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35 m SiGe BiCMOS
Technology for WLAN/WiMax Applications
Mehmet Kaynak, Ibrahim Tekin, Ayhan Bozkurt and Yasar Gurbuz
Sabanci University, Faculty of Engineering and Natural Sciences, Orhanli, Tuzla, 34956, Istanbul,
Turkey Tel: ++90(216) 483 9533, e-mail:mehmetk@su.sabanciuniv.edu
Abstract This paper presents a design methodology of a
low noise and low power fully-integrated LNA, targeted to all
the three bands of IEEE 802.11a WLAN applications in the 56 GHz band and using 0.35m SiGe BiCMOS HBT
technology. We emphasized in this paper the importance
extraction of parasitic components through the use of
electromagnetic simulations, which is usually ignored in the
literature of similar works/research when reporting noise
figure. Finally, we have obtained a SiGe HBT on-chip matched
LNA, exhibiting NF of 2.75 dB, gain of >15dB, input return
loss of < -15dB, output return loss of < -10dB. The circuit
consumes only 10.6 mW under 3.3V supply voltage. The
circuit die area is 595 925 m2, including pads.
Keywords Low Noise Amplifier, LNA, SiGe, BiCMOS,
HBT, high-Q inductor, simultaneous matching
I.
INTRODUCTION
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C
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