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Q.1. (i) How does the intrinsic carrier concentration depend on temperature? Does it depend on
external doping concentration?
(ii) Plot temperature vs. electron concentration for an N-type semiconductor with donor
concentration 1015/cm3. Show all the three regions of
EFi = (Ec +Ev )/2 + {kT ln(Nv/Nc)}/2 for an intrinsic semiconductor, where EFi = Fermi energy
level for an intrinsic semiconductor.
Find deviation of intrinsic Fermi energy level from midgap { (Ec +Ev )/2} energy level for
Q3. 1016 per cm3 phosphorus atoms are introduced in Si giving rise to a donor level ED.
Assuming Eg=1.1eV, NC=2.8x1019(T/300)1.5 cm-3, NV=1.0x1019(T/300)1.5 cm-3, EC-ED=45meV,
ni for Si = 1.5x1010 cm-3, and kT=26meV at 300K, find the values of:
(c) EF at 300K.
(d) EF at 20K.
Q4. A linearly graded junction with a doping distribution described by Nd -Na = ax, where 'a' is
the grade constant denoting the slope of net impurity distribution.
Q5. An ideal silicon pn junction at T=300K is under forward bias. The minority carrier lifetime
is n=10-6 sec and p=10-7 sec. The doping concentration in the n-region is Nd=1016 cm-3. Plot
the ratio of the hole current to the total current crossing the space charge region (depletion layer)
as the p region doping concentration varies over the range 1015 < Na < 1018 cm-3. (Use a log scale
for the doping concentrations)
Q6. For a silicon pn junction at T=300K, assume p=0.1n and n=2.4p. The ratio of the
electron current crossing the depletion region to the total current is defined as the electron
injection efficiency. Determine the expression for the electron injection efficiency as a function
of (a) Nd/Na and (b) the ratio of the n-type conductivity to the p-type conductivity.
Q7. Recombination rate of electrons and holes in the space charge region of a p-n junction is
given by the equation:
2 ( 1)
=
[ + exp( )] + [ + exp( )]
(i) Using suitable assumptions (state the assumptions clearly); prove that the generation
current density in the reverse biased condition is
=
20
1 1
Where, = = 0 , w = width of the space charge region.
(ii) Find the ratio between the generation current density and the ideal reverse saturation
current density and comment on the result.