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MOS Model 20
Level 2002.2
c NXP Semiconductors 2009
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c NXP Semiconductors 2009
Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
Abstract: The model description for the compact high-voltage MOS transistor
model called MOS Model 20 (MM20) is presented. MM20 has been
developed for circuit simulation of power integrated circuits. MM20
describes the electrical behaviour of a high-voltage MOS device, like
a Lateral Double-diffused MOS (LDMOS) device or an extended-drain
MOSFET. The model combines the MOSFET operation of the channel
region with that of the drift region of such high-voltage devices.
Since MM20 is a surface-potentialbased model, it gives an accurate de-
scription in all operation regimes, ranging from sub-threshold to above
threshold, in both the linear and saturation regime. MM20 includes
strong inversion, depletion, and accumulation, in both the channel re-
gion and the drift region of the device. In addition to the previous
MM20 model (level = 2001), in this MM20 model (level = 2002), quasi-
saturation is included, an effect which is typical for high-voltage LD-
MOS devices.
The objective of this report is to present the full definition of MM20,
level = 2002, including the model parameter set, the temperature and
geometrical scaling rules, and all the implemented model equations for
the currents, charges, and noise sources. The parameter extraction strat-
egy is briefly explained.
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May 2009 MOS Model 20, Level 2002.2 Unclassified Technical Note PR-TN-2005/00406
Preface
The first version of the compact LDMOS model, MOS Model 20, became available in October
2003. Future changes and additions to the model have been documented by extending or changing
the documentation in this report.
History of Model
October 2003 : Release of MOS Model 20, level 2001, test version.
January 2004 : Update of MOS Model 20, level 2001, test version.
This update, for instance, omits the source-drain interchange for the
DC current description.
October 2004 : Introduction of MOS Model 20, level 2001.
This update includes some practical changes, like the pinch-off
voltage Voxp0 , the clip-low values of m and of D , and the
implementation of the noise transfer function.
May 2005 : Introduction of MOS Model 20, level 2002.
This update includes velocity saturation in the drift region.
August 2006 : Update of MOS Model 20, level 2002.
This update includes some practical changes, like the clip-low
values of W and WD , and improved avalanche-current modelling.
February 2007 : Update of MOS Model 20, level 2002.
Release of version 2002.2, which includes self-heating.
March 2008 : Update of MOS Model 20, level 2002.
Several minor bugs fixed in version 2002.2 of the model.
History of Documentation
August 2003 : First documentation of MOS Model 20, level 2001, test version.
January 2004 : Update of documentation of MOS Model 20, level 2001, test version,
according to the model formulation of January 2004.
October 2004 : Introduction of MOS Model 20, level 2001.
This update includes some practical changes, like the pinch-off
voltage Voxp0 , and the clip-low values of m and of D .
May 2005 : Introduction of MOS Model 20, level 2002.
This update includes velocity saturation in the drift region.
August 2006 : Update of documentation of MOS Model 20, level 2002.
This update takes into account the contribution of both the channel and
drift regions to the weak-avalanche current.
March 2007 : Update of documentation of MOS Model 20, level 2002.
This update includes a section on the parameter extraction strategy.
March 2008 : Update of documentation of MOS Model 20, level 2002.
This update details aspects new to version 2002.2 and corrects minor errors.
May 2009 : Update of documentation of MOS Model 20, level 2002.
This update corrects minor errors related to self-heating and temperature scaling.
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c NXP Semiconductors 2009
Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
Contents
1 Introduction 1
1.1 Structural Elements of MOS Model 20 . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Structure of this Report . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Embedding 5
2.1 External Electrical Quantities and Variables . . . . . . . . . . . . . . . . . . . . 5
2.2 Internal Electrical Quantities and Variables . . . . . . . . . . . . . . . . . . . . 6
2.3 Embedding Procedure of MOS Model 20 in a Circuit Simulator . . . . . . . . . 7
3 Nomenclature 11
3.1 Input Variables and Quantities . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1.1 List of Numerical Constants . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1.2 List of Physical Constants . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.1.3 List of Circuit Simulator Variables . . . . . . . . . . . . . . . . . . . . . 11
3.2 Geometrical Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.2.1 List of Geometrical Model Parameters . . . . . . . . . . . . . . . . . . . 12
3.2.2 Default and Clipping Values of Geometrical Model Parameters . . . . . . 16
3.2.3 Geometry and Temperature Scaling . . . . . . . . . . . . . . . . . . . . 19
3.3 Electrical Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.3.1 List of Electrical Model Parameters . . . . . . . . . . . . . . . . . . . . 21
3.3.2 Default and Clipping Values of Electrical Model Parameters . . . . . . . 24
3.3.3 Temperature Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.4 Postprocessing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.4.1 MULT Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.4.2 Clipping of Actual Parameters . . . . . . . . . . . . . . . . . . . . . . . 27
4 Implemented Equations 28
4.1 Internal Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.2 Current Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
4.3 Charge Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
4.4 Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
4.5 Self-Heating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
4.5.1 Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
4.5.2 Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
4.5.3 Usage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
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6 Pstar-Specific Items 50
6.1 Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
6.2 DC Operating Point Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
References 53
A Auxiliary Functions 55
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Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
1 Introduction
MOS Model 20 (MM20) is a compact MOSFET model intended for analogue circuit simulation in
high-voltage MOS technologies. MOS Model 20 describes the electrical behaviour of the region
under the thin gate oxide of a high-voltage MOS device, like a Lateral Double-diffused MOS
(LDMOS) device or an extended-drain MOSFET; see Figure 1. It thus combines the MOSFET
operation of the channel region with that of the drift region under the thin gate oxide in a high-
voltage MOS device. As such, MOS Model 20 is aimed as a successor of the combination of MOS
Model 9 (MM9) [1] for the channel region in series with MOS Model 31 (MM31) [1] for the drift
region under the thin gate oxide, in macro models of various high-voltage MOS devices.
