10/4/2016

IndianInstituteofTechnologyJodhpur,Year2016

AnalogElectronics
(CourseCode:EE314)

Lecture1619:MOSFETs
CourseInstructor:ShreePrakash Tiwari
Email:sptiwari@iitj.ac.in

Office:3106, Phone:02912449096
Webpage:http://home.iitj.ac.in/~sptiwari/
Courserelateddocumentswillbeuploadedon
http://home.iitj.ac.in/~sptiwari/EE314/

Note:Theinformationprovidedintheslidesaretakenformtextbooksformicroelectronics
(includingSedra &Smith,B.Razavi),andvariousotherresourcesfrominternet,for
teaching/academicuseonly

PhysicsofMOSTransistors

Structure of MOSFET
StructureofMOSFET

OperationofMOSFET

MOSDeviceModels

PMOSTransistor

CMOSTechnology

ComparisonofBipolarandCMOSDevices

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TheMOSFET
GATE LENGTH, Lg

MetalOxideSemiconductorField
EffectTransistor:

OXIDE THICKNESS, Tox

Gate
Source

Drain

Substrate
M. Bohr, Intel Developer
Forum, September 2004

JUNCTION DEPTH, Xj

Nchannel&PchannelMOSFETs
operateinacomplementarymanner
CMOS=ComplementaryMOS

CURRENT

Currentflowingthroughthechannelbetweenthe
source anddrain
and drain iscontrolledbythegate
is controlled by the gate voltage.
voltage
VTH
|GATE VOLTAGE|

NChannelMOSFETStructure
Circuitsymbol

Theconventionalgatematerialisheavilydopedpolycrystalline
silicon (referred to as polysilicon
silicon(referredtoas
polysilicon or
or polySi
poly Si or
or poly)
poly )
Notethatthegateisusuallydopedthesametypeasthesource/drain,
i.e.thegateandthesubstrateareofoppositetypes.

TheconventionalgateinsulatormaterialisSiO2.
Tominimizecurrentflowbetweenthesubstrate(orbody)
andthesource/drainregions,theptypesubstrateisgrounded.

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Review:ChargeinaSemiconductor
Negativecharges:
Conductionelectrons(density=n)
Ionizedacceptoratoms(density=NA)

Positivecharges:
Holes(density=p)
Ionizeddonoratoms(density=ND)

Thenetchargedensity[C/cm3]inasemiconductoris

q p n N D N A
Notethatp,n,ND,andNA eachcanvarywithposition.
Themobilecarrierconcentrations(n andp)inthechannelof
aMOSFETcanbemodulatedbyanelectricfieldviaVG.

ChannelFormation(Qualitative)
Asthegatevoltage(VG)isincreased,holes
arerepelledawayfromthesubstratesurface.

VG <VTH

The
Thesurfaceisdepletedofmobilecarriers.The
surface is depleted of mobile carriers The
chargedensitywithinthedepletionregionis
determinedbythedopant iondensity.

AsVG increasesabovethethresholdvoltage
VTH, alayerofconductionelectronsformsat
thesubstratesurface.

VG VTH

ForV
F VG >V
> VTH,n >N
> NA atthesurface.
t th
f
Thesurfaceregionisinvertedtobentype.
Theelectroninversionlayer servesasaresistivepath(channel)forcurrenttoflow
betweentheheavilydoped(i.e.highlyconductive)source anddrain regions.

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VoltageDependentResistor
IntheONstate,theMOSFETchannelcanbeviewedasaresistor.

Sincethemobilechargedensitywithinthechanneldependson
thegatevoltage,thechannelresistanceisvoltagedependent.

ChannelLength&WidthDependence
Shorterchannellengthandwiderchannelwidtheachyield
lowerchannelresistance,hencelargerdraincurrent.
IncreasingW alsoincreasesthegatecapacitance,however,which
limitscircuitoperatingspeed(frequency).

