Mosfet

Represented To : DR.Fawzy Osman

Prepared by : Khaled Belal Mostafa Eltanawy

Mechanical engineering Department,

Mechatronics sub-department
 Contents
1. Introduction
2. Working Principle of MOSFET
3. Types of MOSFET
4. Applications of MOSFET
5. MOSFET Characteristics Curves
6. Rated Parameters
1- Introduction
The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a
semiconductor device which is widely used for switching and amplifying electronic
signals in the electronic devices. The MOSFET is a core of integrated circuit and it
can be designed and fabricated in a single chip because of these very small
sizes. The MOSFET is a four terminal device with source(S), gate (G), drain (D) and
body (B) terminals. The body of the MOSFET is frequently connected to the source
terminal so making it a three terminal device like field effect transistor. The MOSFET
is very far the most common transistor and can be used in both analog and digital
circuits.

MOSFET
The MOSFET works by electronically varying the width of a channel along which
charge carriers flow (electrons or holes). The charge carriers enter the channel at
source and exit via the drain. The width of the channel is controlled by the voltage on
an electrode is called gate which is located between source and drain. It is insulated
from the channel near an extremely thin layer of metal oxide. The MOS capacity
present in the device is the main part
 The
MOSFET can be function in two ways
Deflection Mode

Enhancement Mode

Deflection Mode:

When there is no voltage on the gate, the channel shows its maximum conductance.
As the voltage on the gate is either positive or negative, the channel conductivity
decreases.

For example
 Enhancement
mode:
When there is no voltage on the gate the device does not conduct. More is the voltage
on the gate, the better the device can conduct.

Working Principle of MOSFET:

The aim of the MOSTFET is to be able to control the voltage and current flow between
the source and drain. It works almost as a switch. The working of MOSFET depends
upon the MOS capacitor. The MOS capacitor is the main part of MOSFET. The
semiconductor surface at the below oxide layer which is located between source and
drain terminal. It can be inverted from p-type to n-type by applying a positive or
negative gate voltages respectively. When we apply the positive gate voltage the
holes present under the oxide layer with a repulsive force and holes are pushed
downward with the substrate. The deflection region populated by the bound negative
charges which are associated with the acceptor atoms. The electrons reach channel
is formed. The positive voltage also attracts electrons from the n+ source and drain
regions into the channel. Now, if a voltage is applied between the drain and source,
the current flows freely between the source and drain and the gate voltage controls
the electrons in the channel. Instead of positive voltage if we apply negative voltage ,
a hole channel will be formed under the oxide layer.

MOSFET Block
Diagram
Types of MOSFET
The MOSFET is classified into two types such as;

Depletion mode MOSFET

Enhancement mode MOSFET

Depletion Mode: When there is zero voltage on the gate terminal, the
channel shows its maximum conductance. As the voltage on the gate is
negative or positive, then decreases the channel conductivity.

Depletion Mode MOSFET

Enhancement Mode

When there is no voltage on the gate terminal the device does not conduct.
More voltage applied on the gate terminal, the device has good conductivity.
 Enhance Mode MOSFET

MOSFET Working Principle

The working of MOSFET depends upon the metal oxide capacitor (MOS)
that is the main part of the MOSFET. The oxide layer presents among the
source and drain terminal. It can be set from p-type to n-type by applying
positive or negative gate voltages respectively. When apply the positive gate
voltage the holes present under the oxide layer with a repulsive force and
holes are pushed downward through the substrate. The deflection region
populated by the bound negative charges which are allied with the acceptor
atoms.

MOSFET Block Diagram

P- Channel MOSFET

The P-Channel MOSFET consist negative ions so it works with negative

voltages. When we apply the negative voltage to gate, the electrons present
under the oxide layer through pushed downward into the substrate with a
repulsive force. The deflection region populates by the bound positive
charges which are allied with the donor atoms. The negative voltage also
attracts holes from p+ source and drain region into the channel region.
 P-Channel MOSFET
N- Channel MOSFET

When we apply the positive gate voltage the holes present under the oxide
layer pushed downward into the substrate with a repulsive force. The
deflection region is populated by the bound negative charges which are allied
with the acceptor atoms. The positive voltage also attracts electrons from the
n+ source and drain regions into the channel. Now, if a voltage is applied
among the drain and source the current flows freely between the source and
drain and the gate voltage controls the electrons in the channel. In place of
positive voltage if we apply a negative voltage (hole) channel will be formed
under the oxide layer.

