Professional Documents
Culture Documents
First and foremost, I would like to thank Infineon Technologies for giving me a
chance for my industrial. I was assigned to Quality Managements Failure Analysis 4
(IFMY QM FA 4). During the training period, I have gained a lot of extra knowledge
beyond the lecturers in the university. Besides that, I learnt a lot of electrical and
electronic knowledge in this company. I believe all these experience will help me to
adapt to different type of working environment in the future.
Hereby, I would like to thank my supervisor Mr Edison Jayganth for assisting me
and sharing the working experience with me. Furthermore, he taught me a lot of
soft skill and technical hands on. I learnt to organize things well and have a good
time management under his supervision. He is very busy with the urgent cases but
he still find time to give me some task so that I have chances to learn more.
Nevertheless, a special thanks to Ms Chiang Shu Fang who gave me a lot of concern
during work. She taught me how to use the Infineon Technologies iFact system and
the theory of machines. I also thank to her effort in arranging safety training. Even
though she is busy with her work, she still guided and helped me when I am still
new to the machine operation and the failure analysis.
I am taking this chance to personally thank to the leader of FA 4, Mr Chong Hock
Heng. He trusts me and assigned me for some urgent and important cases,
allowing me to work like a real engineer. Also, thank to him for spending his time
explain the causes of the failure device and the ways to solve the problem.
Last but not least, I would like to thanks all the engineers and technicians who
willing to share their knowledge, gave me machine training and help me in my work
during the training period.
Table of Contents
X-ray..................................................................................................19 - 20
Liquid Crystal Thermograph ..................................................................20 - 21
Die Probing..........................................................................................21
Curve Tracer...............................................................................................21
Bake Treatment and Sample Storing..............................................................21
Safety Training....................................................................................22 23
Skills Gained .............................................................................................25
Company Safety Policy.................................................................................24
General Safety Policy............................................................................24 - 25
FA Safety Policy .........................................................................................25
References...............................................................................................27
Appendix...........................................................................................28 - 31
Name
Address
: Free Trade
Batu Berendam
75350 Melaka
Telephone Number
: +606 2325266
Fax Number
: +606 2321539
Website
: www.infineon.com
dynamic,
future-oriented
company openness
and their
desire
to
constantly move forward. Dark blue represents their deep engineering and
technological base reinforcement. Red in colour represents the swoop to highlight
the warmer, more human elements of their technological expertise. Infineon
Technologies Malaysia is one of the shareholders of Infineon Technologies AG,
Neubiber, Germany.
It was formerly known as Siemes Melaka. It started as Siemes Components in
1973 at UMNO Building, Jalan Hang Tuah, Melaka. The company started its
operation with 50 employees and produce transistor mainly used in amplifiers and
receives. The company is then constantly expand its manufacturing facilities by
adding new product line and investing in state-of-the-art technologies to futfill its
customers demand.
In 1974 Siemens Melaka shifted to Free Trade Zone Batu Berendam. The company
name was changed to Siemens Components (Advanced Technologies) Sdn. Bhd in
1981 and Infineon Technologies (Integrated Circuits) Sdn Bhd in 1989. On third of
may in 1999, the name was changed again to Infineon Technologies until now. On
the 13th March 2000, the compony succeeded to be listed in New York Stock
Exchange. Now, Infineon has carved its name in the world by obtaining the 10 th
largest semiconductor company.
At present, the company manufactures semiconductor and provides system
solutions for automotive, industrial and multimarket sectors for applications in
communication with a total workforce of approximate 7,000 people. Discrete
Semicondctors, Power semiconductors, Logic products and Sensor products are four
main products from Infineon. The products from Infineon are able to stand out for
their reliability, excellence quality and their innovative.
The mottos of Infineon are Never stop Thinking, Win Together, Strive for Excellence
in People and Leadership and Act Entrepreneurially for the Sake of Customers.
The vision of Infineon Technologies is to shape microelectronics by creating
innovative products, leading edge solutions and services for the better benefits of
their customer and shareholders.