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Figure 1: The region under the thin gate oxide of an n-channel LDMOS device, described by MOS
Model 20.
The model is based on the Silicon-on-Insulator (SOI)-LDMOS model developed by the University
of Southampton [2]. MOS Model 20 has especially been developed to improve the convergence
behaviour during circuit simulation, by having the voltage at the transition (node Di) from the
channel region to the drift region calculated inside the model itself.
MOS Model 20 gives a complete description of all transistor-actionrelated quantities: nodal cur-
rents, nodal charges, and noise-power spectral densities. The equations describing these quantities
are based on surface-potential formulations, resulting in equations valid over all operation regimes
(i.e. accumulation, depletion, and inversion in both the channel region and the drift region). The
surface potential as a function of the terminal voltages is obtained by the explicit expression as
derived in Ref. [3] and used in MOS Model 11 (MM11), level 1101 [4]. Additionally, several im-
portant physical effects have been included in the model: mobility reduction, velocity saturation,
drain-induced barrier lowering, static feedback, channel length modulation, and weak avalanche
(or impact ionization).
MOS Model 20 only provides a model for the intrinsic MOSFET behaviour of the region under
the thin gate oxide of a high-voltage MOS device, as well as the gate/source- and gate/drain over-
lap regions. Junction charges, junction leakage currents, interconnect capacitances, and parasitic
bipolar transistors are not included; they should be covered by separate models. For instance, to
describe the electrical behaviour due to the pn-junction between the backgate (B) and drain (D),
an additional diode model for this pn-junction has to be added; see Figure 2. Furthermore, for very
high-voltage MOS transistors with an additional thick field oxide, like in Figure 3, MOS Model
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May 2009 MOS Model 20, Level 2002.2 Unclassified Technical Note PR-TN-2005/00406
20 can be used in series with a separate model for the drift region under the thick field oxide. In
the case of the SOI-LDMOS transistor in Figure 3, MOS Model 40 (MM40) [1] has been used to
model the part of the drift region underneath the thick oxide. Finally, self-heating of the device,
which may significantly affect the electrical behaviour, is now included via a thermal network as
of version 2002.2 of the model.
B S 00 D
*
00 00
%6 '
+:
Figure 3: Macro model for an SOI-LDMOS transistor with a thick field oxide.
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Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
The structure of MOS Model 20 is the same as the structure of MOS Model 9 and MOS Model
11. This structure can be divided into:
Model embedding: It is convenient to use one single model for both n- and p-channel
devices. For this reason, any p-channel device and its bias conditions are mapped onto those
of an equivalent n-channel transistor. This mapping comprises a number of sign changes.
Since a DMOS transistor is an asymmetric device, no source-drain interchange is applied
in case the external voltage mapped onto an n-channel transistor is negative. Thus, in MOS
Model 20, the DC currents and charges are calculated by use of the externally applied volt-
ages mapped onto an equivalent n-channel transistor.
Preprocessing: The complete set of all the parameters, as they occur in the equations for
the various electrical quantities, is denoted as the set of actual parameters. Since most of
these actual parameters scale with temperature, and since self-heating is significant for high-
voltage devices, each of them can be determined by electrical measurements over a range of
temperatures. The set of electrical parameters at a reference temperature including the tem-
perature scaling parameters and reference temperature itself, is denoted as the miniset. This
miniset forms the input for the so-called electrical model, from which the actual parameters
for an arbitrary temperature are obtained by applying the temperature scaling rules. These
temperature scaling rules thus describe the dependencies of the actual parameters on the
temperature of the device.
Since most of the electrical parameters also scale with geometry, the process as a whole
is characterized by an enlarged set of parameters, usually called the maxiset. This maxiset
consists of the transistor dimensions, the electrical parameters for certain device dimen-
sions at a reference temperature, the reference temperature itself, and all temperature- and
geometry scaling parameters. Together, they form the input for the so-called geometrical
model. From the maxiset parameters, the actual parameters for an arbitrary transistor are
obtained by applying the temperature and geometry scaling rules. These scaling rules thus
describe the dependencies of the actual parameters on the drift-region length, device width,
and temperature of the device.
Since the application of the scaling rules is done only once, i.e. prior to the actual electrical
simulation, this procedure is called preprocessing.
Clipping: To prevent the scaling rules from generating actual parameters that are outside
a physically realistic range or that create numerical difficulties (such as division by zero),
the actual parameters may be clipped to a pre-specified range. This clipping of actual pa-
rameters is done after the preprocessing. The pre-specified clipping ranges for the actual
parameters are taken as those in the electrical model parameter list in Section 3.3.1.
Furthermore, in order to prevent numerical difficulties in the preprocessing procedure, the
model parameters of both the electrical and geometrical model may also be clipped to a
pre-specified range. This clipping of model parameters is done before the preprocessing.
The pre-specified clipping ranges for both the electrical and geometrical model parameters
are taken as those in the geometrical model parameter list in Section 3.2.1.
Current equations: These are all expressions needed to obtain the DC nodal currents as a
function of the bias conditions. They can be separated into equations for the channel current
and the avalanche current.
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May 2009 MOS Model 20, Level 2002.2 Unclassified Technical Note PR-TN-2005/00406
Charge equations: These are all the equations that are used to calculate both the intrinsic
and extrinsic charge quantities, which are assigned to the nodes. They can be separated into
equations for the channel-region charges and the drift-region charges.