N-Channel MOSFET
MOSFET Applications
The applications of the MOSFET used in various electrical and electronic projects
which are designed by using various electrical and electronic components. For
better understanding of this concept, here we have explained some projects.

MOSFET Used as a Switch

In this circuit, using enhanced mode, a N-channel MOSFET is being used to switch
the lamp for ON and OFF. The positive voltage is applied at the gate of the
MOSFET and the lamp is ON (VGS =+v) or at the zero voltage level the device
turns off (VGS=0). If the resistive load of the lamp was to be replaced by an
inductive load and connected to the relay or diode to protect the load. In the above
circuit, it is a very simple circuit for switching a resistive load such as LEDs or lamp.
But when using MOSFET to switch either inductive load or capacitive load
protection is required to contain the MOSFET applications. If we are not giving the
protection, then the MOSFET will be damaged. For the MOSFET to operate as an
analog switching device, that needs to be switched between its cutoff region where
VGS =0 and saturation region where VGS =+v.

MOSFET As a Switch
Auto Intensity Control of Street Lights using MOSFET

Now-a-days most of lights placed on the highways are done through High Intensity
Discharge lamps (HID), whose energy consumption is high. Its intensity cannot be
controlled according to the requirement, so there is a need to switch on to an
alternative method of lighting system, i.e., to use LEDs. This system is built to
overcome the present day drawbacks of HID lamps.
 Auto Intensity Control of Street Lights using MOSFET

This project is designed to control the lights automatically on the highways using
microprocessor by variants of the clock pulses. In this project, MOSFET plays
major role that is used to switch the lamps as per the requirement. The proposed
system using a Raspberry Pi board that is a new development board consist a
processor to control it. Here we can replace the LEDs in place of HID lamps which
are connected to the processor with the help of the MOSFET. The microcontroller
release the respective duty cycles, then switch the MOSFET to illuminate the light
with bright intensity

Marx Generator Based High Voltage Using MOSFETs

The main concept of this project is to develop a circuit that delivers the output
approximately triple to that of the input voltage by Marx generator principle. It is
designed to generate high-voltage pulses using a number of capacitors in parallel
to charge during the on time, and then connected in series to develop a higher
voltage during the off period. If the input voltage applied is around 12v volts DC,
then the output voltage is around 36 volts DC.
 Marx Generator Based High Voltage Using MOSFETs

This system utilizes a 555 timer in astable mode, which delivers the clock pulses
to charge the parallel capacitors during on time and the capacitors are brought in
a series during the off time through MOSFET switches; and thus, develops a
voltage approximately triple to the input voltage but little less, instead of exact 36v
due to the voltage drop in the circuit. The output voltage can be measured with the
help of the multimeter.

EEPROM based Preset Speed Control of BLDC Motor

The speed control of the BLDC motor is very essential in industries as it is

important for many applications such as drilling, spinning and elevator systems.
This project is enhanced to control the speed of the BLDC motor by varying the
duty cycle.
 EEPROM based Preset Speed Control of BLDC Motor

The main intention of this project is to operate a BLDC motor at a particular speed
with a predefined voltage . Therefore, the motor remains in an operational state or
restarted to operate at the same speed as before by using stored data from an
EEPROM.

The speed control of the DC motor is achieved by varying the duty cycles (PWM
Pulses) from the microcontroller as per the program. The microcontroller receives
the percentage of duty cycles stored in the EEPROM from inbuilt switch commands
and delivers the desired output to switch the driver IC in order to control the speed
of the DC motor. If the power supply is interrupted, the EEPROM retains that
information to operate the motor at the same speed as before while the power
supply was available.

