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NATIONAL INSTITUTE OF TECHNOLOGY. KTIRUKSHETRA

THEORY EXAMINATION
Roll No...........,
Question Paper
Month and Year of I-xamination : ![4]4949291J
Progranime:
Semester:6th
Subject: Micro\Yave En gineering
Course No: ECT-302
Maximum Marks: 50
Number ofQuestions to be Attempted: Five
Time Allowed: 3 Hrs.
Total No. ofQuestions:
Totai No. ofPages Used: 2
Unless stated othenise, the Symbols have their usual meanings in contexl with the
Subject.Assume suitably and state, additional data rcquircd, ifany.
Thc Candidates, before starting to \\dte the solutions, should please check the
Question Paper for any discrepancy, and also ensure that they have been delivered the
question paper ofright couse no. and right subiect title.
ote:
an alL Allempt at leqst one queslion ltot t

B.Tech

it

I]NIT-I
A two cavity klystron amplifier has the following parameters:
Beam voltage: Vo:900V, Beam curent: Io:30mA, Frequency: f=8GHz
Gap spacing in either cavity: d:1mm, Spacing between center of caviti
L:4cm, Effective shunt impedance: R.1:40k0
Deterrnine: a) The electon velocity b) The dc electon tansit time c)
input voltage lbr maximum output voltage d) The voltage gain in decibel
e) Calculate rhe efficiency ofthe amplifier
Derive the equations of round trip transit time in the .epellet region of
reflex klystron

Descdbe the structure

of an

O-type aavelling wave tube and its

charactedstics, then explain how it works. What advantage do gddded high
power tubes have?
An X-band pulsed cylindrical magnetron has the following pa.rameter:
Anode voltage: V6:32kV, Anode cuffent: Io=84A, Magnetic ilux density:
Bo=0.01Wt/mz, Radius of cathode cylinder: a=6cm. Radius of vane ed;e tc
center: b=12 cm
Compute: a) The cycloton angular frequency b) The cut off voltage for a
fixed Bo c) The cutoffmagnetic flux density for a fixed V"

UMT-II
Describe

fte operating principles of GLrNN diodes.

Ar IMPATT

diode the followirg parameter:

Carrier drift velocity: v6=2x107, D.if1 region leogth: L=6Fm, Ma,\imum
operating voltage: Vo.*=l00V, Maximum operating current: Ionar:2o0mA,
Ellciency: 1=15%, Breakdown voltage:Vbd=90V
Compute: a) The maximum CW output power io watts b) The resonant
ftequency in GHz.

4a.

b.

What is a cavity resonalor? Describe any one such rc.orralor. F.xplain \ hal i
Q factor ofa cavity resonator?
An M-Si-M BARITT diode has the folio*'ing parameters:
Relative dielectdc constant of silicoll: e. = I 1.8 , Donor Concentration:
N=2.8'1O'?r ln'r, Silicon lengt!: L-6pm
Determinc: a) The breakdown voltage b) The breatr<do*ar electric ireld.

UNIT-III
5a.
b.

differ from H, Y, Z and ABCD

parameten?
Explain the propeties of S- parameters for different characteristics
the microwave network.

W]1at are S- pammcters, how they

of

Write the S-matrices for the following devices and give their applications
i) Magic
ii) Hybrid ring
iii)
iv) Directional Coupler

Tee
Circulator

IINIT-f\
Write short notes on the following

i)
ii)

Isolator

8a.

ii) Phase shifter

Microwave hlters
Calculate the SWR of a tansmission line system operating at I 0 GHz.
Assume TElo wave tansmission inside a waveguide ofdimensions
a= 4cm, b:2.5cm. The distance measued betweerl twice minimum power
points:1rnm on a slotted line.
How a-re microwave measuements different fiom low frequency

b.

measurements?
Discuss tre slohed Iine method ofmeasuring

i)
ii)

iii)

Impedance
Imertion loss
Frequency

THE END