Noise equations: The total noise output of a transistor consists of a thermal noise and a
flicker noise part, which create fluctuations in the channel current. Owing to the capacitive
coupling between the gate and channel region, current fluctuations in the gate current are
induced as well, which are referred to as induced gate noise.
After this introductory section, the procedure of embedding MOS Model 20 in a circuit simulator
is outlined. Next, the nomenclature is explained, while in Section 4 the implemented equations
are listed. Finally the operating point output parameters are described.
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Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
2 Embedding
In high-voltage technologies, both n- and p-channel LDMOS transistors are supported. It is con-
venient to use one single model for both types of transistor instead of two separate models. This
is accomplished by mapping a p-channel device with its bias conditions and parameter set onto an
equivalent n-channel device with appropriately changed bias conditions (i.e. currents, voltages,
and charges) and parameters. In this way, both types of transistor can be treated as an n-channel
transistor. In MOS Model 20, we let the electrons and holes have the same electrical behaviour.
As a result, the same equations are used for both n- and p-type transistors.
Since a DMOS transistor is an asymmetric device, no source-drain interchange is applied in case
the external voltage mapped onto an n-channel transistor is negative. Thus, in MOS Model 20, the
DC currents and charges are calculated by use of the externally applied voltages mapped onto an
equivalent n-channel transistor.
The total transformation procedure is explained in detail in Section 2.3.
ieD D e
b Ve e = Ie + dQD
iD
D D
dt
SeD
ieG G e
b Ve e = Ie + dQG
iG
G G
dt
SeG
ieS S dQSe
b Ve iSe = IeS +
S
dt
SeS
ieB B e
b Ve e = Ie + dQB
iB
B B
dt
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Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
In order to embed MOS Model 20 correctly into a circuit simulator, the following procedure
(illustrated in detail in Figure 2.3) should be followed. We have assumed that indeed the simulator
provides the nodal potentials VeD , VeG , VeS , and VBe based on an a priori assignment of drain, gate,
source, and bulk. As a DMOS is an asymmetric device, no source-drain interchange is applied as
is done in a conventional (symmetric) MOSFET. The following steps are taken:
1. Calculate the voltages VDS , VGS , and VSB , and the additional voltages VDG and VSG . The
latter are used for calculating the charges associated with overlap capacitances.
2. Based on n- or p-channel devices, calculate the modified voltages VDS , VGS , and VSB . From
here onwards, only n-channel behaviour needs to be considered.
3. Evaluate all the internal output quantities channel current, weak-avalanche current, nodal
charges, and noise-power spectral densities using the MOS Model 20 equations and the
corresponding voltages.
5. Change from branch current to nodal currents, establishing the external current output quan-
tities. Add the overlap charges to the nodal charges, thus forming the external charge output
quantities.
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e , Ve , Ve , Ve
VD G S B
?
VDS = VeD VeS
VGS = VeG VeS
V = Ve Ve
SB S B
VDG = VeD VeG
V = Ve Ve
SG S G
?
@
@
n-channel Channel@ p-channel
@ type
@
@
VDS = VDS VDS = VDS
V = V
GS GS V = V
GS GS
VSB = V
SB VSB = VSB
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Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
?
@
@
yes VDS 0@ no
@
@
@
=I
IDB IDB = 0
AVL
I =0 I = I
SB SB AVL
n o
SD = SDfl + SDth
SD = SDth + SDfl + SGth + 2Re SGDth
SG = SGth =S
SG Gth
n o
S = S + S + S
S Dfl Dth Gth + 2Re SGDth S = S + S
S Dfl Dth
SDG = S*GD = S S *
SDG Gth GD
th th
S = SGth SGDth =S
SGS
GS GDth
?
@
@
n-channel Channel@ p-channel
@ type
@
@
SD = SD SD = SD
QD = QD SG = SG QD = Q
D SG = SG
IDS = IDS IDS = IDS
= I QG = QG S = S
QG = QG S = S
IDB = IDB
S S S S
IDB
Q = Q SDG = SDG Q = Q SDG = SDG
DB
S S
I =I S
I = I S
QB = QB S = S QB = QB S = S
SB SB SB SB
GS GS GS GS
SSD = SSD SSD = SSD
?
B
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May 2009 MOS Model 20, Level 2002.2 Unclassified Technical Note PR-TN-2005/00406
?
SeD = SD
e = I + I
ID DS DB
e = Q + C
QD D
GDO VDG SeG = SG
e =0
IG e = Q C Se = S
QG G GDO VDG CGSO VSG S S
Ie = I + I
S DS SB Qe = Q + C
S S V
GSO SG SeDG = SDG
IBe = IDB ISB QBe = QB Se = S
GS GS
SeSD = SSD
?
IeD IG
e Ie Ie
S B QeD QeG QeS QeB SeD SeG SeS SeDG SeGS SeSD
It is customary to have separate user models in the circuit simulators for n- and p-channel transis-
tors. In that manner, it is easy to use a different set of reference and scaling parameters for the two
channel types. As a consequence, the changes in the parameter values necessary for a p-channel
type transistor are normally already included in the parameter sets on file. The changes should not
be included in the simulator.
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3 Nomenclature
1 A LN MINDOUBLE 800
2 f F Hz Operation frequency
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To characterize a high-voltage MOS process as a whole, the geometrical model can be used. This
model uses as input the actual transistor dimensions, the electrical parameters for a reference
device dimension and temperature, the reference temperature, and all temperature- and geometry-
scaling parameters, together referred to as the maxiset. The model parameters of the geometrical
model are listed in Section 3.2.1, while its scaling rules are listed in Section 3.2.3. For simplicity,
in the geometrical MOS Model 20, both n-channel and p-channel devices have been assigned the
same default parameter values.