LDR Based Power Saver for Intensity Controlled Street Light

In the present system, mostly the lightning-up of highways is done through High
Intensity Discharge lamps (HID), whose energy consumption is high and there is
no specialized mechanism to turn on the Highway light in the evening and switch
off in the morning.
 LDR Based Power Saver for Intensity Controlled Street Light

Its intensity cannot be controlled according to the requirement, so there is a need

to switch to an alternative method of lighting system, i.e., by using LEDs. This
system is built to overcome the present day, drawback of HID lamps.

This system demonstrates the usage of LEDs (light emitting diodes) as light
source and its variable intensity control, according to the requirement. LEDs
consume less power and its life is more, as compared to conventional HID lamps.

The most important and interesting feature is its intensity that can be controlled
according to requirement during non-peak hours, which is not feasible in HID
lamps. A light sensing device LDR (Light Dependent Resistance) is used to sense
the light. Its resistance reduces drastically according to the daylight, which forms
as an input signal to the controller .
A cluster of LEDs is used to form a street light. The microcontroller contains
programmable instructions that controls the intensity of lights based on the PWM
(Pulse width modulation) signals generated.

The intensity of light is kept high during the peak hours, and as the traffic on the
roads tend to decrease in late nights; the intensity also decreases progressively
till morning. Finally the lights get completely shut down at morning 6 am, to resume
again at 6pm in the evening. The process thus repeats.
SVPWM (Space Vector Pulse Width Modulation)

The Space Vector PWM is a sophisticated technique for controlling AC motors by

generating a fundamental sine wave that provides a pure voltage to the motor with
lower total harmonic distortion. This method overcomes the old technique SPWM
to control an AC motor that has high-harmonic distortion due to the asymmetrical
nature of the PWM switching characteristics.

SVPWM (Space Vector Pulse Width Modulation)

In this system, DC supply is produced from the single-phase AC after rectification,

and then is fed to the 3-phase inverter with 6 numbers of MOSFETs. For each
phase, a pair of MOSFETare used, and, therefore, three pairs of MOSFETs are
switched at certain intervals of time for producing three-phase supply to control the
speed of the motor. This circuit also gives light indication of any fault that occurs
in the control circuit

Therefore, this is all about types of MOSFET applications, Finally, we will conclude
that, the MOSFET requires high voltage whereas transistor requires low voltage
and current. As compared to a BJT, the driving requirement for the MOSFET is
much better.Furthermore, any queries regarding this article you can comment us
by commenting in the comment section below.
MOSFET Characteristic Curves
nMOSFET (enhancement) Characteristic Curves
Measured Characteristic Curves for 2N7000

for VG = 2.5 V, 2.75 V, 3 V, ...., 4 V

big data file, smaller data file, postscript plot, pdf plot

Perhaps the most striking aspect of these curves is the power being
controlled by this device. In the upper right hand side of this curve we have
a current of .4 A and a voltage drop of 5 V, which is a power dissipation of
.45=2 Watts -- way beyond the thermal limit of the package (0.4 W). In
fact this device did not survive the test. If we display the thermally
disallowed region (IDVDS > .4 W) on top of these characteristic curves
you can get a better idea of how this device might be used.
The small VDS "ohmic" region and the small ID "saturation" region are
available.

In the usual saturation region the characteristic curves are much like a
JFETs, but now with positive controlling gate voltages:
for VG = 2.00 V, 2.05 V, 2.10 V, ...., 2.35 V

big data file, smaller data file, postscript plot, pdf plot

Note the small range of VG controlling a big range of ID... these devices can
be more sensitive amplifiers than JFETs.

