UNISONIC TECHNOLOGIES CO.

, LTD
7N60

Power MOSFET

7.4 Amps, 600 Volts

N-CHANNEL MOSFET
1

DESCRIPTION
The UTC 7N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.

TO-220

TO-220F

FEATURES
* RDS(ON) = 1 @VGS = 10 V
* Low gate and reverse transfer Capacitance ( C: 16 pF typical )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

*Pb-free plating product number:7N60L

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Normal
7N60-TA3-T
7N60-TF3-T

Order Number
Lead Free Plating
7N60L-TA3-T
7N60L-TF3-T

Package
TO-220
TO-220F

Pin Assignment
1
2
3
G
D
S
G
D
S

Packing
Tube
Tube

7N60L-TA3-T
(1)Packing Type

(1) T: Tube

(2)Package Type

(2) TA3: TO-220, TF3: TO-220F

(3)Lead Plating

(3) L: Lead Free Plating, Blank: Pb/Sn

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Copyright 2005 Unisonic Technologies Co., Ltd

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QW-R502-076,B

7N60

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)

PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 1)

SYMBOL
VDSS
VGSS
IAR

RATINGS
600
30
7.4
TC = 25C
7.4
ID
Continuous Drain Current
TC = 100C
4.7
Pulsed Drain Current (Note 1)
IDM
29.6
Avalanche Energy, Single Pulsed (Note 2)
EAS
580
Avalanche Energy, Repetitive Limited by TJ(MAX)
EAR
14.2
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
Power Dissipation (TC = 25)
142
PD
Derate above 25
1.14
Junction Temperature
TJ
+150
Operating and Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W/

THERMAL DATA
PARAMETER

SYMBOL
JA
JC
CS

Junction-to-Ambient
Junction-to-Case
Case-to-Sink

MIN

TYP

MAX
62.5
0.88

UNIT
C/W
C/W
C/W

0.5

ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)

PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

SYMBOL

TEST CONDITIONS

MIN

VGS = 0V, ID = 250A

VDS = 600V, VGS = 0V
IDSS
VDS = 480V, TC = 125C
IGSSF VGS = 30V, VDS = 0V
IGSSR VGS = -30V, VDS = 0V
BVDSS/ ID = 250A, Referenced to
TJ
25C

600

BVDSS

VGS(TH) VDS = VGS, ID = 250A

RDS(ON) VGS = 10V, ID = 3.7A
gFS
VDS = 50V, ID = 3.7A (Note 4)
CISS
COSS
CRSS
td(ON)
tR
td(OFF)
tF
QG
QGS
QGD

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TYP MAX UNIT

10
100
100
-100
0.67
2.0

VDD =300V, ID =7.4A, RG =25

(Note 4, 5)

VDS=480V, ID=7.4A, VGS=10 V

(Note 4, 5)

V/
4.0
1.0

1400
180
21

pF
pF
pF

70
170
140
130
38

ns
ns
ns
ns
nC
nC
nC

6.4

VDS=25V, VGS=0V, f=1.0 MHz

29
7
14.5

V
A
A
nA
nA

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Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 7.4 A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode Forward
ISM
Current
Reverse Recovery Time
tRR
VGS = 0V, IS = 7.4 A,
dIF / dt = 100A/s (Note 4)
Reverse Recovery Charge
QRR
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 7.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

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MIN

TYP MAX UNIT

320
2.4

1.4

7.4

29.6

A
ns
C

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Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

VDS
+
-

RG
Driver
* dv/dt controlled by RG
* I SD controlled by pulse period
* D.U.T.-Device Under Test

Same Type
as D.U.T.

VGS

VDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS
(Driver)

P.W.

Period

D=

P. W.
Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.)

di/dt
IRM
Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.)

VDD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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7N60

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

RL

VDS

VDS

90%

VDD

VGS
RG

VGS

D.U.T.

10V

10%
t D(ON )

Pulse Width 1s

tD (OFF)
tF

tR

Duty Factor 0.1%

Fig. 2A Switching Test Circuit

Same Type
as D.U.T.

50k
12V

0.2F

Fig. 2B Switching Waveforms

QG

10V

0.3F
VDS

QGS

QGD

VGS
DUT
VG

3mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L
VDS
BVDSS

RD

10V

VDD
D.U.T.

tp

Fig. 4A Unclamped Inductive Switching Test Circuit

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IAS

tp

Time

Fig. 4B Unclamped Inductive Switching Waveforms

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Power MOSFET

TYPICAL CHARACTERISTICS
Transfer Characteristics

On-Region Characteristics
V GS
15.0V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm :5.5V

101

10

*Notes:
1. 250s Pulse Test
2. TC=25

10-1
10-1

Drain Current, ID (A)

Drain Current, ID (A)

Top:

101

100

10-1
2

101
100
Drain-Source Voltage, VDS (V)

10

Body Diode Forward Voltage Variation vs.

Source Current and Temperature

2.5
VGS=10V

2.0

VGS=20V
1.5
1.0
0.5
*Note: T J=25
0.0

10

20

15

Reverse Drain Current, IDR (A)

Drain-Source On-Resistance, RDS(ON) ()

*Notes:
1. VDS=50V
2. 250s Pulse Test

Gate-Source Voltage, VGS (V)

On-Resistance Variation vs. Drain Current

and Gate Voltage

101

100

10

25

-1

0.2

Drain Current, ID (A)

1800
Ciss
1000

C rss
400
0

10-1

C iss=C gs+C gd
(C ds=shorted)
C oss=C ds+Cgd
C rss=Cgd

Coss

800

100

*Notes:
1. VGS=0V
2. f = 1MHz

101

Drain-SourceVoltage, VDS (V)

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0.4

0.6

0.8

1.0

1.2

Source-Drain Voltage, VSD (V)

Maximum Safe Operating Area

102
ID, Drain Current (A)

2000

*Notes:
25 1. VGS=0V
2. 250s Pulse Test

150

Capacitance Characteristics

Capacitance (pF)

-55

150
25

Operation in This Area

is Limited by RDS(on)
100s
1ms

101

10ms
100

10-1
100

*Notes:
1. Tc=25
2. TJ=150
3. Single Pulse
101

DC

102

103

Drain-Source Voltage, VDS (V)

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Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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