ZTX752

ZTX753
ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
ZTX752

ZTX753

PARAMETER

SYMBOL

Transition
Frequency

fT

Switching Times

ton

40

40

ns

toff

600

600

ns

Output
Capacitance

MIN. TYP.
100

MAX. MIN. TYP.

140

100

140

UNIT CONDITIONS.

MHz

30

Cobo

MAX.

30

IC=-100mA, VCE=-5V
f=100MHz

pF

VCB=10V f=1MHz

THERMAL CHARACTERISTICS
SYMBOL

MAX.

UNIT

175
116
70

C/W
C/W
C/W

Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

Thermal Resistance:Junction to Ambient1

Junction to Ambient2
Junction to Case

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

2.0

C
1.5

Am

1.0

0.5
0

-40 -20

20 40

bie

as

nt t

te

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

UNIT
V

Collector-Base Voltage

VCBO

-100

-120

VCEO

-80

-100

Emitter-Base Voltage

VEBO

-5

Peak Pulse Current

ICM

-6

Continuous Collector Current

IC

-2

Ptot

1
5.7

W
mW/C

-55 to +200

Power Dissipation

at Tamb=25C
derate above 25C

Tj:Tstg

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

PARAMETER

ZTX752
ZTX753
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
-120

IC=-100A

Collector-Emitter
Breakdown
Voltage

V(BR)CEO

-80

-100

IC=-10mA*

V(BR)EBO

-5

-5

IE=-100A

D=0.5

Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current

ICBO

D=0.2

-10

A
A
A
A

VCB=-80V
VCB=-100V
VCB=-80V,Tamb=100C
VCB=-100V,Tamb=100C

-0.1

-0.1

VEB=-4V

Collector-Emitter
VCE(sat)
Saturation Voltage

-0.17 -0.3
-0.30 -0.5

-0.17 -0.3
-0.30 -0.5

V
V

IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*

Base-Emitter
VBE(sat)
Saturation Voltage

-0.9

-1.25

-0.9

-1.25 V

IC=-1A, IB=-100mA*

Base-Emitter
Turn-On Voltage

-0.8

-1

-0.8

-1

IC=-1A, VCE=-2V*

D=t1/tP

-0.1

-0.1

-10

D=0.1

0.001

0.01

0.1

10

100

T -Temperature (C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-261

ZTX753

Collector-Emitter Voltage

Single Pulse

0
0.0001

ZTX752

-100

tP
100

V(BR)CBO

D=1 (D.C.)

t1

C
B

Collector-Base
Breakdown
Voltage

200

Thermal Resistance (C/W)

Max Power Dissi ation - (Watts)

2.5

ISSUE 2 JULY 94
FEATURES
* 100 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt

IC=-500mA, VCC=-10V
IB1=IB2=-50mA

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

PARAMETER

ZTX752
ZTX753

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

Emitter Cut-Off
Current

IEBO

VBE(on)

3-260

ZTX752
ZTX753
ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
ZTX752

ZTX753

PARAMETER

SYMBOL

Transition
Frequency

fT

Switching Times

ton

40

40

ns

toff

600

600

ns

Output
Capacitance

MIN. TYP.
100

MAX. MIN. TYP.

140

100

140

UNIT CONDITIONS.

MHz

30

Cobo

MAX.

30

IC=-100mA, VCE=-5V
f=100MHz

pF

VCB=10V f=1MHz

THERMAL CHARACTERISTICS
SYMBOL

MAX.

UNIT

175
116
70

C/W
C/W
C/W

Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)

Thermal Resistance:Junction to Ambient1

Junction to Ambient2
Junction to Case

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

2.0

C
1.5

Am

1.0

0.5
0

-40 -20

20 40

bie

as

nt t

te

em

pe

ra

per

tu

re

at u
re

60 80 100 120 140 160 180 200

E-Line
TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

UNIT
V

Collector-Base Voltage

VCBO

-100

-120

VCEO

-80

-100

Emitter-Base Voltage

VEBO

-5

Peak Pulse Current

ICM

-6

Continuous Collector Current

IC

-2

Ptot

1
5.7

W
mW/C

-55 to +200

Power Dissipation

at Tamb=25C
derate above 25C

Tj:Tstg

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

PARAMETER

ZTX752
ZTX753
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
-120

IC=-100A

Collector-Emitter
Breakdown
Voltage

V(BR)CEO

-80

-100

IC=-10mA*

V(BR)EBO

-5

-5

IE=-100A

D=0.5

Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current

ICBO

D=0.2

-10

A
A
A
A

VCB=-80V
VCB=-100V
VCB=-80V,Tamb=100C
VCB=-100V,Tamb=100C

-0.1

-0.1

VEB=-4V

Collector-Emitter
VCE(sat)
Saturation Voltage

-0.17 -0.3
-0.30 -0.5

-0.17 -0.3
-0.30 -0.5

V
V

IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*

Base-Emitter
VBE(sat)
Saturation Voltage

-0.9

-1.25

-0.9

-1.25 V

IC=-1A, IB=-100mA*

Base-Emitter
Turn-On Voltage

-0.8

-1

-0.8

-1

IC=-1A, VCE=-2V*

D=t1/tP

-0.1

-0.1

-10

D=0.1

0.001

0.01

0.1

10

100

T -Temperature (C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-261

ZTX753

Collector-Emitter Voltage

Single Pulse

0
0.0001

ZTX752

-100

tP
100

V(BR)CBO

D=1 (D.C.)

t1

C
B

Collector-Base
Breakdown
Voltage

200

Thermal Resistance (C/W)

Max Power Dissi ation - (Watts)

2.5

ISSUE 2 JULY 94
FEATURES
* 100 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
* Ptot=1 Watt

IC=-500mA, VCC=-10V
IB1=IB2=-50mA

*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

PARAMETER

ZTX752
ZTX753

PNP SILICON PLANAR

MEDIUM POWER TRANSISTORS

Emitter Cut-Off
Current

IEBO

VBE(on)

3-260

ZTX752
ZTX753
TYPICAL CHARACTERISTICS
0.6

0.4

Switching time

VCE(sat) - (Volts)

0.5

IC/IB=10

0.3
0.2
0.1
0

0.0001

0.001

0.01

0.1

10

td
tr
tf
ns
140

IB1=IB2=IC/10
ts
ns
1400

120

1200

100

1000

80

800

60

600

40

400

20

200

td
ts
tf
tr

0.1

IC - Collector Current (Amps)

IC - Collector Current (Amps)

VCE(sat) v IC

Switching Speeds

1.4

VBE(sat) - (Volts)

hFE - Gain

225
175
VCE=2V
125

1.2

1.0

IC/IB=10

0.8

75
0.6
0
0.01

0.1

10

0.0001

0.01

0.1

IC - Collector Current (Amps)

hFE v IC

VBE(sat) v IC

IC - Collector Current (Amps)

1.2

1.0
VCE=2V
0.8

0.6

0.4
0.0001

0.001

0.01

0.1

10

Single Pulse Test at Tamb=25C

10

VBE - (Volts)

0.001

IC - Collector Current (Amps)

0.1

D.C.
1s
100ms
10ms
1.0ms
100s

ZTX752
ZTX753

10
0.01
0.1

10

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-262

100