The mission of Infineon is to create manufacture and market the industrys most
advanced microelectronics products. They create and maximize value for their
customers, shareholders and employees. They built upon out of technological
strength to offer our customer a wide range of leading edge solution emphasizing
communication, computer, chip card and the automotive applications. They attract
the best talent worldwide and translated advanced technologies into value for their
customer and shareholders. Infineon Technologies motto is We Never Stop
Thinking.
HRLD Briefing
On the first day of industrial turning, I reported at Human Human Resources
Learning & Development (HRLD). The staff from HRLD inform us about Infineon
Technologies details and policy, lunch hour break, allowance formula andworking
time. The staff nametage and car sticker can be obtained from the Security
Department ID Room
Machines Training
Each machines in the lab is handled by an engineer from the FA team. At first, the
working principle and the operation of each machine were trained by my superviser.
However, we are still required to undergo an official training from the machine
owner. After we have prove to them that we are able to handle the machine
independently without any mistake, then we will have the permission to use the
machine for failure analysis.
Theory Trainings
Electrostatic discharge training, chemical safety training, laser safety training and
radiation training were arraged by superviser throughout the whole industrial
training. For some machines such as laser and x-ray, an official training from the
machine owner is insufficient. A safety training given by the HRLD department is
compulsory to permit the machine usage.
training before we can enter the chemical lab and perform chemical analysis.
Failure Anlaysis
Devices that do not conform to its expected requirements are known as failure.
Failure analysis team serve to identify the cause of the failure. The failure devices
will be examined through various method. At first, the device information and
background will be provided by the requestor in a requisition form and the parts
submitted has to be protect by ESD damage. The Infineon Ifact (Infineon Failure
Analysis Collaboration Tool) system will register the device as they are received and
assign a identification number for the analysis. A review of the data and history is a
conscious step to prevent waste of effort, time lost and most importantly loses of
failure evidence. Request from customer FAR which has the higher priority has a
two days of cycle time. The cycle time for overall FAR is targeted to be roughly five
days. The analysis process can be categorized into two different types, destructive
test and non destructive test. Examples of non destructive test are external visual
inspection, SAM, X-ray, bake treatment and curve tracer while the destructive test
include SEM, elemental analysis, internal inspection, dye penetration test and
sample preparation. After the analysis is completed, the result will be sent to the
requestor using the Ifact system. Conclusion must be formulated before publishing
the results. All kinds of treatments such as desoldering of failures from PCB, tested
or verified failures using production testers done by the FAR Engineers must be
reported.The final stage will be the report compiling.
Defects
The example of the defects include edge chipping, loopoing problem, necking, ball
bond lifting, broken wire, die attach void, foreign material shorting across the pin.
Cratering defect is the silicon damage under the bond pad. Contamination are
usually happened during the production process or human error. Delamination or air
gap can be caused by two materials with different coefficient of thermal expansion,
moisture and mechanical and the effect of expand and contract leading to stress.
Die scracting and broken die are due to mechanically damaged. It may cause
electrica failure and corrosion. Whisker, a needle like crystalline structures of tin
that form and grow on surfaces can also be counted as one of defects.
Dye penetration
Delamination is one of the common defects in the semiconductor.
Ultrasonic
microscopy, SAM or SAT and micro sectioning followed by visual inspection followed
by visual inspection are ways to detect the delamination. Dye penetration is one of
the way to revealing this defect, it is done by using the liquid-fluorescent penetrant
dye. It is a mixture of low viscosity and anaerobic liquid penetrant (Resinol),
fluorescent powder (Yellow Dye G) as well as anaerobic accelerator. The sample will
be pressurized in the chamber for few hours after immersed in the fluorescent dye.
This is done to ensure the dye will seep into the moisture path of the device
package. Next, the sample will proceed to bake treatment for curing of the
fluorescent dye and then follow by microsectioning. Defects of the sample can be
studied and inspected under UV microscope by increase the brightness to the
maximum and adjusting the exposure time to 2 or higher.
echoes or signal while the detector performs gate setting and measure the echo
height within the gate and time of flight.
