2N5087

Amplifier Transistor
PNP Silicon
Features

These are PbFree Devices*

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3 COLLECTOR

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

50

Vdc

CollectorBase Voltage

VCBO

50

Vdc

EmitterBase Voltage

VEBO

3.0

Vdc

Collector Current Continuous

IC

50

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

W
mW/C

TJ, Tstg

55 to +150

Symbol

Max

Unit

Thermal Resistance, JunctiontoAmbient

RqJA

200

C/W

Thermal Resistance, JunctiontoCase

RqJC

83.3

C/W

Operating and Storage Junction

Temperature Range

2
BASE
1 EMITTER

TO92
CASE 29
STYLE 1
1

12

3
STRAIGHT LEAD
BULK PACK

THERMAL CHARACTERISTICS
Characteristic

3
BENT LEAD
TAPE & REEL
AMMO PACK

MARKING DIAGRAM
2N
5087
AYWW G
G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Package

Shipping

2N5087G

TO92
(PbFree)

5000 Units / Bulk

2N5087RLRAG

TO92
(PbFree)

2000/Tape & Reel

Device

For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2013

April, 2013 Rev. 5

Publication Order Number:

2N5087/D

2N5087
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic

Symbol

Min

Max

50

50

50

50

250
250
250

800

0.3

0.85

40

4.0

250

900

2.0
2.0

Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

CollectorBase Breakdown Voltage

(IC = 100 mAdc, IE = 0)

Collector Cutoff Current

(VCB = 35 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

V(BR)CEO
V(BR)CBO
ICBO
IEBO

Vdc
Vdc
nAdc
nAdc

ON CHARACTERISTICS
DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1)

CollectorEmitter Saturation Voltage

BaseEmitter On Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

hFE

VCE(sat)
VBE(on)

Vdc
Vdc

SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
CollectorBase Capacitance
SmallSignal Current Gain
Noise Figure

(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

(IC = 20 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 10 Hz/15.7 kHz)

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

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2

fT
Ccb
hfe
NF

MHz
pF

dB

2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10
7.0
IC = 10 mA

5.0

In, NOISE CURRENT (pA)

en, NOISE VOLTAGE (nV)

1.0
7.0
5.0

BANDWIDTH = 1.0 Hz
RS 0

30 mA
3.0

100 mA
300 mA

1.0 mA

2.0

BANDWIDTH = 1.0 Hz
RS
IC = 1.0 mA

3.0
2.0

300 mA

1.0
0.7
0.5

100 mA
30 mA

0.3
0.2

1.0

10 mA

0.1
10

20

50

100 200
500 1.0k
f, FREQUENCY (Hz)

2.0k

5.0k

10k

10

20

50

1.0M
500k

BANDWIDTH = 1.0 Hz

200k
100k
50k
20k
10k

0.5 dB

5.0k

1.0 dB

2.0k
1.0k
500

2.0 dB
3.0 dB

200
100
20

30

50 70 100
200 300
IC, COLLECTOR CURRENT (mA)

1.0M
500k

BANDWIDTH = 1.0 Hz

20k
10k
0.5 dB

5.0k

1.0 dB

2.0k
1.0k
500

2.0 dB
3.0 dB

500 700 1.0k

5.0 dB
10

20

RS , SOURCE RESISTANCE (OHMS)

Figure 3. Narrow Band, 100 Hz

1.0M
500k

10k

200k
100k
50k

200
100

5.0 dB
10

5.0k

Figure 2. Noise Current

RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

Figure 1. Noise Voltage

100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)

30

50 70 100
200 300
IC, COLLECTOR CURRENT (mA)

500 700 1.0k

Figure 4. Narrow Band, 1.0 kHz

10 Hz to 15.7 kHz

200k
100k
50k

Noise Figure is Defined as:

NF + 20 log10

20k
10k

0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB

200
100
10

20

30

50 70 100

200 300

en2 ) 4KTRS ) In 2RS2 12

4KTRS

en = Noise Voltage of the Transistor referred to the input. (Figure 3)

In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzmans Constant (1.38 x 1023 j/K)
T = Temperature of the Source Resistance (K)
RS = Source Resistance (Ohms)

5.0k
2.0k
1.0k
500

500 700 1.0k

IC, COLLECTOR CURRENT (mA)

Figure 5. Wideband

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3

2N5087
TYPICAL STATIC CHARACTERISTICS

h FE , DC CURRENT GAIN

400

TJ = 125C
25C

200

-55C
100
80
60

VCE = 1.0 V
VCE = 10 V

40
0.003 0.005

0.01

0.02 0.03

0.05 0.07 0.1

0.2 0.3
0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)

3.0

5.0 7.0

10

20

30

50 70 100

1.0

100
TA = 25C
IC, COLLECTOR CURRENT (mA)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. DC Current Gain

0.8
IC = 1.0 mA

0.6

10 mA

50 mA

100 mA

0.4

0.2

0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)

TA = 25C
PULSE WIDTH = 300 ms
80 DUTY CYCLE 2.0%
300 mA

200 mA
150 mA

40

100 mA

20

50 mA

0
5.0 10

20

5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V, TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C
V, VOLTAGE (VOLTS)

