Oppose that change Produce current opposite to the increasing

current
Electrons The conductivity of the material for magnetic
lines of force
0 eV Decrease by a factor of four
V/m J/Cm N/C 4 x 10-7 H/m
Induces potential 4.5 x 103 N/C
Atom Insulator
Electric lines of force Insulator
Ne = 2n2 The material has high resistance
Magnet Toroid
14.5 x 10 to the 18th coulombs Mass
Degaussing Coercivity
Magnetizing force 1,800 times
Atomic structure Ionization
Unit pole Hall effect
A vector quantity Ferrites
2,000 G Protons
6.050 Faradays second law
Directly proportional to the charge Diamagnetic
Joules Travels from north to south through the
surrounding medium of a bar magnet
A vector quantity Magnetomotive force
Conductance Magnetizing force
Conductance Attracts more
Lesser Reluctivity
Flux 0.00360/C
Current Coercive force
Hydrogen Hydrogen
Higher 2 N/Wb
Permeance Coulombs second law
High permeability 10-10 m
2A 10 Weber
Magnetic flux density Reverses the magnetic polarity
5 x 108, 5, 500 x 106 Weber Valence electrons
Absolute permittivity Neutrons
Ion 1-10
Coulombs first law Reluctance (resistance)
Loadstone (lodestone) Weber (magnetic flux SI system)
eV (energy) Tesla (magnetic flux density)
Coulomb (demonstrated) 14.4 N
More current can pass Neutrons
Gauss (magnetic flux density) 0 (zero)
Magnetomotive force (At) A force set up when current flows through a
conductor
Conductor (abundance) 6.25 x 1018 electrons/sec
An element (all atoms are the same) Insulator (widest gap)
At/Wb (unit of reluctance) Quantum (energy to move and electron)
0.4NI Free electrons (electrons at conduction band)
Leakage flux (flux that drifts away) Cation (positive) anion (negative)
Permanent magnet (high retentivity) Electrons (revolve)
Cryogenics (science of physical phenomena) Magnetic axis (straight line)
Permeability (ability to concentrate) Plasma (gases with charged particles)
Electrostatic force (force between two The current carrier in conductors are VALENCE
electrically charged body) ELECTRONS
Permeance (conductance) The rate at which conductor is moved
Non-crystalline or Amorphous Conductor (more free electrons)
8 x 10-19 A force set up when current flow through a
conductor (magnetic field)
Also doubles Ferromagnetic (very high permeabilities)
Soft magnetic materials (easily magnetized) A voltage that opposes the applied EMF
Force (inversely proportional) permeability One circular mil (area of conductor diameter
0.001 inch)
Typical saturation flux density 2 Wb/m2 1.260 gilberts (At)
Electric potential (measure of density) Isotope (is neutral)
Coulombs (Law bodies at rest) Valence band (containing valence electrons)
Magnetic pole (magnetic line of force is Along the surface (all RF current flow)
maximum)
Weigand effect (rapid switching) Exclusion principle (different set of quantum
numbers)
Electric flux density
Ionization potential (potential required to
remove a valence electron)
Near the wire (is stronger)
Faradays first law (whenever a conductor cuts
)
1 Gb/cm = (Oe)
Paramagnetic (slightly greater than)
Magnetic susceptibility (capacity of substance
to become magnetized)
Statcoulumb (esu)
Test charge (used to detect the presence of
electric charge)
Electric pole (equal magnitude opposite signs)
Amount of current (determines the strength)
Increases four times (distance if halved, force
is)
Flux in cgs (maxwell)
Coulombs law or law of electrostatics (directly
proportional and inversely proportional)
Left hand rule (direction of magnetic field
when current is flowing)
permeance-Permits flux
Potential energy (energy in electromagnetic or
electrostatic field)
Residual magnetism (reduced to zero)
Weber (108 maxwells)
1.1 x 10-10 um (diameter of hydrogen)
Permeability (conduct magnetic flux)
Electric flux density (vector)
Mutual inductance (a change current in one
will do the other)
Neutral (isolated body under normal
condition)
North pole (magnetic lines of force are
originating)
Residual magnetism (quantity of magnetism
retained)
Statcoulomb (cgs)
Electron (amber)
Ionizing (insulator can be conductor)
90 angle line of force leave and enter
0.93
Orange, blue, gold and silver (3.6 ohms
10%)
Reactive (has a phase difference)
Impedance (resistance and reactance)
14, 14, 14 (28 amu)
Series clipper (Clipper where diode is
connected in series)
Zinc Sulfide (Zns) highest energy gap
Tunnel diode (Esaki diode) negative resistance
diode
AIP (slowest electron-mobility)
Insulator (absolute temperature)
Forward bias (external voltage)
