IPN60R1K0CE

MOSFET
600VCoolMOSCEPowerTransistor

PG-SOT223

CoolMOSisarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOSCEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.

Features
ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
Veryhighcommutationruggedness
Easytouse/drive
Pb-freeplating,Halogenfreemoldcompound
Qualifiedforstandardgradeapplications

Drain
Pin 2

Gate
Pin 1

Applications

Source
Pin 3

Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter

Value

Unit

VDS @ Tj,max

650

RDS(on),max

Qg,typ

13

nC

ID,pulse

11.8

Eoss@400V

1.3

Body diode di/dt

500

A/s

Type/OrderingCode

Package

Marking

IPN60R1K0CE

PG-SOT223

60S1K0

Final Data Sheet

RelatedLinks
see Appendix A

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

1Maximumratings

atTj=25C,unlessotherwisespecified

Table2Maximumratings
Parameter

Symbol

Continuous drain current1)

Values

Unit

Note/TestCondition

6.8
4.3

TC = 25C
TC = 100C

11.8

TC = 25C

46

mJ

ID = 0.8A; VDD = 50V

EAR

0.13

mJ

ID = 0.8A; VDD = 50V

Avalanche current, repetitive

IAR

0.8

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

VDS=0...480V

Gate source voltage

VGS

-20
-30

20
30

static;
AC (f>1 Hz)

Power dissipation

Ptot

5.0

TC=25C

Operating and storage temperature

Tj,Tstg

-40

150

Continuous diode forward current

IS

1.4

TC=25C

IS,pulse

11.8

TC = 25C

dv/dt

15

V/ns

VDS=0...400V,ISD<=IS,Tj=25C

dif/dt

500

A/s VDS=0...400V,ISD<=IS,Tj=25C

Min.

Typ.

Max.

ID

Pulsed drain current2)

ID,pulse

Avalanche energy, single pulse

EAS

Avalanche energy, repetitive

2)

Diode pulse current

3)

Reverse diode dv/dt

3)

Maximum diode commutation speed

2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter

Symbol

Thermal resistance, junction - solder

point

Values

Unit

Note/TestCondition

Min.

Typ.

Max.

RthJS

23.2

C/W -

Thermal resistance, junction - ambient

RthJA
for minimal footprint

160

C/W minimal footprint

Thermal resistance, junction - ambient

RthJA
soldered on copper area

75

Device on 40mm*40mm*1.5 epoxy

PCB FR4 with 6cm2 (one layer 70m
C/W thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.

Soldering temperature, wavesoldering

only allowed at leads

260

Tsold

reflow MSL3

1)

DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5

Pulse width tp limited by Tj,max
3)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
2)

Final Data Sheet

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

3Electricalcharacteristics
Table4Staticcharacteristics
Parameter

Symbol

Drain-source breakdown voltage

Values

Unit

Note/TestCondition

VGS=0V,ID=0.25mA

3.50

VDS=VGS,ID=0.13mA

10

1
-

VDS=600V,VGS=0V,Tj=25C
VDS=600V,VGS=0V,Tj=150C

IGSS

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

0.90
2.34

1.00
-

VGS=10V,ID=1.5A,Tj=25C
VGS=10V,ID=1.5A,Tj=150C

Gate resistance

RG

16

f=1MHz,opendrain

Unit

Note/TestCondition

Min.

Typ.

Max.

V(BR)DSS

600

Gate threshold voltage

VGS(th)

2.50

Zero gate voltage drain current

IDSS

Gate-source leakage curent

Table5Dynamiccharacteristics
Parameter

Symbol

Input capacitance

Values
Min.

Typ.

Max.

