Transistor specification parameters

There are a number of standard parameters with abbreviations that

are used to define the performance of a transistor. The definitions of
these parameters are outlined in the table below:

PARAMETER DEFINITION AND DESCRIPTION

Type number The type number of the device is an individual part number given to the device. Device numbers normally conform to the
JEDEC (American) or Pro-Electron (European) numbering systems - see Related Articles under main left hand menu
block. There is also a Japanese standard system for transistor numbering.

Case Case style - a variety of case standard case styles are available. These normally are of the form TOxx leaded devices and
SOTxxx for surface mount devices. Note it is also important to check the pin connections as they are not always standard.
Some transistor types may have their connections in the format EBC whereas occasionally they can be ECB, and this can
cause confusion in some cases.

Material The material used for the device is important as it affects the junction forward bias and other characteristics. The most
common materials used for bipolar transistors are silicon and germanium.

Polarity The polarity of the device is important. It defines the polarity of the biasing and operation of the device. The two types are
NPN and PNP. NPN is the most common type. It has the higher speeds as electrons are the majority carriers and these have
a greater mobility than holes. When run in common emitter configurations, the NPN circuits will use a positive rail voltage
and negative common line, PNP transistors will require a negative rail and positive common voltage.

VCEO Collector emitter voltage with base open circuit

VCBO Collector base voltage with the emitter open circuit

VEBO Emitter base voltage with collector open circuit

IC Collector current

ICM Peak collector current

IBM Peak base current

PTOT Total power dissipation - this is normally for an ambient temperature of 25C. It is the maximum value of power that can
safely be dissipated for that transistor with its stated package.

Tj Junction temperature - care must be taken to ensure that this figure is not exceeded otherwise the device could be damaged
or long term reliability affected. Dissipation / temperature curves are often provided to facilitate calculations.

Tamb Ambient temperature

Tstg Storage temperature. This is the temperature range over which the device may be stored. Outside this range, damage may
occur to the materials used in the device. The operating temperature range is normally well within the bounds of the storage
temperature range.

ICBO Collector base cut-off current

IEBO Emitter base cut-off current

hFE Forward current gain

VCEsat Collector emitter saturation voltage

VBEsat Base emitter saturation voltage

Cc Collector capacitance

Ce Emitter capacitance

Ft Frequency Transition - the frequency where common emitter current gain falls to unity, i.e. the gain bandwidth product for
PARAMETER DEFINITION AND DESCRIPTION

the transistor. It is normally measured in MHz. The operating frequency of the transistor should normally be well below the
transition frequency.

When using the transistor specifications and parameters, it is worth

remembering that the "Absolute Maximum Ratings" detailed in a
transistor datasheet are the values that if they are exceeded may
result in the failure of the transistor. Maximum ratings usually
include collector-to-base voltage, emitter-to-base voltage, collector
current, emitter current, and collector power dissipation.