SAM can be used to evaluate the die attach integrity, detection of voids in the
molding compound, delamination at the interfaces of two distinct layers as well as
the identification of cracks in the die/molding compound. In the SAM, images are
being generated through mechanically scanning a transducer in a raster pattern.
Acoustic lens assembly at frequencies between 10-230MHz will generate a focused
spot of ultrasound. Water will acts as a coupling medium and help to transmit the
ultrasound to the sample. Working frequency for SAM is 100MHz to 2GHz. The
resolution for SAM is in the range of light microscope and the limitation of
penetration depth of the acoustic wave is few microns, depending on the material
and the frequency used. The higher the frequency the smaller the spot size. By
selecting the colour maps to red,yellow,black and white, the delamination defect of
devices can be noticed easily.
When propagates through two distinct materials, the SAM wave will be subjected to
the strength of transmitted and reflected ultrasound at an interface which are
governed by the acoustic impedance of the materials on each side of the interface.
Acoustic impedance is the product of density and velocity of the ultrasound.
Micro sectioning
Micro sectioning is a process involves the cutting along or across the sample at one
plane of interest for inspection and analysis purpose. It falls under the destructive
test group. There are 2 types of encapsulants, demotec powder & liquid are used
for short curing time whereas epofix resin & hardener are used in long curing time.
Sample arrangement is essential in the micro sectioning process. The sample is first
placed on a flatten plasticene or sample clip. It is then enclose with sample mould.
Resin is prepared in the paper cup. The resin will be added into the sample mould
inside a impregnation vacuum chamber for slow cure resin. Nevertheless, the resin
is straight away pouring into the mould for fast cure resin. The pouring process is
carried out slowly in a vacuum condition in order to prevent the presence of air
bubbles which will affect the inspection or analysis later. The resin is left at one side
for hardening before taken out from the mould.
4
Decapsulation
Both total decapsulation & window decapsulation are categorized under destructive
test. The process involves the removing of mould compound, the plastic material
that encapsulated the semiconductor chip and its connecting wires. Laser or fuming
nitric acid and sulphuric acid are methods to remove the mould compound.
Chemical
For chemical decapsulation, sample will be soldered onto a metal strip to hold the
device during decap process. The ratio of part fuming HNO 3 and H2SO4 are then
prepared. The metal strip is then immersed into a beaker containing the mixture at
70oC. DI water is used to wash the sample. Acetone helps to solidify the small
particle or the removed mould compound in the sample. The sample is then dry
with compressed N2 gas. The process will be repeated if the balance of compound
4
still found on the chip surface. Window decapsulation is a process making a shallow
opening on the top surface while the die is still sitting within the opening. The
sample is placed on top of a heated block surface. Fuming HNO 3 will be added drop
by drop until the interested area is fully exposed. However the next drop will only
be added after one or two second to ensure the acid reaction with the compound.
Furthermore, the cratering check, intermetallic check, die or ball bond lifting and
sample etching require different types of chemical and acid. All the process must be
done in fuming hood chamber with appropriate PPE such as eye mask, safety shoes
and gloves. Chemical use also applicable for imide remove, wire remove, die
remove as well as die pad remove.
Laser
For laser decapsulation, it is only applicable to remove certain type of sample; most
in combination with subsequent wet etch treatment, leads to novel application for
package preparation tasks. The process cannot be directly observed and the end
point can only be obtained by trial and error. The operative mechanism during
ablation of plastic packages with laser light is highly complexity as various
interaction of sample and laser light could happen. Multiple mechanisms such as
simple thermal heating, evaporation, pyrolysis and photolysis can be detected.