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Comparison:BJTvs. MOSFET
InaBJT,current(IC)islimitedbydiffusion ofcarriersfromthe
emittertothecollector.
IC increasesexponentiallywithinputvoltage(V
p
y
p
g ( BE),
),becausethe
V /V
carrierconcentrationgradientinthebaseisproportionalto e BE T

InaMOSFET,current(ID)islimitedbydrift ofcarriersfromthe
sourcetothedrain.
ID increases~linearlywithinputvoltage(VG),becausethecarrier
concentrationinthechannelisproportionalto(VGVTH)
InordertounderstandhowMOSFETdesignparametersaffectMOSFET
performance,wefirstneedtounderstandhowaMOScapacitorworks...

MOSCapacitor
Ametaloxidesemiconductorstructurecanbeconsideredasa
parallelplatecapacitor,withthetopplatebeingthepositive
plate,thegateinsulatorbeingthedielectric,andtheptype
semiconductorsubstratebeingthenegativeplate.

Thenegativechargesinthesemiconductor(forVG >0)are
comprisedofconductionelectronsand/oracceptorions.
Inordertounderstandhowthepotentialandchargedistributions
withintheSidependonVG,weneedtobefamiliarwithelectrostatics...

10/4/2016

GaussLaw
E

isthenetchargedensity
isthedielectricpermittivity

Ifthemagnitudeofelectricfieldchanges,theremustbecharge!
If th
it d f l t i fi ld h
th
tb h
!
Inachargefreeregion,theelectricfieldmustbeconstant.
GaussLawequivalentlysaysthatifthereisanet electricfield
leavingaregion,theremustbepositivechargeinthatregion:

E dV

E dV E dS

dV

dV

E dS

Theintegraloftheelectricfieldover
aclosedsurfaceisproportionalto
thechargewithintheenclosed
volume

GaussLawin1D
E

dE

dx

dx

x
( x' )
E ( x) E ( x0 )
dx'

x
dE

Considerapulsechargedistribution:

( x)
0

qN A

E (x)

Xd

x
0

Xd

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ElectrostaticPotential
Theelectricfield(force)isrelatedtothepotential(energy):
dV
E
d
dx

d 2V ( x)
( x)

2
d
dx

Notethatanelectron(qcharge)driftsinthedirectionofincreasing
potential:

Fe qE q

(x)
0

dV
dx

E (x)
Xd

qN A

V (x)
x

Xd

x
0

Xd

BoundaryConditions
Electrostaticpotentialmustbeacontinuousfunction.
Otherwise,theelectricfield(force)wouldbeinfinite.
,
Electricfielddoesnothavetobecontinuous,however.
Consideraninterfacebetweentwomaterials:
x

E1

E2

( 1 )
( 2 )

E dS E S
1

E2 S Qinside

If Qinside x

0 0, then
S

1 E1S 2 E2 S 0

E1 2

E2 1
DiscontinuityinelectricdisplacementE chargedensityatinterface!

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MOSCapacitorElectrostatics
Gateelectrode:
SinceE(x)=0inametallicmaterial,V(x)isconstant.
Gateelectrode/gateinsulatorinterface:
Gateelectrode/gateinsulator interface:
Thegatechargeislocatedatthisinterface.
E(x)changestoanonzerovalueinsidethegateinsulator.
Gateinsulator:
Ideally,therearenochargeswithinthegateinsulator.
E(x)isconstant,andV(x)islinear.
Gateinsulator/semiconductorinterface:
Gate insulator/semiconductor interface:
SincethedielectricpermittivityofSiO2 islowerthanthatof
Si,E(x)islargerinthegateinsulatorthanintheSi.
Semiconductor:
If(x)isconstant(nonzero),thenV(x)isquadratic.

