SiC Power Module

BSM300D12P2E001 Data Sheet

lApplication lCircuit diagram

Motor drive
1
Inverter, Converter 7

Photovoltaics, wind power generation.

9
8
Induction heating equipment. 3,4

6
5
lFeatures 2
10
1) Low surge, low switching loss. NTC
11

2) High-speed switching possible.

3) Reduced temperature dependence.

lConstruction
This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

lDimensions & Pin layout (Unit : mm)

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BSM300D12P2E001 Data Sheet

lAbsolute maximum ratings (Tj = 25C)

Parameter Symbol Conditions Limit Unit
Drain-source voltage VDSS G-S short 1200
Gate-source voltage(+) 22
VGSS D-S short V
Gate-source voltage(-) -6
G - S Voltage (tsurge<300nsec) VGSS_surge D-S short -10 to 26
ID DC (Tc=60C) 300
Drain current *1
IDRM Pulse (Tc=60C) 1ms*2 600
A
IS DC (Tc=60C ) 300
Source current *1
ISRM Pulse (Tc=60C) 1ms*2 600
Total power disspation *3 Ptot Tc=25C 1875 W
Max Junction Temperature Tjmax 175
Operating junction temperature Tjop -40 to150 C
Storage temperature Tstg -40 to125
Terminals to baseplate,
Isolation voltage Visol 2500 Vrms
f=60Hz AC 1min.
Main Terminals : M6 screw 4.5
Mounting torque - Nm
Mounting to heat shink : M5 screw 3.5
(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max.
(*3) Tj is less than 175C

Example of acceptable VGS waveform

+26V

tsurge
+22V

0V

tsurge
-6V

-10V

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2015 ROHM Co., Ltd. All rights reserved. 2/9 2015.07 - Rev.A
BSM300D12P2E001 Data Sheet

lElectrical characteristics (Tj=25C)

Parameter Symbol Conditions Min. Typ. Max. Unit
Tj=25C 2.2 2.9
Static drain-source on-state
VDS(on) ID=300A, VGS=18V Tj=125C 3.0 V
voltage
Tj=150C 3.4 4.5
Drain cutoff current IDSS VDS=1200V, VGS=0V - 3.2 mA
Tj=25C 1.6 2.1
VGS=0V, IS=300A Tj=125C 2.2 -
Tj=150C 2.4 3.2
Source-drain voltage VSD V
Tj=25C 1.4
VGS=18V, IS=300A Tj=125C 1.6 -
Tj=150C 1.7
Gate-source threshold voltage VGS(th) VDS=10V, ID=68mA 1.6 2.7 4.0 V
VGS=22V, VDS=0V 0.5
Gate-source leakage current IGSS mA
VGS= -6V, VDS=0V -0.5
td(on) VGS(on)=18V, VGS(off)=0V 80
tr VDS=600V 70
Switching characteristics trr ID=300A 50 ns
td(off) RG=0.2W 250
tf inductive load 65
Input capacitance Ciss VDS=10V, VGS=0V,100kHz 35 nF
Gate Registance RGint Tj=25C - 1.6 - W
NTC Rated Resistance R25 5.0 kW
NTC B Value B50/25 3370 K
Stray Inductance Ls 13 - nH
Terminal to heat sink 14.5 - mm
Creepage Distance -
Terminal to terminal 15.0 - mm
Terminal to heat sink 12.0 - mm
Clearance Distance -
Terminal to terminal 9.0 - mm
Junction-to-case thermal DMOS (1/2 module) *4 0.08
Rth(j-c)
resistance SBD (1/2 module) * 4
0.11
K/W
Case-to-heat sink Case to heat sink, per 1 module,
Rth(c-f) - 0.035 -
Thermal resistance Thermal grease appied *5
(*4) Measurement of Tc is to be done at the point just beneath the chip.
(*5) Typical value is measured by using thermally conductive grease of =0.9W/(mK).
Eon=IdVds Eoff=IdVds

lWaveform for switching test

trr

Vsurge
VDS
90% 90%

10% 10% 10%

2% 2% 2% 2%
ID

90%
10%
VGS

td(on) tr td(off) tf

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2015 ROHM Co., Ltd. All rights reserved. 3/9 2015.07 - Rev.A
BSM300D12P2E001 Data Sheet

lElectrical characteristic curves (Typical)