1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)

40

Figure 8. Collector Characteristics

1.4

0.2

250 mA

60

Figure 7. Collector Saturation Region

0.1

IB = 400 mA
350 mA

50

1.6
*APPLIES for IC/IB hFE/2
0.8
*qVC for VCE(sat)

- 55C to 25C
0.8
25C to 125C
1.6

2.4
0.1

100

25C to 125C

Figure 9. On Voltages

qVB for VBE

0.2

- 55C to 25C

0.5 1.0 2.0

5.0
10 20
IC, COLLECTOR CURRENT (mA)

Figure 10. Temperature Coefficients

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4

50

100

2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200

200

100
70
50
30
tr

20
10
7.0
5.0
1.0

100
70
50

tf

30

td @ VBE(off) = 0.5 V

20

2.0

3.0

5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50 70

10
-1.0

100

- 2.0 - 3.0 - 5.0 - 7.0 -10

- 20 - 30
IC, COLLECTOR CURRENT (mA)

- 50 - 70 -100

Figure 12. TurnOff Time

500

10
TJ = 25C

TJ = 25C

7.0
VCE = 20 V

300

Cib
C, CAPACITANCE (pF)

f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

Figure 11. TurnOn Time

5.0 V
200

100

5.0

3.0
2.0

Cob

70
50
0.5 0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

1.0
0.05

50

0.1

0.2

0.5

1.0

2.0

5.0

IC, COLLECTOR CURRENT (mA)

VR, REVERSE VOLTAGE (VOLTS)

Figure 13. CurrentGain Bandwidth Product

Figure 14. Capacitance

7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3

hoe , OUTPUT ADMITTANCE (m mhos)

VCE = -10 Vdc

f = 1.0 kHz
TA = 25C

10

0.2
0.1

10

20

50

200

20
hie , INPUT IMPEDANCE (k )

VCC = - 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25C

ts

300
t, TIME (ns)

t, TIME (ns)

1000
700
500

VCC = 3.0 V
IC/IB = 10
TJ = 25C

100
70
50

VCE = 10 Vdc
f = 1.0 kHz
TA = 25C

30
20
10
7.0
5.0
3.0

0.2

0.5

1.0 2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)

50

2.0
0.1

100

Figure 15. Input Impedance

0.2

0.5 1.0 2.0

5.0
10
20
IC, COLLECTOR CURRENT (mA)

Figure 16. Output Admittance

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5

50

100

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

2N5087
1.0
0.7
0.5

D = 0.5

0.3

0.2

0.2
0.1

0.1
0.07
0.05

FIGURE 19

0.05
P(pk)
0.02

0.03
0.02

t1

0.01

0.01
0.01 0.02

SINGLE PULSE

0.05

0.1

0.2

0.5

1.0

t2
2.0

5.0

10

20
50
t, TIME (ms)

100 200

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN569)
ZqJA(t) = r(t) w RqJA
TJ(pk) - TA = P(pk) ZqJA(t)

500 1.0k 2.0k

5.0k 10k 20k 50k 100k

Figure 17. Thermal Response

IC, COLLECTOR CURRENT (mA)

400
200

100 ms

100

TC = 25C
dc

60

1.0 s

TA = 25C

40

dc

20

TJ = 150C

10

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

6.0
4.0

The safe operating area curves indicate ICVCE limits of

the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk)
may be calculated from the data in Figure 17. At high case
or ambient temperatures, thermal limitations will reduce the
power than can be handled to values less than the limitations
imposed by second breakdown.

10 ms

1.0 ms

2.0

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

40

4.0
6.0 8.0 10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

A train of periodical power pulses can be represented by

the model as shown in Figure 19. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 17 was calculated for various
duty cycles.
To find ZqJA(t), multiply the value obtained from Figure
17 by the steady state value RqJA.
Example:
The 2N5087 is dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C.
For more information, see ON Semiconductor Application
Note AN569/D, available from the Literature Distribution
Center or on our website at www.onsemi.com.

Figure 18. ActiveRegion Safe Operating Area

104
IC, COLLECTOR CURRENT (nA)

VCC = 30 V
103
ICEO

102
101

ICBO
AND
ICEX @ VBE(off) = 3.0 V

100
10-1
10-2
- 40 - 20

+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160

TJ, JUNCTION TEMPERATURE (C)

Figure 19. Typical Collector Leakage Current

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6

2N5087
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AM
A

STRAIGHT LEAD
BULK PACK

R
P
L
SEATING
PLANE

X X

G
J

H
V

C
SECTION XX

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM
A
B
C
D
G
H
J
K
L
N
P
R
V

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---

BENT LEAD
TAPE & REEL
AMMO PACK

P
T
SEATING
PLANE

X X

J
V
1

C
N

SECTION XX

NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
J
K
N
P
R
V

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
--2.04
2.66
1.50
4.00
2.93
--3.43
--STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf . SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different
applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components
in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product
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fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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PUBLICATION ORDERING INFORMATION

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2N5087/D