Department of Electronics& Communication Engineering

PVP Siddhartha Institute of Technology

Electronic Devices and Circuits

Programme: B.Tech (ECE)
Course : (Core/elective/depth/breadth)

Year : II / IV
Credits :4

Semester :1
Hours :4+1

Course Context and Overview (100 words):

In this course, students will have an introduction to the principle of electricity, motion of electron
in different fields. Students attain the knowledge of Fermi levels, diffusion, drift, construction
and operation of different diodes. Students will analyze the characteristics of different
semiconductor devices like diodes, transistors. The working and characteristics of different
rectifiers, small signal amplifiers will be studied in detail.
Prerequisites Courses: Semiconductor physics
Course Outcomes:
At the end of the course, students are able to
CO-1: Define and analyze the deflection of an electron under the influence different fields.
CO-2: Explain the characteristics of different semiconductor devices.
CO-3: Design and analyze different rectifiers and filters.
CO-4: Explain the characteristics of various transistors and small signal amplifiers
Course Contents:
Lecture
Hours

Topics
UNIT 1: Electron Ballistics and Applications:
1.1 Force on Charged Particles in Electric field, Constant Electric Field

1.2 Potential, Relationship between Field Intensity and Potential,

1.3 Two Dimensional Motion of a particle

1.4 Electrostatic Deflection in Cathode ray Tube, Force in Magnetic Field,

Motion in Magnetic Field,

1.5 Magnetic Deflection in CRT, Magnetic Focusing

1.6 Parallel Electric and Magnetic fields and Perpendicular Electric and
Magnetic Fields.
1.7 CRO block diagram

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Tutorial

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Department of Electronics& Communication Engineering

PVP Siddhartha Institute of Technology

UNIT-II: Review of Semi Conductor Physics

2.1 Insulators, Semi conductors, and Metals classification using Energy
Band Diagrams
2.2 Mobility and Conductivity, Electrons and holes in Intrinsic Semi
conductors
2.3 Extrinsic Semi Conductor, (P and N Type semiconductor)

2.4 Hall effect, Generation and Recombination of Charges

2.5 Diffusion, Continuity Equation, Injected Minority Carriers

2.6 Law of Junction,Fermi Dirac Function,

2.7 Fermi level in Intrinsic and Extrinsic Semiconductor

Tutorial

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UNIT-III: Junction Diode Characteristics and Special Diodes

3.1 Open circuited P N Junction,

3.2 Forward and Reverse Bias, Current components in PN Diode

3.3 Diode Equation, Volt-Ampere Characteristic

3.4 Temperature Dependence on V I characteristic, Step Graded Junction

3.5 Diffusion Capacitance and Diode Resistance (Static and Dynamic)

3.6 Energy Band Diagram of PN Diode

3.7 Avalanche and Zener Break Down, Zener Characterisitics,

3.8 Tunnel Diode, Characteristics with the help of Energy Band Diagrams

3.9 Varactor Diode, LED

3.10 PIN Diode, Photo Diode

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UNIT-IV: Rectifiers and Filters

4.1 Half wave rectifier, ripple factor

4.2 full wave rectifier (with and without transformer), Harmonic components
in a rectifier circuit
4.3 Inductor filter, Capacitor filter

4.4 L- section filter, - section filter

4.5 Multiple L- section and Multiple section filter

Course Design Template version 1.0

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Department of Electronics& Communication Engineering

PVP Siddhartha Institute of Technology

4.6 comparison of various filter circuits in terms of ripple factors

2
4.7 Simple circuit of a regulator using zener diode, Series and Shunt voltage regulators
4.8 Simple problems on magnetic circuits

UNIT-V: Transistor Characteristics

5.1 Junction transistor

5.2 Transistor current components, Transistor as an amplifier

5.3 Characteristics of Transistor in Common Base and Common Emitter

Configurations
5.4 Analytical expressions for Transistor Characteristics

5.5 Punch Through Reach Through

5.6 Photo Transistor, Typical transistor junction voltage values

5.7 Tutorial

UNIT-VI: FET Characteristics

6.1 JFET characteristics (Qualitative and Quantitative discussion),

6.2 Small signal model of JFET

6.3 MOSFET characteristics (Enhancement mode)

6.4 MOSFET characteristics (Depletion mode)

6.5 Problems on FET

6.6 Introduction to SCR and UJT and their characteristics

6.7 Tutorial

UNIT-VII: Transistor Biasing and Thermal Stabilization

7.1 Transistor Biasing and
Thermal Stabilization

7.2 Operating point, Basic Stability

7.3 Collector to Base Bias

7.4 Self Bias

7.5 Stabilization against variations in VBE,, and for the self bias circuit

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Department of Electronics& Communication Engineering