Fig.1 Typical Output Characteristics [ Tj=25C ] Fig.2 Drain-Source Voltage vs. Drain Current

600 8
VGS=18V
VGS=18V 7
VGS=16V
500

Drain-Source Voltage : VDS [V]

VGS=20V
6
400
Drain Current : ID [A]

VGS=14V 5 Tj=150C

300 4 Tj=125C

VGS=12V 3
200 Tj=25C
2
100 VGS=10V 1
0 0
0 2 4 6 8 0 200 400 600

Drain-Source Voltage : VDS [V] Drain Current : ID [A]

Fig.3 Drain-Source Voltage vs. Fig.4 Static Drain - Source On-State Resistance
Gate-Source Voltage [ Tj=25C ] vs. Junction Temperature
8 30
Static Drain - Source On-State Resistance

Tj=25C ID=300A
7
25
Drain-Source Voltage : VDS [V]

6
20
5
: RDS(on) [mW]

VGS=12V
4 15

3
ID=400A 10 VGS=14V
2 ID=300A VGS=16V

ID=200A 5 VGS=18V
1
ID=150A VGS=20V
0 0
12 14 16 18 20 22 24 26 0 50 100 150 200 250

Gate-Source Voltage : VGS [V] Junction Temperature : Tj [C]

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2015 ROHM Co., Ltd. All rights reserved. 4/9 2015.07 - Rev.A
BSM300D12P2E001 Data Sheet

lElectrical characteristic curves (Typical)

Fig.5 Forward characteristic of Diode Fig.6 Forward characteristic of Diode

1000 600
Tj=150C Tj=150C
Tj=125C
Tj=25C 500 Tj=125C
Tj=150C

Source Current : Is [A]

Source Current : Is [A]

Tj=125C 400
Tj=150C

Tj=25C Tj=125C
100 300
Tj=25C

200

VGS=0V
100 Tj=25C
VGS=18V VGS=0V
VGS=18V
10 0
0 1 2 3 4 0 1 2 3 4

Source-Drain Voltage : VSD [V] Source-Drain Voltage : VSD [V]

Fig.7 Drain Current vs. Gate-Source Voltage Fig.8 Drain Current vs. Gate-Source Voltage

600 1000
VDS=20V VDS=20V
500 Tj=125C
Tj=150C
Drain Current : ID [A]
Drain Current : ID [A]

400 Tj=125C 100 Tj=150C

Tj=25C

300
Tj=25C
200 10

100

0 1
0 5 10 15 0 5 10 15

Gate-Source Voltage : VGS [V] Gate-Source Voltage : VGS [V]

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BSM300D12P2E001 Data Sheet

lElectrical characteristic curves (Typical)

Fig.9 Switching Characteristics [ Tj=25C ] Fig.10 Switching Characteristics [ Tj=150C ]

1000 1000

td(off)
td(off)

Switching Time : t [ns]

Switching Time : t [ns]

tr tr
tf
100 100

td(on) tf
td(on)

VDS=600V RG=0.2W VDS=600V RG=0.2W

VGS(on)=18V INDUCTIVE VGS(on)=18V INDUCTIVE
VGS(off)= 0V LOAD VGS(off)= 0V LOAD
10 10
0 200 400 600 0 200 400 600

Drain Current : ID [A] Drain Current : ID [A]