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The additional parameters for the model including self-heating are listed below.
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Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
TKamb = T0 + Ta + Ta (3.1)
WE = W + W (3.5)
WED = WD + WD (3.6)
Actual parameters:
kB TKdev
T = (3.8)
q
B T = B + T ST ;B (3.13)
BD T = BD + T ST ;BD (3.14)
TKref
WE
T = W (3.15)
WEN TK dev
TKref acc
WED
acc T = acc W (3.16)
WEN TKdev
TKdev RD
WEN
RDT = RDW (3.17)
WED TK ref
WEN
1 = 1R 1 + SW ;1 (3.18)
WE
WEN
2 = 2R 1 + SW ;2 (3.19)
WE
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TKref 3
WEN
3T = 3R 1+ SW ;3 (3.20)
TKdev WE
TK ref 3D
WEN
3DT = 3DR 1+ SW ;3D (3.21)
TK dev WED
WEN
a1chT = a1chR (1 + T ST ;a1ch ) 1 + SW ;a1ch (3.22)
WE
WEN
a1drT = a1dr R (1 + T ST ;a1dr ) 1 + SW ;a1dr (3.23)
WED
WE
Cox = CoxW (3.24)
WEN
WED
CoxD = CoxDW (3.25)
WEN
WED
CGDO = CGDOW (3.26)
WEN
WE
CGSO = CGSOW (3.27)
WEN
TKdev
NTT = NT (3.28)
TK ref
WEN
Nf A = Nf A W (3.29)
WE
WEN
Nf B = N f B W (3.30)
WE
WEN
Nf C = N f C W (3.31)
WE
ATH
TKamb
RTHT = RTH (3.32)
TK ref
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Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
To characterize a single LDMOS device including self-heating effects, the electrical model can be
used. This model uses as input the electrical parameters for a reference temperature, the reference
temperature, and all temperature-scaling parameters, together referred to as the miniset. The model
parameters of the electrical model are listed in Section 3.3.1, while its temperature scaling rules
are listed in Section 3.3.3. For simplicity, in the electrical MOS Model 20, both n-channel and
p-channel devices have been assigned the same default parameter values.
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Effective temperature:
TK amb = T0 + Ta + Ta (3.33)
Actual parameters:
kB TKdev
T = (3.37)
q
B T = B + T ST ;B (3.40)
BD T = BD + T ST ;BD (3.41)
TK ref
T = (3.42)
TKdev
TKref acc
acc T = acc (3.43)
TKdev
TK dev RD
RDT = RD (3.44)
TK ref
TKref 3
3T = 3 (3.45)
TKdev
TKref 3D
3DT = 3D (3.46)
TK dev
TKdev
NTT = NT (3.49)
TK ref
ATH
TKamb
RTHT = RTH (3.50)
TKref
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Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
3.4 Postprocessing
Since equal, parallel-circuited transistors are frequently employed in circuit design, the specifica-
tion of one transistor together with a multiplication factor MULT (M ) in the circuit description is
convenient and saves computation time. In MOS Model 20, the simulation of currents, charges,
and noise spectral densities for these equal, parallel-circuited transistors is implemented by adjust-
ing the following parameters, according to
T T M (3.51)
1
RDT RDT (3.53)
M
Cox Cox M (3.54)
After the geometry, temperature, and MULT scaling, the actual parameters are clipped. The clip-
ping values of these parameters are the same as those for the electrical model parameters, as listed
in Section 3.3.2.
c NXP Semiconductors 2009 27
May 2009 MOS Model 20, Level 2002.2 Unclassified Technical Note PR-TN-2005/00406
4 Implemented Equations
In the following sections, a function is denoted by F [variable, . . .], where F denotes the function
name and the function variables are enclosed by braces []. The definitions of the hyp- and hypm
functions are found in Appendix A.
