GenX3TM 600V

IGBTs

IXGA36N60A3
IXGP36N60A3
IXGH36N60A3

VCES = 600V
IC110 = 36A
VCE(sat) 1.4V
TO-263 AA (IXGA)

Ultra Low Vsat PT IGBT for

up to 5kHz Switching

G
E
C (Tab)

Symbol

Test Conditions

Maximum Ratings

VCES

TC = 25C to 150C

600

VCGR

TJ = 25C to 150C, RGE = 1M

600

VGES

Continuous

20

VGEM

Transient

30

IC110

TC = 110C

36

ICM

TC = 25C, 1ms

200

SSOA

VGE = 15V, TVJ = 125C, RG = 5

ICM = 60

(RBSOA)

Clamped Inductive Load

VCE VCES

PC

TC = 25C

TO-220AB (IXGP)

220

-55 ... +150

TJM

150

Tstg

-55 ... +150

TJ

TL
TSOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300
260

C
C

FC
Md

Mounting Force (TO-263)

10..65 / 2.2..14.6
Mounting Torque (TO-220 & TO-247)
1.13 / 10

N/lb
Nm/lb.in

Weight

TO-263
TO-220
TO-247

2.5
3.0
6.0

g
g
g

CE

C (Tab)

TO-247 (IXGH)

G = Gate
E = Emitter

C (Tab)

C = Collector
Tab = Collector

Features

Optimized for Low Conduction Losses

International Standard Packages

Advantages

Symbol Test Conditions

Characteristic Values

(TJ = 25C unless otherwise specified)

Min.

BVCES

IC = 250A, VGE = 0V

600

VGE(th)

IC = 250A, VCE = VGE

3.0

ICES

VCE = VCES, VGE = 0V

VCE = 0V, VGE = 20V

VCE(sat)

IC = 30A, VGE = 15V, Note 1

Max.
V
5.5

25 A
TJ = 125C

IGES

Typ.

250 A
100 nA
1.4

Applications

2013 IXYS CORPORATION, All Rights Reserved

High Power Density

Low Gate Drive Requirement

Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits

DS100006A(7/13)

IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
Symbol
Test Conditions
(TJ = 25C unless otherwise specified)
gfs

Characteristic Values
Min.
Typ.
Max.

IC = 30A, VCE = 10V, Note 1

25

Cies
Coes

VCE = 25V, VGE = 0V, f = 1MHz

TO-220 (IXGP) Outline

42

2380

pF

115

pF

Cres

30

pF

Qg

80

nC

12

nC

36

nC

18

ns

Qge

IC = 30A, VGE = 15V, VCE = 0.5 VCES

Qgc
td(on)

Inductive load, TJ = 25C

IC = 30A, VGE = 15V

tri
Eon
td(off)

VCE = 400V, RG = 5

tfi

Note 2

Eoff
td(on)
Inductive load, TJ = 125C
IC = 30A, VGE = 15V

tri
Eon
td(off)

VCE = 400V, RG = 5

tfi

Note 2

Eoff

23

ns

0.74

mJ

330

ns

325

ns

3.00

mJ

18

ns

25

ns

1.50

mJ

500

ns

500

ns

5.30

mJ

RthJC

0.56 C/W

RthCS

Notes:

(TO-247)
(TO-220)

0.25
0.50

Pins:

1 - Gate
2 - Collector
3 - Emitter

TO-247 (IXGH) Outline

C/W
C/W

1. Pulse test, t 300s, duty cycle, d 2%.

2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
1 - Gate
2,4 - Collector
3 - Emitter

TO-263 (IXGA) Outline

1 - Gate
2,4 - Collector
3 - Emitter

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

7,157,338B2

IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
Fig. 1. Output Characteristics @ TJ = 25C