Fig.11 Switching Loss vs. Drain Current Fig.12 Switching Loss vs. Drain Current
[ Tj=25C ] [ Tj=150C ]
25 25
Eoff VDS=600V
VDS=600V Eoff
VGS(on)=18V
VGS(on)=18V
20 20 VGS(off)=0V
VGS(off)=0V
RG=0.2W
RG=0.2W
Switching Loss [mJ]

Switching Loss [mJ]

INDUCTIVE
INDUCTIVE
15 LOAD
15 LOAD Eon

Eon
10 10

5 5
Err
Err
0 0
0 200 400 600 0 200 400 600

Drain Current : ID [A] Drain Current : ID [A]

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BSM300D12P2E001 Data Sheet

lElectrical characteristic curves (Typical)

Fig.13 Recovery Characteristics vs. Fig.14 Recovery Characteristics vs.

Drain Current [ Tj=25C ] Drain Current [ Tj=150C ]
1000 1 1000 1

Irr

Recovery Current : Irr [A]

Recovery Time : trr [ns]

Recovery Time : trr [ns]

Switching Time : t [ns]

100 Irr 0.1 100 0.1

trr
trr

VDS=600V VDS=600V
10 0.01 10 0.01
VGS(on)=18V VGS(on)=18V
VGS(off)=0V VGS(off)=0V
RG=0.2W RG=0.2W
INDUCTIVE INDUCTIVE
LOAD LOAD
1 0.001 1 0.001
0 200 400 600 0 200 400 600

Drain Current : ID [A] Drain Current : ID [A]

Fig.15 Switching Characteristics vs. Gate Fig.16 Switching Characteristics vs. Gate
Resistance [ Tj=25C ] Resistance [ Tj=150C ]
10000 10000
VDS=600V VDS=600V
ID=300A ID=300A td(off)
td(off)
VGS(on)=18V VGS(on)=18V
Recovery Current : Irr [A]

VGS(off)=0V VGS(off)=0V
Switching Time : t [ns]

1000 INDUCTIVE 1000 INDUCTIVE

LOAD LOAD tf
tf
tr
tr

td(on) td(on)
100 100

10 10
0.1 1 10 100 0.1 1 10 100

Gate Resistance : RG [W] Gate Resistance : RG [W]

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BSM300D12P2E001 Data Sheet

lElectrical characteristic curves (Typical)

Fig.17 Switching Loss vs. Gate Resistance Fig.18 Switching Loss vs. Gate Resistance
[ Tj=25C ] [ Tj=150C ]
60 60
VDS=600V Eon VDS=600V
ID=300A ID=300A
50 VGS(on)=18V Eoff 50
VGS(on)=18V
VGS(off)=0V VGS(off)=0V

Switching Loss [mJ]

INDUCTIVE
Switching Loss [mJ]

40 40 INDUCTIVE
LOAD LOAD

30 30

Eoff
20 20
Eon
10 10

Err Err
0 0
0.1 1 10 100 0.1 1 10 100

Gate Resistance : RG [W] Gate Resistance : RG [W]

Fig.19 Typical Capacitance vs. Drain-Source Fig.20 Gate Charge Characteristics

Voltage [ Tj=25C ]
1.E-07 25
Gate-Source Voltage : VGS [V]

20
Ciss
1.E-08
Capasitance : C [F]

15

Coss 10
1.E-09

5
Tj=25C ID=300A
VGS=0V Crss Tj=25C
1.E-10 0
0.01 0.1 1 10 100 1000 0 500 1000 1500 2000

Drain-Source Voltage : VDS [V] Total Gate charge : Qg [nC]

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BSM300D12P2E001 Data Sheet

lElectrical characteristic curves (Typical)

Fig.21 Normalized Transient Thermal

Impedance
1
Normalized Transient Thermal Impedance : Rth

0.1

Single Pulse
TC=25C
Per unit base
DMOS part : 0.08K/W
SBD part : 0.11K/W
0.01
0.001 0.01 0.1 1 10

Time [s]

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 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.

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R1102B