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UM Power Energy Dedicated Advanced Centre (UMPEDAC), Level 4, Wisma, R&D UM, Jalan Pantai Baharu, 59990 Kuala Lumpur, Malaysia
Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia
c
School of Energy Management, Faculty of Engineering, Shri Mata Vaishno Devi University, Katra 182320, (J & K), India
b
art ic l e i nf o
a b s t r a c t
Article history:
Received 12 June 2014
Received in revised form
29 September 2015
Accepted 17 December 2015
Available online 4 January 2016
This paper presents a comprehensive review on mathematical modeling methods of photovoltaic (PV)
solar cell/module/array which can be used for power system dynamic modeling purpose. The intermittent and non-linear properties of PV solar cells necessitate accurate modeling of such elements for
power system studies. Large scale integration of photovoltaic distributed generation (PVDG) systems into
the smart power grid can adversely affect the stability of whole network if the solar plant is not designed
properly. A model of solar cell which can predict the PV system output precisely would be helpful to
improve reliability and stability of the intelligent utility network. For the smart grid applications which
integrate the rapidly growing technologies together with renewable resources, the suitable dynamic
model of PV plant is very essential at preliminary evaluation steps. In this paper, a new classication is
presented on existing PV cell/module/array modeling methods. Modeling techniques are categorized in
two main classes, namely, circuitry based methods and equation based methods. The former class
encompasses two sub-classes i.e. embedded function blocks (EFBs) and piecewise linear circuit (PLC)
techniques. The second class also consists of two sub-classes i.e. analytical and numerical techniques. The
characteristics of each class and its sub-classes are also analyzed and compared to others. Comparison
between the methods in both categories indicates that the former class is easy to implement in power
system simulation software. The latter class can be exploited to estimate parameters of solar cell in
collaboration with EFBs method and vice versa. The second class is more accurate than the rst although
its computational burden is further. It is envisaged that this paper can serve researchers and designers
who work in the eld of solar power plant dynamic modeling as useful source of information.
& 2015 Elsevier Ltd. All rights reserved.
Keywords:
Renewable energy
Distributed generation
Solar PV plant
Power systems
Smart grid
Contents
1.
2.
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Photovoltaic system modeling methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1.
Circuitry based methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1.1.
Embedded function blocks (EFBs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1.2.
Piecewise linear circuit (PLC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.
Equation based methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.1.
Analytical techniques. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.2.
Numerical techniques . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3. Comparison between the methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4. Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Acknowledgements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
http://dx.doi.org/10.1016/j.rser.2015.12.137
1364-0321/& 2015 Elsevier Ltd. All rights reserved.
133
133
133
135
145
147
149
157
170
170
170
170
132
Nomenclature
T
Temperature difference between the module temperature and the STC temperature (K)
A( n )Ideality factor of 1st diode in two-diode model of
PV cell
a1
Ideality factor of 1st diode in two-diode model of
PV cell
a2
Ideality factor of 2nd diode in two-diode model of
PV cell
ANN
Articial neural network
BIPV
Building integrated photovoltaic
CMPPT Current-based computational MPPT
CSI
Irradiation correction coefcient for cell output
current
CSV
Irradiation correction coefcient for cell output
voltage
CTI
Temperature correction coefcient for cell output
current
CTV
Temperature correction coefcient for cell output
voltage
DE
Differential evolution
Dp
Diode representing peripheral effect
DSSC
Dye-sensitized solar cell
Eg
Band gap energy of PV material (1.17 eV for Si
materials)
EMTDC Electromagnetic transients including DC
EMTP
Electromagnetic transient program
G
Solar irradiance (kW/m2)
GNG
Growing neural gas
Gr
Reference irradiance under standard test condition
(W/m2)
GUI
Graphical user interface
I0
Reverse saturation current (A)
I01
Reverse saturation current of 1st diode in two-diode
PV cell model (A)
I02
Reverse saturation current of 1st diode in two-diode
PV cell model (A)
ID1
1st Diode current in two-diode solar cell model (A)
ID2
2nd Diode current in two-diode solar cell model (A)
Im,ref
Current at MPP (A) at STC normally available in
manufacturer's datasheet
IMPP
Output current at maximum power point (A)
Iph
Photon current (A)
Irs
Reverse saturation current at STC (A)
Is
Saturation current (A)
Isat,r
Reference diode saturation current under standard
test condition (A)
Isc,ref
Short-circuit current (A) at STC normally available in
manufacturer's datasheet
Isc,STC
Short circuit current at STC
J01
Saturation current density for D1 diode
J02
Saturation current density for D2 diode
J0p
Current density through Dp diode
J2
Current density through D2 diode
k( kB) Boltzmann constant (1.3806488 10 23 J/K)
Ki
Short-circuit current coefcient
Kv
Open circuit voltage coefcient
kWp
Kilowatt peak
LSR
Least square regression
m4
Slope of 4th segment in
Mc-Si
Multicrystalline silicon
MPP
Maximum power point
MPPT
Maximum power point tracker
Np
Number of PV cells in parallel
Ns
Number of PV cells in series
P&O
Perturbation and Observation
Piecewise Linear PWL
Piecewise Linear Circuit PLC
PLPB
Piecewise linear parallel branch
Pmax,e
Maximum power calculated experimentally
Pmax,m
Maximum power calculated mathematically
PMPP
Output power at maximum power point
PSCAD Power System Computer Aided Design
PSO
Particle Swarm Optimization
PV
Photovoltaic
PVA
PV Array
PVDG
Photovoltaic distributed generation
PWL
Piecewise linear
q
Electron charge (1.60217733 10 19 C)
r
Ratio of recombination area
Rp
Resistance of peripheries ()
RP Rsh Parallel resistance of PV equivalent circuit ()
RS
Series resistance of PV equivalent circuit ()
Rs1
First component of series resistance ()
Rs2
Second component of series resistance ()
Rsho
Effective resistance at short-circuit ()
Rsub
Resistance representing substrate and microscopic
inhomogeneity ()
Sc
Benchmark reference solar irradiation level during the
test condition
STFT
Special transfer function theory
SUR
Modied GaussSeidel method
Sx
New level of the solar irradiation
T
Absolute temperature (K)
Ta
Ambient temperature (K)
TLBO
Teaching learning based optimization
Tr
Reference cell temperature under standard test condition (K)
Tref
Reference temperature (25 C)
Tx
New level of the solar temperature
UPS
Uninterruptable Power Supply
VBA
Visual Basic for Applications
Vbr
Breakdown voltage (V)
Vm,ref
Voltage at MPP (V) at STC normally available in manufacturer's datasheet
VMPP
Voltage at maximum power point (V)
VMPPT
Voltage-based computational MPPT
Voc,ref
Open-circuit voltage (V) at STC normally available in
manufacturer's datasheet
VOC,STC PV cell open-circuit voltage at standard test
conditions (V)
VT
Thermal voltage (V)
VT1
Thermal voltage of 1st diode in PV cell two-diode
model (V)
VT2
Thermal voltage of 2nd diode in PV cell two-diode
model (V)
1. Introduction
The application of photovoltaic distributed generation (PVDG)
systems, either as standalone or grid-connected plants, has been
growing over the last decade. The latest studies in the eld of
renewable energy systems (RESs) conrm the ever-increasing
growth in usage of RESs to globally comply with technical, economic, and legal requirements. The majority of these studies have
put emphasize on two types of renewable energy (RE) prime
movers which are solar and wind energies. Solar photovoltaic (PV)
seems to be more attractive than the others since it is noiseless,
easy to operate, almost maintenance free, and has no carbon
footprint. The cumulative global capacity of installed solar PV
system was about 9.2 GW by the end of 2007. According to IEA
PVPS annual report [1], this value grew to 125 GW (for IEA PVPS
countries) by the end of 2014. For the time being, Germany and
Italy are the leader countries in installation of solar PV systems
(about 74%). Meanwhile, more than 93% of solar PV systems were
installed in the US, Japan, and France in 2009. In this year, the
global installed capacity of solar PV system was approximated to
be about 7 GW in whole world. The International Energy Agency
(IEA) estimates that solar power is able to supply as much as 11% of
worldwide electricity generation by 2050. The European Council
has decided to encourage the world to supply their energy needs
(20% of total need) from RE resources. Taking into account these
issues, solar PV market is very competitive and hence solar PV
array manufacturers try to actively improve their products in
terms of quality and price [2].
The interconnection of PVDG systems into distribution networks changes the traditional passive power systems to active. In
active networks, the electrical energy can ow in both directions
and hence the demand side can also contribute in the generation
of electricity [3]. This can bring tremendous technical and economic benets to both utility companies and customers. Localized
generation of electricity, loss reduction, voltage improvement,
frequency control, and net metering are among examples brought
to this end. At the same time, the technical impacts due to PVDG
integration have to be studied for planning and operating purposes. The technical impact of PVDG can be assessed by power
system studies i.e. steady-state and/or dynamic analyses [4].
Steady-state such as load ow and fault analyses are fundamental
investigations that can evaluate the ow of power and fault current when PVDG is present in the system. These studies are
important in the planning stage which suitable location and generation capacity for the solar PV plant is determined through. In
addition, dynamic studies (e.g. small signal stability analysis) are
necessary to assess overall power grid permanence and design
robust control systems [58].
