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REFERENCES

1. Andre Anders and Simone Anders, Working Principle of the Hollow-Anode Plasma
Source, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA
94720.

2. X-ray diffraction (XRD), Barbara L Dutrow, Louisiana State University, Christine M.


Clark, Eastern Michigan University.

3. Low Temperature Epitaxial Growths of III- Nitride Semiconductors on ITO Glass


Substrates, Jonny Tot.

4. Growth analysis

5. Scanning Electron Microscopy (SEM), Susan Swapp, University of Wyoming.

6. http://www.nanoscience.com/technology/sem-technology/how-sem-works/

7. John R Arthur, Surface Science, Department of Electrical and Computer Engineering,


Oregon State University, Corvallis, OR 97331, USA, Volume 500, Issues 1-3, 10 March 2002,
Pages 189-127

8. Metal Organic Chemical Vapor Deposition: Technology and Equipment, John L.Ziklo.

9. Plasma-enhanced Chemical Vapor Deposition of silicon dioxide, optimizing dielectric


films through plasma characterization Arjen Boogaard

10. http://www.plasmaequip.com/WHAT%20IS%20PECVD.pdf

11. https://www.oxford-instruments.com/products/etching-deposition-and-growth/plasma-
etch-deposition/pecvd

12. http://www.meaglow.com/research-reactor/

13. Growth and Characterization of Group III- Nitrides by Migration- Enhanced After Glow
Epitaxy, Rositsa Gergova.

14. Gallium Nitride, Indium Nitride, and Heterostructure Development Using the MEAglow
Growth System, Peter W. Binsted

15. http://www.madsci.org/posts/archives/2001-02/981758142.Ph.r.html

16. http://physics.stackexchange.com/questions/266010/alternate-light-and-

dark-regions-in-cathode-ray-tube

17. Radio Frequency Plasma Sources for Semiconductor Processing, Francis F. Chen.
18. P. W. Binsted, K. S. A. Butcher, D. Alexandrov, P. Terziyska, D. Georgieva, R.
Gergova, and V. Georgiev, InN on GaN Heterostructure Growth by Migration
Enhanced Epitaxial Afterglow (MEAglow), MRS Proc., vol. 1396, Jan. 2012.

19. Lakehead Communications, MEAGlow Semiconductor Research Laboratory


Opens. Lakehead University, Thunder Bay, 2011.

20. A. Fridman, L. A. Kennedy, A. Alexander, A. Lawrence, F. Routledge, and P.


Square, Plasma physics and engineering. Taylor & Francis Routledge, 2004. // need to find this
book
REFERNCES:

1. P. W. Binsted, K. S. A. Butcher, D. Alexandrov, P. Terziyska, D. Georgieva, R.


Gergova, and V. Georgiev, InN on GaN Heterostructure Growth by Migration Enhanced
Epitaxial Afterglow (MEAglow), MRS Proc., vol. 1396, Jan. 2012.

2. Bruce Sween Liley, Michael C. Kelley, Plasma 6 Jan 2016.

3. David B. Grave, Mark J. Kushner, Low Temperature Plasma Science, Department of Energy
Office of Fusion Energy Science workshop on low temperature plasmas, March 2008.

4. Matthew and Richard Bersin, Whats the cause of Crooks Dark Space & striations in
discharge tubes, Jan.2001.

5. Philip D. Rack, Plasma Physics, Department of Microelectronic Engineering.

6. Francis F. Chen, Radio Frequency Plasma Source for Semiconductor Processing,

7. A. Ganguli, R.D. Tarey, Understanding Plasma Sources, Centre of Energy Studies and
Department of Physics, Indian Institute of Technology, India.

8. Andre Anders and Simone Anders, Working Principle of the Hollow-Anode Plasma
Source, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA
94720.

9. John R Arthur, Surface Science, Department of Electrical and Computer Engineering,


Oregon State University, Corvallis, OR 97331, USA, Volume 500, Issues 1-3, 10 March 2002,
Pages 189-127.

10. John L.Ziklo, Metal Organic Chemical Vapor Deposition: Technology and Equipment.

11. Arjen Boogaard, Nijmegen, Plasma- Enhanced Chemical Vapour Deposition of Silicon
Dioxide, Netherlands, 2011.

12. Plasma Enhanced Chemical Vapour Deposition. [Online]. Available:


https://www.oxford-instruments.com/products/etching-deposition-and-growth/plasma-etch-
deposition/pecvd/.[Accessed: 17-Nov-2016]

13. Peter W. Binsted, Gallium Nitride, Indium Nitride, and Heterostructure Development
Using the MEAglow Growth System, Ph.D. diss: Lakehead University, 2014.

14. Jonny Tot, Low Temperature Epitaxial Growths of III- Nitride Semiconductors on ITO
Glass Substrates, Ph.D. diss: Lakehead University, April 2016.

15. R.Gergova, Growth and Characterization of Group III-Nitrides, and Heterostructure


Development Using The MEAglow Growth System, Ph.D. diss: Lakehead University, 2014
16. Darrell Henry, Nelson Eby, John Goodge and David Mogk, X-ray reflection in
accordance with Braggs Law, Louisiana State University, Montana State University,
University of Massachusetts, University of Minnesota.

17. Barbara L Dutrow and Christine M. Clark, X-ray power diffraction (XRD), Eastern
Michigan University, Louisiana State University.

18. Susan Swapp, Scanning Electron Microscope (SEM), University of Wyoming.

19. How an SEM works.[Online]. Available:


http://www.nanoscience.com/products/sem/technology-overview/how-sem-works/.
[Accessed:19-Oct-2016]

20. Lakehead Communications, MEAGlow Semiconductor Research Laboratory


Opens. Lakehead University, Thunder Bay, 2011.

Ppt reference should be incuded for plasma parameters>::

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