MCC162-16io1

Thyristor Module

VRRM

= 2x 1600 V

I TAV

181 A

VT

1.03 V

Phase leg

Part number

MCC162-16io1

Backside: isolated

Features / Advantages:

Applications:

Package: Y4

Thyristor for line frequency

Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic

Line rectifying 50/60 Hz

Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control

Isolation Voltage: 3600 V~

Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling

Terms Conditions of usage:

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC162-16io1
Ratings

Thyristor
Conditions

Symbol
VRSM/DSM

Definition

max. non-repetitive reverse/forward blocking voltage

TVJ = 25C

VRRM/DRM

max. repetitive reverse/forward blocking voltage

TVJ = 25C

1600

I R/D

reverse current, drain current

VT

forward voltage drop

min.

typ.

VR/D = 1600 V

TVJ = 25C

300

TVJ = 125C

10

mA

I T = 150 A

TVJ = 25C

1.09

1.25

1.03

TVJ = 125 C

I T = 150 A
I T = 300 A
I TAV

average forward current

TC = 85 C

I T(RMS)

RMS forward current

180 sine

VT0

threshold voltage

rT

slope resistance

R thJC

thermal resistance junction to case

for power loss calculation only

RthCH

thermal resistance case to heatsink

total power dissipation

I TSM

max. forward surge current

It

value for fusing

VR/D = 1600 V
I T = 300 A

Ptot

max. Unit
1700
V

1.25

T VJ = 125 C

181

300

TVJ = 125 C

0.88

1.15

0.155 K/W
0.07

K/W

TC = 25C

645

t = 10 ms; (50 Hz), sine

TVJ = 45C

6.00

kA

t = 8,3 ms; (60 Hz), sine

VR = 0 V

6.48

kA

t = 10 ms; (50 Hz), sine

TVJ = 125 C

5.10

kA

t = 8,3 ms; (60 Hz), sine

VR = 0 V

5.51

kA

t = 10 ms; (50 Hz), sine

TVJ = 45C

180.0 kAs

t = 8,3 ms; (60 Hz), sine

VR = 0 V

174.7 kAs

t = 10 ms; (50 Hz), sine

TVJ = 125 C

130.1 kAs

t = 8,3 ms; (60 Hz), sine

VR = 0 V

CJ

junction capacitance

VR = 400 V f = 1 MHz

TVJ = 25C

PGM

max. gate power dissipation

t P = 30 s

T C = 125 C

126.3 kAs
273

t P = 500 s

pF
120

60

PGAV

average gate power dissipation

(di/dt) cr

critical rate of rise of current

TVJ = 125 C; f = 50 Hz
repetitive, IT = 540 A
t P = 200 s; di G /dt = 0.5 A/s;

(dv/dt)cr

critical rate of rise of voltage

V = VDRM

VGT

gate trigger voltage

VD = 6 V

TVJ = 25 C
TVJ = -40 C

2.6

I GT

gate trigger current

VD = 6 V

TVJ = 25 C

150

mA

TVJ = -40 C

200

mA

VGD

gate non-trigger voltage

TVJ = 125C

0.2

I GD

gate non-trigger current

10

mA

IL

latching current

TVJ = 25 C

300

mA

IG =

0.5 A; V = VDRM

150 A/s

non-repet., I T = 180 A

500 A/s
1000 V/s

TVJ = 125C

R GK = ; method 1 (linear voltage rise)

VD = VDRM
tp =

30 s

IG =

0.5 A; di G /dt =

2.5

0.5 A/s

IH

holding current

VD = 6 V R GK =

TVJ = 25 C

200

mA

t gd

gate controlled delay time

VD = VDRM

TVJ = 25 C

tq

turn-off time

IG =

0.5 A; di G /dt =

0.5 A/s

VR = 100 V; I T = 300 A; V = VDRM TVJ =100 C

di/dt = 10 A/s dv/dt =

IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

150

20 V/s t p = 200 s

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC162-16io1
Package

Ratings

Y4

Symbol
I RMS

Definition

Conditions

RMS current

per terminal

min.

TVJ

virtual junction temperature

T op

operation temperature

Tstg

storage temperature

-40

typ.

max.
300

Unit
A

-40

125

-40

100

125

150

Weight
MD

mounting torque

MT

terminal torque

d Spp/App

creepage distance on surface | striking distance through air

d Spb/Apb
VISOL

terminal to terminal

14.0

terminal to backside

16.0

t = 1 second

isolation voltage

t = 1 minute

50/60 Hz, RMS; IISOL 1 mA

2.25

2.75

Nm

4.5

5.5

Nm

10.0

mm

16.0

mm

3600

3000

Circuit
Date Code +
Prod. Index

yywwAA

Part Number
Lot.No: xxxxxx
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)

Ordering
Standard

Ordering Number
MCC162-16io1

Equivalent Circuits for Simulation

I

V0

R0

Marking on Product
MCC162-16io1

* on die level

Delivery Mode
Box

Code No.
429619

T VJ = 125 C

Thyristor

V 0 max

threshold voltage

0.88

R0 max

slope resistance *

0.8

IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

Quantity
6

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC162-16io1
Outlines Y4

M6

2.8 / 0.8

Dim.