Gmin = 1 1015
1 = 2 102
2 = 1 102
3 = 4 102
4 = 1 101
5 = 1 104
6 = 1 105
7 = 2 101
8 = 3 102
V1 = 1
Vlimit = 4 T
1
0 = 2 (B T + BD T )
1
Acc =
1 + k0 2 T
1
AccD =
1 + k0D 2 T
Cox
FL =
Cox + CoxD
28
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Effective potentials:
VDS , VDS 0
(
VDS1 = (4.3)
hypm [VDS , VSBt ; m] , VDS < 0
Channel-region quantities:
h p i
Vinv0 = hyp VGBt0 VSBt k0 VSBt ; 2 (4.6)
k
= p 0 (4.7)
2 V1 + VSBt
=1+ (4.8)
Vinv0
VDiSsat0 = (4.9)
2 VDiSsat0
VDiSsat = p (4.10)
1 + 1 + 2 3T VDiSsat0
Vdep0 Vdep00
Fmob = 1 + 1 Vinv0 + 2 (4.14)
k0
Drift-region quantities:
" p #
0 + hyp [VSB ; 1 ] 0
flin = hyp 1 D ; 2 (4.15)
0
flin
Voxp = (4.16)
acc T RDT
1
Fmobacc = 1 + 2 1acc (hyp [VGSt ; 2 ] + hyp [VGDt ; 2 ]) (4.17)
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May 2009 MOS Model 20, Level 2002.2 Unclassified Technical Note PR-TN-2005/00406
1
V inv0 2 V DiS VDiS
T
Fmob (1 3 V DiS )
+ Gmin k02 VDiS ,
VDiS < 0
Ich [VDiS , VDiSsat , Vinv0 , , Fmob ] = (4.19)
1
V V V
inv0 DiSeff DiSeff
2
T
F (1 + V DiSeff )
mob 3
+ Gmin k02 VDiS , VDiS 0
VGDit , VGDit 0
VGDit eff = p (4.21)
hypm VGDit , VDiBt + k0D VDiBt ; 8 , VGDit < 0
VGDit , VGDit 0
Vqdr [VGDit ] = Voxp +
s 2
k0D k0D (4.22)
k0D + VGDit , VGDit < 0
2 2
h i
Vqdr eff = hyp Vqdr [VGDit eff ] ; 2 (4.23)
2 Vqdr eff
VDDisat = q (4.24)
1+ 1 + 2 3DT Vqdr eff
dr 1
Vq eff 2 V DDieff VDDieff
acc
T
Fmobacc (1 + 3DT VDDieff )
2
+ Gmin k0D VDDi , VDDi 0
Idr [VDiS , VGSt , VDS1 , VSB , Fmobacc ] = (4.27)
dr 1
V V VDDi
DDi
q eff 2
acc T
Fmobacc (1 3DT VDDi )
2
+ Gmin k0D VDDi , VDDi < 0
30
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H0 = Ich [0, VDiSsat , Vinv0 , , Fmob ] Idr [0, VGSt , VDS1 , VSB , Fmobacc ]
H1 = Ich [VDS1 , VDiSsat , Vinv0 , , Fmob ] Idr [VDS1 , VGSt , VDS1 , VSB , Fmobacc ]
if H0 = 0 then VDiS = 0
if H1 = 0 then VDiS = VDS1
if H0 < 0 then {VDiSL = 0; VDiSH = VDS1 }
else {VDiSL = VDS1 ; VDiSH = 0}
1
VDiS = (VDiS L + VDiS H )
2
H = Ich [VDiS , VDiSsat , Vinv0 , , Fmob ] Idr [VDiS , VGSt , VDS1 , VSB , Fmobacc ]
Ich Idr
H =
VDiS VDiS
VDiS0 = |VDiSH VDiSL |
VDiS = VDiS0
error = |VDiS |
for i = 0; i < 100 and error > 1 1012 ; i = i + 1
do begin
if { ((VDiS VDiS H ) H H) ((VDiS VDiS L ) H H) > 0
or |2 H| > |VDiS0 H|}
then (4.28)
{
VDiS0 = VDiS
1
VDiS = (VDiSH VDiSL )
2
VDiS = VDiSL + VDiS
}
else
{
VDiS0 = VDiS
H
VDiS =
H
VDiS = VDiS VDiS
}
error = |VDiS |
H = Ich [VDiS , VDiSsat , Vinv0 , , Fmob ] Idr [VDiS , VGSt , VDS1 , VSB , Fmobacc ]
Ich Idr
H =
VDiS VDiS
if H < 0 then VDiSL = VDiS
else VDiSH = VDiS
end
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2
VGBeff0
sat0 = q (4.31)
2
k0 /2 + VGBeff0 + (k0 /2 )
p !m
dibl
p VSB
Ddibl = dibl B T p t (4.32)
B T
p
Dsf = sf hyp [sat0 VSBt ; 3 ] (4.33)
VDS1 4
VDSeff = 3/2 (4.35)
Vlimit2 + VDS1 2
VG = D VDSeff (4.36)
Acc (VGBeff 1 )
acc = T exp 1 (4.39)
T
2
VGBeff + acc
sat [VGBeff , acc ; k] = q acc (4.40)
2
k/2 + VGBeff + acc + (k/2 )
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k0
= p (4.54)
2 V1 + hyp [s0 + acc ; 5 ]
=1+ (4.55)
Vinv0
VDiSsat0 = (4.56)
2 VDiSsat0
VDiSsat = p (4.57)
1 + 1 + 2 3T VDiSsat0
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Drain-source current:
VinvexL = Vinvex sL , acc , VDiBt,eff ; k0 , m0 (4.64)
s = sL s0 (4.65)
1
Vinv = Vinv0 2 s (4.66)
Fmobsat = 1 + 3T s (4.67)
q
VDS 1 VDiSeff + (VDS 1 VDiSeff )2 + VP2
GL = hyp 1 ln ; 5 (4.69)
VP
sat + T VSBt
x0 = 2 (4.70)
T
sat + T VDiBt,eff
xL = 2 (4.71)
T
exp[x0 ] + exp[xL ]
, x0 80 xL 80,
G= 1 + exp[x0 ] + exp[xL ] (4.72)
1, x0 > 80 xL > 80
Vinv s
Idrift = T G (4.73)
Gmob GL
Vinvex0 VinvexL
Idiff = T T (4.74)
Gmob GL
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Avalanche current:
a2ch a2ch
a1chT |IDS | exp
, |VDiS | a3ch VDiSsateff > ,
IAVLch = |VDiS | a3ch VDiSsateff A
0, a2ch
|VDiS | a3ch VDiSsateff
A
(4.76)
1
Vinvsat = hyp Vinv0 2 VDiSsateff ; 2 (4.79)
Vinvsat VDiSsateff
Isat = T G (4.80)
Gmobsat
accT RDT
facc = (4.82)
Fmobacc
flin
Voxpavl = (4.83)
facc
s
2 2 Vchsat
VDSsat = Voxpavl + VGSt hyp (Voxpavl + VGSt VDiSsateff ) ; 5 (4.84)
facc
a2dr a2dr
a1drT |IDS | exp
, |VDS1 | a3dr VDSsateff > ,
IAVLdr = |VDS1 | a3dr VDSsateff A
0, a2dr
|VDS1 | a3dr VDSsateff
A
(4.86)
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f3acc [VGBt , VGBeff ; Acc] = VGBt VGBeff f2acc [VGBt , VGBeff ; Acc] (4.90)
VGT
Fj = (4.98)
VGT + T
Fj
QGmos = Cox Vox + VGT (4.99)
12
( )!