Reverse current (small value)
Ionization (avalanche breakdown primarily
dependent)
Trivalent (acceptor impurities)
14 eC (total charge of nucleus of silicon atom)
Donor-doped becomes (N-type semiconductor)
Magnetic flux (magnetic lines of force)
1 A, 400 Hz (most induced voltage)
Electric charge (unbalanced, the atom is said
to carry)
10-4 m
Permeability (H/m) permittivity (F/m)
Self-induced emf (emf induced in a coil)
Electric flux (scalar)
Diamagnetic material (slight less than)
Conductor (smallest energy gap) 0 eV
Electrically neutral (same positive and
negative)
Breakdown voltage (Lowest voltage)
Flux density in mks (Weber/m2)
Inductance (represent the energy stored)
Magnetic flux (the entire group of magnetic
field lines)
(electron current) Rate at which electrons pass
Gaussmeter measure (magnetic flux density)
1,836 electrons (equal to protons and
neutrons mass)
Permittivity (store electrical potential energy)
Nucleus (neutral)
Cobalt (ferromagnetic)
Electric field (space outside)
Magnetic flux (total number of magnetic lines)
Retentivity (which retain magnetism)
Keeper (used to maintain strength)
Gilbert (cgs of magnetomotive force)
8 (electrns to make stability)
Oppose the creation of magnetic flux
(reluctance)
Magnetic induction (substance becomes a
magnet when placed near a magnet)
Electromagnet can be switched On and OFF
2A
It allows independent operations of loads
1.55 A lagging
Rms (effective value, value that causes the
same heating effct as a dc-voltage)
Superposition (several voltage)
Gallium phosphide (green and red lights)
Diac (2 terminal, bidirectional), diode
unidirectional
Indium antimonide (InSb) smallest energy gap
Selenium (semiconductor used in xerography)
1.5 x 1010 (equilibrium concentration)
Inner-metallic (compound semiconductors)
Diac (three-layer diode)
Reverse recovery time (important to
considered)
Thyrector (two Zener diode)
Diode pack (containing more than one diode)
IMPATT (Read diode)
Acceptor level in a doped semiconductor (near
the valence level)
Forbidden band (separates valence and
conduction band)
Zener diode (utilize the avalanche or Zener
breakdown region, for voltage regulation)
Diode capacitance(the total capacitance)
Zener impedance (impedance operating in
Zener breakdown region)
Resistance operating a steady state voltage
(dc resistance)
(silicon) non metal
Shockley diode (four layer, characteristic at 1 st
quadrant = SCR )
Junction diode is forward biased a voltage
greater than threshold is applied, with the
cathode less positive than anode
Semiconductor used in requiring the emission
or absorption of lights (compound
semiconductor)
Combination of inductance, capacitance and
resistance (diode impedance)
Semiconductor diode that have a fine wire
called a cat-whisker (point contact diode)
(depends on quantum-mechanical bond)
Gunn diode
Inserted with an intrinsic material, the diode
becomes PiN diode
Capable of both amplification and oscillation
Tunnel diode
Diode is shunted with the load parallel
clipper
Chemical bond that is significant in metals
(metallic bonding)
Average resistance (large ac voltages)
Highest mobility (indium antimonide)
Zener effect (sudden large increase in current)
Very small current (as cut-off current)
N-type (cathode)
Capacitance when the diode is forward biased
diffusion capacitance or storage capacitance
Valence band (conduction of holes occur)
Backward diode high current flow takes
place when reverse-biased
Power handling capability if operated at higher
temperature decrease
Current capacity important specification of
semiconductor diode
Time required for forward voltage (forward
recovery time)
Compensated semiconductor doped with
both donor and acceptor
Germanium mostly used to detect infrared
Germanium metalloid or semimetal
Limiting the free carriers will decrease
conductivity increase resistance
Reflects the fact that holes and electrons
participate in the injection process (bipolar)
Area in JFET where current passes as it flows
from source to drain channel
10:1 or less
Base emitter is reversed and base-collector is
forward (cut-off)
Amorphous semiconuctor-(Semiconducting
glass)
Less than 1 watt - low power or small signal
Junction diode(n-type and p-type are brought
together)
Zener diode voltage regulator
(minimum voltage) threshold voltage
(effect when electric field across a
semiconductor is strong) avalanche
Depletion region-(area where there are no
charge carriers)
Elemental semiconductor (germanium)
