.tw/about-us_html
E-mail: n008009492@so-netnettw
17
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MODEL:CS~l 6
: 20-265ml./min ~-
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FAX: (02)2995-7458 - 2995-6453
E i 1: shl.Ily imc 5.h i tnet(
E.mail: shL.rryi Oshu'l}
TEL: (07)226-9896
TEL: 592-710-9991-3
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.
FAX: 592-710-9996
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FAX: 20-8758-3416
18-23
(02)
2908-6129
:(02) 2904-2474
http://0229086129.com.tw/about-us_html
E-mail: n008009492@so-netnettw
17
A TAIBON:G
C-20 ( DeDuster@)
peUetron
240mm
9kg
; SUS304 , SUS316 , SUS316L , SUS904 , SUS904L , SM0254 , Titanium ,

Titanium-Paladium , Nickel , Nickel alloy, Hastelloy-C , Hastelloy-B
I! :IE
:"am OV 220V
3A-5m 3 /hr
; NBR , EPDM , CR , Butyl , Viton- , Teflon , Silicon , Reflon-.
SPIRAL
PLASTIC
PLAIN PLATE
M.45kg/c !Tl'
450'C
PVDF PP PE
Mmmaq
900'C
.30'C~+ 140'C
1. 5-2bar
peUetron /
' z

(02)2708.7272
http://www.seru.com.tw
f
-
(02)2702.0199
E-mail:seru@ms37.hine t. net
SERU INTERNATIONAL CO. ,LTD.
201 6
nHHU3
nuno
E I1
700.C
(Ta)
230'C
MM
3mm--3m
-++
TANTALUM HEAT EXCHANGER
GRAPHITE
mm
ALL WELDED WIDE GAP

11
W ite: WWW.tc .com
19
A TAIBON:G
C-20 ( DeDuster@)
peUetron
240mm
9kg
; SUS304 , SUS316 , SUS316L , SUS904 , SUS904L , SM0254 , Titanium ,

Titanium-Paladium , Nickel , Nickel alloy, Hastelloy-C , Hastelloy-B
I! :IE
:"am OV 220V
3A-5m 3 /hr
; NBR , EPDM , CR , Butyl , Viton- , Teflon , Silicon , Reflon-.
SPIRAL
PLASTIC
PLAIN PLATE
M.45kg/c !Tl'
450'C
PVDF PP PE
Mmmaq
900'C
.30'C~+ 140'C
1. 5-2bar
peUetron /
' z

(02)2708.7272
http://www.seru.com.tw
f
-
(02)2702.0199
E-mail:seru@ms37.hine t. net
SERU INTERNATIONAL CO. ,LTD.
201 6
nHHU3
nuno
E I1
700.C
(Ta)
230'C
MM
3mm--3m
-++
TANTALUM HEAT EXCHANGER
GRAPHITE
mm
ALL WELDED WIDE GAP

11
W ite: WWW.tc .com
19
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6.
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8.
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126 6
No.6, ln. J26, 00119 Rd.. DOnShU D NewTaipeiCity25 1. Ton
(02)8809.1100
'U : (02)8809-1005
http://www.maglcpump.com.tw
21
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1.
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3.
4. l*
5. SCS14
6.
7.
8.
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No.6, ln. J26, 00119 Rd.. DOnShU D NewTaipeiCity25 1. Ton
(02)8809.1100
'U : (02)8809-1005
http://www.maglcpump.com.tw
21
Er.....:1
Globe Valves
FABA
r~..-1:1 ~~.
Control valves
FABA 90'
spindle
STEV I
Supra 1and "".
1 eee
STEVI
Butterfly Valves
Safety valves
Pducl l19
valves
ZETRIX.
e
PREDU
Steamtraps
,
CONA ' B
!l.1>tl
ft
metat to
www.refsch.com
... 5 1: h@
me 2
2RI 111111'1'
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RANGERQCT
Control valves
Model 520/521
I\IItII! M
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cv710' 11:I !I! ....Os
Iilt
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8.211'"
Croesus lndustrial Corporation

a 144 5 5 9 3
TEL:(02)2557-9955
TEL:(07)312-1609
FAX:(02)2557-9959.2557-9653
E-mal:croesus9@ms35 .hnet.net
E-mail:croesus_tpe@yahoo.com.tw
22
256 9
FAX ( 07)312- 1 664
E-mail :croesus .ka@msa .hnet.net
Q I
tNlAYmmON
: 02-2771-8337 : 03-552 5300