Cox VGT Fj Fj2
QDmos = VGT 1 (4.100)
2 6 2 20
( )!
Cox VGT Fj Fj2
QSmos = VGT + 1+ (4.101)
2 6 2 20
Qch
G = QGmos (4.103)
Qch
D = FL QDmos (4.104)
Qch
S = QSmos + (1 FL ) QDmos (4.105)
Qch ch ch
B = QG + QD + QS
ch
(4.106)
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VDiGeff = hyp VGDit,eff ; 7 (4.109)
AccD (VDiGeff 7 )
accDi = T exp 1 (4.110)
T
VDiBt = hyp VSB + VDiSdr,eff + 0.9 BD T ; 2 + 0.1 BD T (4.112)
saccDi = sacc VGDit,eff , VDiGeff ; k0D , AccD (4.114)
dr
Vox Di = VGDit,eff + sDi + saccDi (4.115)
Vqaccdep
Di
dr
= Vox Di + VinvDi (4.118)
Vqdr
Di
= Voxp + Vqaccdep
Di
(4.119)
h i
Vqdr
Di eff
= V limit + hyp V dr
qDi V ;
limit 7 (4.120)
2 Vqdr
Di eff
VDDisat = q (4.121)
1+ 1 + 2 3D T Vqdr
Di eff
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Vqaccdep
D
dr
= Vox D + VinvD (4.134)
Vqdr
D
= Voxp + Vqaccdep
D
(4.135)
h i
Vqdr
D eff
= V limit + hyp V dr
qD V ;
limit 7 (4.136)
Vqaccdep = Vqaccdep
Di
Vqaccdep
D
(4.138)
Vqaccdep
Fjdr = (4.139)
Vqdr eff
( )!
CoxD Vqaccdep Fjdr Fj2dr
Qaccdep
D = Vqdr eff 1 (4.140)
2 6 2 20
( )!
CoxD Vqaccdep Fj Fj2
Qaccdep
S = Vqdr eff + 1 + dr dr (4.141)
2 6 2 20
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Inclusion of asymmetry:
q
VTt = VFBT + B T VFBDT + k0 VDiBt,eff (4.142)
VGDilim = VGDit,eff hyp VGDit,eff VTt ; 7 (4.143)
1
Vacc,lim = 2 VGDiacc,lim + VGDacc,lim (4.148)
Vacc,lim
Fjacc,lim = (4.149)
Vacc,lim + Voxp
Fj2acc,lim
( )!
CoxD Vacc,lim Fjacc,lim
QSacc,lim = Vacc,lim + 1+ (4.150)
2 6 2 20
accdep
Qdr
D = QD + FL Qaccdep
S + (1 FL ) QSacc,lim (4.151)
accdep
Qdr
S = (1 FL ) Q S Q Sacc,lim
(4.152)
CoxD
Qdr
B = (VinvD + VinvDi ) (4.153)
2
Qdr
G = Q dr
S + Q dr
D + Q dr
B (4.154)
Total charges:
QG = Qch dr
G + QG (4.155)
QD = Qch dr
D + QD (4.156)
QS = Qch dr
S + QS (4.157)
QB = (QG + QD + QS ) (4.158)
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May 2009 MOS Model 20, Level 2002.2 Unclassified Technical Note PR-TN-2005/00406
h i
Vqdr eff = hyp Vqdr [VGDit eff ] ; 2 (4.163)
2 Vqdr eff
VDDisat = q (4.164)
1+ 1 + 2 3DT Vqdr eff
dr
Fmobsat = 1 + 3DT VDDieff (4.166)
" #
Vqdr eff VGDit eff VDDieff
gmdr = max acc T dr
, 1 1010 (4.167)
VGDit eff VGDit Fmobacc Fmobsat
1
3DT (VDDieff )2
" #
Vqdr eff VDDieff 2
gdsdr = max acc T 2 , 1 1010 (4.168)
dr
Fmobacc Fmobsat
gdsdr + gmdr
gtransfer = (4.169)
gdsch + gdsdr + gmdr
Flicker noise:
ox
N0 = Vinvex0 (4.170)
q tox
ox
NL = VinvexL (4.171)
q tox
ox
N = T (4.172)
q tox
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q 2T tox T IDS
2
N0 + N
SDfl0 = Nf A N Nf B + N Nf C ln
ox N Gmob NL + N
Nf C 2 2
+ (Nf B N Nf C ) (N0 NL ) + N0 NL (4.173)
2
2 Nf A + Nf B NL + Nf C NL2
+ T IDS (1 GL )
(NL + N )2
2 max [SDfl0 , 0]
SDfl = gtransfer (4.174)
f
Thermal noise:
2 s 2
Fmobsat GL
SDth0 = T Vinv +
Fmob 12 Vinv + T
(4.175)
3T Vinv s 3T s
2
Fmob Fmobsat GL
2
SDth = gtransfer NTT max [SDth0 , 0] (4.176)
(2 Cox )2 2
SGth = NTT f (4.177)
3 gmch
p
SGDth = 0.4 j SGth SDth (4.178)
4.5 Self-Heating
Self-heating is part of the model. It is defined in the usual way by adding a self-heating network
(see Figure 6) containing a current source describing the dissipated power and both a thermal
resistance RTH and a thermal capacitance CTH . The resistor and capacitor are both connected
between ground and the temperature node dT. The value of the voltage VdT at the temperature node
gives the increase in local temperature, which is included in the calculation of the temperature-
scaling relations; see Eqns. (3.2) and (3.34). For the value of ATH , we recommend using values
from literature that describe the temperature scaling of the thermal conductivity. For the most
important materials, the values are given in Figure 6, which is largely based on Ref. [8]; see also
[1]. For example, if the value of VdT is 0.5 V, the increase in temperature is 0.5 degrees Celsius.