PVP Siddhartha Institute of Technology

7.6 Stabilization factors, (S, S', S'), Bias Compensation

7.7 Thermistor and Sensitor compensation
7.8 Compensation against variation in VBE, Ico,, Thermal runaway, Thermal stability
UNIT-VIII: Small signal low frequency Transistor models
8.1 Two port devices and the Hybrid model

8.2 Transistor Hybrid model

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8.3 Determination of h-parameters from characteristics, Measurement of h-parameters
8.4 Conversion formulas for the parameters of three transistor configurations

8.5 Analysis of a Transistor Amplifier circuit using h- parameters

8.6 Comparison of Transistor Amplifier configurations

LEARNING RESOURCES:
Text Books
1. Electronic Devices and Circuits J. Millman, C.C. Halkias, Tata Mc-Graw Hill
Reference
1. Electronic Devices and Circuits K Satya Prasad, VGS Book Links
2. Integrated Electronics Jacob Millman, Chritos C. Halkies,, Tata Mc-Graw Hill, 2009
3. Electronic Devices and Circuits Salivahanan, Kumar, Vallavaraj, TATA McGraw Hill,
Second Edition
4. Electronic Devices and Circuits R.L. Boylestad and Louis Nashelsky, Pearson/Prentice
Hall,9thEdition,2006
5. Electronic Devices and Circuits -BV Rao, KBR Murty, K Raja Rajeswari, PCR Pantulu,
Pearson, 2nd edition

Program Outcomes (POs):

Student will be able to :
a. Demonstrate knowledge of Mathematics, Random Process, Numerical Methods, Physics
and Chemistry

Course Design Template version 1.0

Department of Electronics& Communication Engineering

PVP Siddhartha Institute of Technology

b. Design analog and digital electronics circuits and conduct experiments, analyze and
interpret data.
c. Develop Communication systems those meet desired specifications and requirements
d. Visualize and work on laboratory & multi-disciplinary tasks.
e. Identify, Formulate and Solve Communication Engineering problems
f. Understand Professional and Ethical responsibilities
g. Communicate effectively in both verbal and written form.
h. Have confidence for self-education and ability for life-long learning
i. Understand impact of engineering solutions on the society and also will be aware of
contemporary issues.
j. Demonstrate skills to use modern engineering tools, software and equipment to analyze
problems in Communication Engineering.
k. Participate and succeed in competitive examinations like GATE, GRE.
Table: Mapping of course outcomes with programme outcomes
(CO Competency PO Matrix, Indicate the correlation strength in the scale of 1-3)
1: weak
2: Moderate
3: Strong
COS
/POS
CLO 1
CLO 2
CLO 3

CLO 4

M1 - Lecture interspersed with discussions

M2 - Lecture with a quiz
M3 - Tutorial
M4 Demonstration (Models/Charts/Field Visit)
M5 - Group Discussion
M6 - Group Assignment /Projects
M7 - Presentation (PPT)
M8 Asynchronous Discussions
M9 -Video Lectures (NPTEL, SONET, MIT etc)
Instructional Methods:
COs CLO/ Competency

Instructional
Methods

Course Design Template version 1.0

Department of Electronics& Communication Engineering

PVP Siddhartha Institute of Technology

CO 1 Define and analyze the deflection of an electron under the

influence different fields.
CO 2 Explain the characteristics of different semiconductor devices.

M1,M3,M7,M9

CO 3

M1,M3,M7,M9

Design and analyze different rectifiers and filters.

CO 4 Explain the characteristics of various transistors and small signal

amplifiers
Assessment / Evaluation Methods:
Assessment Tool
Descriptive1
Descriptive2
Quiz 1
Quiz 2
Final Examination

Weightage(Marks)
15
10
75

Prepared By: B.Surya Prasada Rao

Last Update:

Course Design Template version 1.0

M1,M3,M7,M9

M1,M3,M7,M9