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Somayyeh Koohi
Department of Computer Engineering
Sharif University of Technology
Adapted with modifications from lecture notes prepared by
author
Topics
Wire and via structures
Wire parasitics
Capacitance
Resistance
Transistor parasitics
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vias
metal 1
poly
n+
p-tub
poly
n+
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Metal Layers
M1thin : narrowest
High density cells
M2-M4
For longer wires
M5-M6: thickest
For VDD, GND, clk
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Metal migration
Current-carrying capacity of metal wire
depends on cross-section
Height is fixed (according to metal layer)
Width determines current limit
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Topics
Wire and via structures
Wire parasitics
Capacitance
Resistance
Transistor parasitics
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sidewall
capacitances
p
depletion region
n+ (ND)
substrate (NA)
Sharif University of Technology
bottomwall
capacitance
Modern VLSI Design: Chap2
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p-type
bottomwall: 0.9 fF/m2
sidewall: 0.3 fF/m
= 0.25 m
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si/xd
Vbi
Xd0
Cj0
Cj
Modern VLSI Design: Chap2
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metal 1
plate: 0.04 fF/m2
fringe: 0.09 fF/m
metal 2
plate: 0.02 fF/m2
fringe: 0.06 fF/m
metal 3
plate: 0.009 fF/m2
fringe: 0.02 fF/m
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metal 1
metal 2
metal 1
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metal
plate=0.15
l t 0 15 fF
fringe=0.72 fF
3 m
0.75 m
1 m
1.5 m
2.5 m
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Wire resistance
Resistance of any size square is constant
Compute sheet resistance (Rsquare)
Rtotal = Rsquare
* (# of square)
q
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ndiff: 2 ohms/square
pdiff: 2 ohms/square
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Calculating resistance
Determine current flow, then aspect ratio
20
I
2
vs.
20
2
Sharif University of Technology
I
Modern VLSI Design: Chap2
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1/2 square
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Via resistance
Determined by current flow through via cut
Typical metal1-poly contact: 2.5 ohms
Typical metal1-metal2 contact: 0.5 ohms
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Topics
Wire and via structures
Wire parasitics
Capacitance
Resistance
Transistor parasitics
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Skin effect
At low frequencies : most of copper
conductors cross section carries current
As frequency increases : current moves to skin
of conductor
Back EMF induces counter-current in body of
conductor
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Low frequency
Low frequency
High frequency
High frequency
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Skin depth
Skin depth is depth at which conductors
current is reduced to 1/3 = 37% of surface
value
= 1/sqrt( f )
f = signal frequency
= magnetic permeability
= wire conducitvity
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Effect on resistance
Low frequency resistance of wire
Rdc = 1/ ( wt)
W & h : width & height of the semiconductor
(w + t))
Typically
Rhf 2)
= 1.2
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gate
t
source
drain
overlap
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