TIPL760, TIPL760A

NPN SILICON POWER TRANSISTORS

Copyright 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997

Rugged Triple-Diffused Planar Construction

TO-220 PACKAGE
4 A Continuous Collector Current (TOP VIEW)
Operating Characteristics Fully Guaranteed
at 100C B 1

1000 Volt Blocking Capability C 2

75 W at 25C Case Temperature E 3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT
TIPL760 850
Collector-base voltage (IE = 0) VCBO V
TIPL760A 1000
TIPL760 850
Collector-emitter voltage (V BE = 0) VCES V
TIPL760A 1000
TIPL760 400
Collector-emitter voltage (IB = 0) VCEO V
TIPL760A 450
Emitter-base voltage V EBO 10 V
Continuous collector current IC 4 A
Peak collector current (see Note 1) ICM 8 A
Continuous device dissipation at (or below) 25C case temperature Ptot 75 W
Operating junction temperature range Tj -65 to +150 C
Storage temperature range Tstg -65 to +150 C

NOTE 1: This value applies for tp 10 ms, duty cycle 2%.

PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter TIPL760 400
V CEO(sus) IC = 10 mA L = 25 mH (see Note 2) V
sustaining voltage TIPL760A 450
VCE = 850 V VBE = 0 TIPL760 50
Collector-emitter V CE = 1000 V VBE = 0 TIPL760A 50
ICES A
cut-off current V CE = 850 V VBE = 0 TC = 100C TIPL760 200
V CE = 1000 V VBE = 0 TC = 100C TIPL760A 200
Collector cut-off VCE = 400 V IB = 0 TIPL760 50
ICEO A
current V CE = 450 V IB = 0 TIPL760A 50
Emitter cut-off
IEBO VEB = 10 V IC = 0 1 mA
current
Forward current
hFE VCE = 5V IC = 0.5 A (see Notes 3 and 4) 20 60
transfer ratio
IB = 0.5 A IC = 2.5 A 1.0
Collector-emitter
VCE(sat) IB = 0.8 A IC = 4A (see Notes 3 and 4) 2.5 V
saturation voltage
IB = 0.8 A IC = 4A TC = 100C 5.0
IB = 0.5 A IC = 2.5 A 1.2
Base-emitter
V BE(sat) IB = 0.8 A IC = 4A (see Notes 3 and 4) 1.4 V
saturation voltage
IB = 0.8 A IC = 4A TC = 100C 1.3
Current gain
ft VCE = 10 V IC = 0.5 A f= 1 MHz 12 MHz
bandwidth product
Cob Output capacitance VCB = 20 V IE = 0 f = 0.1 MHz 110 pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RJC Junction to case thermal resistance 1.56 C/W

inductive-load-switching characteristics at 25C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tsv Voltage storage time 2.5 s
trv Voltage rise time 300 ns
IC = 4 A
tfi Current fall time IB(on) = 0.8 A (see Figures 1 and 2) 250 ns
V BE(off) = -5 V
tti Current tail time 150 ns
txo Cross over time 400 ns
tsv Voltage storage time 3 s
trv Voltage rise time 500 ns
IC = 4 A IB(on) = 0.8 A
tfi Current fall time (see Figures 1 and 2) 250 ns
V BE(off) = -5 V TC = 100C
tti Current tail time 150 ns
txo Cross over time 750 ns

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT INFORMATION

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 TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

33
+5V

D45H11
BY205-400

BY205-400
33 RB
(on)
1 pF
180 H
vcc
V Gen 2N2222
1 k
68 0.02 F TUT
BY205-400
1 k Vclamp = 400 V

+5V

5X BY205-400
270 BY205-400 1 k

2N2904
Adjust pw to obtain IC
D44H11
47
For IC < 6 A VCC = 50 V
V
For IC 6 A VCC = 100 V BE(off)
100

Figure 1. Inductive-Load Switching Test Circuit

I B(on)
A (90%)
A - B = tsv IB Base Current
B - C = trv
D - E = tfi
E - F = tti
C 90%
B - E = txo

B 10%
V Collector Voltage
CE

D (90%)

E (10%)
I Collector Current
C(on)
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 , Cin < 11.5 pF.
B. Resistors must be noninductive types.

Figure 2. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

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TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE

vs vs
COLLECTOR CURRENT BASE CURRENT
TCP741AA TCP741AB
100 50

VCE(sat) - Collector-Emitter Saturation Voltage - V

TC = 125C
TC = 25C
TC = 25C
TC = 100C
TC = -65C
40
hFE - Typical DC Current Gain

VCE = 5 V IC = 4 A
IC = 3 A
IC = 2 A
30 IC = 1 A

10

20

10

10 0
01 10 10 0 05 10 15 20
IC - Collector Current - A IB - Base Current - A

Figure 3. Figure 4.

BASE-EMITTER SATURATION VOLTAGE COLLECTOR CUT-OFF CURRENT

vs vs
BASE CURRENT CASE TEMPERATURE
TCP741AC TCP741AP
125 10
TC = 25C
VBE(sat) - Base-Emitter Saturation Voltage - V

ICES - Collector Cut-off Current - A

115
10

TIPL760A
105
VCE = 1000 V
01

095
TIPL760
VCE = 850 V
IC = 4 A 001
085 IC = 3 A
IC = 2 A
IC = 1 A
075 0001
0 02 04 06 08 10 12 14 16 -60 -30 0 30 60 90 120
IB - Base Current - A TC - Case Temperature - C

Figure 5. Figure 6.

PRODUCT INFORMATION

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 TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAP741AE
10
IC - Collector Current - A

10

0.1
tp = 10 s
tp = 100 s
tp = 1 ms
tp = 10 ms TIPL760
DC Operation TIPL760A
001
10 10 100 1000
VCE - Collector-Emitter Voltage - V

Figure 7.

THERMAL INFORMATION

THERMAL RESPONSE JUNCTION TO CASE

vs
POWER PULSE DURATION
TCP741AM
Z JC/R JC - Normalised Transient Thermal Impedance

10

50%

20%

10%
01
5%

0%
t1
duty cycle = t1/t2 t2
Read time at end of t1,

TJ(max) - TC = P D(peak) ( )
ZJC
R JC
RJC(max)

001
10-5 10-4 10 -3 10 -2 10-1 10 0
t1 - Power Pulse Duration - s

Figure 8.

PRODUCT INFORMATION

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TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20

3,96 10,4 1,32

3,71 10,0 2,95 1,23
2,54
see Note B

6,6
6,0

15,90
14,55

see Note C
6,1
3,5

14,1
1,70 12,7
0,97 1,07
0,61
1 2 3

2,74 0,64
2,34 0,41

5,28 2,90
4,88 2,40

VERSION 1 VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTES: A. The centre pin is in electrical contact with the mounting tab. MDXXBE
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.

PRODUCT INFORMATION

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 TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 1997, Power Innovations Limited

PRODUCT INFORMATION

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