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HFA30PB120
Ultrafast, Soft Recovery Diode
HEXFRED
TM
VR = 1200V
Features VF(typ.)* = 2.3V
Ultrafast Recovery IF(AV) = 30A
Ultrasoft Recovery
Qrr (typ.)= 120nC
Very Low IRRM
Very Low Qrr IRRM(typ.) = 4.7A
Guaranteed Avalanche trr(typ.) = 47ns
Specified at Operating Conditions di(rec)M/dt (typ.)* = 240A/s
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and
Switching Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count TO-247AC (Modified)
Description
International Rectifier's HFA16PB120 is a state of the art center tap ultra fast recovery diode. Employing
the latest in epitaxial construction and advanced processing techniques it features a superb combination
of characteristics which result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well
suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time,
the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and
the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Notes:
L=100H, duty cycle limited by max T J
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
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HFA30PB120
10
1000
T J = 125C
1
T J = 25C
IF, Instantaneous Forward Current (A)
100
0.1
200 400 600 800 1000 1200
25C
125C
150C
100 TJ = 25C
1
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VF, Forward Voltage Drop (V)
10
1 10 100 1000
Fig. 1 - Maximum Forward Voltage Drop vs.
Reverse Voltage - V R (V)
Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
R1 R2 R3
R1 R2 R3 Ri (C/W) i (sec)
0.10 J
0.05 J
C
0.234 0.000100
1 2 3
0.02 1 2 3 0.069 0.000434
0.01 0.01
Ci= i/Ri 0.056 0.002202
SINGLE PULSE Ci i/Ri
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
IRRM (A)
trr (ns)
150
125 15
100
10
75
50
5
25
0 0
100 150 200 250 300 350 400 450 500 100 150 200 250 300 350 400 450 500
diF /dt (A/s) diF/dt (A/s)
Fig. 5 - Typical Reverse Recovery vs. dif/dt, Fig. 6 - Typical Recovery Current vs. dif/dt,
(per Leg) (per Leg)
3000 900
VR = 390V V = 390V
IF = 60A R
T J = 25C _____ T = 25C _____
800 J
T J = 125C ---------- IF = 30A TJ = 125C ----------
2500 IF = 15A
700
IF15A
2000 600
di(rec)M / dt (A/s)
500
Qrr (nC)
1500
400
IF = 30A
1000 300
200 IF = 60A
500
100
0 0
100 200 300 400 500 100 150 200 250 300 350 400 450 500
Fig. 7 - Typical Stored Charge vs. dif/dt, Fig. 8 - Typical di(rec)M/dt vs. dif/dt,
(per Leg) (per Leg)
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HFA30PB120
t rr
IF
ta tb
0
REVERSE RECOVERY CIRCUIT
4
Q rr
VR = 200V 2
I RRM 0.5 I RRM
di(rec)M/dt 5
0.01
0.75 I RRM
L = 70H
D.U.T.
1 di f /dt
1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
D and I RRM
dif/dt through zero crossing
ADJUST trr X IRRM
G IRFP250
2. I RRM - Peak reverse recovery current Q rr =
2
S 3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during t b portion of trr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Fig. 10 - Reverse Recovery Waveform and
Circuit Definitions
L = 100H I L(PK)
HIGH-SPEED
SWITCH
DUT
FREE-WHEEL
Rg = 25 ohm
DIODE +
CURRENT DECAY
Vd = 50V TIME
MONITOR
V (AVAL)
V R(RATED)
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HFA30PB120
TO-247AC (Modified) Package Outline Drawing
Dimensions are in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
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