: 04-2206-1113 : 07-555-2355
htt : 11 www .iSu n ~t~y":' m tw

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!f.l
,23
Er.....:1
Globe Valves
FABA
r~..-1:1 ~~.
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FABA 90'
spindle
STEV I
Supra 1and "".
1 eee
STEVI
Butterfly Valves
Safety valves
Pducl l19
valves
ZETRIX.
e
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,
CONA ' B
!l.1>tl
ft
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www.refsch.com
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Model 520/521
I\IItII! M
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8.211'"
Croesus lndustrial Corporation

a 144 5 5 9 3
TEL:(02)2557-9955
TEL:(07)312-1609
FAX:(02)2557-9959.2557-9653
E-mal:croesus9@ms35 .hnet.net
E-mail:croesus_tpe@yahoo.com.tw
22
256 9
FAX ( 07)312- 1 664
E-mail :croesus .ka@msa .hnet.net
Q I
tNlAYmmON
: 02-2771-8337 : 03-552 5300

: 04-2206-1113 : 07-555-2355
htt : 11 www .iSu n ~t~y":' m tw

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N.O
F
:max.
400m3/hr
$:~
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Join Force Bellows Co. ,Ltd.

56
TEL:(02)2496-5478 FAX:(02)2496-6249
E-mail:bellows@seed.ne t. tw
http://www.jfbellows.com.tw
A~ :
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3.
3.
2.
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0.5 x 2 ply
1
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Prodynamic
K-Mate Corp.
806 2 9 6 29
TE L: (07)821-7128 http://www.kmate.com.tw
FAX:(07)821-4659 E-mail:kmate@ms31.hine t. net
25
te.n~~ (~A:4D
-
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alIRKRL
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10m icrons()
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N.O
F
:max.
400m3/hr
$:~
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Join Force Bellows Co. ,Ltd.

56
TEL:(02)2496-5478 FAX:(02)2496-6249
E-mail:bellows@seed.ne t. tw
http://www.jfbellows.com.tw
A~ :
1 i
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3.
3.
2.
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0.5 x 2 ply
1
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Prodynamic
K-Mate Corp.
806 2 9 6 29
TE L: (07)821-7128 http://www.kmate.com.tw
FAX:(07)821-4659 E-mail:kmate@ms31.hine t. net
25
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. .
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TEL:(07)8214538
FAX:(07)8232238
HEF
ii:11:"
. (stripper)
Ii1iIl! IPA(l!l)
GMMP
GMB
;&:.80.C 280'C
jtg:-20 C-+130.C
316
:316
: 90W. 200W.4 OW.550W
1&1 1 31M
lB: :95 Ll min
; :8M
:20
GMP
GMSW
-8 'C-+280 'C
; 0 'C-+230 'C
316
316
1-7.5HP
11 M
lil:600 Ll min
-80 'C 280 'C

:316
:7.5HP-25HP
11 : 133M
5jft fil 400 Ll min
.E
Ll mln
r ~~P_~~
rJfr
C]S
60W
PLC
l 1-5HP
11 :91M
~ 56
L1 min
"'8
TEL: 07-3720913
/ j
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i!
80~m
. i
FAX: 07-3720923
: 814 t lB21395 43.17
http://www.rlcopump.com.tw
rf l.RO FILTRATION INDU$TRY CO., LTD.

402 787 21 2
TEl:+88e4-2262 22
26
FAX: +886-4 -22625922

27
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. .
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TEL:(07)8214538
FAX:(07)8232238
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GMMP
GMB
;&:.80.C 280'C
jtg:-20 C-+130.C
316
:316
: 90W. 200W.4 OW.550W
1&1 1 31M
lB: :95 Ll min
; :8M
:20
GMP
GMSW
-8 'C-+280 'C
; 0 'C-+230 'C
316
316
1-7.5HP
11 M
lil:600 Ll min
-80 'C 280 'C

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11 : 133M
5jft fil 400 Ll min
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Ll mln
r ~~P_~~
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60W
PLC
l 1-5HP
11 :91M
~ 56
L1 min
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TEL: 07-3720913
/ j
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80~m
. i
FAX: 07-3720923
: 814 t lB21395 43.17
http://www.rlcopump.com.tw
rf l.RO FILTRATION INDU$TRY CO., LTD.