MOSCapacitor:VGB =0
Ifthegateandsubstratematerialsarenotthesame(typicallythe
case),thereisabuiltinpotential(~1Vacrossthegateinsulator).
Positivechargeislocatedatthegateinterface,andnegativechargeintheSi.
Positive charge is located at the gate interface, and negative charge in the Si.
Thesubstratesurfaceregionisdepletedofholes,downtoadepthXdo

(x)
Xdo

V (x
( )
VS,o

tox 0

Xdo

Qdep

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FlatbandVoltage,VFB
Thebuiltinpotentialcanbecancelledoutbyapplyingagate
voltagethatisequalinmagnitude(butoftheoppositepolarity)
asthebuiltinpotential.Thisgatevoltageiscalledtheflatband
voltagebecausetheresultingpotentialprofileisflat.
(x)
x
tox

V (x
( )

x
tox 0

Thereisnonetcharge(i.e. (x)=0)inthe
semiconductorunderforVGB =VFB.

VoltageDropsacrossaMOSCapacitor
VGB VFB Vox VS

V (x)

tox 0

Xd

Ifweknowthetotalchargewithinthesemiconductor(QS),
wecanfindtheelectricfieldwithinthegateinsulator(Eox)
andhencethevoltagedropacrossthegateinsulator(Vox):
QS
QS
QS

tox
V
E
t

dS

E
A

ox
ox
ox
ox

Cox
ox
A ox
whereQS isthearealchargedensityinthesemiconductor[C/cm2]
2]
Cox ox tox
andisthearealgatecapacitance[F/cm

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VGB<VFB (Accumulation)
IfagatevoltagemorenegativethanVFB isapplied,thenholes
willaccumulateatthegateinsulator/semiconductorinterface.
(x)
tox

x
0

V (x)
tox

Arealgatechargedensity[C/cm2]:

QG Cox VGB VFB

VFB <VGB <VTH (Depletion)

IftheappliedgatevoltageisgreaterthanVFB,thenthe
semiconductorsurfacewillbedepletedofholes.
If
IftheappliedgatevoltageislessthanV
the applied gate voltage is less than VTH,theconcentrationof
, the concentration of
conductionelectronsatthesurfaceissmallerthanNA (x) qNA(x)

(x)
Xd
tox

Arealdepletion

chargedensity[C/cm
density [C/cm2]:
]:
V (x
( ) charge

Qdep qN A X d

tox 0

Xd

VGB VFB Vox VS

Xd

Si

1
Cox

qN A X d qN A X d2

2 Si
Cox

2Cox2 VGB VFB

1
q Si N A

10

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VGB >VTH (Inversion)

IftheappliedgatevoltageisgreaterthanVTH,thenn >NA at
thesemiconductorsurface.

N
AtVGB =VTH,,thetotalpotentialdroppedintheSiis2
p
pp
B where B VT ln A
ni

(x)

Xd,max
tox

V (x)

tox 0

VTH VFB 2B

2q Si N A (2B )

Xd,max

Cox

MaximumDepletionDepth,Xd,max
AsVGB isincreasedaboveVTH,VS andhencethedepthofthe
depletionregion(Xd)increasesveryslowly.
This
Thisisbecausen
is because n increasesexponentiallywithV
increases exponentially with VS,whereasX
whereas Xd
increaseswiththesquarerootofVS.Thus,mostofthe
incrementalnegativechargeinthesemiconductorcomesfrom
additionalconductionelectronsratherthanadditionalionized
acceptoratoms,whenn exceedsNA.

Xd canbereasonablyapproximatedtoreachamaximum
value(X
( d,max
d max))forVGB VTH.
Qdep thusreachesamaximumofQdep,maxatVGB =VTH.