Electrical resistance decrease as temperature
increase
Operating temperature of a reverses-biased
diode is increased, its leakage current or
reverse saturation current will (increase
exponentially)
Unidirectional conduction (diode action)
(semiconductor that is very rare) germanium
Threshold voltage when it operates at higher
temperature (decreases)
Electron and hole concentrations are equal
intrinsic semiconductor
Dynamic resistance (operating with small ac
signal)
Low leakage current (silicon over germanium)
Transition capacitance (effect of a capacitor)
32, 32, 40
Opposite in the direction of hole flow
electron flow in semiconductor
P-type (anode)
Maximum dissipation power (maximum power
can handle)
Highest mobility InSb
Semiconductor good for high temperature
(silicon carbide) SiC
Free from impurities intrinsic semiconductor
Pn junction (n-type and p-type)
Curve for voltage and current (characteristic
cuvre)
High-speed integrated circuit gallium
arsenide
Donor level near conduction band
Clamper shift the dc-level of the input signal
Voltage across the gate-source pinch off
voltage
Substrate of a MOSFET connected to (source)
Skews happen to JFET as current flows to it
Alloy transistor
Infinite collector-emitter resistance
150:1
Common-emitter forward-current amplification
factor
When transistor is saturated VCE is (0V)
FET voltage controlled current-source
Faulty device
Arrow emitter conventional current flow
Highest power gain common emitter
Maximum (saturation)
on transistor, voltage VBE 0.7
N-channel, gate should be positive
Transistor characteristic curves that is most
useful output characteristic curve
Communication link between the
manufacturer and user specification sheet
The region or area in a transistor that is
heavily doped at the junction
Most frequently used transistor common-
emitter
In MOSFET, foundation substrate
Half-wave rectifier series clipper
Transconductance of JFET dID/dVGS
Smallest construction base
Transistor input equivalent circuit - Resistor
and a voltage source
Circuit must have a capacitor clamper
Current in collector and emitter when base is
open cut-off
Dc beta
Gate consists of PN junction JFET
Lowest input resistance JFET
Gate-source voltage is zero drain-source
saturation current
Ac alpha a common-base, short-circuit,
amplification factor
Proper region of operation for ac amplification
dc biasing
NPN ebc, PNP cbe
Wide and short V-mosfet
JFET over BJT high input resistance
Transistor outer layers heavily doped
semiconductors
Tank is divided into input and feedback
portions colpitts oscillator
Approximate value of the bias-current
compensating resistor equal to the parallel
combination
Shunted with a small capacitance to
minimize high frequency noise
Ratio of differential and common gain
common-mode rejection ratio
Classify AM or FM class S
Noise gain using op-amps five inputs 6
Internally compensated op-amps
compensation capacitor
Eliminate Miller effect cascode amplifier
ICBO zero (0) mA
BJT current controlled current source
Diodes in two arms and resistors in other two
(half bridge)
Transistor terminal that handles most current
emitter
Diode chopper switching element
Usually specified by the manufacturers
(commn emitter)
Three terminal three layer transistor
More useful in integrated circuit IC chips
FETs
Base-emitter and base collector reversed cut
off region
Active region reversed forward
Insulated gate fieldistor, JFET
No channel between the drain and the source
enhancement type
Highest input resistance common collector
IC, ICO milliamperes and micro and nano
Substrate of p-channel IGFET enhancement
type n-type material
JFET length 1/L2
To increase MOSFET power, the channel
should be wide and short
Graph of the drain current ID current-voltage
characteristic curve
Degree of change, in operating-point due to
temperature variation in the dc biasing
stability factor
Base material and additional terminal
substrate
Inverting amplifier DTL
Region normally employed for linear amplifiers
active region
VGS = VP = zero
Region minimum distortion at output signal
active region
BJT FET input is reversed BJT forward FET
Usually neglected hr and ho
FET operates as BJT as switching MOSFET
enhancement type
Depletion pinch-off voltage
Full-wave doubler capacitors ay 2
Frequency at which the voltage gain of op-
amp reduces to unity unity-gain bandwidth
product
Non-linear class C
Used in cascade amplifier emitter and base
Q-point of Class D any of the above
Darlington superbeta!