Fig. 2. Extended Output Characteristics @ TJ = 25C

60

300
VGE = 15V
13V
11V
9V

250

40

I C - Amperes

I C - Amperes

50

VGE = 15V
13V
11V

7V
30

20

9V

200

150
7V

100

10

50

5V

5V
0

0
0.0

0.5

1.0

1.5

2.0

1.4

60
VGE = 15V
13V
11V
9V

12

14

16

125

150

VGE = 15V
1.3
I C = 60A

V CE(sat) - Normalized

I C - Amperes

10

Fig. 4. Dependence of VCE(sat) on

Junction Temperature

Fig. 3. Output Characteristics @ TJ = 125C

50

VCE - Volts

VCE - Volts

40
7V

30

20

10

1.2
1.1
I C = 30A
1.0
0.9
0.8

5V

I C = 15A

0.7
0.0

0.5

1.0

1.5

2.0

-50

-25

VCE - Volts

25

50

75

100

TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

Fig. 6. Input Admittance

200

4.0

180

TJ = 25C

3.5

160
140

I C - Amperes

VCE - Volts

3.0
I C = 60A
30A
15A

2.5
2.0

120
100
80
60

1.5

TJ = 125C
25C
- 40C

40
1.0

20

0.5

0
5

10

11

12

13

VGE - Volts

2013 IXYS CORPORATION, All Rights Reserved

14

15

3.5

4.0

4.5

5.0

5.5

6.0

VGE - Volts

6.5

7.0

7.5

8.0

8.5

IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
Fig. 8. Gate Charge

Fig. 7. Transconductance
80

16
TJ = - 40C

70
60

I C = 30A
I G = 10 mA

12

25C
50

VGE - Volts

g f s - Siemens

VCE = 300V

14

125C
40

10
8

30

20

10

2
0

0
0

20

40

60

80

100

120

140

160

180

200

10

20

30

40

50

60

70

80

QG - NanoCoulombs

I C - Amperes

Fig. 9. Reverse-Bias Safe Operating Area

Fig. 10. Capacitance

70

10,000

f = 1 MHz
Capacitance - PicoFarads

60

I C - Amperes

50
40
30
20
TJ = 125C

Cies

1,000

Coes
100

RG = 5
dv / dt < 10V / ns

10

Cres

10
100

200

300

400

500

600

10

VCE - Volts

15

20

25

30

35

40

VCE - Volts

Fig. 11. Maximum Transient Thermal Impedance

Z(th)JC - C / W

0.1

0.01
0.00001

0.0001

0.001

0.01

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

0.1

10

IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance

12

Fig. 13. Inductive Switching Energy Loss vs.

Junction Temperature

11

4.0

Eoff

Eon

2.0

----

RG = 5VGE = 15V
Eon -

---

VCE = 400V

2.4

1.6

VCE = 400V

I C = 60A

1.2
I C = 30A

0.8

0.8

0.4

0.0
120

1.6

I C = 30A

4
I C = 15A
2
0

20

40

60

80

100

I C = 15A
25

35

45

55

RG - Ohms

----

0.8
TJ = 25C

td(off) - - - -

35

40

45

1100

VCE = 400V

750

900
I C = 60A

650

700

50

55

0.4

550

0.0

450

500

60

20

40

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current
600

540

420

450

360

TJ = 25C

300

250

240
20

25

30

35

40

45

50

I C - Amperes

2013 IXYS CORPORATION, All Rights Reserved

55

60

t f - Nanoseconds

t f - Nanoseconds

TJ = 125C

560

VCE = 400V

600

480

I C = 15A, 30A, 60A

500

400

400

320

300
25

35

45

55

65

75

85

TJ - Degrees Centigrade

95

105

115

240
125

t d(off) - Nanoseconds

480

td(off) - - - -

RG = 5, VGE = 15V

700

t d(off) - Nanoseconds

650

15

640

tf

VCE = 400V

350

300
120

100

800

td(off) - - - -

RG = 5, VGE = 15V

550

80

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature

850

tf

60

RG - Ohms

I C - Amperes

750

0.0
125

I C = 15A, 30A

30

t f - Nanoseconds

Eoff - MilliJoules

TJ = 125C

25

115

t d(off) - Nanoseconds

1.2

Eon - MilliJoules

20

105

TJ = 125C, VGE = 15V

850

1.6

VCE = 400V

15

95

1300

tf

RG = 5VGE = 15V

85

950

2.0

75

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance

11
Eon

65

TJ - Degrees Centigrade

Fig. 14. Inductive Switching Energy Loss vs.

Collector Current
Eoff

Eon - MilliJoules

TJ = 125C , VGE = 15V

8

Eoff - MilliJoules

Eoff

3.2

I C = 60A

Eon - MilliJoules

Eoff - MilliJoules

10

IXGA36N60A3 IXGP36N60A3
IXGH36N60A3
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance

Fig. 19. Inductive Turn-on Switching Times vs.

Junction Temperature

150

110

tr

65

TJ = 125C, VGE = 15V

70

I C = 30A

50

I C = 15A

30

30

25

I C = 60A

45

tr

23

td(on) - - - -

RG = 5, VGE = 15V

35

21

VCE = 400V
I C = 30A

25

19

15

t d(on) - Nanoseconds

90

60

55

90

I C = 60A

t r - Nanoseconds

VCE = 400V

t d(on) - Nanoseconds

t r - Nanoseconds

120

27

td(on) - - - -

17
I C = 15A

0
0

20

40

60

80

10
120

100

5
25

RG - Ohms

35

45

55

65

75

85

95

105

115

15
125

TJ - Degrees Centigrade

Fig. 20. Inductive Turn-on Switching Times vs.

Collector Current
60

25

tr

td(on) - - - 23

RG = 5, VGE = 15V
VCE = 400V
TJ = 125C

40

21
TJ = 25C

30

19

20

17

10

t d(on) - Nanoseconds

t r - Nanoseconds

50

15
15

20

25

30

35

40

45

50

55

60

I C - Amperes

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_36N60A3(55) 7-22-13-B