IRF540, SiHF540

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

100

RDS(on) ()

VGS = 10 V

0.077

Qg (Max.) (nC)

72

Qgs (nC)

11

Qgd (nC)

32

Configuration

Single

Dynamic dV/dt Rating

Repetitive Avalanche Rated
175 C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC

Available

RoHS*
COMPLIANT

DESCRIPTION

TO-220AB

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

S
S
N-Channel MOSFET

ORDERING INFORMATION
Package

TO-220AB
IRF540PbF
SiHF540-E3
IRF540
SiHF540

Lead (Pb)-free
SnPb

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Currenta

ID

UNIT
V

28
20

IDM

110
1.0

W/C

Single Pulse Avalanche Energyb

EAS

230

mJ

Repetitive Avalanche Currenta

IAR

28

Repetitive Avalanche Energya

EAR

15

mJ

Linear Derating Factor

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dtc

Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque

for 10 s
6-32 or M3 screw

PD

150

dV/dt

5.5

V/ns

TJ, Tstg

- 55 to + 175
300d

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 C, L = 440 H, Rg = 25 , IAS = 28 A (see fig. 12).
c. ISD 28 A, dI/dt 170 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91021
S11-0510-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540, SiHF540
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

1.0

UNIT

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient

VDS

VGS = 0 V, ID = 250 A

100

VDS/TJ

Reference to 25 C, ID = 1 mA

0.13

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

25

VDS = 80 V, VGS = 0 V, TJ = 150 C

250

Gate-Source Threshold Voltage

0.077

gfs

VDS = 50 V, ID = 17 Ab

8.7

Input Capacitance

Ciss

VGS = 0 V,

1700

Output Capacitance

Coss

VDS = 25 V,

560

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

120

Total Gate Charge

Qg

72

Gate-Source Charge

Qgs

11

Drain-Source On-State Resistance

Forward Transconductance

RDS(on)

ID = 17 Ab

VGS = 10 V

Dynamic

VGS = 10 V

ID = 17 A, VDS = 80 V,
see fig. 6 and 13b

pF

nC

Gate-Drain Charge

Qgd

32

Turn-On Delay Time

td(on)

11

44

53

43

4.5

7.5

28

110

2.5

180

360

ns

1.3

2.8

Rise Time
Turn-Off Delay Time

tr
td(off)

Fall Time

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

VDD = 50 V, ID = 17 A
Rg = 9.1 , RD = 2.9, see fig. 10b

Between lead,
6 mm (0.25") from
package and center of
die contact

ns

nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = 28 A, VGS = 0 Vb
TJ = 25 C, IF = 17 A, dI/dt = 100 A/sb

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

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Document Number: 91021

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540, SiHF540
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

102

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

25 C

101

4.5 V

ID, Drain Current (A)

ID, Drain Current (A)

102

175 C

101

20 s Pulse Width
TC = 25 C
10-1

100

101

VDS, Drain-to-Source Voltage (V)

91021_01

20 s Pulse Width
VDS = 50 V

4.5 V

20 s Pulse Width
TC = 175 C
10-1
91021_02

100

101

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 175 C

Document Number: 91021

S11-0510-Rev. B, 21-Mar-11

10

Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

(Normalized)

ID, Drain Current (A)

101

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

VGS, Gate-to-Source Voltage (V)

91021_03

Fig. 1 - Typical Output Characteristics, TC = 25 C

102

91021_04

3.0

ID = 17 A
VGS = 10 V

2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0

20 40 60 80 100 120 140 160180

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

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This datasheet is subject to change without notice.

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IRF540, SiHF540

3000

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd

Capacitance (pF)

2400

Ciss

1800

1200
Coss
600
Crss

ISD, Reverse Drain Current (A)

Vishay Siliconix

101

25 C

100

VGS = 0 V

10-1
100

101

0.4

VDS, Drain-to-Source Voltage (V)

91021_05

0.8

ID = 17 A

Operation in this area limited

by RDS(on)

VDS = 80 V
16

ID, Drain Current (A)

VDS = 50 V
VDS = 20 V

12

10 s

102
5

100 s

1 ms

10
5

0
91021_06

10

20

30

40

50

60

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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1
0.1

70
91021_08

10 ms

TC = 25 C
TJ = 175 C
Single Pulse

For test circuit

see figure 13

1.6

Fig. 7 - Typical Source-Drain Diode Forward Voltage

103

20

1.2

VSD, Source-to-Drain Voltage (V)

91021_07

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

VGS, Gate-to-Source Voltage (V)

150 C

10

102

103

104

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

Document Number: 91021

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540, SiHF540
Vishay Siliconix

RD

VDS
VGS
30

D.U.T.

RG

+
- VDD

25

ID, Drain Current (A)

10 V
Pulse width 1 s
Duty factor 0.1 %

20
15

Fig. 10a - Switching Time Test Circuit

10
VDS

90 %
0
25

50

75

100

125

150

175

TC, Case Temperature (C)

91021_09

10 %
VGS
td(on)

Fig. 9 - Maximum Drain Current vs. Case Temperature

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

1
0 0.5
PDM
0.2
0.1

0.1

t1
t2

0.05

Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC

Single Pulse
(Thermal Response)

0.02
0.01
10-2
10-5

91021_11

10-4

10-3

10-2

0.1

10

t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91021

S11-0510-Rev. B, 21-Mar-11

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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540, SiHF540
Vishay Siliconix

L
Vary tp to obtain
required IAS

VDS

VDS

tp
VDD
D.U.T

RG

V DD

IAS

VDS

10 V
0.01

tp

IAS

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

600
ID
11 A
20 A
Bottom 28 A
Top

500
400
300
200
100
0

VDD = 25 V
25

91021_12c

50

75

100

125

150

175

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.
50 k

QG

10 V

12 V

0.2 F
0.3 F

QGS

QGD

D.U.T.

VG

VDS

VGS
3 mA

Charge
IG
ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform

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Fig. 13b - Gate Charge Test Circuit

Document Number: 91021

S11-0510-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF540, SiHF540
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+

D.U.T.

Circuit layout considerations

Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive

P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery
current

Body diode forward

current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91021.

Document Number: 91021

S11-0510-Rev. B, 21-Mar-11

www.vishay.com
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This datasheet is subject to change without notice.

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Package Information
www.vishay.com

Vishay Siliconix

TO-220AB
MILLIMETERS

H(1)

L(1)

M*

b(1)

INCHES

DIM.

MIN.

MAX.

MIN.

MAX.

4.25

4.65

0.167

0.183

0.69

1.01

0.027

0.040

b(1)

1.20

1.73

0.047

0.068

0.36

0.61

0.014

0.024

14.85

15.49

0.585

0.610

10.04

10.51

0.395

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

1.14

1.40

0.045

0.055

H(1)

6.09

6.48

0.240

0.255

J(1)

2.41

2.92

0.095

0.115

13.35

14.02

0.526

0.552
0.150

L(1)

3.32

3.82

0.131

3.54

3.94

0.139

0.155

2.60

3.00

0.102

0.118

ECN: X12-0208-Rev. N, 08-Oct-12

DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
Xian and Mingxin actual photo
C

b
e
J(1)
e(1)

Revison: 08-Oct-12

Document Number: 71195

1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

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Vishay

Disclaimer
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

Document Number: 91000