In the small VDS "ohmic" region the characteristic curves are nearly straight
lines through the origin -- the defining behavior of a resistor. Here the
slope line is controlled by the gate voltage. For sufficiently small VG the
line is essentially flat: a large resistance and an "off" transistor. For
larger VG the resistance approaches a small limiting resistance, here about
2.4

for VG = 2.25 V, 2.50 V, 2.75 V, ...., 4.00 V smaller data

file, postscript plot, pdf plot

The behavior of an enhancement n-channel metal-oxide field-effect

transistor (nMOSFET) is largely controlled by the voltage at the gate
(usually a positive voltage). For the usual drain-source voltage drops (i.e.,
the saturation region: positive voltages from a few volts up to some
breakdown voltage) the drain current (ID) is nearly independent of the
drain-source voltage (VDS), and instead depends on the gate voltage (VG).
(This is unusual behavior: usually more voltage produces to more current,
but here the current only increases slightly with increasing VDS.)
The transconductance, i.e., the ratio of the change in drain current to
change in gate voltage, often denoted by g or yfs, is

g = yfs = ID / V G

In the simplest approximation the characteristic curves of a nMOSFET are

a set of flat lines:

Each (flat) curve shows that ID doesn't change with changing VDS. The
different levels show that ID does depend on VG. The spacing of the
constant-ID curves is usually not constant, instead ID depends quadratically
on VG:

ID=K(VG-VTO)2

where the threshold voltage VTO and K are constants.

A slightly more complicated approximation takes into account the sloping

of the characteristic curves. In bipolar transistors this is due to the Early
Voltage, here a very similar equation results from quite different physics:
channel length modulation. The equation looks like:

1/VA =

So in this model all the characteristic curves all have a common x-axis
intercept at the large negative voltage -1/ . (The dashed curves are far
from the active region and in no way represent the actual behavior of the
transistor for negative VDS. In fact, the transistor is not designed to be
operated with negative VDS.)

(For the above measured 2N7000, the characteristic curves are not straight
lines, rather they show a definite curve. Ignoring this fact, I'd say 1/
ranges from 15 to 30 V -- much less flat than JFETs.)

The actual relationship between the drain current (ID) and the controlling
gate voltage (VG) and drain-source voltage drop (VDS) is some complicated
function which we can denote:

ID(VG,VDS)

Like any function we can approximate it near a particular point using just
the first terms of a Taylors expansion:
Clearly these admittance (y) parameters are not constants. For
example yos is the slope of a characteristic curve, which is small for
voltages near threshold and increases for larger VG.

The defining parameter -- the transconductance g or yfs -- is not at all

constant. To the extent that the drain current depends quadratically on the
gate voltage, the transconductance -- which is the derivative: dID/dVG --
depends linearly on VG above threshold. Below is the measured
relationship: ID vs VG for the above 2N7000. Notice that for VG>VTO, the
drain current is well approximated by the quadratic, whereas
for VG<VTO (i.e., sub-threshold) the drain current depends approximately
exponentially on VG. Thus the drain current is not strictly zero below
threshold, merely exponentially small.
(Note that VG=0 is sub-threshold, so the IDSS parameter is a very small
current.)

The characteristic curves focus on the output of the transistor, but we can
also consider the behavior of the input. In normal operation the gate is
separated by an insulating layer from the rest of the transistor, and so IG is
essentially zero (which should sound like a huge input resistance). As a
result the outputs have little effect on the inputs, but if we follow the
traditional analysis the actual functional relationship giving the gate
current (IG) from the gate voltage (VG) and drain-source voltage drop (VDS)
is some complicated function which we can denote:

IG(VG,VDS)

Like any function we can again approximate it near a particular point using
just the first terms of Taylors expansion:

The small values of yrs and yis shows that the input is largely unaffected by
the output and that the input resistance is huge. In fact this input resistance
is so large that the capacitance reactance is almost always of greater
significance.

Particularly for MOSFETs it should be noted that in the small VDS region --
before the saturation region -- the MOSFET characteristic curves look like
nearly straight lines through the origin. VG controls the slope of these lines,
so the MOSFET acts like a variable resistor with a voltage (VG) control.
Here is a plot of this region for the above 2N7000:
The spec sheet reports the following values for the 2N7000:

Characteristics Symbol Min Max Unit

Forward Transconductance yfs 100 - m mhos

Static Drain-Source On-Resistance rDS(on) - 5

Zero-Gate Voltage Drain Current IDSS - 1 A

Gate Threshold Voltage VTO 0.8 3.0 V

Input Capacitance CiSS - 60 pF

Rated Parameters