SSP2N60B/SSS2N60B

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.

2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V

Low gate charge ( typical 12.5 nC)
Low Crss ( typical 7.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

TO-220

G DS

GD S

SSP Series

TO-220F
SSS Series

Absolute Maximum Ratings

Symbol
VDSS
ID

TC = 25C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current

SSP2N60B

- Continuous (TC = 100C)

IDM

Drain Current

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

IAR
EAR
dv/dt
PD
TJ, TSTG
TL

- Pulsed

SSS2N60B

Units
V

2.0

2.0 *

1.3

1.3 *

6.0

6.0 *

600

(Note 1)

30

(Note 2)

120

mJ

Avalanche Current

(Note 1)

2.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

(Note 1)

5.4
5.5

-55 to +150

mJ
V/ns
W
W/C
C

300

(Note 3)

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

54
0.43

23
0.18

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case Max.

RCS

Thermal Resistance, Case-to-Sink Typ.

0.5

--

C/W

RJA

Thermal Resistance, Junction-to-Ambient Max.

62.5

62.5

C/W

2001 Fairchild Semiconductor Corporation

SSP2N60B
2.32

SSS2N60B
5.5

Units
C/W

Rev. A, November 2001

SSP2N60B/SSS2N60B

November 2001

Symbol

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

600

--

--

--

0.65

--

V/C

VDS = 600 V, VGS = 0 V

--

--

10

VDS = 480 V, TC = 125C

--

--

100

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

2.0

--

4.0

--

3.8

5.0

--

2.05

--

--

380

490

pF

--

35

46

pF

--

7.6

9.9

pF

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
/
TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25C

IDSS
IGSSF
IGSSR

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 1.0 A

gFS

Forward Transconductance

VDS = 40 V, ID = 1.0 A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 300 V, ID = 2.0 A,

RG = 25
(Note 4, 5)

VDS = 480 V, ID = 2.0 A,

VGS = 10 V
(Note 4, 5)

--

16

40

ns

--

50

110

ns

--

40

90

ns

--

40

90

ns

--

12.5

17

nC

--

2.2

--

nC

--

5.4

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

2.0

ISM

--

--

6.0

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 2.0 A
Drain-Source Diode Forward Voltage

--

--

1.4

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 2.0 A,
dIF / dt = 100 A/s

(Note 4)

--

250

--

ns

--

1.31

--

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 55mH, IAS = 2.0A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 2.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

SSP2N60B/SSS2N60B

Electrical Characteristics

SSP2N60B/SSS2N60B

Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V

ID, Drain Current [A]

10

ID, Drain Current [A]

Top :

-1

10

10

150 C

25 C
o

-55 C

Notes :
1. 250 s Pulse Test
2. TC = 25
-1

-2

10

Notes :
1. VDS = 40V
2. 250 s Pulse Test

-1

10

10

10

10

10

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

18

VGS = 10V

IDR, Reverse Drain Current [A]

RDS(ON) [ ],
Drain-Source On-Resistance

15

12

VGS = 20V
9

10

150

25
Notes :
1. VGS = 0V
2. 250 s Pulse Test

Note : TJ = 25
-1

0
0

10

0.2

0.4

0.6

1.0

1.2

1.4

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

800

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

12

VDS = 120V

600

Ciss
400

Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz

200

Crss

VGS, Gate-Source Voltage [V]

10

Capacitance [pF]

0.8

ID, Drain Current [A]

VDS = 300V
8

VDS = 480V

2
Note : ID = 2.0 A

0
-1
10

10

10

10

12

14

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

SSP2N60B/SSS2N60B

Typical Characteristics

(Continued)

3.0

1.2

RDS(ON) , (Normalized)
Drain-Source On-Resistance

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

2.5

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

150

2.0

1.5

1.0

Notes :
1. VGS = 10 V
2. ID = 1.0 A

0.5

0.0
-100

200

50

100

200

Operation in This Area

is Limited by R DS(on)
1

10

100 s

100 s

1 ms

ID, Drain Current [A]

1 ms

ID, Drain Current [A]

150

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area

is Limited by R DS(on)

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

vs Temperature

10

-50

TJ, Junction Temperature [ C]

10 ms

10

DC

-1

10 ms

10

100 ms
DC

-1

10

10

Notes :

Notes :

1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2

-2

10

10

10

10

10

10

10

VDS, Drain-Source Voltage [V]

10

10

10

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area

for SSP2N60B

Figure 9-2. Maximum Safe Operating Area

for SSS2N60B

1.5

ID, Drain Current [A]

1.2

0.9

0.6

0.3

0.0
25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current

vs Case Temperature

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

(Continued)

D = 0 .5

N o te s :
1 . Z J C (t) = 2 .3 2 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .2
0 .1
0 .0 5
10

-1

0 .0 2
0 .0 1

JC

(t), T h e rm a l R e s p o n s e

10

SSP2N60B/SSS2N60B

Typical Characteristics

PDM
t1

s in g le p u ls e

10

t2

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

D = 0 .5

10

0 .2

N o te s :
1 . Z J C (t) = 5 .5 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .1
0 .0 5

10

0 .0 2
0 .0 1

-1

PDM

JC

(t), T h e r m a l R e s p o n s e

Figure 11-1. Transient Thermal Response Curve for SSP2N60B

t1
t2

s in g le p u ls e

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for SSS2N60B

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

SSP2N60B/SSS2N60B

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD
DUT

10V
tp

2001 Fairchild Semiconductor Corporation

ID (t)
VDS (t)

VDD
tp

Time

Rev. A, November 2001

SSP2N60B/SSS2N60B

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

TO-220
4.50 0.20
2.80 0.10
(3.00)

+0.10

1.30 0.05

18.95MAX.

(3.70)

3.60 0.10

15.90 0.20

1.30 0.10

(8.70)

(1.46)

9.20 0.20

(1.70)

9.90 0.20

1.52 0.10

0.80 0.10
2.54TYP
[2.54 0.20]

10.08 0.30

(1.00)

13.08 0.20

(45

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

2.54TYP
[2.54 0.20]

10.00 0.20

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

SSP2N60B/SSS2N60B

Package Dimensions

3.30 0.10

TO-220F
10.16 0.20

2.54 0.20

3.18 0.10

(7.00)

(1.00x45)

15.87 0.20

15.80 0.20

6.68 0.20

(0.70)

0.80 0.10
)
0

(3

9.75 0.30

MAX1.47

#1
+0.10

0.50 0.05

2.54TYP
[2.54 0.20]

2.76 0.20

2.54TYP
[2.54 0.20]

9.40 0.20

4.70 0.20

0.35 0.10

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation

Rev. A, November 2001

SSP2N60B/SSS2N60B

Package Dimensions (Continued)

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intended to be an exhaustive list of all such trademarks.

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GTO
HiSeC
ISOPLANAR
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MicroPak
MICROWIRE

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OPTOPLANAR
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POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SLIENT SWITCHER

SMART START
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
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UltraFET

VCX

STAR*POWER is used under license

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation

Rev. H4

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