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6 AUTHORS, INCLUDING:
Jun Chen
Longlong Fan
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Laijun Liu
Xianran Xing
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Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education,
Guilin University of Technology, Guilin 541004, China
3
State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing,
Beijing 100083, China
2
(Received 6 September 2012; accepted 12 November 2012; published online 13 December 2012)
Preparation, piezoelectric, and dielectric properties were investigated in a new Bi-based
piezoelectric material of (1x)Bi(Ni1/2Hf1/2)O3-xPbTiO3. The system can form a pure perovskite
structure with the morphotropic phase boundary locating at x 0.62, separating the rhombohedral
and tetragonal phases. It is interesting to observe that the morphotropic phase boundary
composition shows a very high piezoelectric coefficient of d33 (446 pC/N), which is comparable to
BiScO3-PbTiO3 (460 pC/N). The Curie temperature of the morphotropic phase boundary is around
290 C. Furthermore, the system has a relatively low coercive field, which makes the poling easily.
Temperature dependence of dielectric properties also shows that the Bi(Ni1/2Hf1/2)O3-PbTiO3
system has a strong relaxor feature. Present new Bi-based perovskite of Bi(Ni1/2Hf1/2)O3-PbTiO3 is
C 2012 American
a competitive piezoelectric material with high piezoelectric performance. V
Institute of Physics. [http://dx.doi.org/10.1063/1.4769405]
I. INTRODUCTION
Many attempts have been carried out to obtain high piezoelectric performance ceramics for the increasing demand
of piezoelectric materials in industrial applications.13
Recently, investigations have been focused on BiMeO3PbTiO3 solid solutions, where Me can be a single cation of
valence 3 or a mixture of cations with an average valence
of 3. Studies have shown that the Bi substitution in the
BiMeO3-PbTiO3 systems plays an important role in enhancing both tetragonality (c/a) and Curie temperature (TC).46 In
previous studies of the Bi-based systems, BiScO3-PbTiO3
(BS-PT) exhibits excellent piezoelectric properties in the
morphotropic phase boundary (MPB, d33 460 pC/N and
TC 450 C),1 which is even superior to the conventional
piezoelectric ceramics based on Pb(Zr1xTix)O3 (PZT).
However, the highest d33 in the other Bi-based systems
reaches approximately 300 pC/N of Bi(Sc1/2Fe1/2)O3-PbTiO3
(d33 298 pC/N),4 which is much lower than that of BS-PT.
Furthermore, it is generally known that only a few BiMeO3PbTiO3 systems can form the MPB where the piezoelectric
properties are optimized.79 The initial work is to find new
Bi-based materials with high piezoelectric performance in
the MPB.
Compared to PZT, PbHfO3-PbTiO3 (PHT) shows a sim ) is
ilar behavior, due to the cation radius of Hf4 (0.71 A
),10,11 thus they possess similar
very close to Zr4 (0.72 A
ionic polarizations. Jaffe et al. has determined the binary
phase diagram of the isomorphic PHT series, where the
rhombohedral Hf-rich phase is separated from the tetragonal
Ti-rich phase by a MPB at 50%PT, with dielectric constant
a)
0021-8979/2012/112(11)/114120/4/$30.00
112, 114120-1
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114120-2
Pan et al.
FIG. 2. (a) Unipolar S(E) curves at room temperature, and (b) piezoelectric
coefficient d33 of (1x)Bi(Ni1/2Hf1/2)O3-xPbTiO3 for x 0.64, 0.62, 0.60,
and 0.58.
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114120-3
Pan et al.
C
er er; max
where er,max is the maximum value of the dielectric constant
er at the transition temperature Tm, C is a constant, and c
(1 c 2) is the diffuse exponent. Generally, c 1 corresponds to a normal ferroelectric while c 2 to an ideal
relaxor ferroelectric. The plots of ln(1/er 1/er,max) versus
ln(T Tm) of 0.38BNH-0.62PT exhibit a highly linear relation with an ultrahigh relaxor degree of 1.72 at 1 MHz.15 It is
significantly higher than the other reported Bi-based systems,
such as BiMnO3-PbTiO3,23 BiScO3-PbTiO3,24 and the Codoped in BiScO3-PbTiO3 piezoelectric ceramics.25 The
above suggest that the BNH-PT can be a potential electronic
ceramic material for its strong relaxor feature.
Piezoelectric materials, which can tolerate high temperature, usually have a wide application, so the temperature dependence electric-field induced unipolar strain investigation
is essential. Temperature dependence of large-signal d33 is
presented in Fig. 4. All three compositions show a rapid
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114120-4
Pan et al.
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