BUZ41A

Semiconductor

Data Sheet

4.5A, 500V, 1.500 Ohm, N-Channel Power

MOSFET

October 1998

File Number 2256.1

Features
4.5A, 500V

[ /Title
This is an N-Channel enhancement mode silicon gate power
rDS(ON) = 1.500
(BUZ41 field effect transistor designed for applications such as
SOA is Power Dissipation Limited
A)
switching regulators, switching converters, motor drivers,
/Sub Nanosecond Switching Speeds
relay drivers and drivers for high power bipolar switching
transistors
requiring
high
speed
and
low
gate
drive
power.
ject
Linear Transfer Characteristics
(4.5A, This type can be operated directly from integrated circuits.
High Input Impedance
500V,
Formerly developmental type TA17415.
Majority Carrier Device
1.500
Ordering Information
Related Literature
Ohm,
- TB334 Guidelines for Soldering Surface Mount
PACKAGE
BRAND
N-Chan- PART NUMBER
Components to PC Boards
BUZ41A
TO-220AB
BUZ41A
nel
Power NOTE: When ordering, use the entire part number.
Symbol
MOSD
FET)
/Author
G
()
/KeyS
words
(Harris
Semiconduc- Packaging
tor, NJEDEC TO-220AB
ChanSOURCE
nel
DRAIN
Power
GATE
MOSDRAIN (FLANGE)
FET,
TO220AB)
/Creator ()
/DOCIN
FO pdfmark

[ /PageMode
/Use-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright Harris Corporation 1998

BUZ41A
TC = 25oC, Unless Otherwise Specified

Absolute Maximum Ratings

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current TC = 35oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

BUZ20
500
500
4.5
18
20
75
0.6
-55 to 150
E
55/150/56

UNITS
V
V
A
A
V
W
W/oC
oC

300
260

oC
oC

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.
TC = 25oC, Unless Otherwise Specified

Electrical Specifications
PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250A, VGS = 0V

500

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 1mA (Figure 9)

2.1

TJ = 25oC, VDS = 500V, VGS = 0V

20

250

TJ = 125oC, VDS = 500V, VGS = 0V

100

1000

VDS = 0V, VGS = 20V

10

100

nA

rDS(ON)

ID = 2.5A, VGS = 10V (Figure 8)

1.4

1.5

gfs

VDS = 25V, ID = 2.5A (Figure 11)

1.5

2.5

30

45

ns

40

60

ns

td(OFF)

110

140

ns

tf

50

65

ns

1500

2000

pF

Zero Gate Voltage Drain Current

IDSS

Gate to Source Leakage Current

IGSS

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)
Turn-On Delay Time

td(ON)

Rise Time

tr

Turn-Off Delay Time

Fall Time

VCC = 30V, ID 2.6A, VGS = 10V, RGS = 50, RL

= 10. (Figures 14, 15)

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)

Output Capacitance

COSS

110

170

pF

Reverse Transfer Capacitance

CRSS

40

70

pF

Thermal Resistance Junction to Case

RJC

1.67

oC/W

Thermal Resistance Junction to Ambient

RJA

75

oC/W

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ISD

TC = 25oC

4.5

Pulsed Source to Drain Current

ISDM

TC = 25oC

18

Source to Drain Diode Voltage

VSD

TJ = 25oC, ISD = 9A, VGS = 0V

1.1

1.5

TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/s,

VR = 100V

1200

ns

Continuous Source to Drain Current

Reverse Recovery Time

trr

Reverse Recovery Charge

QRR

NOTES:
2. Pulse Test: Pulse width 300s, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

BUZ41A
Unless Otherwise Specified

1.2

1.0

5
ID, DRAIN CURRENT (A)

POWER DISSIPATION MULTIPLIER

Typical Performance Curves

0.8

0.6
0.4

0.2

4
3

2
1

.0
0

25

50
75
100
TC , CASE TEMPERATURE (oC)

