Lets consider the transmission gate in figure with one terminal connected to VDD=2.5V.

For what concerns the NMOS transistor, its operating region changes as Vout increases from 0V to
VDD-VTn=1.77V. The threshold is, in fact, affected by body effect and for Vout=1.77V it results:
VT = VT 0 + Vout + 0.6V 0.6V 0.73V .
For Vout larger than 1.77V the NMOS transistor is in cut-off region being the overdrive voltage VDD-
Vout-VTn smaller than 0V.
It can be easily verified that for Vout included in the range between about 1.2V and 1.77V, the
NMOS device works in pinch-off region.
In fact, for Vout=1.2V the threshold voltage is approximately equal to 0.66V and the overdrive
voltage is VDD-VTn-Vout=0.64V, which is very close to the saturation voltage VDSATn=0.63V. Increasing
further the output voltage, the overdrive voltage becomes smaller than VDSATn and consequently
the transistor works in pinch-off region.
Ultimately, we have:

0 Vout 1.2V velocity saturation region

1.2V Vout 1.77V pinch-off saturation region
Vout > 1.77V cut-off region

Thus, the resistance of the NMOS transistor is

VDD Vout
Rn for 0 Vout 1.2V
W V
knI VDSATn VDD Vout VTn DSATn
L n 2
VDD Vout
Rn for 1.2 Vout 1.77V
1 I W
kn (VDD Vout VTn )
2

2 L n

For what concerns the PMOS transistor it works in velocity saturation region for Vout<1.5V. For
Vout larger than 1.5V the PMOS transistor is in ohmic region. It cannot operate in pinch-off region,
its VGS being always equal to VDD.
Thus,
VDD Vout
Rp for 0 Vout 1.5V
W VDSATp
kpI VDSATp VDD VTp
L p 2
VDD Vout 1
Rp for 1.5 Vout 2.5V
W ( VDD Vout ) I W VDD Vout
kpI (VDD Vout ) VDD VTp k p
L p 2
+
2
VTp

L p 2
The PMOS transistor is not affected by body effect being its source always connected (in this
particular case) to VDD.

The equivalent resistance of the transmission gate is thus:

 Vdd Vout Vdd Vout
Re q Rn llRp = ll
In Ip

4
x 10
5
Rp
Rn
4.5
Rn//Rp

3.5
Equivalent resistance (ohm)

2.5

1.5

0.5

0
0 0.5 1 1.5 2 2.5
Vout (V)

For the opposite case (depicted in the following), try to evaluate the resistance adopting the same
procedure.

In this case, you can verify that for what concerns the NMOS transistor we get:

0V Vout 0.63V ohmic region

0.63V Vout 2.5V velocity saturation region
In this case the NMOS transistor is not affected by body-effect, its source being connected to 0V.

For what concerns the PMOS transistor:

Vout VTp = 0.7V cut-off region

0.7V Vout 1.6V pinch-off region
1.6V Vout 2.5V velocity saturation region

Remember that the threshold voltage of the PMOS transistor is affected by the body-effect, being:
VT = VT 0 + VDD Vout + 0.6V 0.6V .
For Vout=1.6V the threshold voltage is 0.58V, so the overdrive voltage is 1.02V, close to VDSATp=1V.
Thus, for Vout>1.6V the PMOS device enters the velocity saturation region.