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Roll No.
M. TECH.
FIRST SEMESTER EXAMINATION, 2014-15
SEMICONDUCTOR DEVICE MODELING AND
CIRCUIT SIMULATION
1 P.T.O.
GEC-101 GEC-101
(b) The current flowing in a certain PN junction at room temperature is (b) Explain the sub-threshold slope for a MOSFET and determine
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2 x 10 A, when a large reverse bias voltage is applied. Calculate formula for the same. Also derive the equation for minimum sub-
the current when a forward voltage of 0.1V is applied across the threshold slope.
junction. (c) An N-channel MOSFET is operated with its source and body
(c) Explain the impact of base width modulation and kirk effect on the terminals grounded, and 1V applied to the gate terminal. Determine
performance of BJT. the drain current for applied drain potential=0.2V and 5V. Also,
(d) What is the Early effect? How is it considered in the mathematical determine the bias to be applied to the body terminal which would
make the drain current=0. VTNO=0.7V, KN'=40A/V , =0.4V ,
2 0.5
model for the collector current of a BJT that is biased in the forward-
active region? 2F=0.6V, W=10m, L=1m. Use Level-0 model.
(e) What is channel length modulation effect? How the voltage current
characteristics are affected because of this effect? 5. Attempt any Two of the following questions: 10 x 2 = 20
(f) What is the latch up problem that arises in bulk CMOS technology? (a) What is small signal model of an MOSFET? Describe the topology
How is it overcome? of a small-signal equivalent circuit model of the MOSFET at high
frequency.
3. Attempt any Two of the following questions: 10 x 2 = 20
(b) Write short note on the following:
(a) Derive the model equation for the Eber Moll's level-1, level-2 and
(i) What are the objectives of simulation?
level-3 model of BJT. Also mention limitations of each level.
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(ii) Various simulator commercially available.
(b) Describe the Gummel-Poon model of a p -n-p BJT in detail. Also
(iii) Limitation of simulation.
explain the components of base charge.
(iv) MOSFET geometry in SPICE.
(c) Describe the procedure to extract the following model parameters of
(c) What do you know about logic and timing simulation? Explain in
an npn-BJT. Do not calculate anything. Explain your reasoning
detail with suitable diagram.
using I-V plots.
(i) Reverse saturation current IS.
(ii) Reverse current gain RM.
(iii) Bulk collector ohmic resistor rC.
(iv) Reverse knee current IKR.