Mechanism in ablation means the inception of vigorous mechanical spalling of the
sample at the ablation threshold, followed by the physical ejection of the ablated
material. The laser type used in the lab is power line RSM, accompany by laser
medium Nd: YVO4, diodenpumped, and water/Air-WT as the cooling unit. The puls
frequency start from 5 kHZ to 80 kHz while the traverse speed range from
130mm/s to 250mm/s. Each panel will be penetrated with a fixed current but
different puls frequency and traverse speed. Combined decapsulation will only be
done if the package is high aspect ratio, small chip package and copper wire
package. Laser and chemical decap are used in the combined decapsulation.
Scanning Electron Microscope ( SEM )
Air-tight door is designed to ensure no leakage in the SEM. When the air is vented
from the SEM, an electron gun will emits a beam of large and high energy electrons
and travels downward. The magnetic lenses are used to focus the electrons to a
very fine spot in order to obtain a high magnification of hundred thousand times
and image of 4nm resolution. The scanning system will scan the beam over the
sample in a television type raster. A set of scanning coils are placed at the bottom
of the SEM to move the focused beam and forth across the specimen, row by row.
Secondary electrons are being released from its surface when the electron beam
hits each spot on the sample. The detector counts the electron and sends the
signals to the amplifier. The number of electrons from the sample is then converted
to final image.
The source used by SEM is normally tungsten or Lanthanum hexaboride LaB6.
Beam of electrons with 30 micron diameter are produced to obtain magnified
images. The size and shape can be obtained by scanning the surface of the sample
using beam, therefore SEM shows very detailed 3-dimensional images. However the
images created are rendered black and white due to the absence of light wave. The
probe current which also the penetration rate is normally set to be 10. The voltage
analysis for normal analysis is usually 15ekV whereas 5ekV for surface analysis.
The sample stage wil adjusted to below 30mm from the detector. The shorter the
walking distance, the better the quality of the images. Before unloading the sample,
the chamber must be vented and the stage must return to its original position.
Images will be focus at a magnification higher than the requirement to ensure a
good quality.
Sample or unit needs to undergo pre-treatment before entering the SEM in order to
withstand the vacuum condition and prevent charging effect. They must be made
conductive as the SEM illuminates them with electrons. For Biological specimens,
they need to be dried in a special way to prevent them from shrivelling. SEM
samples can be made conduct electricity by using sputter coater.
1 um diameter are being produced from the electron source. The beam will then
scan across the sample and causes the release of secondary electrons. The
secondary electrons are collected to form a 3D image of the sample and the
images resolution is better than 1.5nm. The lower the scanning speed, the better
the quality of the images. The magnification of this machine ranging from few
hundred times to several hundred thousand times. The FESEM machine must
always in a highly vacuum condition as any leakage will cause the failure of the
machine. The loading and unloading is manually operated and must be handled
with care as the sample might drop to the bottom of the machine. The sample for
FESEM must also be conductive and have a good grounding. FESEM can be used to
observe the surface morphology of the device because the magnification is roughly
20,000x which can be easily reach by FESEM. At high magnification, the beam
alignment, x and y line setting is usually adjust for a better quality of result.
Sputter Coater
The process to deposit a thin film on the sample is named as sputtering. It is done
by applying a high voltage across a low pressure gas, Argon to create a plasma
condition which contains electrons and gas ions in a high energy state. Erosion
occurs when the material are bombarded with fast heavy particles. Energized
plasma ion hits the desired coating material which located at top and causes the
atoms with sufficient energy to transfer and bond with other material. The
sputtered atoms will then condense on the surface and coat the sample. The
sputtering process happens in the conditions of a gaseous glow discharge between
an Anode and Cathode. The electrons are emitted from the cathode whereas the
positive ions are produced from gas molecules due to secondary electron emission.
Sputter Coater can be improved by using a suitable gas and target material. The
sputtering process will increase the electrical conductivity of a specimen. The
common target materials are gold, gold-palladium, palladium, platinum, nickel or
silver. Argon is used due to its relatively high atomic weight, providing a suitable
source of ions for effective bombardment of target material. Nitrogen gas is another
choice for target material but excessive discharge times or higher plasma currents
are needed to obtain the same results as Argon gas.