Ifweassumethatonlytheinversionlayerchargeincreases
withincreasingVGB aboveVTH,then

Qinv Cox VGB VTH and so QG (VGB ) Cox VGB VTH Qdep ,max

11

10/4/2016

QV CurveforMOSCapacitor
X d ,max

QG

2 Si (2B )
qN A

Qinv Cox VGB VTH

Qdep ,max

VGB V

VTH

VFB

Qdep ,max qN A X d ,max 2qN A Si (2B )

VGB =VTH (Threshold)

VTH isdefinedtobethegatevoltageatwhichtheinversionlayer
carrierconcentrationisequaltothechanneldopantconcentration.
ForanNMOSdevice,n
, =NA
( )
A atthesurface(x=0)whenV
GB =VTH:
Thesemiconductorpotentialis VT ln

Thepotentialinthebody(bulk)is VT ln N A B

(x)

Xd
tox

V (x)

p
n
VT ln
n
ni
i

n
i

AtVGB =VTH,thepotentialatthesurfaceis
n
N
VT ln VT ln A B
ni
ni
Thetotalpotentialdroppedinthesemiconductoris2B
Thedepletionwidthis X d 2 Si 2B
qN A

tox 0

Xd

VTH VFB 2B

2q Si N A (2B )
Cox

12

10/4/2016

EffectofChanneltoBodyBias
WhenaMOSdeviceisbiasedintheinversionregionofoperation,
aPNjunctionexistsbetweenthechannelandthebody.Sincethe
inversionlayerofaMOSFETiselectricallyconnectedtothe
source,avoltagecanbeappliedtothechannel.
Ifthesource/channelofanNMOSdevice
isbiasedatahigherpotential(VC)than
thebodypotential(VB),thechannelto
bodyPNjunctionisreversebiased.

VG VTH

Thepotentialdropacrossthedepletionregionisincreased.
p
p
p
g
Thedepletionwidthisincreased: X d

2 Si (2B VCB )
qN A

Thedepletionchargedensity(Qdep=qNAXd)isincreased.
Theinversionlayerchargedensityisdecreased,i.e.VTH isincreased.

SmallSignalCapacitance
TheMOScapacitorisanonlinearcapacitor: Q f (V ) CV
Ifanincremental(smallsignal)voltagedVG isappliedinaddition
toabiasvoltageV
b
l
h
l h
h
G,thetotalchargeonthegateis
QG f (VG dVG ) f (VG )
constantcharge

df (V )
dVG QGo dQG
dV V VG

Thus,theincrementalgatecharge(dQG)resultingfromthe
incremental gate voltage (dVG)is
incrementalgatevoltage(dV
) is
df (V )
dQG
dVG CG dVG
dV V VG
dQ
df (V )
CG isthesmallsignalgatecapacitance: CG G
dVG
dV V VG

13

10/4/2016

(N)MOSCV Curve
TheMOSCV curveisobtainedby
takingtheslopeoftheQVcurve.

CG =Cox intheaccumulationand
inversionregionsofoperation.
CGissmaller,andisanonlinear
i
ll
di
li
functionofVGB inthedepletion
regionofoperation.

MOSSmallSignalCapacitanceModel
Cox

ox

Accumulation

Depletion

tox

Inversion

Cox

Cox

Cox

Cdep
Cdep

Si
Xd

Theincremental
chargeislocatedat
thesemiconductor
surface

Theincremental
chargeislocatedat
thebottomedgeof
the depletion region
thedepletionregion

Cmin

Theincremental
chargeislocatedat
thesemiconductor
surface

Cox Cdep ,min

Cox Cdep ,min

where Cdep ,min

Si
X d ,max

14

10/4/2016

MOSCapacitiveVoltageDivider
Inthedepletion(subthreshold)regionofoperation,an
incrementalchangeinthegatevoltage(VGB)resultsinan
incrementalchangeinthechannelpotential(VCB)thatis
smallerthanVGB:
VG

Cox
VC

Cdep

QG

Cox Cdep
Cox Cdep

VCB

VGB Cdep VCB

Cox
VGB
Cox Cdep
d

VB

HowcanwemaximizeVCB/VGB ?

Whatnext
MOSFETcontd..