The accurate model of solar PV generator can be exploited to
precisely model and evaluate smart grid operation. Smart grid
integrates modern digital technologies to manage the power
generation, transmission, and consumption between distributed
energy resources (DERs), demand, and the main supply. It utilizes
communication channels between smart generators and consumers to exchange and monitor operating data. These characteristics improve the operation of whole grid and balance
between the generation, load, environment, and economic constraints. To design a smart power grid, it is necessary to technically
evaluate the system in advance. Comprehensive studies are
required to guarantee the dynamic and transient stability of smart
grid and thus to implement it physically. Dynamic studies can be
conducted through modeling of system components (i.e. generators, loads, and controllers) in evaluation software. To obtain an
accurate model, the mathematical formulation which represents
the behavior of an element should be obtained properly and
embedded in the software. For example, non-linear equations of
133
PV generator, derived through its equivalent circuit, must accurately approximate the relationship between its input and output
parameters. The more the precise dynamic model, the more the
reliable response can be expected from the implemented system
in the software.
In a PVDG system, a solar cell is the smallest unit of a PV
generator. The parallel and/or series connections between solar
cells make a PV module and further a PV array. Operation of the PV
generator depends on PV cell under variable environmental conditions together with the power system which is connected to [9].
For the time being, different types of solar PV technology are
available in the market [10]. The dynamic properties of each type
defers from the others. PV array manufacturers normally provide
their customers with datasheet of their products under standard
test condition (STC). Such information is normally unusable and
hence can be estimated for actual operating conditions through
dynamic modeling.
In a solar PV plant, it is also compulsory to look into the
dynamics of power conditioning unit (e.g. converter) connected to
PV array. The operating point of PV array is highly dependent to
the load characteristic. Power converter captures the maximum
power produced by the PV array through impedance matching at
the PV array output terminal. To control power converter, different
maximum power point tracking (MPPT) techniques have been
proposed by the literature [1116].
For all aforementioned reasons, accurate dynamic modeling of
solar PV generator is essential for the fast developing technologies
which integrate RESs with smart grid application.
The purpose of this review article is to analyze solar PV cell/
module/array modeling techniques and compare them together.
This paper can provide researcher and engineers who actively
work in the area of power system dynamic studies with complete
source of information about the solar cell modeling techniques.
The readers can trade off easily between the methods since the
modeling techniques together with their implementation
approaches are presented in this paper.
Different classications for PV cell/module/array modeling
techniques based on uniform and non-uniform irradiation have
been proposed by the literature [17]. In this paper, most recent
solar cell modeling techniques are reviewed and classied. Each
class has its own characteristics that are investigated as well. There
are two main classes, namely, circuitry based methods and equation based methods. Each class is divided into two sub-classes
which are embedded function blocks (EFBs) and piecewise linear
circuit (PLC) techniques for the former as well as analytical and
numerical techniques for the latter, respectively.
This paper is organized as follows: Section 2 explains about the
PV equivalent circuits (see Table 1) and then the rst and second
classes of modeling methods are analyzed in this section. Section 3
presents the comparison between the modeling techniques.
Finally, concluding remarks are described in Section 4.
134
Table 1
PV solar cell equivalent circuits and associated parameters.
Model
Number of Diode(s)
Number of parameters
Abbreviation
Single-diode
1D3P
1D4P
1D5P
2D5P
2D6P
2D7P
Double-diode
135
Table 1 (continued )
Triple-diode
3D7P
3D8P
3D9P
136
Fig. 1. Schematics of equivalent circuits for solar cells without current sources, (a) single-diode model, (b) modied double-diode model and (c) modied 3-diode model
[20].
cell model has been extended to (in parallel and series arrangements) make the module and nally array of solar cells. As shown
in Fig. 2, the external controlled current source is the representative of anti-parallel diode branch. Photocurrent (I irr ) is generated when the cell is in exposure of sunlight. I irr linearly changes
when solar radiation varies and the cell temperature is constant.
I dio is the current which ows through the anti-parallel diode. I P is
the shunt current own due to the presence of shunt resistor (RP ).
Substituting relevant expressions for I dio and I P yields:
I I irr I dio I P
qV IRS
V IRS
1
I I irr I 0 exp
nkT
RP
137
curve fitting
Levenberg/
Marquardt
curve
fitting
Newton/Raphson
solution of the
double
exponential
model equation
computation of
first partial
derivatives
of fitting function
testing
testing
independently
Fig. 4. LevenbergMarquardt curve tting method basic requirements [27].
K4
K5
K6
K7
K8
K9
I irr;ref
!
10
RS RS;ref
11
7:3174103
2
0
1:47
RP
G
RP;ref Gref
12
1:612610 3
K 11
2:3034106
K 12
2:812210 2
W
1000 m
2
300 K
where I irr;ref and T ref (25 C) are photocurrent and cell temperature at STC, respectively. 0T is the relative temperature coefcient of short-circuit current given by:
T2
T 1108
1:264104
11:8003
Photocurrent, which depends on the solar radiation and temperature, has been calculated through:
G
I irr I irr;ref
1 0T T T ref
6
Gref
0
T
4
Parallel (RP ) and series (RS ) resistances are two other unknowns
calculated through:
4:4710 3
5:72910 7
0:1098
44:5355
K 10
Eg;ref Eg
exp
kT ref kT
Eg 1:16 7:02 10
K1
K2
K3
3
where
Table 2
Values of input parameters and coefcients [22].
K0
T
T ref
I 0 I 0;ref
where T is the absolute temperature coefcient of shortcircuit current. The cell temperature as a function of solar irradiation has been obtained through:
NOCT 201C
8
T T Amb
0:8
Five parameters (nref , I irr;ref , I 0;ref , RS;ref , and RP;ref ) have been
recognized by (4) through (12). These unknowns have been
obtained by simultaneously solving a system of ve equations. The
rst equation of system has been derived by evaluating (4) at
open-circuit condition as:
qV OC;ref
V OC;ref
1 N
13
0 N P I irr;ref N P I 0;ref exp
S
N S nref kT ref
N P RP;ref
where I irr;ref , I 0;ref , RP;ref , and V OC;ref are photocurrent, reverse
saturation current, shunt resistance, and open circuit voltage at
STC, respectively. The second equation has been derived by evaluating (4) at short-circuit condition as:
I SC;ref NNS RS;ref
qI SC;ref RS;ref
1 N P
I SC;ref NP I irr;ref NP I 0;ref exp
S
N S nref kT ref
N RP;ref
P
14
The third equation has been formulated at MPP under STC as:
1
2
3
0
q V mp;ref I mp;ref NNPS RS;ref
A 15
I mp;ref N P I irr;ref N P I 0;ref 4exp@
N S nref kT ref
15
138
I mp;ref
V mp;ref
qN P I 0;ref
exp@
N S nref kT ref
N S nref kT ref
0
qI
1 n 0;ref
exp@
ref kT ref
N S nref kT ref
AN
1
S
NP RP;ref
16
A RS;ref
RP;ref
Eq. (16) makes sure that the open-circuit temperature coefcient ( T ) has been approximated properly by the model since:
V OC V OC;ref T T T ref
17
and thus V OC at some temperature T can be found through (4)
using the same technique exploited to derive (13), and hence:
qV OC T
V OC T
1 N
18
0 N P I irr N P I 0 exp
S
N S nkT
N P RP
By substituting the values of I irr , I 0 , RP , and n using (5) through
(12) and the term V OC T from (17) the fth Eq. (16) can be written
in terms of reference values only.
The system of ve equations (13) (through 16) including (18)
has been solved using non-linear equation solver which is socalled fsolve in MATLAB. This model accurately estimates IV and
PV curves, maximum power point (MPP) values, short-circuit
current (I SC ), open-circuit voltage (V OC ) at different levels of irradiation, and cell temperature. The ability of this model to calculate
the mentioned parameters has been examined for monocrystalline
and polycrystalline panels. For the power system dynamic modeling, PV arrays in any size can be modeled by this method in any
simulation platform such as Matlab/Simulink and PSCAD/EMTDC.
To demonstrate the accuracy of this model a series of outdoor
experiments have also been conducted for several congurations
of PV array. The consistency between IV and PV curves for
estimated and experimental results conrms the efcacy of this PV
cell-to-module-to-array model.
A polycrystalline PV array model for stand-alone applications
was presented by Chowdhury et al. [22]. To investigate the performance of this system under different loading and weather
conditions, a stand-alone PV system has been simulated in Matlab/
Simulink. This model is based on the calculation of parameters for
the Thevenin's equivalent circuit of each individual cell located in
the PV array. The standard double-diode model of polycrystalline
cell has been used to implement the PV system model in an
embedded environment as:
"
#
"
#
V IRs
V IRs
V IRs
vt
Avt
I I ph I s1 e
1 I s2 e
1
19
Rp
where vt kT
q . I and V are PV cell current and terminal voltage,
respectively. k is Boltzmann's constant, T is absolute temperature,
and q is the electron charge. I ph , I s1 , and I s2 are photocurrent, rst,
and second diodes saturation current, respectively. Rs and Rp are
the series and parallel resistances is double-diode equivalent circuit. A is a diode parameter (i.e. ideality factor) and set to 2 which
reects the Shockley-Read-Hall recombination effect in spacecharge layer of photo-diode. In this paper, (20) through (25)
have been proposed to empirically obtain the PV cell double-diode
W
parameters where the effects of solar irradiation (E in m
2 ) and
ambient temperature (T in 1K) are supposed to be considered as:
I ph K 0 E1 K 1 T
20
K
3
I s1 K 2 T 3 e T
21
I s2 K 4 T
1:5
K
5
e T
22
A K6 K 7T
Rs K 8
23
K9
K 10 T
E
24
Rp K 11 eK 12 T
25
V th
vt
"
N p Rp I ph I s1 e
I sc
I sc Rs
vt
V th
Avt
1 I s2 e
!
