Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6

By D. A. Neamen Exercise Solutions

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Chapter 6
Exercise Solutions
(iii) p 5 10 7 5 10 14 1 e 5 / 1
4.966 10 14
cm
Ex 6.1
3
6
n 1015 e t / 10
R n cm 3 s 1
(iv) p 5 1014 1 e
no 10 6 3
5 10 14 cm
10 15
For t 0 , R n 6 10 21 cm 3 s (b) p max 5 1014 0.01 N d
10 Yes, low-injection condition is met.
1
_______________________________________
t 1 s,
10 15 e 1 / 1
R n 6
3.68 10 20 cm
10 Ex 6.4
3 s 1

t 4 s,
(a) L n
D n no 25 5 10 7 1/ 2

3.536 10 3 cm
10 15 e 4 / 1
R n 6
1.83 1019 cm or L 35.36 m
10
3 1
(b) n 1015 e x / Ln ( x 0 )
s
t 10 s, or n 1015 e x / Ln ( x 0 )

10 15 e 10 / 1 (i) n 10 15 e 0 10 15 cm 3
R n 6
4.54 1016 cm (ii) n 10 15 e 30 / 35.36 4.28 10 14
10
cm 3
3 s 1
_______________________________________ (iii) n 1015 e 50 / 35.36 2.43 10 14
cm 3
Ex 6.2 (iv) n 10 15 e 85 / 35.36 9.04 10 13
(a) 10 14 e t / 50 1014 e 1
cm 3
t 50 ns
(v) n 1015 e 120 / 35.36 3.36 10 13
(b) 10 14 e t / 50 10 13
cm 3
10 14

t 50 10 9 ln 13
1.15 10 7

_______________________________________
10
s Ex 6.5
or t 115 ns
_______________________________________ e
t / p 0

x p 0t 2

p x, t exp
Ex 6.3
4D t p
1/ 2
4D p t

(a) p t g po 1 e t / po
(a)
p 0 t 400100 10 7 4 10 3 c

5 10 21
10 1 e
7 t / po
m
5 10 14
1 e t / po
or 40 m
(i) x 20 m.
(i) p 0 5 10 1 e 0
14 0

(ii) p 10 7
5 10 1 e
14 1 / 1
0.36788 2 10 3 2

3.16 10 14
cm p exp
3.545 10 3 4 10 6
3
38.18
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6
By D. A. Neamen Exercise Solutions
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(ii) x 40 m, Figure 5.3, p 400 cm 2 /V-s.
0.36788
p exp 0
3.545 10 3 e p N a 1.6 10 19 400 2 1016
103.8 1.28 ( -cm) 1
(iii) x 60 m,
Then d

11.7 8.85 10 14



p
0.36788
exp

2 10 3 2

8.09 10 13 s
1.28

3.545 10 3 4 10 6
or d 0.809 ps
p 38.18 _______________________________________
(b) x 40 m
(i) t 5 10 8 s, Ex 6.7
p o N a N d 10 16 3 10 15

p
0.60653
exp
2 10 3

2


7 10 15 cm 3

2.50663 10 3 2 10 6
32.75 n2
no i

1.5 1010 2

3.214 10 4 cm
po 7 1015
3

(a) In thermal equilibrium,

po
7 E Fi E F kT ln

(ii) t 10 s,
ni
0.36788
p exp 0
3.545 10 3 7 10 15
103.8 0.0259 ln 10

1.5 10
(iii) t 2 10 7 s,
0.33808 eV

p
0.1353
exp

4 10 3 2


5.013 10 3 8 10 6
3.65 (b) Quasi-Fermi levels,
_______________________________________
p o p
E Fi E Fp kT ln
Ex 6.6 n i
(a) For N d 5 1015 cm 3 in GaAs,
from 7 1015 4 10 14
Figure 5.3, n 7500 cm 2 /V-s.
0.0259 ln

