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6R1MBi100P-160 Diode Module

Diode Module with Brake

Diode:1600V / 100A, IGBT:1400A/75A
Features
Compact Package
P.C. Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit

Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25C unless without specified)
Item Symbol Condition Rating Unit
Repetitive peak reverse voltage V RRM 1600 V
Non-repetitive peak reverse voltage V RSM 1760 V
Average output current IO 50Hz/60Hz sine wave 100 A
Converte

Tc=110C
One cycle surge current IFSM From rated load 1000 A
I2t I2t From rated load 4000 A 2s
Operation junction temperature Tj -40 to +125 C
Collector-Emitter voltage VCES 1400 V
Gate-Emitter voltage VGES 20 V
Collector current IC DC Tc=25C 75 A
Tc=75C 50
Brake

ICP 1ms Tc=25C 150 A

Tc=75C 100
Collector power disspation PC 1 device 360 W
Repetitive peak reverse voltage V RRM 1400 V
Operation junction temperature Tj +150 C
Storage junction temperature Tstg AC : 1 minute -40 to +125 C
Isolation voltage Viso M5 screw 2500 V
Mounting screw torque 2.0 to 2.5 Nm

Electrical characteristics (Tj=25C unless otherwise specified)

Item Symbol Condition Min. Typ. Max. Unit
Fofward voltage V FM Tj=25C, IFM=100A 1.30 V
Co.

Reverse current IRRM Tj=150C, VR=VRRM 20 mA

Zero gate voltage Collector current ICES VGE=0V. V CE=1400V 1.0 mA
Gate-Emitter leakage current IGES VCE =0V. VGE=20V 200 nA
Collector-Emitter saturation voltage VCE(sat) VGE=15V. IC=50A 2.4 2.8 V
Turn-on time ton Vcc=800V 0.35 1.2 s
Brake

tr Ic=50A 0.25 0.6

Turn-off time toff VGE=15V 0.45 1.0
tf RG=25ohm 0.08 0.3
Reverse current IRRM 1.0 mA

Thermal characteristics
Item Symbol Condition Min. Typ. Max. Unit
Thermal resistance Rth(j-c) Converter Per total loss 0.14 C/W
Per each device 0.84
Brake IGBT (1 device) 0.55
Thermal Resistance(Case to fine) Rth(c-f) with thermal compound 0.08 C/W
Diode Module 6R1MBi100P-160

Forward Characteristics O u tp u t C u r r e n t - T o ta l L o s s
300
100
max
90 250

80 typ
Forw ard Current V F(V )

70 200

Total Loss (W)

60
150deg
50 150

40
25deg 100
30

20
50
10
0
0
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 50 100 150
O u tp i t C u r r e n t Io ( A )
Forward Current IF(A)

S u r g e C u rr e n t
O u tp u t C u r r e n t - C a s e T e m p e r a tu r e
1200
130

120 1000
Peak Surge Current IFSM (A)

110
Case Tempreture Tc (deg.C)

800

100

600
90

80 400

70
200
60

0
50
0 .0 1 0 .1 1
0 50 100
T im
O u t p u t C u r r e n t Io ( A )

Tra ns ie nt The rm a l Im p e d a nce [ B ra ke ] Tra nsie nt The rm a l Im p e d a nc e

1 10

FW D
Zth(j-c)(t) (deg.C/W)

0.1 1
Zth(j-c)(deg.C/w)

IG BT

0.01 0 .1

0 .0 1
0.00 1
0 .0 0 1 0 .0 1 0 .1 1 10
0.00 1 0.01 0.1 1 10
Tim T im e (s e c )
e
Diode Module 6R1MBi100P-160

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.) Tj= 125C (typ.)

120 120

VGE= 20V 15V 12V VGE= 20V 15V 12V

100 100
Collector current : Ic [ A ]

Collector current : Ic [ A ]
80 80

10V 10V

60 60

40 40

20 20 8V

8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
VGE=15V (typ.) Tj= 25C (typ.)

120 10

Tj= 25C Tj= 125C

100
8
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]

80

60

40
Ic= 100A

Ic= 50A
2
20 Ic= 25A

0 0
0 1 2 3 4 5 5 10 15 20 25

Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25C Vcc=800V, Ic=50A, Tj= 25C

20000 1000 25

10000

800 20
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Gate - Emitter voltage : VGE [ V ]

Cies

600 15

1000 Coes
400 10

Cres 200 5

100 0 0
0 5 10 15 20 25 30 35 0 100 200 300 400 500

Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]

Diode Module 6R1MBi100P-160

Outline Drawings, mm

90

78.5

4- 6.1 11.75 7 14 7 21 7

C3 0.5

2- 5.5

+ - G E

11
C
23.5

16

32
11
K

11.75 14 14 28.5 3

2.5

2.1 2 x t1 R1

3.4
1.5
6

20.4
17
13

6R1MBi100P-160 JAPAN

Equivalent Circuit Schematic

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