1 I s2 e
Rp Rs
I sc Rs
Avt
26
!#
27
V th
I sc
28
e Ns KTA GIsc T
Is
T 0
GI sc
I rs 1
j jT q
Ns KTA
e
31
139
Fig. 7. IV curves of Solarex SX5 PVM obtained through the experiment and
simulations [35].
I ph0 I sc ; A0 2
I s10
34
I sc
I sc
; I s20
qV oc
qV oc
1
kT
2kT
2e
2e
1
35
and the rst iterative loop equations have been derived as:
3
dV
1
5
Rs0 4 V V oc
dI
X 1v X 2v R1p
I0
36
I s1 qV oc
I s2 qV oc
e kT ; X 2v
e AkT
vt
Avt
37
X 1v
6
6
6
Rp0 6
6 1
6
4dV
dI V 0
7
7
7
1
7
X 1i X 2i 7
7
5
Rs0
38
I s1 qIsc Rs0
I s2 qIsc Rs0
e kT ; X 2i
e AkT
vt
Avt
39
I I sc
X 1i
140
If the rst loop is diverged, the second loop will run by the
algorithm. The equations of second loop given by:
2
3
6
Rp0 6
4
7
V mpp I mpp Rs0
7
5
qV mpp I mpp Rs0
qV mpp I mpp Rs0
kT
AkT
1 I s2 e
1
I mpp I ph I s1 e
40
I s10
oc
I ph VRp0
qV oc
kT
1
I s20
" qI
I ph0 I sc I s1 e
sc Rs0
kT
oc
I ph VRp0
41
qV oc
e AkT 1
" qI
e
1 I s2 e
sc Rs0
AkT
1
I sc Rs0
Rp0
42
Start
Adjust the
value of A
no
Error is minimized?
End
Fig. 9. The coding program owchart to determine the nal values of A and Rs [36].
141
Fig. 11. Different models of solar module in Np parallel and NS series branches [38].
V op V oc
h
i
I
V oc :ln 1 Iop
1 exp b1n
sc
43
Ei
I sc TC i T T N
EiN
45
Vx s
V max V op
Ei
Ei
TCV T T N sV max sV max V min exp
ln
EiN
EiN
V max V min
46
I sc and V oc are short-circuit current and open-circuit voltage,
W
respectively, at 1000 m
2 and 25 C. V max is the open-circuit voltage
W
at 25 C and irradiation above 1200 m
2 and V min is the open-circuit
W
voltage at 25 C and irradiation bellow 1200 m
2 . V op is the optimal
voltage. T is PV panel temperature in C. Ei is the effective solar
W
irradiance in m
2 . T N is 25 C. E iN is the nominal effective solar
W
is short-circuit temperature
irradiation which is 1000 m
2 . TC i
A
. TCV is the open-circuit temperature coefcient in
coefcient in 1C
V
1C . Dynamic equation of PVM considering the internal capacitance
has been given by:
i3
2h
V
1
V
1
I x 4 1 exp bV x b 5 I i
I V I i
t C x
Cx
Cx
1 exp 1b
47
142
solar cell, the shunt resistance has been neglected in this method.
The equivalent circuit of short-circuit and open-circuit conditions
are shown in Fig. 8.
Since the value of diode current is negligible, the photocurrent
is directly proportional to solar irradiation. Taking into account the
impacts of temperature and irradiance on photocurrent, it can be
estimated as:
Fig. 13. IV Characteristic of photovoltaic array [40].
I ph Ga ; T I scs
Ei
T
EiN
48
49
50
Ga
1 I sc T T s
Gas
51
52
where V ocs is open-circuit voltage in STC and V oc is opencircuit voltage temperature coefcient. As illustrated in Fig. 8, the
value of photocurrent is equal to the current trough the diode as:
I ph Ga ; T I D Ga ; T
53
V oc T
V t T
55
1
17
5I ph
t
6e
I mpp I ph 4
V oc
Vt
56
1
57
I mpp
V mpp IRs
Vt
I sat
Vt e
V mpp IRs
Vt
58
1 IsatV tRs e
143
Fig. 15. Model developed in Matlab/Simulink to evaluate the PV module behavior under operating conditions [42].
Fig. 16. One Diode IV characteristic (solid curve) eatimated by two (dotted lines)
and four (dashed lines) linear segments over the interval E 0 ; V OC [43].
Fig. 18. Four segment piece wise linear (PWL) circuit and IV curve [44].
Matlab/Simulink (see Fig. 10). Photovoltaic current has been considered as a function of voltage. Voltagecurrent characteristic has
been taken into account as a function of both insulation and
temperature. A lookup table has been prepared to relate the
temperature to the ideality factor and series resistance. This model
has been veried for three types of solar cell with different
materials i.e. multicrystalline silicon, mono-crystalline silicon, and
CIS thin lm. The efcacy of this model has been proved by making
comparison between the simulation results and the manufacturer's datasheet information.
Huan-Liang et al. [37,38] presented an equation oriented
method which enables the users to consider the direct impact of
changes in the solar irradiance and the cell temperature on the
efciency of PV modules. This method has been implemented in
Matlab/Simulink through function blocks. Single-diode model of
PV cell has been utilized to extract the IV characteristic curve. The
144
Fig. 20. Addition of ideal DC voltage source to consider the open-circuit voltage
variation [44].
Fig. 19. Determination of PWL vertex [44].
in series.
ref
VC
2U MPP;ref U oc;ref
I sc;ref
I MPP;ref
I sc;ref I MPP;ref ln 1 I sc;ref
60
where
U MPP;ref maximum power point voltage at the reference
condition (V);
I MPP;ref maximum power point current at the reference
condition (A);
I sc;ref short-circuit current at reference condition (A).
is a function of temperature given by:
T 273
61
Rs
U oc;ref U MPP;ref
ref ln 1 IMPP;ref
I sc;ref
I MPP;ref
62
I ph I 0 I C
AkT C
ln
RS I C
e
I0
63
where
I C : PV cell output current (A);
I ph : Photocurrent, function of irradiation level and junction
temperature (5 A);
I 0 : Reverse saturation current of diode (0.0002 A);
RS : PV cell series resistance (0.001 );
T C : Reference PV cell operating temperature (20 C);
V C : PV cell output voltage (V).
The impacts of solar irradiation and temperature variations on
the cell's output voltage and photocurrent has been included in
this model by four coefcients (correction factors). In this case, C TV
and C TI for the temperature effect and C SV and C SI for the irradiation effect on the voltage and photo-current has been formulated as:
C TV 1 T T a T x
64
65
C TI 1
SC
T x T a
C SV 1 T S Sx SC
C SI 1
1
S x S C
SC
66
67
where
T 0:004, T 0:06, and Ta 20 C is ambient temperature
during the test conditions. Eqs. (64) and (65) can be used to calculate the modied model of PV cell for another temperature (T x ).
If the temperature does not change over a typical day, the irradiation level, in turn, affects the output voltage and photocurrent.
Eqs. (66) and (67) give the new operating point for the solar cell in
terms of the variation in solar irradiance. The updated values of
output voltage and photocurrent have been obtained as:
V CX C TV C SV V C
68
I phx C TI C SI I ph
69
145
146
Vd
Id d d
R1 R2 R3 R4
R1
R2
R2
R4
E1 E 2 E 3
E1 E2 E3
m4 V d
; E 3 r V d r E4
70
R2 R3 R4
R2 R3 R4
where
I d : Input current into the PV single-diode model (A);
R1 through R4 : Approximated resistances in each segment ();
m4 : 4th segment slope.
This model has been simulated by electromagnetic transient
program (EMTP) and Matlab/Simulink. In comparison with the real
PV and IV curves extracted from the datasheet, the results
obtained through this method are reasonably accurate.
Campell [44] introduced a exible and reliable piecewise linear
(PWL) PV module dynamic model for power electronic applications. This model has been implemented in PSCAD/EMTDC software and the standard library components of this software have
been utilized to simulate this PV system. A single-diode model of
PV array has been exploited and to achieve an accurate PV nonlinear IV curve, three series connected diodes have been utilized
together with two by pass resistors in parallel with one pair of
mentioned diodes (see Fig. 18). The PV operating point is determined by its load characteristic and thus to t the IV curve, the
load resistance has been varied from zero to innity. The more the
bypass resistors, the more piecewise linear sections can be created
and thus the non-linear IV curve becomes more accurate.
The operation of proposed circuitry in Fig. 18 depends on the
load resistance. If the load resistance is trivial, all of the diodes
would be turned-off. In this case, there is a path for the voltage to
increase across the bottom diode and hence this forms the rst
segment of IV curve in constant-current region. Along with the
increase in the load resistance, the voltage across the bottom diode
also increases and this diode is turned-on accordingly. This matter
leads to increase in current drawn from the PV source and thus the
PV system operating region is pushed towards the second segment. If the middle resistor is bigger than the top one, the middle
diode is turned-on earlier than the top diode and hence the third
section of proposed IV characteristic is attained. Eventually, the
top diode is also turned-on and the PV source operates in
constant-voltage region (in segment 4) of PWL curve.