15

10/4/2016

SmallSignalCapacitance
TheMOScapacitorisanonlinearcapacitor: Q f (V ) CV
Ifanincremental(smallsignal)voltagedVG isappliedinaddition
toabiasvoltageV
b
l
h
l h
h
G,thetotalchargeonthegateis
df (V )
QG f (VG dVG ) f (VG )
dVG QGo dQG
dV V VG
constantcharge

Thus,theincrementalgatecharge(dQG)resultingfromthe
incremental gate voltage (dVG)is
incrementalgatevoltage(dV
) is
df (V )
dQG
dVG CG dVG
dV V VG
dQ
df (V )
CG isthesmallsignalgatecapacitance: CG G
dVG
dV V VG

(N)MOSCV Curve
TheMOSCV curveisobtainedby
takingtheslopeoftheQVcurve.

CG =Cox intheaccumulationand
inversionregionsofoperation.
CGissmaller,andisanonlinear
i
ll
di
li
functionofVGB inthedepletion
regionofoperation.

16

10/4/2016

MOSSmallSignalCapacitanceModel
Cox

Depletion

Accumulation

ox
tox

Inversion

Cox

Cox

Cox

Cdep
Cdep

Si

Theincremental
chargeislocatedat
thesemiconductor
surface

Xd

Theincremental
chargeislocatedat
thebottomedgeof
the depletion region
thedepletionregion

Cmin

Theincremental
chargeislocatedat
thesemiconductor
surface

Cox Cdep ,min

Cox Cdep ,min

where Cdep ,min

Si
X d ,max

MOSCapacitiveVoltageDivider
Inthedepletion(subthreshold)regionofoperation,an
incrementalchangeinthegatevoltage(VGB)resultsinan
incrementalchangeinthechannelpotential(V
incremental
change in the channel potential ( VCB))thatis
that is
smallerthanVGB:
VG

Cox
VC

Cdep

QG

Cox Cdep
Cox Cdep

VCB

VGB Cdep VCB

Cox
VGB
Cox Cdep
d

VB

HowcanwemaximizeVCB/VGB ?

17

10/4/2016

PMOSCapacitor
ThePMOSstructurecanalsobeconsideredasaparallelplate
capacitor,butwiththetopplatebeingthenegativeplate,the
gateinsulatorbeingthedielectric,andthentypesemiconductor
substratebeingthepositiveplate.
b
b i
h
ii
l
Thepositivechargesinthesemiconductor(forVGB<VFB)arecomprisedof
holesand/ordonorions.
Inversion
VGB <VTH

Depletion
VTH <VGB <VFB

(x)

Accumulation
VGB >VFB

(x)

(x)

tox

tox

Xd,max

Xd

VTH VFB 2B

tox

2q Si N D ( 2 B )
Cox

ND

ni

B VT ln

PMOSQV ,CV
X d ,max

2 Si ( 2B )

depletion

inversion

accumulation

QG

qN D

Qdep ,max 2qN D Si ( 2B )

VTH

VGB V

Qdep ,max

Qinv Cox VGB VTH

VFB
CG

VTH

VFB

VGB V

18

10/4/2016

MOSFETinONState(VGS >VTH)

Thechannelchargedensityisequaltothegatecapacitance
timesthegatevoltageinexcessofthethresholdvoltage.
Arealinversion
chargedensity[C/cm2]:

Qinv Cox (VGS VTH )

Notethatthereferencevoltageisthesourcevoltage.
Inthiscase,VTH isdefinedasthevalueofVGS atwhichthechannel
surfaceisstronglyinverted(i.e.n =NA atx=0,foranNMOSFET).

MOSFETasVoltageControlledResistor
ForsmallVDS,theMOSFET
canbeviewedasaresistor,
withthechannelresistance
dependingonthegate
voltage.

RON resistivity

1
L
L

tinv W q n ninv tinv W

qninv tinv Qinv Cox VGS VTH

Notethat
RON

1
W
nCox VGS VTH
L

19

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MOSFETChannelPotentialVariation
Ifthedrainisbiasedatahigherpotentialthanthesource,the
channelpotentialincreasesfromthesourcetothedrain.
Thepotentialdifferencebetweenthegateandchannel
p
g
decreasesfromthesourcetodrain.