402 787 21 2
TEl:+88e4-2262 22
26
FAX: +886-4 -22625922

27
~~~ 1
MITAB-1l!)' 17
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11
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02-87126569
1
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BUSCH ;
BUSCH BUSCH
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90-100
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70-80
60-70
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70-80
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80-90
70-80
670
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60-70
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BUSCH
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BUSCH :!iliFl
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De Dietrich 0
PROCESS SYSTEMS
riiI
......--~r
_ Th ermal 5hock 220 'C
iI . 1
: 2.3" (5Bmm) 14.0" (1 OOmm)

: 1m
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2.3"(5Bmm)
11: : 1
:3 4 5 6 8.
.: DC4-20mA 1DC-10V;
RS-4B5 ;.
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..'
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LWC Laser Welded Cassette
E-mail E-mail
{ CARBONE LORRAINE )=
* LE CARBON LORRAINE
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jj.
Graphilor 3 a decisive step against corrosion

l!i)
Pressu Vessels
||
HEAT EXCHANGERS:BlocklPlate(welded);Shell & Tube;Columns:Piplng Flttings

MATERIALS:Graphite ,SIC.Tantalum.Zlrconium ,Ti tanlum , Nickel alloys.Stainless steel , Carbon steel.
2 1 0 F - 3
TEL: 0 2- 8 2 2 61255 -8
FAX:02-82261259
h ttp: IIwww.tenanic.com
E-ma il :te na n ic@seed.ne 1. tw
l &HERMES (0.. LTD.
103 144 6 12 1
P.O.BOX68-651 TAIPEI 103 , TAIWAN.

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46
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化工月刊 14年04月

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]

I.ti:l lll MII.t.~[ilji1 1

KAORI HEAT TREATMENT CO. , LTD

!l; N'6 !!!!IM 11

E-mail : rrvnn 1 1@mrrmpc.com)

Head Qfflce: 3F.. No.Sl , Se c. 4, Nanjing E. Rd. , songshan

146 15500 16700

aa. " .11

TEL: 04-2359 3278 FAX: 04-2359 7578

: 87125539 855 857

(Measurement Systems Analysis) (Capability

11 500~ 90% 4000

Quality Trainer by Minitab"' Minitab

Quality Companion by Minitabe ."

TEL (02)2662-0775 FAX

... 11m "'''''M .M...... .""'.. .... ............".. m

HONG'lSHUEN INDU 5;rRIAL CO. lD.

tap density (XRD)

tap density (XRD)

-Ni(OH) ' y-NiOOH

-Ni(OH) ' y-NiOOH

Ni(SO,),1 DPE-31 KOH , 1.2 M

inate precipitat melh

Ni(NO, )jNH,OH , 0.2 M

Ni(NO,)j urea , 0.1 M

Ni(CH ,COO)j L-argininel

Ni(NO,)j elhylene diaminel

N(NO )6H O 28-

Ni(SO,),1 DPE-31 KOH , 1.2 M

inate precipitat melh

Ni(NO, )jNH,OH , 0.2 M

Ni(NO,)j urea , 0.1 M

Ni(CH ,COO)j L-argininel

Ni(NO,)j elhylene diaminel

N(NO )6H O 28-

38-0715> Ni(OH) 1 0.75H O - Nickel Hydroxide Hydrate

Tap densityjj(A B*tl

Two - Thets (deg)

38-0715> Ni(OH) 1 0.75H O - Nickel Hydroxide Hydrate

Tap densityjj(A B*tl

Two - Thets (deg)

chtstrukturen mit brucithnlichen

density spherical and non-spherical

Schichtionen [Me(I1) l-xMe(III)x(OH),]

Ni(OH), as cathode materials for nickel-

x-, 24 (1970) , 99-113.

metal hydride batteries , Journal of

[4]P. Axmann , O. Glemser , Nickel

Itap densityl XRD

hydroxide as a matrix for unusual

[9]X. Yue , J. Pan , Y. Sun , Z. Wang ,

valencies: the electrochemical behavior

Synthesis and electrochemical properties

of metal (III) - ion - substituted nickel

hydroxides of pyroaurite type , Journal

with super high charge-discharge speed,

of AlI oys and Compounds , 246 (1997) ,

lndustrial & Engineering Chemistry

Research 51 (2012) , 8358-8365.

Hydrogen Energy 34 (2009) , 473-780.

cyc1 e 330 mAhl

nickel hydroxide prepared by supersonic

[1I ]Z. Zhu , Y. Zhang , Y. Zhang , H. Liu , C