To calculate the PWL model parameters, several methods have
been suggested in this paper. In the rst approach, the values of
diode turn-on voltage and bypass resistor can be chosen by trialand-error in order to match the IV characteristic obtained
through PWL technique with the reference curve available in the
datasheet. Based on the information provided by manufacturers, it
is also possible to t the curve through minimum descriptor
length (MDL) which is a curve-tting method [44,45]. If the data
from manufacturer is not accurate pre-tting can be applied
through PV-specic method [44,46]. Sandia National Laboratories
model [44,47] and database can be used as well in order to produce the vertices of PWL curves through the ve key points (i.e.
short-circuit, open-circuit, and MPP) on IV curve (see Fig. 19).
Ignoring the method which is utilized to t the IV curve, to
nd PWL parameters, the next step is to obtain Rsh and Rs which
has been considered as the slopes of rst and fourth segments,
respectively, as:
Rsh R1
Rs R4
71
V oc 0:5 V oc V mp
I xx I oc
72
0:5V oc V sc
I sc I x
10 Rmid
10 Rtop
6
106 R
Rsh 106 Rmid 6 top
10 Rmid
10 Rtop
73
3
106 R
Rsh 0:001 10 3 Rmid 6 top
R3 Rs
10
Rmid
3
Rmid
10 Rtop
74
106 Rtop
106 Rtop
V mp 0:5V oc
I x I mp
75
R3
0:5 V oc V mp V mp
I mp I xx
76
0:5V oc V sc I x Rs
1
77
Rtop Rmid
106
1
V mid V mp 0:5V oc Rs I mp I x
V top V oc V bot V mid
Rtop 10 3
Rtop Rmid 10 3
!
78
79
80
where
0
qV oc
V oc;new Rsh I sc I 0 e kT 1
147
81
The model proposed in this paper is robust, simple, and exible. It is very useful for the purpose of power system dynamic
studies since it can be implemented in any software platform
which contains library of electrical circuitry components.
Equation-oriented methods are exploited to model the nonlinear PV cell characteristics analytically and/or numerically. The
implicit non-linear equations that govern the mathematical model
of PV cell are discussed and examined in this kind of modeling
148
Fig. 26. PV array model in simulation software using controlled current source, equivalent shunt and series resistors, and the equation of the model current I s [59].
Fig. 27. IV curves for different (a) Irradiance levels. (b) Temperature levels [58].
82
V mp 172:440 0:0115G
83
T 299:377 0:023G
84
Fig. 28. Top-level ow-chart of the two-step procedure to extract the PV module
parameters [61].
which the value of the duty cycle has been obtained through. Since
both the steady-state and dynamic behaviors (in the two aforementioned methods) are not obvious, it is possible to claim that
the use of the GNG is more appropriate if:
parameters;
the number of experimental plant data is limited.
149
V IRs
I D2 I 02 exp
1
a2 V T2
86
150
Fig. 29. (a,b) Schematic representation of the PV panel partitioned into two 20-cell sub-panels. (c) Representation of PV cell equivalent circuit in darkness [62].
Fig. 31. Power vs. Temperature vs. 0.75 kW/m2 irradiance [63].
87
To evaluate performance of PV plant models, a solar PV generator has been interfaced to DCDC boost converter at DC side
and the average model of inverter at AC side. For the purpose of
MPPT, Perturb & Observe (P & O) algorithm has been exploited as
well. The results conrm that the PV model is precise. Accuracy of
partial shading model has been evaluated which agrees with
theoretical prediction.
In another paper, Ishaque et al. [58] have exploited differential
evolution (DE) technique in order to model the PV module. This
method provides the users with the ability to calculate model
parameters using the real information in manufacturers datasheet. DE technique enables users to simultaneously compute all
the parameters at different level of temperature and solar irradiance. There are ve parameters for a solar PV cell i.e. I PV , I 0 , a, RS ,
and RP . First two parameters have been calculated analytically and
others computed using DE method. PV single-diode model has
been used to decline the run time. DE implementation procedure
has been divided into four steps i.e. initialization, mutation,
crossover, and evaluation by selection (see Fig. 25). Firstly, a
population including N P elements with D dimension should be
created as:
X i;G X 1;i;G ; X 2;i;G ; ; X j;i;G ; ; X D;i;G
88
where X j;i;G represents a real-valued parameter vector which
creates a candidate solution for the optimization algorithm.
The initial values are generated randomly provided that they
are located in a boundary limited to X L at lower level and X H at
upper level of searching area. Secondly, for a given vector X i;G the
algorithm randomly selects three distinct vectors in the range of
1; N P ]. To generate a donor vector V i ; G a mutation scaling factor
(F) is also added from the range 0; 1 as:
V i;G X r1;G F X r2;G X r3;G
89
where X r1;G , X r2;G , and X r3;G are randomly selected vectors.
Thirdly, to achieve crossover, binomial strategy (in DE algorithm
there are two types of crossover methods i.e. exponential and
binominal) has been exploited as:
(
V j;i;G ; if rand r CR or j jrand
U j;i;G
90
o:w:
X j;i;G ;
where CR is known i.e. crossover rate (another DE parameter).
jrand is randomly chosen index from 1; 2; ; D. U j;i;G is the trial
vector which can be yield by combination of V j;i;G and X j;i;G which
are donor and target vectors, respectively.
In DE algorithm the non-physical values of determined parameters is the major problem. To resolve this drawback, a penalty
function has been dened [59] in (91) which guarantees all the
parameters are within the range.
(
U i;G 1 rand 0; 1X iH X iL if U i;G 1 4 X iH
U j;i;G
91
U i;G 1 rand 0; 1X iH X iL if U i;G 1 o X iL
Fourthly, the population may achieve better values or may keep
unchanged in terms of the tness status. The objective function ( J)
determines that the new vector (in the new generation (G G 1))
should be kept at its previous value or updated to a new trial
vector (U i;G ) as:
(
U i;G if JU i;G o JX i;G
92
X i;G 1
X i;G otherwise
dI
I mp
J
dV V mp ;Imp V mp
93
151
q V m;ref V oc;ref
1
I
N s kB T ref
ln 1 m;ref
97
I sc;ref
At this stage, the model is prepared and thus the actual data i.e.
solar irradiation, cell temperature, and datasheet values are
required to calculate all parameters. The proposed model has been
validated using a reference model obtained by numerically solving
the aforementioned equations for three key points i.e. I sc , V oc , and
MPP. To solve the reference model, the values of series and shunt
resistances and ideality factor for different types of PV arrays have
been extracted as well. The results through iterative methods
compared to those found through this approach indicate accuracy
of this model. This method is useful for engineers since it provides
them with accurate PV array model which is easy to implement in
the software while no need to use any iterative technique.
Sandrolini et al. [61] have proposed a numerical method to
estimate parameters of double-diode model of solar PV cell (or
module). Particle Swarm Optimization (PSO) has been utilized in
order to t the numerically calculated IV curve with that one
obtained experimentally. Since the behavior of optimization
techniques is usually stochastic, the cluster analysis has also been
conducted to accurately approximate PV module parameters.
There are seven parameters in double-diode model and each can
152
is also useful to monitor PV cell degrading effect resulted by prolonged light exposure.
El Shahat [63] proposed a modeling approach using articial
neural network (ANN). This method has been evaluated for Schott
ASE-300-DGF PV panel. Matlab environment has been utilized to
mathematically implement the model. The mathematical circuit
based model of the PV cell and module have been derived based
on conventional topologies i.e. single-diode and double-diode.
In this method, the behavior of PV module equivalent circuit is
closely matched with the real one. IV curves at different levels of
temperature and irradiance have been plotted with a very good
accuracy compared to real PV panel. As shown in Figs. 30 and 31,
output voltage, current, and power of PV module have been
plotted for different irradiation and temperature levels. The relationships between plotted 3-dimensional surfaces have been taken
into account as the training or learning data and desired target for
the general neural network simulation. ANN characteristic makes
it possible to interpolate between the points and draw all derived
mathematical equations as the mapping face or surface. As illustrated in Fig. 32, the proposed ranges of irradiance and temperature as well as corresponding values of voltage, current, and
power have been considered as model inputs and outputs for the
ANN algorithm, respectively. Neural network algorithm uses the
back propagation (BP) learning technique because this approach
makes it possible to estimate values in between learning values.
BP technique is also useful where the interpolation between the
learning curve data is required.