ChargeDensityalongtheChannel
Thechannelpotentialvarieswithpositionalongthechannel:

Qinv ( y) Cox VGS VTH VC ( y)

Thecurrentflowinginthechannelis
Th
t fl i i th h
l i I D WQinv ( y) v( y)
Thecarrierdriftvelocityatpositiony is v( y) n E n
wheren istheelectronfieldeffectmobility

dVC ( y)
dy

20

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DrainCurrent,ID (forVDS<VGSVTH)
ID WQinv( y) v( y) WQinv( y) n

dVC ( y)
dy

Integratingfromsourcetodrain:

VD

I Ddy WnQinv (VC )dVC

VS

VD
1 2

I D L Wn Cox VGS VTH VC dVC WnCox VGS VTH VDS VDS

VS
2

I D nCox

W
VDS
(
V

V
)

VDS
GS
TH
L
2

IDVDSCharacteristic
ForafixedvalueofVGS,ID isaparabolicfunctionofVDS.
ID reachesamaximumvalueatVDS =VGS VTH.
I D nCox

V
W
(VGS VTH ) DS VDS

2
L

21

10/4/2016

InversionLayerPinchOff(VDS>VGSVTH)
WhenVDS =VGSVTH,Qinv =0atthedrainendofthechannel.
Thechannelispinchedoff.

AsVDS increasesaboveVGSVTH,thepinchoffpoint(where
Qinv =0)movestowardthesource.
NotethatthechannelpotentialVC isalwaysequaltoVGSVTH atthe
pinchoffpoint.
i h ff i t
Themaximumvoltagethatcanbeapplied
acrosstheinversionlayerchannel(from
sourcetodrain)isVGSVTH.
Thedraincurrentsaturatesata
maximumvalue.

CurrentFlowinPinchOffRegion
Undertheinfluenceofthe
lateralelectricfield,carriers
drift from the source
driftfromthesource
(throughtheinversionlayer
channel)towardthedrain.
Alargelateralelectricfield
existsinthepinchoffregion:
V VGS VTH
E DS
L L1
Oncecarriersreachthe
pinchoffpoint,theyare
sweptintothedrainbythe
electricfield.

22

10/4/2016

DrainCurrentSaturation
(LongChannelMOSFET)
1
2

ForVDS >VGSVTH: I D I D , sat nCox

W
VGS VTH 2
L

VD , sat VGS VTH

MOSFETRegionsofOperation
Whenthepotential
differencebetween
thegateanddrainis
g
greaterthanVTH,the
MOSFETisoperating
inthetrioderegion.

Whenthepotential
differencebetweenthe
ggateanddrainisequal
q
toorlessthanVTH,the
MOSFETisoperatingin
thesaturationregion.

23

10/4/2016

TriodeorSaturation?
InDCcircuitanalysis,whentheMOSFETregionofoperationis
notknown,anintelligentguessshouldbemade;thenthe
g
g
p
resultinganswershouldbecheckedagainsttheassumption.
Example:GivennCox =100A/V2,VTH =0.4V.
IfVG increasesby10mV,whatisthechangeinVD?

TheBodyEffect

VTH isincreasedbyreversebiasingthebodysourcePNjunction:
VTH VFB 2B
VFB 2B
VTH 0

2qN A Si (2B VSB )

Cox

2qN A Si (2B )
2qN A Si (2B )
2qN A Si (2B VSB )

Cox
Cox
Cox

2qN A Si
Cox

2B VSB 2B VTH 0

2B VSB 2B

isthebodyeffectparameter.

24

10/4/2016

ChannelLengthModulation
ThepinchoffpointmovestowardthesourceasVDS increases.