Ciss

280

pF

VGS=0V,VDS=100V,f=1MHz

Output capacitance

Coss

21

pF

VGS=0V,VDS=100V,f=1MHz

Effective output capacitance, energy

related1)

Co(er)

14

pF

VGS=0V,VDS=0...480V

Effective output capacitance, time

related2)

Co(tr)

57

pF

ID=constant,VGS=0V,VDS=0...480V

Turn-on delay time

td(on)

10

ns

VDD=400V,VGS=13V,ID=1.9A,
RG=12.2

Rise time

tr

ns

VDD=400V,VGS=13V,ID=1.9A,
RG=12.2

Turn-off delay time

td(off)

60

ns

VDD=400V,VGS=13V,ID=1.9A,
RG=12.2

Fall time

tf

13

ns

VDD=400V,VGS=13V,ID=1.9A,
RG=12.2

Unit

Note/TestCondition

Table6Gatechargecharacteristics
Parameter

Symbol

Gate to source charge

Values
Min.

Typ.

Max.

Qgs

1.5

nC

VDD=480V,ID=1.9A,VGS=0to10V

Gate to drain charge

Qgd

6.5

nC

VDD=480V,ID=1.9A,VGS=0to10V

Gate charge total

Qg

13

nC

VDD=480V,ID=1.9A,VGS=0to10V

Gate plateau voltage

Vplateau

5.4

VDD=480V,ID=1.9A,VGS=0to10V

1)

Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V

2)

Final Data Sheet

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

Table7Reversediodecharacteristics
Parameter

Symbol

Diode forward voltage

Values

Unit

Note/TestCondition

VGS=0V,IF=1.9A,Tf=25C

220

ns

VR=400V,IF=1.9A,diF/dt=100A/s

1.5

VR=400V,IF=1.9A,diF/dt=100A/s

12

VR=400V,IF=1.9A,diF/dt=100A/s

Min.

Typ.

Max.

VSD

0.9

Reverse recovery time

trr

Reverse recovery charge

Qrr

Peak reverse recovery current

Irrm

Final Data Sheet

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

Diagram2:Safeoperatingarea
102

101

1 s
10 s

4
100 s

ID[A]

Ptot[W]

100
3

1 ms
10

-1

10 ms

DC

10-2

25

50

75

100

125

10-3

150

100

101

TC[C]

102

103

VDS[V]

Ptot=f(TC)

ID=f(VDS);TC=25C;D=0;parameter:tp

Diagram3:Safeoperatingarea

Diagram4:Max.transientthermalimpedance

102

10

1 s
10 s
0.5
100 s

100

101
0.2

1 ms

ZthJC[K/W]

ID[A]

0.1

10 ms

-1

10

0.05
10

0.02

0.01

DC

single pulse
10-2

10-3

10-1

100

101

102

103

10-2

10-5

10-4

10-3

VDS[V]

10-1

100

101

tp[s]

ID=f(VDS);TC=80C;D=0;parameter:tp

Final Data Sheet

10-2

ZthJC=f(tP);parameter:D=tp/T

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600VCoolMOSCEPowerTransistor
IPN60R1K0CE

Diagram5:Typ.outputcharacteristics

Diagram6:Typ.outputcharacteristics

14

9
20 V
10 V
8V

20 V
8

10 V

12

8V
10

6
8

ID[A]

ID[A]

7V

7V

5
4

6V

5.5 V

5V

6V

5.5 V
2

5V

4.5 V

4.5 V
0

10

15

20

10

VDS[V]

15

20

VDS[V]

ID=f(VDS);Tj=25C;parameter:VGS

ID=f(VDS);Tj=125C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

Diagram8:Drain-sourceon-stateresistance

5.0

3.0
5V
5.5 V

4.5

6V

6.5 V

7V
2.5

4.0
2.0

RDS(on)[]

RDS(on)[]

3.5

3.0

2.5

10 V

98%
1.5
typ
1.0

2.0
0.5
1.5

1.0

0.0
-50

-25

25

ID[A]
RDS(on)=f(ID);Tj=125C;parameter:VGS

Final Data Sheet

50

75

100

125

150

Tj[C]
RDS(on)=f(Tj);ID=1.5A;VGS=10V

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

Diagram9:Typ.transfercharacteristics

Diagram10:Typ.gatecharge

12

10
25 C
9

10

120 V

480 V

VGS[V]