A modeling approach that exploits genetic optimization algorithm has been introduced by Ismail et al. [64]. This method is able
to calculate seven parameters correspond to PV cell double-diode
equivalent circuit. The performance of PV system under shading
condition has also been studied in this paper. Parameters of solar
cell can be optimized globally and obtained over a vast range of
irradiation and operating temperature using this approach. Manufacturer datasheet information has been utilized together with
average error tness function to create the objective function and
implement the optimization algorithm. Seven parameters (i.e.
photon current, rst and second diodes reverse saturation currents, diode ideality factors, and series as well as parallel resistances) are needed to calculate the solar cell output voltage and
153
Fig. 35. The distinct regions on IV characteristic of organic solar cell for parameter
extraction [69].
p
X
abs I j curve I j V j ; Gj ; T j ; DV =p
99
j1
100
DV I ph ; I 01 ; I 02 ; a1 ; a2 ; RS ; RP
where I ph is photon current, I 01 , I 01 , a1 , a2 are rst and second
diodes reverse saturation currents and ideality factors, RS and RP
are series and parallel resistances in double-diode equivalent circuit, respectively. To calculate the solar cell output current (85)
and (86) have been utilized taking into account that PV current is a
function of voltage current which is I pv f I pv ; V pv . Newton
Raphson method has been chosen as the iterative numerical
method in order to solve this equation (see Fig. 33) as:
0
1
h I pv ; V pv
@
A
I pvn 1 I pvn
101
dhI pv ;V pv
dIpv
at I pv I pvn
where h I pv ; V pv I pv f I pv ; V pv 0, I pvn is the present value
of current, and I pvn 1 is the next value of current. PV cell output
current can be obtained through iteration in such a way that the
error between the current value and previous value becomes less
than the certain tolerance.
The PV cell single-diode and double-diode models have been
implemented to validate accuracy of this technique. This method
has been simulated in Matlab/Simulink and merged with EFB
method. To verify the efcacy of the proposed method, the results
obtained through the simulation have been compared to datasheet
values and hence it conrms an acceptable level of accuracy.
Elshatter et al. [65,66] developed a PV cell model using fuzzy
based regression. They used single-diode equivalent circuit of solar
cell. Experimental data associated with three key points (i.e. shortcircuit, open-circuit, and MPP) on IV curve has been utilized
together with dynamic series and shunt resistances to obtain the
ve parameters. Panel surface tmeperature, solar irradiation, panel
102
103
t
106
and,
max
Ah h ;ch L
jc
ct jxi j
107
where i 1; ; N;
Y i A1 xi1 An xin D Y i
108
W-function STFT
Accuracy (%)
(W-function)
Accuracy
(%) (STFT)
Voc (V)
Isc (A)
Rso()
Rsho ()
Vmp (V)
Imp (A)
FF
T (K)
0.52093
0.55931
0.16121
25.896
0.38473
0.48335
0.63824
0.585
0.301
0.487
0.015
1.35
0.488
0.037
0.209
0.301
0.320
0.513
1.035
0.486
0.057
0.524
0.561
0.162
25.9
0.390
0.481
0.638
307
0.52248
0.55931
0.16148
25.767
0.38596
0.48334
0.63837
154
109
T F round 1 rand0; 1
110
ia j
111
X new X i r X j X i ; If f X i o f X j ;
i a j
112
where I exp V k is the value of current (I) obtained experimentally at volatge V k . I cal V k ; X is the value of current calculated
through the IV sigle-diode equation. p is the total number of
voltage steps on IV curve for a given set of parameters (i:e: X i
I oi ; I phi ; ni ; Rsi ; and Rshi ) at volatge V k . The objective is to minimize
the tness function in order to make the measured and calculated
values as close as possible to each other. In this paper, the set of
solar cell parameters have been considered as a learner X i . An
individual parameter of PV cell has been dened as a subject.The
teacher and learner phases modify the value of parameters and the
tness function by continous evolation of TLBO algorithm. To run
the TLBO algorithm, three parameters should be known in advance
i.e. population size (i.e. classroom strength), search space (i.e.
range of random numbers for each parameter), and number of
iterations. Using TLBO algorithm proposed in this paper, ve
parameters of silicon solar cell, Dye-sensitized solar cell (DSSC),
and a silicon solar module have been extracted accurately compared to experimental values. The results show that TLBO is a very
benecial and effective tool in order to estimate the ve parameters of a PV cell.
In another work, Moldovan et al. [69] suggeted genetic algorithm (GA) in order to approximate the parameters of a solar cell
IV equation. In this case, the Lambert function has been exploited
to reperesent the PV cell mathematical description. The solar cell
model proposed in this paper consists of four parameters associated with lumped equivalent circuit. Taking into account the
single-diode model of a PV solar cell, IV equation can be simply
sovled in terms of Lambert W function [7075] given by:
"
!#
Rp I ph Rs I o Rs V
V I ph I o Rp
I o Rs Rp
nV th
exp
I
W
Rs
Rs Rp
nV th Rs Rp
nV th Rs Rp
114
and,
Rp I ph I o I
I o Rp
exp
V I ph I o I Rp IRs nV th W
nV th
nV th
115
116
155
Table 4
Comparison between parameters obtained through iterative method and analytical
expression for two types of solar cell [82].
Experimental data, Unit
Blue cell
Grey cell
Voc, V
Isc, A
V m, V
Im, A
Rso ,
Rsho,
T, K
Results
0.536
0.1023
0.437
0.0925
0.45
1000
300
Iterative
Analytical
0.524
0.561
0.390
0.481
0.162
25.9
307
Iterative
Analytical
Iph, A
n
I S ; A
Rs ,
Rsh ,
0.1023
1.5017
0.1034
68.51
1003.1
0.1023
1.5019
0.1036
68.26
1000
0.5627
1.7168
5.326
78.52
26.03
0.5610
1.7225
5.514
77.69
25.9
x1 ; x2 ; ; xn U x1 ; x2 ; ; xn exp x1 ; x2 ; ; xn ; U x1 ; x2 ; ; xn A R
118
STFT yeilds an explicit expression for PV cell current in terms of
its terminal voltage based on single-diode IV equation as:
1
!0
V
nV th 1 RRshs
Rsh I ph I 0
@
trans D 1A
119
I
1 RRshs
Rs I 0 I ph RVsh
or
I
!
I ph I 0 RVsh
1 RRshs
!!
Px
Dm x mm
nV th
0
m!
D Px m
1 Dm x 1 mm
Rs
m0
120
m!
where
!!
Px
Dm x mm
0
m!
trans D Z lim D Px m
m
m
1 D x 1 m
x-1
m0
121
m!
and,
1
0
Rs I 0 I ph RV
sh
A
I 0 Rs exp nVVth exp@
nV th 1 RRs
nV th 1 RRshs
sh
122
123
Rs
Rs 1 trans D
V
Rsh 1 Rsh
Rs 1 Rsh
where
1
I
Rso
V V V oc
124
I0
1
I
Rsho
V V 0
125
I I sc
th trans D
Rs 1 trans D
V
Rs
1 RRs
Rs 1
sh
Rsh
127
The optimum value of V mp is obtained by solving (127) and
taking into account (126). Once V mp is claculated I mp is optimally
computed using (120). The ll factor, that denes the degree of IV
curve squarness, can be calculated through:
FF
V mp I mp
V oc I sc
128
To validate the accuracy of STFT method, the solar cell parameters of three types i.e. Grey, Blue, and Plastic solar cells have
been extracted using different methods [75,81,82] and the results
compared to STFT. It has been proved that STFT approach is more
accurate than Lambert W-function method and needs a very
shorter run-time (see Table 3).
Laudani et al. [83,84] presented a method to extract ve
parameters of the single-diode model through the PV panel
experimental IV curve. Two reduced forms have been introduced
through which the ve parameters of the model have been divided
into two groups i.e. independent and dependent unknowns. The
rst reduced form is useful in order to extract parameters from
datasheet information [83]. The second reduced form, proposed in
[84], is useful to identify ve parameters from the operating
156
Start
New
Rs
Newton-Raphson or
Bisection method
New
Rs
dP/ dV@MPP = 0 ?
NO
YES
NO
dI/dV@Isc = -1/Rsh ?
YES
End
Fig. 38. Algorithm to determine the solar panel parameters [34].
129
It is possible to nd the single-diode equivalent circuit parameters (i.e. RS , Rsh , I S , and n) from the values available in datasheet
Datasheet values
a1
I SC
V oc
a2
V mpp
a3
a4
I mpp
a5
nS
Unknown parameters
I ph
x1
I0
x2
Vt
x3
RS
x4
Rsh
x5
Rsho
x6
Output quantities of the PV source
I
y1
V
y2
P
y3
exp
0
130
nV T
nV T
Rsh
Rsh
1
IS
V oc
exp
1 0
Rsh nV T
nV T
RSO RS
Short-circuit current
Open-circuit voltage
Voltage at MPP
Current at MPP
Number of cells in series in a module
Photo-generated current
Dark saturation current
Junction voltage
Series resistance
Parallel resistance
Effective resistance at short-circuit
Output current
Output voltage
Output power
131
1
1
IS
I SC RS
exp
0
Rsh Rsho RS nV T
nV T
132
V oc V oc V m
RS
V m RS I m
1
0
I m I S exp
I S exp
nV T
Rsh
Rsh
nV T
133
The term
exp I SC RS =nV T can be ignored since is much less than
I S exp
I SC RS =nV T ;
1 RS =Rsh can be
as 1 since RS {Rsh ;
written
The term I S =nV T exp V oc =nV T is much greater than 1=Rsh ;
The term I S =nV T exp ISC RS =nV T is much less than other terms
and can be neglected.
and thus (130) through (133) can be re-written as:
V oc
V oc
I S exp
0
I SC
nV T
Rsh
IS
V oc
1 0
exp
nV T
nV T
134
RSO RS
135
Rsh Rsho
136
V oc V oc V m
V m RS I m
I m I S exp
0
I S exp
nV T
Rsh
nV T
137
V m RSO I m V oc
m
V T ln I SC RVsho
I m ln I SC VRshoc I
V oc
V oc
I S I SC
exp
Rsh
nV T
138
Im
SC V oc =Rsho
139
nV T
V oc
exp
IS
nV T
140
RS
I SC RS
I ph I SC 1
1
I S exp
Rsh
nV T
141
RS RSO
Table 5
List of transformed variables [95].