The sputtered sample must not exposed to surrounding air for long as the air are
highly reactive ions and will cause the sample to oxidize. The coating thickness can
be measured from the equation d = KIVt. Sputter coater normally operates at 800V
DC. The HV voltage is applied between the cathode/ target and the base plate/
anode.
d=coating thickness in Angstrom
k = experimentally determined constant that based on the metal being
sputtered, the gas being used
I= plasma current in mA
V= applied voltage in kV
T = sputtering time in s
sample are closer, and the optimum working distance ranging from 22-24 mm.
Besides, the specimen is preferred to place flat and not to be tilted. The sample
that will proceed to EDX analysis should not be sputter as it might affect the
elemental analysis. However, a 15 second of sputtering time will be applied if the
sample is non conductive.
Noise is often observed in the result. This is because noise is strongly influenced by
the FET. However, low noise is needed to distinguish low energy x-rays, for instance
beryllium. Sometimes, the noise in the EDX analysis will shows a inaccurate data.
The K alpha value of each element can be used to confirm the elemental analysis.
This can be done by altering the voltage applied for EDX.
Input rate simply means the approximate rate of photons striking the detector and
is adjustable by the beam current. The acquisition rate, output rate means how fast
the system can accumulate the spectrum counts, the rate of x-ray data leaving and
entering. The spectrum counts will affect the statistical precision and the limits of
detection. The dead time % shows the percentage of time for which the pulse
processor is unavailable for further counting. The higher process time will also yield
a higher dead time%.
X-Ray
X-ray radiography is considered as a non-destructive analysis. Sample and its
failure mode will not be altered or affected under x-ray analysis. It is suitable for
the verification of the construction inside a sample depending on the material
density differences. Image contrast is given based on different absorption as well as
thickness.
A focused electron beam will creates a point source of x-rays on the Al anode and a
quartz crystal monochromator will refocuses the x-ray beam onto the sample. The
scanning of the electron beam will trigger the scanning of the x-ray beam.
Absorption is proportional to material thickness, third potency of atomic number
and material density. For example, dense materials are more opaque to x-ray since
the penetration is limited through metals as compared to ceramics and polymers.
Besides that, minor defects, delamination, cracks and disbands cannot be observed
4
under x-ray due to the non-absorbing properties of air. X-ray machine such as Fein
Focus X-ray and Nikon XTV 160 with CT are mainly use for to detect unwanted
foreign material inside the sample, internal open circuits, sagging or sweeping wire
defects, die attach voids, mould compound voids, shorts and changes in alignment
within package. The Geometrical magnification of X-ray machine can up to 2000
times and the spatial resolution is in micron meter range.
Die Probing
Die Probing is meant for evaluation and troubleshooting of complex, high density
integrated circuits where the electrical contact to submicron geometric patterns is
needed. For LC thermograph analysis, liquid crystal must be applied to the sample
before locating the probe needles to the interest point. Positioning of the probe
needles can be done with the help of the x,y,z control of the probes and the high
magnification optical lens. The wires are then connected to the respective socket of
the curve tracer to electrically bias the sample under the test.
Curve tracer
The electrical test verification is done with curve tracer and die probing. The sample
is first placed at the die probing stage and the probe needles will be placed at the
interest point. The coonector from die probing will then connect to the correct
socket of the curve trace to electrically bias the device under the test. Proper
adjustment of voltage and ampere are required to produce a graph for comparison.
This will help to differentiate a good device and a bad device.
Safety Trainings
Laser safety training, electrostatic discharge (ESD) training, chemical safety
training and radiation training were provided during the industrial training. The
purpose of thet trainings is to improve the work quality, develop good quality
product as well as produce trained certified and competent employees. The training
4
enable the employees to ensure their own safety, understand more about the risk
and hazard, the safety precaution and the treatment.
There are four classes of laser, 1 ,2 3a, 3b and 4. The classification is based on the
energy produced, range of spectrum and the disclosure rate. The application include
holography, treatment material, alignment, measurement, operation, marking and
technology.