125

150

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

ZJC, TRANSIENT THERMAL IMPEDANCE

VGS 10V

50
100
TC, CASE TEMPERATURE (oC)

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5
0.2
0.1

0.1

PDM

0.05
0.02
0.01

t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC + TC

SINGLE PULSE

0.01
10-5

10-4

10-3

10-2
10-1
t, RECTANGULAR PULSE DURATION (s)

100

101

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

102

10

1s
101
10s
100s
100

10-1
100

PD = 75W

OPERATION IN THIS
AREA MAY BE LIMITED
BY rDS(ON)

101

1ms
10ms
100ms
DC
102

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

103

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

TJ = MAX RATED
TC = 25oC

7.0V

8.0V
10V
20V

7.5V

PULSE DURATION = 80s

TJ = 25oC
VGS = 6.5V

7
6

VGS = 6.0V

5
VGS = 5.5V

4
3

VGS = 5.0V

VGS = 4.5V

1
0

VGS = 4.0V
0

10

20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 5. OUTPUT CHARACTERISTICS

60

BUZ41A
Unless Otherwise Specified (Continued)

6
PULSE DURATION = 80s
VDS = 25V
TJ = 25oC

rDS(ON), ON-STATE RESISTANCE ()

IDS(ON), DRAIN TO SOURCE CURRENT (A)

Typical Performance Curves

5
4
3
2
1
0

5
VGS, GATE TO SOURCE VOLTAGE (V)

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE ()

PULSE DURATION = 80s

ID = 2.5A
VGS = 10V

-50

50

100

VGS = 5V

150

3
7V
2

7.5V
8V
9V

10V
20V
0

gfs, TRANSCONDUCTANCE (S)

C, CAPACITANCE (nF)

VGS = 0V, f = 1MHz

CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
COSS
CRSS

10
20
30
VDS, DRAIN TO SOURCE VOLTAGE (V)

40

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

10

VDS = VGS, ID = 1mA

-50

50

100

150

FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION

TEMPERATURE

CISS

10-2

4
6
ID, DRAIN CURRENT (A)

VGS = 0, f = 1MHz

10-1

6.5V

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs

JUNCTION TEMPERATURE

100

6V

TJ, JUNCTION TEMPERATURE (oC)

101

5.5V

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

VGS(TH), GATE THRESHOLD VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS

10

PULSE DURATION = 80s

PULSE DURATION = 80s

VDS = 25V
TJ = 25oC

3
4
5
ID, DRAIN CURRENT (A)

FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT

BUZ41A

102

Unless Otherwise Specified (Continued)

15

PULSE DURATION = 80s

101
TJ = 150oC
TJ = 25oC
100

10-1

ID = 6.8A

VGS, GATE TO SOURCE VOLTAGE (V)

ISD, SOURCE TO DRAIN CURRENT (A)

Typical Performance Curves

0.5
1.0
1.5
VSD, SOURCE TO DRAIN VOLTAGE (V)

VDS = 400V
5

2.0

FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE

VDS = 100V

10

10
20
30
Qg(TOT), TOTAL GATE CHARGE (nC)

40

FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

tON

tOFF

td(ON)

td(OFF)
tf

tr
RL

VDS

90%

90%

RG

VDD

10%

10%

DUT

90%
VGS

VGS

FIGURE 14. SWITCHING TIME TEST CIRCUIT

0.2F

50%
PULSE WIDTH

FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

VDS
(ISOLATED
SUPPLY)

CURRENT
REGULATOR

12V
BATTERY

50%

10%

VDD
Qg(TOT)

SAME TYPE
AS DUT

50k

Qgd

0.3F

VGS

Qgs
D
VDS
DUT

Ig(REF)

0
IG CURRENT
SAMPLING
RESISTOR

VDS
ID CURRENT
SAMPLING
RESISTOR

FIGURE 16. GATE CHARGE TEST CIRCUIT

Ig(REF)
0

FIGURE 17. GATE CHARGE WAVEFORMS