157
158
Fig. 39. The series combination of solar modules can be lumped as a single-diode model [95].
V oc
V m I m RS
V oc
V m I m RS
I s1 exp
I s2 exp
exp
exp
VT
VT
2V T
2V T
V oc V m
I m 0
Rsh
Table 6
Datasheet values of an array in relation to a module
[95].
Module datasheet values Equivalent array values
ISC N pp
V OC N ss
V mpp N ss
Impp N pp
ns N ss
I SC
V OC
V mpp
I mpp
nS
Rsh Rsho
exp
exp
VT
VT
2V T
2V T
Rsh
142
If the assumed double-diode IV equation is differentiated
in terms of I (at the open-circuit and short-circuit points) the term
dV=dI at oc RSO and dV=dI at SC Rsho , respectively, and
hence it yields:
I s1
V oc I s2
V oc
1
RSO RS
exp
exp
1 0
143
VT
V T 2V T
2V T Rsh
I s1
I SC RS I s2
I SC RS 1
exp
exp
1 0
VT
VT
2V T
2V T Rsh
Rsho RS
144
RS
V oc
V m I m RS
V oc
V m I m RS
Im 1
exp
exp
I s1 exp
I s2 exp
Rsh
VT
VT
2V T
2V T
V oc V m
Rsh
145
SC
s1
SC
s2
SC
sho
I SC 0
146
VT
2V T
Rsh
RSO RS
I s1
V oc I s2
V oc
exp
exp
1 0
VT
V T 2V T
2V T
147
148
149
exp V oc =2V T
I s2 I SC
Rsho RSO RS
Rsh
1
I s1
I SC RS I s2
I SC RS
exp
exp
Rsho RS V T
VT
2V T
2V T
151
1
V oc
V oc
V oc
1 I s2 exp
1
I ph I s1 exp
VT
2V T
Rsh
152
153
154
vmpp impp RS
I mpp RS
I mpp I ph I 0 exp
nS V t
Rsh
155
V oc
V oc
0
I oc I ph I 0 exp
nS V t
Rsh
156
159
V mpp
I SC Rsh V oc I SC RS exp
V mpp I mpp RS V oc
nS V t
nS V t Rsh
I SC Rsh V oc I SC RS exp
R1sh
V mpp I mpp RS V oc
nS V t
nS V t Rsh
157
RRshS
R V oc
I SC Rsh V oc I SC RS exp SC nS V
S t
R1sh
dI
1
nS V t Rsh
I SC RS V oc
V
0
dV
Rsho
I SC Rsh V oc I SC RS exp n V
S t
I I sc
1
RRshS
nS V t Rsh
158
V oc T V oc T
nS V t
Rsh
V oc T V oc kv T T stc
and,
V oc T I SC T RS
V oc T
exp
I 0 T I SC T
nS V t
Rsh
k
I SC T I SC 1 i T T stc
100
I mpp
where
159
160
161
162
160
where
B a1 U x5 a2 a1 Ux4 =a5 U x3 U x5 ; D a3 a4 U x4 a2 =a5 U x3 ; and
E a1 Ux4 a2 =a5 Ux3
to (154) through (156) in [34]) from the basic mathematical relationship between I pv and V pv assuming the term 1 being
neglected. To represent the mathematical equation systematically
variables mentioned in [34] have been transformed as cited in
Table 5.
Thus, taking into account that,
dP
0:
163
dV V V mpp
I I mpp
dI
1
:
dV V 0
Rsho
164
a3 G; T a2 G; T a4 G; T U x4 a5 x3 U U
I I sc
and using the transformation Table 5, PV module output current can be obtained as:
y y1 U x4
y y1 Ux4
y1 x1 x2 exp 2
165
2
a5 U x3
x5
By rearranging (156) and using Table 5 photocurrent can be
rewritten as:
a2
a2
x1 x2 exp
166
a5 U x3
x5
By substitution of x1 into (154) and (165), y1 and a1 have been
obtained by:
a2
y y1 U x4
a2 y2 y1 Ux4
y1 x2 exp
167
exp 2
a5 U x3
a5 U x3
x5
a2
a2 a1 Ux4
a1 x2 exp
a5 Ux3
x5
where
a1 G; T a4 G; T U x4 x5 a3 G; T
U ln
a1 G; T U x4 x3 a2 G; T
Similarly, (171) can be written as:
a3 U Q G; T =a5 U x3 Ux5 a3 =x5
a4 G; T
1 Q G; T Ux4 =a5 U x3 U x5 x4 =x5
Q G; T a1 G; T U x4 x5 a2 G; T U exp
a3 G; T a4 G; T U x4 a2 G; T
a5 x 3
168
171
1
BexpfEg 1=x5
x5 1 B U x4 expfEg x4 =x5
172
174
where
a4
173
I sc I sc;r cT T T r
I sat I sat;r
G
Gr
and
3
T
qEg 1 1
exp
Tr
k T r T
161
176
177
and,
g I; V is the characteristic equation of an electrical device (such
as PV cell, by pass and blocking diodes). is diode ideality factor
and is avalanche breakdown (a phenomenon which occurs at a
region of high negative voltage) exponent. I sat and I sat;r are the
diode saturation currents in operating and STC conditions,
respectively. T r and Gr are reference cell temperature (in K) and
irradiance in STC conditions, respectively. V br is the breakdown
voltage (in V). This method is supposed to map V to I and vice
versa. To avoid hot spots and power loss, bypass diode is exploited
in a PV array. Another protective diode utilized in a PV array circutry is blocking diode. It prevents the current to reversely ow
through a string of PV modules. The equation that represets the
operation of these two diodes is given by:
qV
1
178
0 I I sat;d exp
d kT
where I sat;d is saturation current of blocking or bypass diode (in
A) and d is the ideality factor of blocking or bypass diode.
x x1 ; x2 ; ; x2n 1 ; x2n T I 1 ; V 1 ; ; I n ; V n T
179
180
where f x is a vector that includes in n arrays which are element laws and the others are interconnection laws. Eq. (180) can
be solved by numerical or analytical techniques (numerical is more
practical) which nally results in the string current. The damped
Newton approach is robust version of NewtonRaphson method
and has been used to nd roots of (180) in here. To model the
whole system equations numerically, several steps have been
dened as follows:
181
where
xk is gradient of xk . The nested loop is run iteratively
until f xk o .
162
q A 0; 1;
tolerance ;
A vector at current xk which is p J xk 1 f xk ;
yj xk and j k for j 1 where j determines j-th iteration of
inner loop.
After this stage, yj and j are updated in inner loop as follows:
a. yj 1 yj j p is updated at j-th iteration;
b. Let j , y yj and return to outer loop if f yj 1 o
1 qj f yj or yj 1 yj o , otherwise, update j 1
Tn
T
3
exp
qEg 1 1
ak T n T
182
I SC;n
exp V oc;n =aV t;n 1
183
184
I sc;n K I T
exp V oc;n K V T =aV t 1
185
where
K I and K V are the current and voltage coefcients, respectively.
The reason for this modication is to match the open-circuit voltages of the model with the experimental data over a broad range
of temperature. Since the saturation current highly depends on the
variation of temperature, (185) offers a different approach to
describe this dependency. The variation of V oc has been liberalized
by adding the term including K V coefcient. This equation makes it
easy to model the system and cancel the error at any regions of I
V curve.
To obtain Rs and Rp and hence adjust the IV curve, it has been
assumed that there is only one pair of (Rs , Rp ) at (V mp , I mp ). In this
case, the maximum power calculated through mathematical
model is equal to the maximum power obtained through the
experiment as:
P max;m P max;e V mp I mp
186
solved numerically for I A 0; I sc;n and V A 0; V oc;n . There is no
direct solution for single-diode IV equation since it is a
Rp Rs
I sc;n
Rp
190
V mp
V oc;n V mp
I sc;n I mp
I mp
V 0
I I sc;ref
I 0;ref =nT ref eIsc;ref Rs =nT ref 1=Rsh
1
Rsho
1 Rs I 0;ref =nT ref eIsc;ref Rs =nT ref 1=Rsh
195
189
dI
dV
191
G V KI T T ref IRS
192
Rsh
where G is the ratio between actual solar radiation (G) and the
irradiance in STC (Gref ). K is thermal correction factor (in /C). I is
the current generated by the PV panel in ampere. I L is photocurrent (in A) given by:
I L T I L;ref I;sc T T ref
193
where I L;ref is the photocurrent at STC. At each temperature and
irradiance RS , Rsh , and n have been assumed to be constant values.
In STC, (192) is similar to the conventional ve-parameter equation since G 1 and T T ref .
To estimate the parameters of the model, Rsho and Rso should be
rstly determined. Rsho and Rso are the IV curve reciprocal of
slopes at STC that correspond to the short-circuit and open-circuit
points, respectively. In addition, there should be a prior knowledge
about the V oc;ref ; I sc;ref ; I mp;ref , and V mp;ref in order to obtain their
values at STC. Open-circuit voltage at standard temperature and at
minimum possible irradiance (usually 2 W/m2) and T T ref are
required to be specied as well. To nd K, the values of V mp and I mp
at 75 C and 1 kW/m2 have suggested to be used in this work.