1.5 10 10
0.33952 eV

e n N d 1.6 10 19 7500 5 10 15 n o n
6 ( -cm) 1 E Fn E Fi kT ln
ni
Then d

13.1 8.85 10 14


6
3.214 10 4 4 10 14
1.93 10 13 s 0.0259 ln

1.5 10 10
or d 0.193 ps
0.26395 eV
(b) For N a 2 10 16 cm 3 in silicon, _______________________________________
from
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6
By D. A. Neamen Exercise Solutions
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Ex 6.8 (i) For s , p 0 0
n-type; n o 10 15 cm 3 , (ii) For s 0 , p 0 g p 0 ,
p o 2.25 10 5 cm 3
p x constant
n p 10 14
cm 3 , _______________________________________
no po 5 10 7
s
We have Test Your Understanding Solutions
R
n
o n p o p n i
2

po n o n ni no p o p ni
TYU 6.1
(a) p-type; Minority carriers = electrons

1015 10 14 1014 1.5 10 10 2
(b) n t n 0 exp
t



5 10 7
10 15
10 14
no

10
7
Then
5 10 14
t
or n t 1015 exp cm 3

3 1 5 10 6
R 1.83 10 cm s 20
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TYU 6.2
Ex 6.9
(a) p-type; Minority carriers = electrons
p0s
(a) For p 0 s 0 p s p B 0 t
(b) n t g no 1 exp
p0 no


From Equation (6.109),
p x g p 0 Ae
x / Lp x / Lp
Be
As x , p g p 0 10 14 cm 3
10 20 5 10 6 1 exp t
6


5 10
A0 or
As x 0, p 0 B g p 0 t
n t 5 10 14 1 exp
Then p x g p0 1 e x / Lp


6
5 10
(b) p x 0 0 (c) As t , n 5 10 14 cm 3
p 0 p 0 _______________________________________
(c) R R
p0s 0
TYU 6.3
Note: p 0 0 is a result of R . x
_______________________________________ n x p x n 0 exp
Lp

Lp D p po 10 10 6 31.6 10 4

Ex 6.10 cm
Then
se x / Lp

(a) p x g p 0 1

D p L p s n x p x 10 15 exp
x
cm
(i) For s, 4
31.6 10
p x g p 0 1 e x / Lp
3

_______________________________________
(ii) For s 0 ,
p x g p 0 TYU 6.4
(b) n-type; Minority carriers = holes
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6
By D. A. Neamen Exercise Solutions
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dp d p x
J diff eD p eD p
dx dx

1.6 10 10 10 exp
19 15
10

TYU 6.6
4 Using the results from TYU 6.5, we find
(31.6 10 ) 31.6
Then hole diffusion current density
J diff 0.369 A/cm 2
exp t p
x pot 2

p exp
We have 4 D t
p
1/ 2
4D p t
J diff (electrons) J diff (holes)
(a) (i) x p o t
Then electron diffusion current density
J diff 0.369 A/cm 2
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1.093 10 2 386 10 10 6
3
7.07 10
TYU 6.5

exp t po p
exp 1 5
exp
7.07 10 3 2


p 4 10 10 6 1/ 2
410 10
6

4 D t 1/ 2

p
7.07 10 3 2

exp 1 5 73.0 exp
(a)
4 10 10 6 1/ 2
p 73.0 410 10 6
or
(b) p 20.9
exp 5 5
p 14.7 (ii) x p o t
4 10 5 10 6 1/ 2

(c) 3.21 10 3 386 10 10 6

exp 15 5 7.07 10 3
p 1.15
4 10 15 10 6 1/ 2

p 73.0 exp

7.07 10 3 2


(d) 410 10 6
exp 25 5
p 0.120 or
4 10 25 10 6 1/ 2
p 20.9
Now (b) (i) x p o t
x p o t 386 10 t
Then 2.64 10 2 386 10 5 10 6
(a) x 38.6 m 7.1 10 3
(b) x 193 m
(c) x 579 m p 14.7 exp

7.1 10 3 2
(d) x 965 m 410 5 10
6

_______________________________________ or
p 11.4
(ii) x p o t

1.22 10 2 386 10 5 10 6
7.1 10 3

p 14.7 exp

7.1 10 3 2


410 5 10
6

or
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 6
By D. A. Neamen Exercise Solutions
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p 11.4

(c) (i) x p o t

6.50 10 2 386 10 15 10 6
7.1 10 3

p 1.15 exp

7.1 10 3 2

410 15 10
6

or
p 1.06
(ii) x p o t

5.08 10 2 386 10 15 10 6
3
7.1 10

p 1.15 exp

7.1 10 3 2

410 15 10
6

or
p 1.06
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