ThelengthoftheinversionlayerchannelbecomesshorterwithincreasingVDS.
ID increases(slightly)withincreasingVDS inthesaturationregionofoperation.
L VDS VDSsat

I Dsat

1
1 L
1

L L L
L

1
W
nCox VGS VTH 2 1 VDS VD ,sat
2
L
isthechannellengthmodulationcoefficient.

I D , sat

andL
Theeffectofchannellengthmodulationislessforalong
channelMOSFETthanforashortchannelMOSFET.

25

10/4/2016

VelocitySaturation
InstateoftheartMOSFETs,thechannelisveryshort(<0.1m);
hencethelateralelectricfieldisveryhighandcarrierdrift
velocitiescanreachtheirsaturationlevels.
TheelectricfieldmagnitudeatwhichthecarriervelocitysaturatesisEsat.

v
vsat

8 106 cm/s for electrons in Si

6
6 10 cm/s for holes in Si

ImpactofVelocitySaturation
Recallthat I D WQinv ( y )v( y )
IfVDS >EsatL,thecarriervelocitywillsaturateandhencethe
draincurrentwillsaturate:

I D,sat WQinv vsat WCox VGS VTH vsat

ID,sat isproportionalto VGSVTH ratherthan (VGS VTH)2
ID,sat isnotdependentonL
is not dependent on L
ID,sat isdependentonW

26

10/4/2016

ShortChannelMOSFETIDVDS

P. Bai et al. (Intel Corp.),

Intl Electron Devices Meeting, 2004.

ID,sat isproportionaltoVGSVTH ratherthan(VGSVTH)2

VD,sat issmallerthanVGSVTH
Channellengthmodulationisapparent(?)

DrainInducedBarrierLowering(DIBL)
InashortchannelMOSFET,thesource&drainregionseachsupport
asignificantfractionofthetotalchanneldepletionchargeQdepWL
VTH islowerthanforalongchannelMOSFET
g
Asthedrainvoltageincreases,thereversebiasonthebodydrainPN
junctionincreases,andhencethedraindepletionregionwidens.
VTH decreaseswithincreasingdrainbias.
(Thebarriertocarrierdiffusionfromthesourceintothechannelisreduced.)

ID increaseswithincreasingdrainbias.
g

27

10/4/2016

NMOSFETinOFFState
Wehadpreviouslyassumedthatthereisnochannelcurrent
whenVGS <VTH.Thisisincorrect!
AsV
As VGS isreduced(toward0V)belowV
is reduced (toward 0 V) below VTH,thepotentialbarrierto
the potential barrier to
carrierdiffusionfromthesourceintothechannelisincreased.
ID becomeslimitedbycarrierdiffusionintothechannel,rather
thanbycarrierdriftthroughthechannel.
(ThisissimilartothecaseofaPNjunctiondiode!)

ID variesexponentiallywiththepotentialbarrierheightatthe
source which varies directly with the channel potential
source,whichvariesdirectlywiththechannelpotential.

SubThresholdLeakageCurrent
Recallthat,inthedepletion(subthreshold)regionofoperation,
thechannelpotentialiscapacitively coupledtothegatepotential.
Achangeingatevoltage(
A
change in gate voltage (VGS))resultsinachangeinchannel
results in a change in channel
voltage(VCS):
Cox

VGS / m
VCS VGS
C C
dep
ox

Therefore,thesubthresholdcurrent(ID,subth)decreases
exponentiallywithlinearlydecreasingVGS/m
ID

log(ID)

Subthresholdswing:
1

VGS

VGS

d (log10 I DS )

S
dVGS

S mVT ln (10) 60mV/dec

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ShortChannelMOSFETIDVGS

P. Bai et al. (Intel Corp.),

Intl Electron Devices Meeting,
g, 2004.

VTH DesignTradeOff
LowVTH isdesirableforhighONstatecurrent:
ID,sat (VDD VTH)

1< <2

ButhighVTH isneededforlowOFFstatecurrent:
logID

Low VTH
High VTH

IOFF,low VTH

VTH cannotbereduced
aggressively.

IOFF,high VTH
0

VGS

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Whatnext
MOSFETBiasingandAmplifiers

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