According to this information which can be extracted from the
manufacturers datasheet, ve-parameter equation has been
evaluated in ve points i.e. short-circuit point, derivative at the
short-circuit point, open-circuit point, derivative at open-circuit
point, and maximum power point as:
I
sc;ref Rs
I sc;ref I L;ref I 0;ref eIsc;ref Rs =nT ref 1
194
Rsh
163
V
oc;ref
0 I L;ref I 0;ref eV oc;ref =nT ref 1
Rsh
196
I 0;ref =nT ref eV oc;ref =nT ref 1=Rsh
dI
1
dV V V oc;ref
Rso
1 Rs I 0;ref =nT ref eV oc;ref =nT ref 1=Rsh
I 0
197
V
mp;ref I mp;ref Rs
I mp;ref I L;ref I 0;ref eV mp;ref Imp;ref Rs =nT ref 1
Rsh
198
A trial and error approach has been utilized to solve these
equations and hence to extract PV cell equivalent circuit parameters. In this approach, there is no need to exploit any special
equation solver that starts searching based on tted initial parametric values. The algorithm includes two nested process in order
to estimate Rs and n. To initiate the algorithm, it has been
recommended to consider I L;ref I sc;ref and Rsh Rsho . Under a
broad range of operating conditions (195) and (196) can satisfy
I
eIsc;ref Rs =nT ref {R1sh .
Rs {Rsho and nT0;ref
ref
Once the abovementioned procedures are completed and some
rst values for Rs , and n are estimated, I 0;ref , I L;ref , and Rsh can be
obtained through (198), (194), and (195), respectively. Then,
through (196) ideality factor can be calculated and compared to
the rst trial value. If any change is required to achieve more
accurate IV curve, n is updated. After this stage, Rs is computed by
(197) and compared to the rst value of Rs . The second trial and
error procedure is run based on the rst stage results. Rs is
changed and the rst trial and error process is run again to nd the
new value of n and hence Rs is updated. This algorithm keeps on
until the results are converged. In this case, system of equations is
solved based on actual values (and not approximation) because
there has not been applied any simplication.
The system of equations has been coded into a simple software
routine (e.g. VBA macros in Microsoft Excel) in order to nd the
solution with the desirable accuracy. Since any changes in environmental conditions affect the output current of PV cell, estimating I PV is not a straightforward task. However, this method
makes it easy to estimate I PV where Rs , Rsh , and I 0 are supposed to
vary along with changes in solar irradiation as:
Rs G
Rs
Rsh G
Rsh
199
200
202
164
206
207
Fig. 45. Current vs. voltage for the poly-crystalline cell type predicted by the veparameter model and King's model measured by NIST for four operating conditions
and STC [33].
Table 7
Maximum power values obtained for the single-crystalline cell type through NIST
measurements, the King, and ve-parameter models [33].
Solar [W/m2]
1000.0
882.6
696.0
465.7
189.8
Temperature [C]
25.0
39.5
47.0
32.2
36.5
King
Five-parameter [33]
133.4
109.5
80.1
62.7
23.8
133.4
111.4
82.0
61.1
22.5
133.4
110.6
82.4
61.0
22.3
204
A NCS NS
T C;REF
3
qG
1
I
exp
T C;REF T C
kA
209
TC
205
q
T C;REF
I 0;REF
I SC;REF
AkT C;REF
211
As shown in Fig. 44, the measured value of voc has been
compared to its analytical value and hence RS updated until the
empirical and analytical values closely match together.
The parameters of a single PV module have been approximated
in this stage. To extract the IV characteristic of whole PV array
(plant), the parameters should be scaled up based on the series
and parallel connections between the PV modules. In this paper, to
study the effect of cell temperature on the amount of generating
power, module temperature has been formulated as:
T module 3 C 0:943T ambient 0:028G 1:528V wind 4:3
212
h
i
RS
I MP I L I 0 ln IL I0IMP 1 kqI TMPC;REF
S
1 I L I MP I 0 kqR
T C;REF
214
Table 8
Comparison between solar PV cell/module/array modeling methods.
No. Author(s)
Equation based
EFBs
PLC
Analytical Numerical
Nishioka et al.
[20]
N/A*
N/A
Tian et al.
[21]
N/A
N/A
N/A
3
4
5
Chowdhury et al.
Mahmoud et al.
Gow et al.
[22]
[23]
[26]
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Gow et al.
[27]
N/A
N/A
N/A
Veerachary
[30]
N/A
N/A
N/A
8
9
Chouder et al.
Sera et al.
[31]
[34]
N/A
N/A
N/A
N/A
N/A
N/A
10
Gil-Arias et al.
[35]
N/A
N/A
N/A
11
Weidong et al.
[36]
N/A
N/A
N/A
12
13
14
[37]
[38]
[39]
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
15
Huan-Liang et al.
Huan-Liang
Yun-Feng and
Ying
Altas and Sharaf
[40]
N/A
N/A
N/A
16
Rahman et al.
[41]
N/A
N/A
N/A
17
Tossa et al.
[42]
N/A
N/A
N/A
18
[43]
N/A
N/A
19
Campbell
[44]
N/A
N/A
N/A
20
21
Bishop
Quaschning and
Hanitsch
Kawamura et al.
Kaushika and
Gautam
[48]
[51]
N/A
N/A
N/A
N/A
N/A
N/A
[52]
[53]
N/A
N/A
N/A
N/A
N/A
N/A
22
23
Di Piazza et al.
[54]
N/A
N/A
25
Chan et al.
[55]
N/A
N/A
N/A
26
Ishaque et al.
[56]
N/A
N/A
N/A
Number of
parameters
Complexity of
implementation
Computational
burden
Accuracy Implementation
platform
N/A
PSCAD/EMTDC
Matlab/Simulink
Matlab/Simulink
Matlab/Simulink
SABER
SPICE
PSPICE
SABER
PSIM
any simulator
Matlab/Simulink
Matlab
Empirical Equations
Nonlinear Solver
LevenbergMaquardt, NewtonRaphson
LevenbergMaquardt, NewtonRaphson
Taylor Expansion
2
1
2
6
3
5
L
L
L
L
L
L
L
L
L
NewtonRaphson
Any Numerical Solver (e.g.
NewtonRaphson)
Fixed point Theorem, Linear
regression
1
1
5
5
L
H
L
H
L
H
N/A
SABER
PSPICE
Matlab/Simulink
Matlab/Simulink
1
1
1
3
3
4
L
L
L
L
L
L
L
L
L
Matlab/Simulink
Matlab/Simulink
Matlab/Simulink
Matlab/Simulink
PSCAD/EMTDC
Matlab/Simulink
Matlab/Simulink
5
7
H
H
H
H
H
H
1
1
5
4
H
H
H
H
H
H
GNG-based simulator
DSPACE
Numerical algorithm
and source codes
Matlab/Simulink
Simplied Empirical
Equations
Non-iterative solution
LevenbergMaquardt algorithm (LMA)
EFBs, Equal area criterion,
Piecewise Linear Circuit (PLC)
NewtonRaphson
Computational network
analysis
Junction Analysis
Growing Neural Gas (GNG)
Network, Least Square
Regression (LSR), Real-time
Simulator
Analytical 5-point, Curve tting, iterative 5-point, LSR
PSIM
Electromagnetic transient program (EMTP)
Matlab/Simulink
PSCAD/EMTDC
PVNet
Numerical algorithm
and source codes
N/A
Numerical algorithm
and source codes
165
24
Number of
Diodes
Supplementary method(s)
166
Table 8 (continued )
No. Author(s)
Equation based
EFBs
Analytical Numerical
PLC
Ishaque et al.
[57]
N/A
N/A
N/A
28
[58]
N/A
N/A
N/A
29
Ishaque and
Salam
Ishaque et al.
[59]
N/A
N/A
N/A
30
Saloux et al.
[60]
N/A
N/A
N/A
31
Sandrolini et al.
[61]
N/A
N/A
N/A
32
N/A
N/A
N/A
33
El Shahat
[63]
N/A
N/A
N/A
34
Ismail et al.
[64]
N/A
N/A
N/A
35
Elhagry et al.
[65]
N/A
N/A
N/A
36
Elshatter et al.
[66]
N/A
N/A
N/A
37
Patel et al.
[67]
N/A
N/A
N/A
38
Moldovan et al.
[69]
N/A
N/A
N/A
39
40
[74]
[76]
N/A
N/A
N/A
N/A
N/A
N/A
41
[77]
N/A
N/A
N/A
42
Singh et al.
[78]
N/A
N/A
N/A
43
Charles et al.
[81]
N/A
N/A
N/A
44
Phang et al.
[82]
N/A
N/A
N/A
45
46
47
Laudani et al.
Laudani et al.
Laudani et al.
[83]
[84]
[85]
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
48
Laudani et al.
[86]
N/A
N/A
N/A
49
Lun et al.
