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I D 0.4 mA
VD 1 V
5 1
RD 10 k
0.4 mA
From this circuit we can see that VGD 1 V, which is less than
Vt. Consequently, the channel is pinched off at the drain end.
Therefore, the MOSFET is operating in the saturation or cutoff
modes (not the triode).
2 L 2 L
Substituting
1 A 400
VGS 2
2
0.4 mA 20 106 2
2 V 10
Therefore
VGS 2 1 VGS 2 1
2
or VGS 1 V or 3 V
The first solution is not consistent with our initial assumption of
operation in the saturation mode since it is less than Vt.
Therefore,
VGS 3 V VS 3 V
VS 5 VS 5 3 5
Finally, RS 5 k
IS ID 0.4 mA
VD
1 W
I D nCox VGS Vt
2
In saturation,
2 L
1 100
VGS 2 VGS 2 2
2
or 0.4 103 20 106
2 10
Consequently,
VGS 0 or 4 V
The first solution is not consistent with operation in the
saturation mode since VGS Vt .
Example N27.3 (text Example 5.4). Design the circuit below for
a drain voltage of 0.1 V. Determine rDS. The MOSFET has Vt 1
V and kn W L 1 mA/V2. Neglect ro.
(Fig. 5.23)
With VGS 5 V and greater than Vt, the MOSFET has an
induced channel and is not cutoff.
Next, lets check to see if the channel is pinched off at the drain
end. We can do this two (equivalent) ways. First, with VD 0.1
V then
VGD 5 0.1 4.9 V
which is greater than Vt (= 1 V), so the channel is not pinched
off at the drain. Alternatively, we can compute
VGS Vt 5 1 4 V
which is greater than VDS (= 0.1 V). So again we find that the
channel is not pinched off at the drain.
5 0.1
Then RD k 12.41 k
0.395
V 0.1
and rDS DS k 253
I D 0.395
We could also use (5.13) for this last result, but the work was
already done here. From the text,
1
vDS W
rDS kn VGS Vt (5.13b)
iD vDS small L
vGS VGS
(Fig. 5.25)
For saturation in an enhancement type PMOS device requires
VGS Vtp (induced) or VSG Vtp (induced) (1)
and
VDS VGS Vtp (pinched off) (2)
In words, this last equation states that the drain-to-source
voltage must be less than the gate-to-source voltage plus |Vtp|.
where
VOV p
VSG Vtp (4)
Equation (4) is only valid for a PMOS transistor that has an
induced channel [such that the RHS of (4) is a positive number,
as defined by the LHS].
For the largest RD, remember that the PMOS device remains in
the saturation mode as long as the drain end of the channel is
pinched off.