The total dissipated power is a sum of the dissipated power of each branch of the equivalent circuit,
and is given by:
e e
Pdiss = ID VD + ISe VSe + IBe VBe (4.179)
= IDS VDS + IDB (VDS VSB ) + ISB VSB (4.180)
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Figure 6: On the left, the self-heating network, where the node voltage VdT is used in the
temperature-scaling relations. Note that for increased flexibility, the node dT is available to the
user. On the right are parameter values that can be used for ATH .
where all variables are given in Figure 5 in section 2.3. Note that only the steady-state currents
contribute to the dissipated power. The total dissipation applies for the electrical model (mnet1 ,
mpet1 , mos2002et2 ) and geometrical model (mnt1 , mpt1 , mos2002t2 ).
4.5.3 Usage
Example:
circuit;
e_ddl (1, 0) 20;
e_gl (2, 0) 2;
e_ssl (3, 0) 0;
e_bbl (4, 0) 0;
mnet_1(1, 2, 3, 4, dT) level=2002, rth=300, cth=3e-9;
r_2 (dT, 0) 1e6;
end;
dc;
print: vn(dT), pdiss.mnet_1;
end;
run;
1
Pstar model name
2
Spectre/ADS model name
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Result:
DC Analysis.
Ground node is set to node 0.
VN(DT) = 1.066E+00
Pdiss.MNET_1 = 3.556E-03
The voltage on node dT is 1.066E+00 V, which means that the local temperature is increased by
1.066 C.
c NXP Semiconductors 2009 43
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The parameter extraction strategy for MOS Model 20 excluding the effect of self-heating is ana-
loguous to the four different steps described in Ref. [4]. However, in case of a non-negligible
temperature rise due to self-heating, one cannot divide the parameter extraction procedure into a
separate parameter extraction of miniset parameters at room temperature and a separate parameter
extraction of the temperature scaling parameters. The reason is that once self-heating has been
incorporated, the miniset parameters are internally corrected for this temperature rise due to self-
heating, and can therefore not be determined from measurements performed at only one single
temperature. Hence, to extract parameters for a device including self-heating, the following three
steps are performed:
1. measurements
2. extraction of miniset parameters (including temperature scaling parameters)
3. extraction of width scaling parameters
Notice that, in contrast to a conventional MOS transistor, usually the LDMOS transistor has only
one gate length L available in a process. Therefore, the division of this length into a length Lch
of the channel region and a length Ldr of the drift region is difficult. Further insight into this
division can be obtained if one has various LDMOS transistors of different drift-region lengths
Ldr available.
The above three steps of the parameter extraction strategy will be briefly described in the following
sections.
5.1 Measurements
The parameter extraction routine consists of four different DC measurements and one capacitance
measurement1 :
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Measurement VI (Cvg): Cgg , Csg , Cdg , and Cbg versus VGS characteristics:
n/p-channel : VGS = VGS, max , . . ., VGS, max
VDS = 0 V
VSB = 0 V
The values of transconductance gm and output conductance gDS are determined from the I-V
curves by numerically calculating the derivative of ID with respect to VGS and VDS , respectively.
In measurements II and III, use is made of the threshold voltage VT , which has to be determined
for all of the source-bulk bias values VSB used in measurement I (idvg). The way VT is determined
is rather arbitrary: it can be either obtained by the use of a linear extrapolation method or by a
constant-current criterion.
For the miniset extraction, measurements I through V have to be performed for a certain device
width at various temperatures, ranging from about Tmin = 40 C to Tmax = 125 C. Finally,
to determine the width scaling parameters, the measurements at room temperature need to be
performed for a narrow and broad transistor.
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In case of a non-negligible temperature rise due to self-heating, the extraction of miniset param-
eters is performed by the use of an external thermal network. This thermal network provides the
temperature rise Tselfheating due to self-heating. The reference temperature Tref is chosen equal
to the chuck temperature Tchuck , while the temperature rise T is set equal to the temperature rise
Tselfheating due to self-heating, according to
Here, Rth denotes the thermal resistance (in kelvins per watt), and has to be determined before
one starts the extraction of miniset parameters. In case of a one-dimensional heat flow, the thermal
resistance is given by
tBOX tSi 1 tSi 1
RthSOI = + , or Rthbulk = , (5.2)
kox kSi A kSi A
for an SOI process and a bulk process, respectively. Here, tSi represents the thickness of the
silicon wafer, tBOX the thickness of the buried oxide (BOX) layer, and A denotes the area over
which dissipation takes place; see Figure 7. The physical constants kSi and kox are the thermal
conductivity of silicon and oxide, respectively. At T = 27 C, these conductivities are given
by kox = 1.4 W/(Km) and kSi = 1.41 102 W/(Km). Thus, in general Rth depends on the
device temperature as well as device geometry. More details on how to incorporate the effect of
self-heating into the parameter extraction strategy can be found in e.g. Ref. [7].
A A
SOI
k Si
k Si
t BOX BOX
k ox t Si
k Si Sisubstrate
t Si
Sisubstrate
Figure 7: Geometry for the one-dimensional heat flow in a transistor in an SOI process (left) and
a bulk process (right).