[87]
N/A
N/A
N/A
Number of
Diodes
Number of
parameters
Complexity of
implementation
Computational
burden
Accuracy Implementation
platform
Dif-
Matlab/Simulink
Dif-
Dif-
Programming and
source codes
Matlab/Simulink
PSIM
PSCAD/EMTDC
PSPICE
Programming and
source codes
LabView
PSPICE
Matlab
1 and 2
5 and 7
Matlab/Simulink
Matlab
Matlab
LabView
Programming and
source codes
1
1
5
5
H
H
H
H
H
H
N/A
Matlab
Programming and
source codes
Maple enviroment
1
1
1
5
5
5
H
H
H
H
H
H
H
H
H
Programming and
source codes
Programming and
source codes
Matlab
Matlab
Matlab
EFBs, NewtonRaphson,
ferential Evolution (DE)
EFBs, NewtonRaphson,
ferential Evolution (DE)
EFBs, NewtonRaphson,
ferential Evolution (DE)
EFBs, NewtonRaphson,
ferential Evolution (DE)
Dif-
Matlab
Mathematica
Maple
Mathcad
Matlab/Simulink
27
Supplementary method(s)
Chikh et al.
[88]
N/A
N/A
N/A
51
Khanna et al.
[89]
N/A
N/A
N/A
52
Dizqah et al.
[90]
N/A
N/A
N/A
53
Oliva et al.
[91]
N/A
N/A
N/A
54
Fathy
[92]
N/A
N/A
N/A
55
[94]
N/A
N/A
N/A
56
Chatterjee et al.
[95]
N/A
N/A
N/A
57
58
Liu et al.
Liu and Nguang
[96]
[97]
N/A
N/A
N/A
N/A
N/A
N/A
59
Villalva et al.
[24]
N/A
N/A
N/A
60
Villalva et al.
[98]
N/A
N/A
N/A
61
Lo Brano et al.
[99]
N/A
N/A
N/A
62
de Blas et al.
[100]
N/A
N/A
N/A
63
[101]
N/A
N/A
N/A
64
Chenni et al.
[102]
N/A
N/A
N/A
65
De Soto
[32]
N/A
N/A
N/A
66
De Soto et al.
[33]
N/A
N/A
N/A
67
Ma et al.
[109]
N/A
N/A
N/A
68
Ma et al.
[110]
N/A
N/A
N/A
69
Lun et al.
[111]
N/A
N/A
N/A
70
Ghani et al.
[112]
N/A
N/A
N/A
71
Ghani et al.
[113]
N/A
N/A
N/A
72
Ghani et al.
[114]
N/A
N/A
N/A
73
Hejri et al.
[115]
N/A
N/A
N/A
Programming and
source codes
Matlab
Matlab
1 and 2
5 and 7
Programming and
source codes
Matlab/Simulink
5
5
H
H
H
H
H
H
N/A
N/A
Matlab
Matlab/Simulink
Matlab
Matlab or similar
environment
Matlab or similar
environmen
Matlab, Maple,
Mathematica
Programming and computer simulation
Matlab
Programming and
source codes e.g. in
Matlab
PSPICE OR any circuit
simulator
Matlab/Simulink
PSIM
Visual Basic Macro In
Excel
Matlab
Mathematica
Programming and
source codes
Numerical algorithm
and source codes
Programming and computer simulation
167
LevenbergMaquardt (LM) or
any iterative numerical slover
Analytical 5-point, Curve tting, iterative 5-point, LSR
Iterative Search Method
(Bisection Approach)
NewtonRaphson
Engineering Equation Solver
(EES)
Engineering Equation Solver
(EES)
LevenbergMaquardt (LM)
and GaussNewton
algorithms
LevenbergMaquardt (LM)
and GaussNewton
algorithms
Lambert W-function
(EDDMMLW)
Lambert W-function
NewtonRaphson
Lambert W-function
NewtonRaphson
Lambert W-function
NewtonRaphson
Numerical analysis
NewtonRaphson
LevenbergMarquardt
optimization
Programming and
source codes
Matlab
50
Matlab/Simulink
Matlab, Mathematica
H
H
Matlab
H
H
H
h V IRs
i V IR
s
I IL I0 e a 1
Rsh
215
Number of
parameters
216
5
5
2
1
and nI is the ideality factor. Eq. (215) at three key points (shortcircuit point, open-circuit point, and MPP) has been evaluated as:
Isc;ref Rs;ref
I sc;ref Rs;ref
217
I sc U ref I L;ref I 0;ref e aref 1
Rsh
V oc;ref
V oc;ref
0 I L;ref I 0;ref e aref 1
Rsh
218
219
I
dV mp 1 I0 Rs e mp a mp Rs Rs
N/A
N/A
N/A
Lambert W-function
Numerical method
NewtonRaphson
NewtonRaphson Runge
Kutta Merson
Iterative matching algorithm
Algebraic equations and error
minimization algorithm
N/A
Analytical Numerical
Equation based
Number of
Diodes
Supplementary method(s)
221
Rsh
Not applicable.
N/A
N/A
N/A
N/A
[118]
[119]
76
77
N/A
N/A
[117]
75
Elbaset et al.
N/A
N/A
[116]
74
Peng et al.
PLC
EFBs
Circuitry based
Table 8 (continued )
Three types of solar panel (m-Si, C-Si, and CIS), made by famous
manufacturers, have been examined to validate this method. The
real information in manufacturers datasheet, for these PV panels,
has been compared to those obtained through the simulation. For
the CIS thin lm, the average relative error on peak-power voltage
has been 0.67% and the average relative error on peak power has
been 0.19%. In the case of Mono-crystalline solar module, the
average relative error has been less than the former type for both
peak-power voltage and peak power about 0.32% and 0.03%,
respectively. These values for Multi-crystalline silicon have been
0.22% on peak-power voltage and 0.134% on peak power. The
results conrm that this method is adequately accurate because it
declines the computational burden associated with the nonlinear
equations and analytical methods.
De Soto et al. [33] introduced a PV cell model in order to estimate the IV curve. This model relies on ve-parameters, cell
temperature, solar irradiation, and semi-experimental equations.
The ve-parameter model is quite user-friendly since it only needs
limited data as inputs and thus provides a valuable tool for energy
forecasting. The ve-parameter characteristic equation of PV cell
single-diode model used in this work written as:
H
H
Matlab/Simulink
H
H
H
Complexity of
implementation
Accuracy Implementation
platform
Computational
burden
168
aref T c;ref
223
exp
224
k T T ref T T c
I 0;ref
T c;ref
where Eg;T ref 1:121 eV for silicon cells and Eg;T ref 1:6 eV for
triple junction amorphous cell and hence the value of band gap
energy at any given cell temperature has been calculated by:
Eg;T c
1 0:0002677 T c T c;ref
Eg;T ref
225
S
M
U
I
Isc T c T c;ref
Sref M ref L;ref
226
ai AM i
M ref
0
227
1
1:634
cos Z 0:5057 96:080 Z
228
b Rbeam K ;b d K ;d
K ;g
2
2
Sref Gref
Gref
Gref
229
where Gref is solar radiation level at STC (1000 W=m2 ), Gb is
the solar irradiation received from the sun provided that it is not
scattered by the atmosphere, and Gd is diffuse irradiation which
has been calculated by:
Gb G Gd
230
Rsh;ref
S
231
V I R
V mp
1 Rs I0 Rs exp mp mp s
Rsh
V mp I mp Rs
V mp I mp Rs
1
I mp I L I 0 exp
a
Rsh
233
Using the suggested model in [33], a building integrated photovoltaic (BIPV) facility has been evaluated at the National Institute
of Standards and Technology (NIST) for four PV cell technologies
i.e. single crystalline, polycrystalline, silicon thin lm, and triple-
169
170
G
I pv I sc K I T
GSTC
235
236
I 01
exp V oc K v T q=N s KTA1 1
I 02
!
2
T5
I 01
3:77
step. In this case, the diode ideality factor has been used as the
tting parameter. In the fourth step, to obtain the band gap energy
and temperature coefcient of the photo-generating current, two
additional equations has been derived using thermal coefcients of
open-circuit voltage and short-circuit current. By dening an
independent parameter (i.e. ideality factor), the system of equations
can be solved by numerical technique. In this method, to extract the
required parameters, minimal set of experimental data is required.
Several PV panels from different manufacturers have been analyzed
to verify the accuracy of this approach and the results indicate a
satisfactory level of precision.
237
4. Conclusion
This paper presents a comprehensive review on mathematical
modeling methods of photovoltaic (PV) solar cell/module/array. A
new classication on these modeling techniques is presented in
this article. These approaches are classied in two main groups,
namely, circuitry based techniques and equation based methods.
Each group has two sub-classes. The rst class of modeling
methods is divided into embedded function blocks (EFBs) and
piecewise linear (PLC) approaches. The second class is also categorized to analytical and numerical methods. The modeling techniques are compared together in terms of supplementary methods, equivalent circuit, complexity, computational burden, accuracy, and implementation platform. Second class can be used to
obtain the PV module parameters for the rst class. In this case,
analytical and numerical approaches can be utilized together with
EFBs method. The latter class needs more computational burden
but the former class is faster and easy to implement in circuit
simulators. It is expected that this review can be used as a reference for power system dynamic modeling purpose.
Acknowledgements
This work has been supported by High Impact Research Secretariat (HIR) at University of Malaya through the Campus Network
Smart Grid System for Energy Security project (Project no. H16001-00-D000032 and Grant no. UM.C/HIR/MOHE/ENG/32).
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