ID[A]

6
150 C

5
4

3
2

1
0

10

12

VGS[V]

10

15

Qgate[nC]

ID=f(VGS);VDS=20V;parameter:Tj

VGS=f(Qgate);ID=1.9Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

Diagram12:Avalancheenergy

10

50
25 C
125 C

45
40
35

101

IF[A]

EAS[mJ]

30
25
20
0

10

15
10
5

10-1

0.0

0.5

1.0

1.5

2.0

25

50

VSD[V]

100

125

150

Tj[C]

IF=f(VSD);parameter:Tj

Final Data Sheet

75

EAS=f(Tj);ID=0.8A;VDD=50V

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

Diagram13:Drain-sourcebreakdownvoltage

Diagram14:Typ.capacitances
104

700
680

103

660

Ciss
640
620

C[pF]

VBR(DSS)[V]

102

600

Coss
101

580
Crss
560

100

540
520
-75

-50

-25

25

50

75

100

125

150

175

10-1

100

200

Tj[C]

300

400

500

600

VDS[V]

VBR(DSS)=f(Tj);ID=0.25mA

C=f(VDS);VGS=0V;f=1MHz

Diagram15:Typ.Cossstoredenergy
3.0

2.5

Eoss[J]

2.0

1.5

1.0

0.5

0.0

100

200

300

400

500

600

VDS[V]
Eoss=f(VDS)

Final Data Sheet

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics

Diode recovery waveform

V ,I

Rg1

VDS( peak)

VDS

VDS

VDS

trr

IF

Rg 2

tF

tS

dIF / dt

IF
QF

IF

dIrr / dt trr =tF +tS

Qrr = QF + QS

Irrm

Rg1 = Rg 2

10 %Irrm

QS

Table9Switchingtimes
Switching times test circuit for inductive load

Switching times waveform

VDS

90%

VDS
VGS

VGS

10%

td(on)
ton

tr

td(off)

tf
toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit

Unclamped inductive waveform

V(BR)DS
ID

VDS

VDS

Final Data Sheet

10

ID

VDS

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

6PackageOutlines

DOCUMENT NO.
Z8B00180553
SCALE
DIM
A
A1
A2
b
b2
c
D
E
E1
e
e1
L
N
O

MILLIMETERS
MIN
MAX
1.52
1.80
0.10
1,50
1.70
0.60
0.80
2.95
3.10
0.24
0.32
6.30
6.70
6.70
7.30
3.30
3.70
2.3 BASIC
4.6 BASIC
0.75
1.10
3

INCHES
MIN
0.060
0.059
0.024
0.116
0.009
0.248
0.264
0.130

MAX
0.071
0.004
0.067
0.031
0.122
0.013
0.264
0.287
0.146
0.091 BASIC
0.181 BASIC
0.030
0.043
3

2.5
0

2.5
5mm

EUROPEAN PROJECTION

ISSUE DATE
24-02-2016
REVISION
01

Figure1OutlinePG-SOT223,dimensionsinmm/inches

Final Data Sheet

11

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

7AppendixA
Table11RelatedLinks
IFXCoolMOSWebpage:www.infineon.com
IFXDesigntools:www.infineon.com

Final Data Sheet

12

Rev.2.0,2016-04-29

600VCoolMOSCEPowerTransistor
IPN60R1K0CE

RevisionHistory
IPN60R1K0CE
Revision:2016-04-29,Rev.2.0
Previous Revision
Revision

Date

Subjects (major changes since last revision)

2.0

2016-04-29

Release of final version

TrademarksofInfineonTechnologiesAG
AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade,
EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon,
ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE,
PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS,
SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet

13

Rev.2.0,2016-04-29