Next, a first estimate of the miniset parameters is given for a certain device width W , based on an
estimate for the oxide thickness tox , the channel length Lch , and drift-region length Ldr , according
to the following table:
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Table 1: Starting miniset parameter values for parameter extraction of a typical DMOS transistor
with channel length Lch (m), drift-region length Ldr (m), device width W (m), and oxide thickness
tox (m).
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Parameters COX, COXD, CGSO, and CGDO are only important for the charge model, and do not
affect the DC model; they have to be extracted from C-V characteristics. Furthermore, in practice
the parameters PHIBD, STPHIBD, KOD, VFBD, and STVFBD cannot be determined accurately
from DC measurements, and as a consequence they are determined from C-V measurements.
In general, the simultaneous determination of all miniset parameters is not advisable, because the
value of some parameters can be wrong due to correlation and suboptimization. Therefore, it is
more practical to split the parameters into several groups, where each parameter group can be
determined using specific measurements.
Next, the parameter extraction strategy is described, for both DC and AC measurements.
DC parameters: The extraction strategy for the DC parameters for an n-channel DMOS tran-
sistor is outlined in Table 2. For p-channel DMOS transistors, all voltages and currents have to
be multiplied by 1. The optimisation is either performed on the absolute (abs) or relative (rel)
deviation between the model and measurements.
Table 2: DC-parameter extraction strategy for an n-channel DMOS transistor, including self-
heating.
AC parameters: The extraction strategy for the AC parameters for an n-channel DMOS tran-
sistor is outlined in Table 3. For p-channel DMOS transistors, all voltages and currents have to
be multiplied by 1. The optimisation is either performed on the absolute (abs) or relative (rel)
deviation between the model and measurements.
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Table 3: AC-parameter extraction strategy for an n-channel DMOS transistor, including self-
heating.
Since in most high-voltage processes the LDMOS transistor has only one gate length L, there is
no length scaling scheme present in MOS Model 20. Thus, geometry scaling consists of only
width scaling, and can be separated into a width scaling scheme for the channel region and a width
scaling scheme for the drift region. The most important part of the geometry scaling scheme is
the determination of W and WD , since it affects the DC, the AC, and the noise model; see
Section 3.2.3. Here, W and WD can be determined from the extrapolated zero-crossing in the
gain factors and acc (or 1/RD ), respectively, versus mask width W . As an LDMOS transistor
may have different mask widths for the source and the drain, different values of W and WD
can also be obtained.
When using the physical scaling relations of Section 3.2.3, it is possible to calculate a parameter
set for a process, given the parameter set of typical transistors of this process. To accomplish this,
transistors of different widths have to be measured. Using these measurements, the sensitivities of
the parameters to the width can be found. For the determination of a geometry-scaled parameter
set, a three-step procedure is recommended:
1. determine minisets (B , k0 , , . . .) including temperature scaling for all measured devices,
as explained in Section 5.2.
2. the width sensitivity coefficients are optimised by fitting the appropriate geometry scaling
rules to these miniset parameters.
3. finally, the width and length sensitivity coefficients are optimised by fitting the result of the
scaling rules and current equations to the measured currents of all devices simultaneously.
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6 Pstar-Specific Items
6.1 Syntax
where:
i : occurrence indicator
<parameters> : list of model parameters
D, G, S, and B are the drain, gate, source, and bulk terminals respectively. For the model including
self-heating, the extra terminal dT is required (see Section 4.5).
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The DC operating point output facility gives information on the state of a device at its operation
point. Besides terminal currents and voltages, the magnitudes of linearized internal elements are
given. In some cases, meaningful quantities can be derived, which are then also given (e.g. fT ).
The objective of the DC operating point facility is twofold:
Open a window on the internal bias conditions of the device and its basic capabilities.
The printed items are described below. Here, Cxy indicates the derivative of the charge Q at
terminal x to the voltage at terminal y, when all other terminals remain constant.
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References
[1] http://www.nxp.com/models/
[3] R. van Langevelde and F.M. Klaassen, An Explicit Surface-Potential Based MOSFET
Model for Circuit Simulation, J. Solid-State Electronics, Vol. 44, pp. 409418, 2000.
[4] R. van Langevelde, A.J. Scholten, and D.B.M. Klaassen, MOS Model 11, level
1101, Philips Research Unclassified Report, NL-UR 2002/802, December 2002 (see
http://www.nxp.com/models/).
[5] A.C.T. Aarts and R. van Langevelde, A Robust and Physically Based Compact SOI-
LDMOS Model, Proc. ESSDERC, pp. 455458, 2002.
[6] D.E. Ward and R.W. Dutton, A Charge-Oriented Model for MOS Transistor Capaci-
tances, J. Solid-State Electronics, Vol. 13, No. 5, pp. 703708, 1978.
[7] A.C.T. Aarts, M.J. Swanenberg, and W.J. Kloosterman, Modelling of High-Voltage
SOI-LDMOS Transistors including Self-Heating, Proc. SISPAD, Springer, pp. 246249,
2001.
c NXP Semiconductors 2009 53
May 2009 MOS Model 20, Level 2002.2 Unclassified Technical Note PR-TN-2005/00406
54
c NXP Semiconductors 2009
Unclassified Technical Note PR-TN-2005/00406 MOS Model 20, Level 2002.2 May 2009
A Auxiliary Functions
1 p
hyp [x; ] = x + x 2 + 4 2 (A.1)
2
xy
hypm [x, y; m] = (A.2)
(x2m + y2m )1/(2m)
c NXP Semiconductors 2009 55