National Institute of Technology, Kurukshetra

Theory Examination-November 201 1

Programme:

B.Tech.(ECE)

Semester-lll

Code and name of the course: ECT-201 Semiconductor Devices and Applications

Time Allowed: Tlrree

O.No.
I

(a)
(b)
(c)

hours

Attempt five questions in all selectins at least one question

Max. Marks: 50
from each of the four units. Marks

UNIT-I

| What are intrinsic and extrinsic semiconductors? Explain with examples.

| Analyze the effect of temperature on energy gap and mobility in silicon and
I germanium.
| Determine the concentration of holes and electrons in p-type germanium at 300"K,

2(a)
(b)

3
3

if

I the conductivity is 100 (O-cm)-r.

| Show the variation of minority and majority currents with distance in a p-n diode and

I explain those.
| Derive the expression for contact difference of potential in an open circuited step grade
I

I P-n lunctton'

3(a)
(b)
a(a)
(b)
5(a)
(b)

IDraw the v-i characteristic curvesrrNrT-rr

for

a p-n junction diode with proper scale and labels

|
and
explain
those.
I
I n p-n germanium junction diode at room temperature has a reverse saturation current of
I f O pn with negligible ohmic resistance and zener breakdown voltage of 100 V. A one
| rc-ohrn resistor is in series with this diode and a 30 volt battery is connected across this
I combination. Determine the current if the diode is forward biased.
| A zener regulator has an input voltage from 1 5-20 V and a load current from 5 to 20
I rnA. If the zener voltage is 6.8 V, what value should the series resistor have?
| Wltn the help of proper circuit diagram and waveforms explain the operating principle
I of full wave bridge rectifier.
UNIT-III
I
of a BJT in common collector configuration and
Draw
the
electrical
circuit
diagrarn
|

I explain its operating principle.

| Show that the emitter volt-ampere characteristics of a transistor in the active region is
I given by

II r-

r E/ v t/
- ^-^1\/-/\/-\
Is : - Ieel(1-crpo1) and symbols used carry usual meanings.

r'1. - r\ v^P\

6(a)
(b)
1(a)
(b)

8(a)

(b)

I where

| Dra* the circuit diagram

and frequency response of an RC coupled amplifier and

I explain it.
| Explain the working of BJT as a switch in detail. What factor(s) determine(s) its
I switching tirne?

LrNrr-rv

| Oru* the low frequency srnall signal FET model. Also derive the relationship among
I amplification factor, drain resistance and transconductance for FET.
| Sno* that the transconductance g* ofa JFET is related to the drain current lps by the
following relationship:
g* : {(2i lVpi} {lorrlor} "'
Symbols used carry usual meanings.
Give the constructional details of a p-channel enhancement type MOSFET and explain
its operating principle.
With the help of proper circuit diagram, explain the operation of a CMOS switch. Also
mention its salient features.