Op-amp terminals 5
Nonlinear distortion harmonic distortion
Frequency dependent on charge and
discharge of RC networks relaxation
oscillator
Important in large signal dc-amplification
slew rate
3 amplifiers gain of 8 512
Two transistors differential amplifier
20 dB/decade roll-off reduction by a factor of
10 per decade
Distortion due to inability of an amplifier
amplitude distortion
10 90
Darlington configuration direct-coupled two-
stage transistor configuration
Change in input offset current due to
temperature change input offset current drift
Uses tapped coil in tuned circuit Hartley
Class A at the center
Highest gain open loop gain
By properly using and adjusting the offset-null
terminals
Class B cut off ang Q-point
Break frequency 0.707 times
Microwave oscillator klystron
Make the feedback and input resistances as
small as possible lesser noise
Better performance frequency response
Voltage gain decrease frequency increase
Large dc least effect drift
360 class A
Bias currents slight difference input offset
current
External frequency-compensating capacitor
3.0-30F
TO-99
Class A 25%
Q-point class A active region
Q-point class AB slightly above cutoff
Least distortion class A
Can be controlled externally programmable
op-amps
Slew rate and frequency response can affect
its performance
Input bias current helps us to determine
value of resistors
Amplifier at the output stage of op-amps
complementary amplifier
Can be used for linear amplification class A
or B
Input offset voltage is represented by
battery
Multistage transistor amplifier cascaded
amplifier
Used both npn feedback pair
More than 180 but less than 360 class AB
Overall gain of amplifier in cascade the
product
A good op-amp - has very high input
resistance
Class C efficiency - 33%
Push-pull amplifier that uses npn and pnp
transistors complementary-symmetry
amplifier
External frequency-compensation capacitor
lower value, wider bandwidth
Feedback element of integrator capacitor
Eccles/Jordan circuit - bistable multivibrator
By making the feedback resistance small
minimize the effect of the input
Feedback element resistor
Generating a reference voltage above ground
single polarity power supply
Distinguishing feature of class C amplifier
less than 180 degrees
Current at the input of op-amp input bias
current
Common collector very low output
resistance
Most efficient class A (transformer-coupled)
Q point below cutoff region
Causes the output to saturate towards
positive or negative
180 degrees class B
By installing a bias-current-compensating
resistor
Reduction of op-amps gain roll-off
Gain in comparator open-loop gain
Class B 180 degrees 78.55 efficiency
Noise gain of op-amps 1+Rf/Ri
Class D 90% efficiency
Circuit input stage of op-amp differential
amplifier
Produce alternating or pulsating current or
voltage oscillator
Packaging - SMT
Op-amp zero-crossing detector withoyt
hysteresis has no feedback
Two comparators using op-amps window
comparator
Less than 180 degrees class C
Single-ended input
Q-point class B cutoff region
Maximum output voltage rate of change of an
op-amp slew rate
DIL TO-116
+VSAT to VSAT (maximum output voltage
swing)
Follows the differential amplifier high gain
amplifier
Class BC biased to class C but modulated
reversed to class C
Voltage gain of voltage follower unity
Gain in common mode common gain
6dB/octave reduction of op-amps voltage
gain
Like darlington feedback pair
Ration of output to input quantity gain
Battery between the non-inverting and
ground terminal
Output complementary stage of most op-
amps common collector
Two-stage transistor amplifier cascode
configuration
Class D highest efficiency
Intended for pulse operation class D
Threshold voltage between the base-emitter
junction of silicon darlington transistor 1.6 V
Free-running astable
Has an output current flowing during the
 whole input current cycle class A
Stage followed by the output complementray
in p-amps level shifter