BF961

Vishay Semiconductors

NChannel Dual Gate MOS-Fieldeffect Tetrode,

Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.

Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.

Features
D Integrated gate protection diodes D High AGC-range
D High cross modulation performance D Low feedback capacitance
D Low noise figure D Low input capacitance

3
G2 D
4
2
G1
94 9307 96 12647
1
BF961 Marking: BF961
Plastic case (TO 50) S
12623
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2

Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified
Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage VDS 20 V
Drain current ID 30 mA
Gate 1/Gate 2 - source peak current IG1/G2SM 10 mA
Total power dissipation Tamb 60 C Ptot 200 mW
Channel temperature TCh 150 C
Storage temperature range Tstg 55 to +150 C

Maximum Thermal Resistance

Tamb = 25_C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 RthChA 450 K/W
plated with 35mm Cu

Document Number 85002 www.vishay.com

Rev. 3, 20-Jan-99 1 (7)
BF961
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter Test Conditions Type Symbol Min Typ Max Unit
Drain - source ID = 10 mA, VG1S = VG2S = 4 V V(BR)DS 20 V
breakdown voltage
Gate 1 - source IG1S = 10 mA, VG2S = VDS = 0 V(BR)G1SS 8 14 V
breakdown voltage
Gate 2 - source IG2S = 10 mA, VG1S = VDS = 0 V(BR)G2SS 8 14 V
breakdown voltage
Gate 1 - source VG1S = 5 V, VG2S = VDS = 0 IG1SS 100 nA
leakage current
Gate 2 - source VG2S = 5 V, VG1S = VDS = 0 IG2SS 100 nA
leakage current
Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V BF961 IDSS 4 20 mA
BF961A IDSS 4 10.5 mA
BF961B IDSS 9.5 20 mA
Gate 1 - source VDS = 15 V, VG2S = 4 V, ID = 20 mA VG1S(OFF) 3.5 V
cut-off voltage
Gate 2 - source VDS = 15 V, VG1S = 0, ID = 20 mA VG2S(OFF) 3.5 V
cut-off voltage

Electrical AC Characteristics
VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified

Parameter Test Conditions Symbol Min Typ Max Unit

Forward transadmittance y21s 12 15 mS
Gate 1 input capacitance Cissg1 3.7 pF
Gate 2 input capacitance VG1S = 0, VG2S = 4 V Cissg2 1.6 pF
Feedback capacitance Crss 25 fF
Output capacitance Coss 1.6 pF
Power gain GS = 2 mS, GL = 0.5 mS, f = 200 MHz Gps 20 dB
AGC range VG2S = 4 to 2 V, f = 200 MHz DGps 50 dB
Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.8 2.5 dB

www.vishay.com Document Number 85002

2 (7) Rev. 3, 20-Jan-99
 BF961
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C unless otherwise specified)
300 22

Y21S Forward Transadmittance ( mS )

P tot Total Power Dissipation ( mW )

20 VDS=15V
250 f=1MHz VG2S=5V
18
16
200
14
12
150
10
8 4V
100
6 0V
3V
50 4
2 2V
1V
0 0
0 20 40 60 80 100 120 140 160 2.01.51.00.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
96 12159 Tamb Ambient Temperature ( C ) 96 12162 VG1S Gate 1 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Figure 4. Forward Transadmittance vs.
Ambient Temperature Gate 1 Source Voltage

22 4.0
20 VG1S= 0.6V C issg1 Gate 1 Input Capacitance ( pF )
3.5
18
0.4V
ID Drain Current ( mA )

16 3.0 VDS=15V
VG2S=4V
14 2.5
0.2V f=1MHz
12
2.0
10 0
8 1.5
0.2V
6 1.0
0.4V
4
0.6V 0.5
2 0.8V
0 0
0 2 4 6 8 10 12 14 16 18 20 22 24 2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
96 12160 VDS Drain Source Voltage ( V ) 96 12163 VG1S Gate 1 Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage

24 4.0
Y21S Forward Transadmittance ( mS )

C issg2 Gate 2 Input Capacitance ( pF )

22 VDS=15V 3.6 VDS=15V

20 IDS=10mA VG1S=0.5V VG1S=0
3.2
18 f=1MHz
2.8
16 0V
14 2.4
12 2.0
10 1.6
8
0.5V 1.2
6
0.8
4
2 0.4
0 0
2 1 0 1 2 3 4 5 6 2 1 0 1 2 3 4 5 6 7
96 12161 VG2S Gate 2 Source Voltage ( V ) 96 12164 VG2S Gate 2 Source Voltage ( V )
Figure 3. Forward Transadmittance vs. Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage Gate 2 Source Voltage

Document Number 85002 www.vishay.com

Rev. 3, 20-Jan-99 3 (7)
BF961
Vishay Semiconductors

3.0 10
VG2S=4V VDS=15V
5
C oss Output Capacitance ( pF )

2.5 f=1MHz VG2S=4V

f=50...700MHz f=50MHz
0
2.0 ID=5mA 100MHz

Im ( y21 ) ( mS )
5
10mA
20mA 200MHz
1.5 10
300MHz
15
1.0 400MHz
20 500MHz
0.5 600MHz
25
700MHz
0 30
0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
96 12165 VDS Drain Source Voltage ( V ) 96 12167 Re (y21) ( mS )
Figure 7. Output Capacitance vs. Drain Source Voltage Figure 9. Short Circuit Forward Transfer Admittance

18 7.0
6.5 f=700MHz
16 f=700MHz
6.0
14 600MHz 5.5 600MHz
5.0 ID=5mA
12 4.5 500MHz
Im ( y11 ) ( mS )

Im ( y22 ) ( mS )

500MHz
10 4.0
400MHz 3.5 400MHz ID=20mA
8 3.0
300MHz 2.5 300MHz
6 VDS=15V VDS=15V
2.0
4 200MHz VG2S=4V 200MHz VG2S=4V
1.5
ID=5...20mA ID=5...20mA
1.0
2 100MHz f=50...700MHz 100MHz f=50...700MHz
0.5
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
96 12166 Re (y11) ( mS ) 96 12168 Re (y22) ( mS )
Figure 8. Short Circuit Input Admittance Figure 10. Short Circuit Output Admittance

www.vishay.com Document Number 85002

4 (7) Rev. 3, 20-Jan-99
 BF961
Vishay Semiconductors
VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V , Z0 = 50 W
S11 S12
j 90
120 60
j0.5 j2

150 30
j0.2 j5
300

1
600

700MHz
0 0.2 0.5 1 2 5 180 0.04 0.08 0
50
100

j0.2 j5
700 MHz 300
500 150 30

j0.5 j2
120 60
12 920 j 12 921 90

Figure 11. Input reflection coefficient Figure 13. Reverse transmission coefficient
S21 S22
90 j
120 60
j0.5 j2

400 30
j0.2 j5
200

700MHz
1
50
180 0.8 1.6 0 0 0.2 0.5 1 2 5
100
300
ID= 20mA
500
10mA j0.2 j5
30
5mA 700 MHz
150 30

j0.5 j2
120 60
12 922 90 12 923 j

Figure 12. Forward transmission coefficient Figure 14. Output reflection coefficient

Document Number 85002 www.vishay.com

Rev. 3, 20-Jan-99 5 (7)
BF961
Vishay Semiconductors
Dimensions in mm

96 12242

www.vishay.com Document Number 85002

6 (7) Rev. 3, 20-Jan-99
 BF961
Vishay Semiconductors
Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 85002 www.vishay.com

Rev. 3, 20-Jan-99 7 (7)
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