MIN
[mm]

MIN
[mm]

MIN
[inch]

MIN
[inch]

30.0

30.6

1.181

1.205

h
i

3 C

A (3:1)

64.0

65.0

2.520

2.559

6.5

7.0

0.256

0.275

4.9

5.1

0.193

0.201

28.6

29.2

1.126

1.150

7.3

7.7

0.287

0.303

93.5

94.5

3.681

3.720

79.5

80.5

3.130

3.169

4.8

5.2

0.189

0.205

33.4

34.0

1.315

1.339

B-B (1:1)

16.7

17.3

0.657

0.681

22.7

23.3

0.894

0.917

22.7

23.3

0.894

0.917

14.0

15.0

0.551

0.591

B
n

typ. 0.010

10

11

typ. 0.25

typ. 10.5

typ. 0.413

22.8

23.3

0.898

0.917

1.8

2.4

0.071

0.041

C-C (1:1)

b
e

DCB
n

IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC162-16io1
Thyristor
106

5000

320

4000

ITSM

DC
180 sin
120
60
30

280

50 Hz
80% VRRM
TVJ = 45C
TVJ = 125C

240

I2dt

3000

[A]

105
2000

ITAVM

TVJ = 45C

160

[A]

TVJ = 125C

[A2s]

200

120
80

1000

40
104

0
0.001

0.01

0.1

0
1

10

75 100 125 150

Fig. 2 I t versus time (1-10 ms)

Fig. 3 Max. forward current

at case temperature

400

100
RthKA K/W

360

tp = 30 s
tp = 500 s

0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8

320
280

Ptot 240

PGM = 120 W
60 W
10 P = 8 W
GAV

VG

DC
180 sin
120
60
30

160

1
125C

120

[V]

80
40
0
0

50

100 150 200 250

25

50

ITAVM [A]

75

100

125

0.1
0.01

150

Ta [C]

IGT (TVJ = -40C)

IGT (TVJ = 0C)
IGT (TVJ = 25C)

25C

200

[W]

50

TC [C]

Fig. 1 Surge overload current ITSM,

IFSM: Crest value, t: duration

25

t [ms]

t [s]

IGD

0.1

10

IG [A]

Fig. 4 Power dissipation vs. on-state current & ambient temperature

(per thyristor or diode)

Fig. 5 Gate trigger characteristics

100
1400

0.03
0.04
0.06
0.08
0.1
0.15
0.2
0.3

1200
Circuit
B6
3xMCC162 or

1000

Ptot
[W]

TVJ = 25C

RthKA K/W

3x MCD162

800

10

tgd
[s]

600

limit

typ.

400
200
0
0

100

200

300

400

500 0

25

IdAVM [A]

50

75

100

125

T a [C]

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct

output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

150

0.1
0.01

0.1

10

IG [A]
Fig. 7 Gate trigger delay time

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b

MCC162-16io1
Thyristor
1600

1200

Ptot

RthKA K/W

Circuit
W3
3xMCC162 or
3xMCD162

0.03
0.04
0.06
0.08
0.1
0.15
0.2
0.3

800

[W]
400

0
0

100

200

300

400

25

50

IRMS [A]

75

100

125

150

Ta [C]

Fig. 8 Three phase AC-controller: Power dissipation versus

RMS output current and ambient temperature

0.24
RthJC for various conduction angles d:

d
RthJC [K/W]
DC
0.155
180
0.167
120
0.176
60
0.197
30
0.227

0.16

ZthJC

30
60
120
180
DC

[K/W]
0.08

0.00
10-3

10-2

10-1

100

Constants for ZthJC calculation:

101

102

i Rthi [K/W]
1 0.0072
2 0.0188
3 0.1290

ti [s]
0.001
0.080
0.200

t [s]
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)

0.3

RthJK for various conduction angles d:

d
RthJK [K/W]
DC
0.225
180
0.237
120
0.246
60
0.267
30
0.297

0.2
30
60
120
180
DC

ZthJK
[K/W] 0.1

0.0
10-3

Constants for ZthJK calculation:

i Rthi [K/W]
1 0.0072
2 0.0188
3 0.1290
4 0.0700

10-2

10-1

100

101

ti [s]
0.001
0.080
0.200
1.000

102

t [s]
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)
IXYS reserves the right to change limits, conditions and dimensions.

2016 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20160408b