All laser must be labelled accordingly to their clases. Skin and eye
can be damaged easily by the laser equipment. Eye wear and interlocks are
provided to minimize the injuries.
ESD is a rapid transfer of electrostatic charge between different bodies at different
potential. Contact pressure, speed of separation , relative humidity and type of
surfaces are factors that determine the magnitude and polarity of charges. ESD risk
assessment must be done to protect the devices from ESD damage. Huamn body
model, machine model and charged devide model are example of ESD models. The
footwear tester with magnetic controlled door and senor were installed at the
entrance door for safety precaution
During the chemical safety training, the acts and laws related to chemical were
studied.
Skills Gained
4
the continuous alarm rings. Emergency routes and assembly areas must be
provided at each building.
FA safety policy
Safety, Health & Environment (SHE) report is compulsory for any machine or
equipment. Inspector will be assigned to examine the machine based on
Environmental Quality Act 1974, Environmental Quality (Clean Air) Regulations
1978, Environmental Quality (Scheduled Waste) Regulations 1989, Environmental
Quality (Industrial Effluents) Regulants 2009 and etc. Safety and Health related to
Occupational Safety and Health Acts and Factories and Machinery Acts must also be
checked by the inspector. Workplace Risk & Hazard Assessment which includes all
kinds of potential hazards such as chemical in health and physical aspects,
mechanical, electrical, ionizing radiation, noise, heat and others must be considered
well and attached in the SHE report.
Work instruction is one of the safety policy required in the company. The purpose,
scope related specification, equipment used, material used and the maintenance
should be prepared. Besides that, the description of workflow and method must be
mentioned in the work instruction. Safety such as authorization, precautions,
chemicals, additional information and emergency should also be included in the
documents. The waste disposal for solid waste is another one of the requirements
for work instruction.
All
SHE
report,
machine
inspection
checklist,
workplace
risk
and
hazard
assessment, work instruction, and other machine buy off documents will then be
stored in a system, DOK28.
Chapter 4: Conclusion
These twelve weeks of the industrial training programmed at Infineon Technologies
have been a highly enriching experience for me. Throughout my internship here, I
gained lots of useful knowledge and experience and I willing to learn more when
graduate from my studies. The working environment in Infineon Technologies is
very exciting as most of colleagues especially in FA 4 are very friendly and helpful.
The departmental workforces are willing to offer guidance and technical assistance
to me in performing my routine activities during my training at the company. I have
gained useful working experience from the company as this is essential for me to
instill myself with the positive character taken by the employees.
Moreover, I have been given a chance to hands on SEM, FESEM, SAM, X-ray, Laser,
Die probing, Curve tracer, Sputter Coater, EDX, optical scope and more to perform
analysis task. At the same time, I learnt to interpreate findings in order to
formulate results regarding the cause of failure. Through my daily responsibility, I
am able to apply theory into practical and develop my interpersonal skills which are
very useful in fostering good relationship among my colleague.
I faced some problems regarding the usage of machine in the lab. Priority was
given to the permenanat staff. As a results, my work load over the limit and the FA
cycle time achieved the due date. I need to come expedite my work to settle the
tasks given before the due date. However, skills such as punctuality, teamwork,
time management, priority management and responsibility developed during the
training enable me to encounter the problems.
As the technology grows rapidly, more critical thinking engineer are needed to meet
and come up with the increasingly dynamic industry, especially after the economic
down turn, and I do believe the experience gained right here would help me a lot
when my coming future.
Lastly, it has been great practical training in Infineon Technologies, especially in
Quality Management Department. Since here is really a good place and opportunity
for me to expose to the actual working environment that is significantly different
from the university life.
References
Appendix
EFI image
Fluorescence image
MIA image
SAM machines
Isomet Cutter
Grinding machine
SEM
EDX
Polishing Machine
FESEM
Sputter Coater
4
X-ray machines
Die Probing
Curve Tracer
Oven